| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acceleration factor and constant for accelerated testing of reliability
|
Tomášek, K.F.
|
|
1972
|
11 |
4 |
p. 395-397
3 p.
|
artikel
|
| 2 |
A comparison of manufacturing techniques for hybrid microwave circuits
|
|
|
1972
|
11 |
4 |
p. 323-
1 p.
|
artikel
|
| 3 |
A fail-safe realization of alternating logic
|
|
|
1972
|
11 |
4 |
p. 321-
1 p.
|
artikel
|
| 4 |
A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination
|
|
|
1972
|
11 |
4 |
p. 328-
1 p.
|
artikel
|
| 5 |
A method of solving redundancy optimization problems
|
|
|
1972
|
11 |
4 |
p. 321-
1 p.
|
artikel
|
| 6 |
Analysis of epitaxial layer thickness variability in the fabrication of high performance bipolar transistors
|
|
|
1972
|
11 |
4 |
p. 326-
1 p.
|
artikel
|
| 7 |
Analysis of space-charge induced negative resistance in linearly graded avalancing silicon p-n junctions
|
|
|
1972
|
11 |
4 |
p. 327-
1 p.
|
artikel
|
| 8 |
An introduction to IC testing
|
|
|
1972
|
11 |
4 |
p. 323-
1 p.
|
artikel
|
| 9 |
A novel thick film resistor system
|
|
|
1972
|
11 |
4 |
p. 332-
1 p.
|
artikel
|
| 10 |
An overview of today's thick-film technology
|
|
|
1972
|
11 |
4 |
p. 329-
1 p.
|
artikel
|
| 11 |
Applications of scanning electron microscopy to thin film studies on semiconductor devices
|
|
|
1972
|
11 |
4 |
p. 334-
1 p.
|
artikel
|
| 12 |
A reliability algebra of four-state safety devices
|
Wiggins, Alvin D.
|
|
1972
|
11 |
4 |
p. 335-353
19 p.
|
artikel
|
| 13 |
A theoretical analysis of system quality
|
|
|
1972
|
11 |
4 |
p. 321-
1 p.
|
artikel
|
| 14 |
Basic requirements of equipments for manufacturing thin-film elements by sputtering
|
|
|
1972
|
11 |
4 |
p. 330-
1 p.
|
artikel
|
| 15 |
Beam lead mixer and detector diodes for microwave integrated circuit applications
|
|
|
1972
|
11 |
4 |
p. 325-
1 p.
|
artikel
|
| 16 |
Bias: a network analysis computer program useful to the reliability engineer
|
|
|
1972
|
11 |
4 |
p. 322-
1 p.
|
artikel
|
| 17 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1972
|
11 |
4 |
p. 307-309
3 p.
|
artikel
|
| 18 |
Calls for papers
|
|
|
1972
|
11 |
4 |
p. 317-
1 p.
|
artikel
|
| 19 |
Certain mathematical methods of investigating the reliability and stability of thermionic tube parameters
|
|
|
1972
|
11 |
4 |
p. 321-
1 p.
|
artikel
|
| 20 |
Characteristics of r.f. sputtered barium titanate thin films
|
|
|
1972
|
11 |
4 |
p. 333-
1 p.
|
artikel
|
| 21 |
Classification of reliability tests
|
Tomášek, Karel F.
|
|
1972
|
11 |
4 |
p. 361-367
7 p.
|
artikel
|
| 22 |
Computer aids for IC design, artwork, and mask generation
|
|
|
1972
|
11 |
4 |
p. 325-
1 p.
|
artikel
|
| 23 |
Computer reliability optimization system
|
|
|
1972
|
11 |
4 |
p. 321-322
2 p.
|
artikel
|
| 24 |
Cost analysis of debugging systems
|
|
|
1972
|
11 |
4 |
p. 321-
1 p.
|
artikel
|
| 25 |
Courses
|
|
|
1972
|
11 |
4 |
p. 315-316
2 p.
