nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A bipolar control storage memory-design-considerations and test problems
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
2 |
Aceelerated testing of air-to-air guided minsiles
|
|
|
1973 |
12 |
5 |
p. 409- 1 p. |
artikel |
3 |
A consistent shape parameter estimator for the Weibull distribution
|
|
|
1973 |
12 |
5 |
p. 405-406 2 p. |
artikel |
4 |
Advances in resistor fabrication yield monolithic 10-bit DACs
|
|
|
1973 |
12 |
5 |
p. 417- 1 p. |
artikel |
5 |
Aegis An/Spy radar system—design for availability
|
|
|
1973 |
12 |
5 |
p. 410- 1 p. |
artikel |
6 |
Aegis operational readiness test system—design for system effectiveness
|
|
|
1973 |
12 |
5 |
p. 410- 1 p. |
artikel |
7 |
A fast logic gate for large scale integration
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
8 |
A glow discharge ion gun for etching
|
|
|
1973 |
12 |
5 |
p. 418- 1 p. |
artikel |
9 |
Analysis of early failures in unequal size samples
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
10 |
An empirical Bayes approach for the Poisson life distribution
|
|
|
1973 |
12 |
5 |
p. 405- 1 p. |
artikel |
11 |
A new method for system reliability evaluation
|
Aggarwal, K.K. |
|
1973 |
12 |
5 |
p. 435-440 6 p. |
artikel |
12 |
A new method to determine the failure frequency of a complex system
|
Singh, C. |
|
1973 |
12 |
5 |
p. 459-465 7 p. |
artikel |
13 |
A new type of charge trapping in MOS systems
|
|
|
1973 |
12 |
5 |
p. 416- 1 p. |
artikel |
14 |
An improvement on structure of charge coupled devices
|
|
|
1973 |
12 |
5 |
p. 416- 1 p. |
artikel |
15 |
An investigation of integrated circuit destruction by noise pulses
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
16 |
An investigation of soldered copper-tin bond brittleness by electron microscopy
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
17 |
Anisotropic boron diffusion in silicon under oxidizing atmospheres
|
|
|
1973 |
12 |
5 |
p. 416- 1 p. |
artikel |
18 |
A note on distributed lumped active all-pass network configuration
|
Bozic, S.M. |
|
1973 |
12 |
5 |
p. 483-484 2 p. |
artikel |
19 |
Approach to reliability for the SM-2 Missile
|
|
|
1973 |
12 |
5 |
p. 409- 1 p. |
artikel |
20 |
A reliability and comparative analysis of two standby system configurations
|
|
|
1973 |
12 |
5 |
p. 409- 1 p. |
artikel |
21 |
Auftrag, Aufgaben, Arbeitsweise eines Qualitätsprüflabors für Bauelemente
|
|
|
1973 |
12 |
5 |
p. 407-408 2 p. |
artikel |
22 |
A unified method for analyzing mission reliability for fault tolerant computer systems
|
|
|
1973 |
12 |
5 |
p. 408-409 2 p. |
artikel |
23 |
Beam leads gaining
|
|
|
1973 |
12 |
5 |
p. 411- 1 p. |
artikel |
24 |
Biphase data transmission system uses IC one-shot as converter doubler
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
25 |
1024-Bit, N-Channel, MOS high-speed read/write memory
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
26 |
4096-Bit RAMs are on the doorstep
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
27 |
Blend ECL and TTL ICs to obtain high frequency counter circuits. Counters up to 500 MHz can be built for systems or beach use
|
|
|
1973 |
12 |
5 |
p. 411-412 2 p. |
artikel |
28 |
BS 9000 and custom-built microelectromics
|
|
|
1973 |
12 |
5 |
p. 410-411 2 p. |
artikel |
29 |
CAD in circuit packaging
|
|
|
1973 |
12 |
5 |
p. 411- 1 p. |
artikel |
30 |
Calculation of avalanche breakdown voltage and depletion layer thickness in a p-n junction with a double error function doping profile