|
artikel
|
| 26 |
Deformation of single crystal wafers of silicon caused by lapping
|
|
|
1972
|
11 |
4 |
p. 320-
1 p.
|
artikel
|
| 27 |
Design curves for flat square spiral inductors
|
|
|
1972
|
11 |
4 |
p. 325-
1 p.
|
artikel
|
| 28 |
Determination of the composition of thin film compounds using an electron-probe X-ray microanalyzer. Analyzes of nitride films
|
|
|
1972
|
11 |
4 |
p. 329-330
2 p.
|
artikel
|
| 29 |
Dielectric films for capacitor applications in electronic technology
|
|
|
1972
|
11 |
4 |
p. 325-
1 p.
|
artikel
|
| 30 |
Double injection in PβN silicon devices
|
|
|
1972
|
11 |
4 |
p. 327-328
2 p.
|
artikel
|
| 31 |
Dynamic 4096-bit MOST memory in 18-lead DIL package
|
Dummer, G.W.A.
|
|
1972
|
11 |
4 |
p. 391-392
2 p.
|
artikel
|
| 32 |
Effect of stress on the physical properties of thin films
|
|
|
1972
|
11 |
4 |
p. 332-
1 p.
|
artikel
|
| 33 |
Effects of alumina substrate defects on thin-film interconnect patterns
|
|
|
1972
|
11 |
4 |
p. 320-
1 p.
|
artikel
|
| 34 |
Electrical characteristics of double electrode r.f. sputtering systems. II. The effect of the secondary circuit resonant frequency
|
|
|
1972
|
11 |
4 |
p. 333-
1 p.
|
artikel
|
| 35 |
Electrical characteristics of double electrode r.f. sputtering systems. 1. The discharge
|
|
|
1972
|
11 |
4 |
p. 332-
1 p.
|
artikel
|
| 36 |
Electrical fluctuations in silicon double injection devices
|
|
|
1972
|
11 |
4 |
p. 328-
1 p.
|
artikel
|
| 37 |
Electrical properties of some thin-film semiconductor alloys
|
|
|
1972
|
11 |
4 |
p. 327-
1 p.
|
artikel
|
| 38 |
Electrical properties of tellurium thin films
|
|
|
1972
|
11 |
4 |
p. 332-
1 p.
|
artikel
|
| 39 |
Electromigration and failure in electronics: An introduction
|
|
|
1972
|
11 |
4 |
p. 320-321
2 p.
|
artikel
|
| 40 |
Establish the reliability of LSI, ICs
|
|
|
1972
|
11 |
4 |
p. 320-
1 p.
|
artikel
|
| 41 |
Evaporation characteristics of materials from an electron-beam gun
|
|
|
1972
|
11 |
4 |
p. 334-
1 p.
|
artikel
|
| 42 |
Experimental studies of heat transfer from microelectronics
|
|
|
1972
|
11 |
4 |
p. 322-
1 p.
|
artikel
|
| 43 |
Experiments concerning the measurement of floating-emitter potential
|
Bora, J.S.
|
|
1972
|
11 |
4 |
p. 355-359
5 p.
|
artikel
|
| 44 |
Film technology in microwave integrated circuits
|
|
|
1972
|
11 |
4 |
p. 331-
1 p.
|
artikel
|
| 45 |
4 GHz integrated circuit mixer
|
|
|
1972
|
11 |
4 |
p. 325-
1 p.
|
artikel
|
| 46 |
Ignition characteristics of vacuum system components
|
|
|
1972
|
11 |
4 |
p. 329-
1 p.
|
artikel
|
| 47 |
Impurity centers in p-n junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
|
|
|
1972
|
11 |
4 |
p. 327-
1 p.
|
artikel
|
| 48 |
Inexpensive inverters generate VGG for portable MOS applications
|
|
|
1972
|
11 |
4 |
p. 328-
1 p.
|
artikel
|
| 49 |
Interconnection systems for solid-state components in hybrid integrated circuits
|
|
|
1972
|
11 |
4 |
p. 324-
1 p.
|
artikel
|
| 50 |
Interface phenomena in integrated circuit oxides
|
|
|
1972
|
11 |
4 |
p. 327-
1 p.
|
artikel
|
| 51 |
Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si
|
|
|
1972
|
11 |
4 |
p. 324-325
2 p.
|
artikel
|
| 52 |
Interpretation of capacitance vs. voltage measurements of p-n junctions
|
|
|
1972
|
11 |
4 |
p. 326-
1 p.
|
artikel
|
| 53 |
Investigation of defects in SiO2 layer by determining the activation energy of charge carrier diffusion
|
|
|
1972
|
11 |
4 |
p. 328-
1 p.
|
artikel
|
| 54 |
Investigation of tantalum film properties by layers
|
|
|
1972
|
11 |
4 |
p. 331-332
2 p.
|
artikel
|
| 55 |
Ion plating, a method of increasing the adhesion of vacuum deposited films
|
|
|
1972
|
11 |
4 |
p. 333-
1 p.
|
artikel
|
| 56 |
Irradiation effects in SiO2 polymorphs
|
|
|
1972
|
11 |
4 |
p. 328-
1 p.
|
artikel
|
| 57 |
Items of interest
|
|
|
1972
|
11 |
4 |
p. 305-
1 p.
|
artikel
|
| 58 |
LSI tester runs functional checkout at high speed
|
|
|
1972
|
11 |
4 |
p. 323-324
2 p.
|
artikel
|
| 59 |
Mechanical life testing and failure analysis of toggle switches
|
Bora, J.S.
|
|
1972
|
11 |
4 |
p. 393-
1 p.
|
artikel
|
| 60 |
Multilayer metallization for LSI
|
|
|
1972
|
11 |
4 |
p. 323-
1 p.
|
artikel
|
| 61 |
New automatic checking-out procedures for transmission equipment
|
|
|
1972
|
11 |
4 |
p. 319-320
2 p.
|
artikel
|
| 62 |
Noise and nonlinearity in thick film printed resistors
|
|
|
1972
|
11 |
4 |
p. 332-333
2 p.
|
artikel
|
| 63 |
Notices
|
|
|
1972
|
11 |
4 |
p. 311-312
2 p.
|
artikel
|
| 64 |
On accelerated reliability tests of silicon transistors
|
|
|
1972
|
11 |
4 |
p. 320-
1 p.
|
artikel
|
| 65 |
Papers to be published in future issues
|
|
|
1972
|
11 |
4 |
p. 319-
1 p.
|
artikel
|
| 66 |
Plasma diagnostics of sputtering glow discharges
|
|
|
1972
|
11 |
4 |
p. 331-
1 p.
|
artikel
|
| 67 |
P/MOS chip drives liquid crystal display for digital alarm clock
|
|
|
1972
|
11 |
4 |
p. 325-326
2 p.
|
artikel
|
| 68 |
Power supply aspects of semiconductor equipment
|
|
|
1972
|
11 |
4 |
p. 322-
1 p.
|
artikel
|
| 69 |
Problems associated with printing of “thick film” circuits
|
|
|
1972
|
11 |
4 |
p. 331-
1 p.
|
artikel
|
| 70 |
Production of prototype hybrid micro-electronic modules using thin film substrates
|
|
|
1972
|
11 |
4 |
p. 330-
1 p.
|
artikel
|
| 71 |
Production scale electron-beam systems for thin-film applications
|
|
|
1972
|
11 |
4 |
p. 333-334
2 p.
|
artikel
|
| 72 |
Range and straggle of boron in photoresist
|
|
|
1972
|
11 |
4 |
p. 324-
1 p.
|
artikel
|
| 73 |
Recent advances in thin-film silicon devices on sapphire substrates
|
|
|
1972
|
11 |
4 |
p. 326-
1 p.