|
|
|
1973 |
12 |
5 |
p. 415- 1 p. |
artikel |
31 |
Calendar of International Conferences, Symposia, Lectures and Meetings of Interest
|
|
|
1973 |
12 |
5 |
p. 397-398 2 p. |
artikel |
32 |
Carrier heating or cooling in semiconductor devices
|
|
|
1973 |
12 |
5 |
p. 415-416 2 p. |
artikel |
33 |
Censored sample size selection for life tests
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
34 |
Circuit designer can influence custom i.c. yields
|
|
|
1973 |
12 |
5 |
p. 411- 1 p. |
artikel |
35 |
C-MOS holds down parts count for digital clocks
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
36 |
Complex system reliability with general repair time distributions under head-of-line-repair-discipline
|
Gupta, P.P. |
|
1973 |
12 |
5 |
p. 445-449 5 p. |
artikel |
37 |
Component defects and system reliability
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
38 |
Computers help design reliable telephone systems
|
|
|
1973 |
12 |
5 |
p. 408- 1 p. |
artikel |
39 |
Conduction mechanisms in screen-and-fired film resistors
|
|
|
1973 |
12 |
5 |
p. 417- 1 p. |
artikel |
40 |
Data communications and the minicomputer
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
41 |
Device design of E/D gate MOSFET
|
|
|
1973 |
12 |
5 |
p. 411- 1 p. |
artikel |
42 |
Digital panel meter. Design, operation and construction of an instrument with a salid-state display and based on an MOS, LSI chip
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
43 |
Discharge of MNOS structures
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
44 |
Discounting utilization in order to optimise reliability choices on an economic level
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
45 |
Economic models for statellite system effectiveness
|
|
|
1973 |
12 |
5 |
p. 408- 1 p. |
artikel |
46 |
Economics influence the design of consumer microcircuits
|
|
|
1973 |
12 |
5 |
p. 411- 1 p. |
artikel |
47 |
Effect of oxidation on orientation-dependent boron diffusion in silicon
|
|
|
1973 |
12 |
5 |
p. 415- 1 p. |
artikel |
48 |
Electron-probe: tool for failure analysis for semiconductor devices
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
49 |
Enterprise liability—let the vendor prepare
|
|
|
1973 |
12 |
5 |
p. 405- 1 p. |
artikel |
50 |
Failure analysis and ebservations with scanning electron microscope
|
|
|
1973 |
12 |
5 |
p. 408- 1 p. |
artikel |
51 |
Failure rate functions from test data
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
52 |
Family of inductorless oscillators derived from gyrater circuits
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
53 |
Fast buffer store has self-control
|
|
|
1973 |
12 |
5 |
p. 412-413 2 p. |
artikel |
54 |
FETs as analog switches
|
Givens, Shelby |
|
1973 |
12 |
5 |
p. 421-428 8 p. |
artikel |
55 |
Field data collection and reliability assurance of solid state devices for industrial use
|
|
|
1973 |
12 |
5 |
p. 409-410 2 p. |
artikel |
56 |
Generating pulses with C-MOS flip-flops
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
57 |
Gold-free film cuts LSI package cost
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
58 |
High-resolution SEM observation of semiconductor device cross-sections
|
|
|
1973 |
12 |
5 |
p. 414-415 2 p. |
artikel |
59 |
IC timers make the most of delay
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
60 |
Improvement of shallow base transistor technology by using a doped poly-silicon diffusion source
|
|
|
1973 |
12 |
5 |
p. 415- 1 p. |
artikel |
61 |
Infrared transmission microscopy utilizing a high-resolution video display
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
62 |
Integrated line oscillator combination TBA920
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
63 |
Interfacing with CMOS
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
64 |
Irradiation test and preselection of maverick diodes for the project symphonie satellite
|
Wagemann, H.G. |
|
1973 |
12 |
5 |
p. 467-472 6 p. |
artikel |
65 |
Laser trimming is an art that must be learned
|
|
|
1973 |
12 |
5 |
p. 418- 1 p. |
artikel |
66 |
Low-cost minicomputer opens up many new system opportunities
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
67 |
Low-energy implantation of boron in silicon
|
|
|
1973 |
12 |
5 |
p. 418- 1 p. |
artikel |
68 |
Maintainability engineering
|
G.W.A.D., |
|
1973 |
12 |
5 |
p. 419- 1 p. |
artikel |
69 |
Maintenance float for small fleet sizes
|
|
|
1973 |
12 |
5 |
p. 408- 1 p. |
artikel |
70 |
Maintenance strategies for ambiguous faults
|
|
|
1973 |
12 |
5 |
p. 410- 1 p. |
artikel |
71 |
Maskentechuik für Integrierte Schaltkreise
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
72 |
Methodology for value engineering
|
|
|
1973 |
12 |
5 |
p. 405- 1 p. |
artikel |
73 |
Microcomputers and QC. statistics: programs and tables
|
|
|
1973 |
12 |
5 |
p. 410- 1 p. |
artikel |
74 |
Microdefects in dislocation-free silicon crystals
|
|
|
1973 |
12 |
5 |
p. 415- 1 p. |
artikel |
75 |
Mimimizing the cost of reliability assurance
|
|
|
1973 |
12 |
5 |
p. 405- 1 p. |
artikel |
76 |
Minimizing the area required for time constants in integrated circuits
|
|
|
1973 |
12 |
5 |
p. 411- 1 p. |
artikel |
77 |
Modeling the bathtub curve
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
78 |
More reliability data from in-flight spacecraft
|
|
|
1973 |
12 |
5 |
p. 408- 1 p. |
artikel |
79 |
MOS circuits in industrial and domestric control
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
80 |
MOS system reduces exhaust pollution
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
81 |
Nonvolatile optical pattern memory using MAOS structure
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
82 |
Notice
|
|
|
1973 |
12 |
5 |
p. 399- 1 p. |
artikel |
83 |
Notices and calls for papers
|
|
|
1973 |
12 |
5 |
p. 401-404 4 p. |
artikel |
84 |
Observation of lattices defects in ion-implanted Si wafer by a double crystal spectrometer method
|
|
|
1973 |
12 |
5 |
p. 418- 1 p. |
artikel |
85 |
On prediction problems in reliability
|
Singh, N. |
|
1973 |
12 |
5 |
p. 451-457 7 p. |
artikel |
86 |
Optimization of system reliability using a parametric approach
|
|
|
1973 |
12 |
5 |
p. 409- 1 p. |
artikel |
87 |
Papers to be published in future issues
|
|
|
1973 |
12 |
5 |
p. 420- 1 p. |
artikel |
88 |
Plasma ions clean and etch integrated circuits
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
89 |
Polycrystalline silicon resistors for integrated circuits
|
|
|
1973 |
12 |
5 |
p. 416- 1 p. |
artikel |
90 |
Polysilicon-filled notch produces flat, well-isolated bipolar memory
|
|
|
1973 |
12 |
5 |
p. 416-417 2 p. |
artikel |
91 |
Precision comparator circuit satifies L.S.I. testing needs
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
92 |
Product liability and consumer risk taking—economic tradeoffs
|
|
|
1973 |
12 |
5 |
p. 405- 1 p. |
artikel |
93 |
Product liability—is no-fault the answer
|
|
|
1973 |
12 |
5 |
p. 405- 1 p. |
artikel |
94 |
Properties of MOS structures prepared on substrates having ion-implanted impurity distribution profile
|
|
|
1973 |
12 |
5 |
p. 418- 1 p. |
artikel |
95 |
Recent advances in the design of micropower operational amplifiers
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
96 |
Reliability analysis of a series system with a standby and a repair facility
|
Gopalan, M.N. |
|
1973 |
12 |
5 |
p. 473-474 2 p. |
artikel |
97 |
Reliability data plotting using the Pearson curves
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
98 |
Reliability in hospital instrumentation
|
|
|
1973 |
12 |
5 |
p. 409- 1 p. |
artikel |
99 |
Reliability of GaAs 1−xPx light emitting diodes
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
100 |
Reliability of maintainable structures
|
|
|
1973 |
12 |
5 |
p. 410- 1 p. |
artikel |
101 |
Reliability optimization with integer constraint coefficients
|
Misra, K.B. |
|
1973 |
12 |
5 |
p. 431-433 3 p. |
artikel |
102 |
Reliability study organization about electromechanical device
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
103 |
Sampling programs for reliability
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
104 |
Self-diagnesis and self-repair in memory: an integrated system approach
|
|
|
1973 |
12 |
5 |
p. 409- 1 p. |
artikel |
105 |
Semiconductor characterization by measurements of non-equilibrium current in MOS capacitors
|
|
|
1973 |
12 |
5 |
p. 416- 1 p. |
artikel |
106 |
Semiconductor memory COFMOS 418
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
107 |
Stacked-gate avalanche-injection type MOS (SAMOS) memory
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
108 |
Study on three-dimensional distribution of implanted ions by He+ backscattering technique
|
|
|
1973 |
12 |
5 |
p. 417- 1 p. |
artikel |
109 |
Testing of spacecraft in long-term sterage
|
|
|
1973 |
12 |
5 |
p. 410- 1 p. |
artikel |
110 |
The assessment of connector reliability
|
Lovelock, R.T. |
|
1973 |
12 |
5 |
p. 475-481 7 p. |
artikel |
111 |
The electrical properties of phosphorous doped silicon layers obtained by ion implantation through a passivating oxide
|
|
|
1973 |
12 |
5 |
p. 417-418 2 p. |
artikel |
112 |
The evaluation of failure and failure related data
|
|
|
1973 |
12 |
5 |
p. 408- 1 p. |
artikel |
113 |
The Intel 1103: the MOS memory that defied cores
|
|
|
1973 |
12 |
5 |
p. 414- 1 p. |
artikel |
114 |
The microwave tubes reliability problem
|
|
|
1973 |
12 |
5 |
p. 407- 1 p. |
artikel |
115 |
Theory of a travelling-wave thin-film GaAs amplifier
|
|
|
1973 |
12 |
5 |
p. 417- 1 p. |
artikel |
116 |
The reliability of coherent structures—A parametric approach
|
Cunningham, L.A. |
|
1973 |
12 |
5 |
p. 441-444 4 p. |
artikel |
117 |
The reliability of failure rates
|
|
|
1973 |
12 |
5 |
p. 406- 1 p. |
artikel |
118 |
The rôle of testing in achieving serospace systems effectiveness
|
|
|
1973 |
12 |
5 |
p. 409- 1 p. |
artikel |
119 |
Thermal noise measurements on space-charge-limited hole current in silicon
|
|
|
1973 |
12 |
5 |
p. 415- 1 p. |
artikel |
120 |
The year for NMOS is coming, with 4-k-bit RAMs and more
|
|
|
1973 |
12 |
5 |
p. 413- 1 p. |
artikel |
121 |
Time dependence of injection currents in SiO2
|
|
|
1973 |
12 |
5 |
p. 417- 1 p. |
artikel |
122 |
Touchless wafer handling
|
|
|
1973 |
12 |
5 |
p. 412- 1 p. |
artikel |
123 |
Transient analysis of complimentary MOS IC inverter
|
|
|
1973 |
12 |
5 |
p. 411- 1 p. |
artikel |
124 |
Trap structure of pyrolytic A1203 in MOS capacitors
|
|
|
1973 |
12 |
5 |
p. 416- 1 p. |
artikel |