|
artikel
|
| 74 |
Recently developed instrumentation for control of vacuum deposited thin films
|
|
|
1972
|
11 |
4 |
p. 328-329
2 p.
|
artikel
|
| 75 |
Reliability of a self-repairing system with scheduled maintenance
|
|
|
1972
|
11 |
4 |
p. 321-
1 p.
|
artikel
|
| 76 |
RF sputtering of zinc sulphide
|
|
|
1972
|
11 |
4 |
p. 330-
1 p.
|
artikel
|
| 77 |
Scan generator using “MOST” integrated circuit
|
|
|
1972
|
11 |
4 |
p. 325-
1 p.
|
artikel
|
| 78 |
Screen printed circuit resists for the electronics industry
|
|
|
1972
|
11 |
4 |
p. 324-
1 p.
|
artikel
|
| 79 |
Silicide resistors for integrated circuits
|
|
|
1972
|
11 |
4 |
p. 333-
1 p.
|
artikel
|
| 80 |
Simple data compression by redundancy replacement
|
|
|
1972
|
11 |
4 |
p. 322-
1 p.
|
artikel
|
| 81 |
Small-signal characteristics of lateral transistors
|
|
|
1972
|
11 |
4 |
p. 326-
1 p.
|
artikel
|
| 82 |
Soldering and reliability
|
|
|
1972
|
11 |
4 |
p. 321-
1 p.
|
artikel
|
| 83 |
Some new aspects of electron beam techniques and application possibilities within the electronics industry
|
|
|
1972
|
11 |
4 |
p. 334-
1 p.
|
artikel
|
| 84 |
Some problems of performance in thin film deposition by evaporation and condensation in vacuum
|
|
|
1972
|
11 |
4 |
p. 331-
1 p.
|
artikel
|
| 85 |
Space charge limited currents and negative differential resistance in high-resistivity p-type silicon at various temperatures
|
|
|
1972
|
11 |
4 |
p. 326-327
2 p.
|
artikel
|
| 86 |
Sputtered zinc sulphide films on silicon
|
|
|
1972
|
11 |
4 |
p. 331-
1 p.
|
artikel
|
| 87 |
Sputter etch removal rates of insulators, semiconductors, and conductors
|
|
|
1972
|
11 |
4 |
p. 329-
1 p.
|
artikel
|
| 88 |
Sputtering multilayered conductor films
|
|
|
1972
|
11 |
4 |
p. 330-
1 p.
|
artikel
|
| 89 |
Stochastic behaviour of a complex system with standby redundancy
|
Varma, G.K.
|
|
1972
|
11 |
4 |
p. 377-390
14 p.
|
artikel
|
| 90 |
Synthesis of compound semiconducting materials and device applications
|
|
|
1972
|
11 |
4 |
p. 328-
1 p.
|
artikel
|
| 91 |
Synthesis of fault diagnosable combinational logic circuits
|
|
|
1972
|
11 |
4 |
p. 319-
1 p.
|
artikel
|
| 92 |
Termination materials for thin-film resistors
|
|
|
1972
|
11 |
4 |
p. 330-
1 p.
|
artikel
|
| 93 |
The degradation of MOS transistors resulting from junction avalanche breakdown
|
Dunn, P.J.
|
|
1972
|
11 |
4 |
p. 369-376
8 p.
|
artikel
|
| 94 |
The liquid phase epitaxy of AlxGa1−x As for monolithic planar structures
|
|
|
1972
|
11 |
4 |
p. 326-
1 p.
|
artikel
|
| 95 |
The method for calculating capacitance-voltage characteristics of ideal MIS structures
|
|
|
1972
|
11 |
4 |
p. 328-
1 p.
|
artikel
|
| 96 |
Theory of conduction in thick film conductors
|
|
|
1972
|
11 |
4 |
p. 333-
1 p.
|
artikel
|
| 97 |
The practical implementation and use of CAMP system in the design and production of IC's
|
|
|
1972
|
11 |
4 |
p. 324-
1 p.
|
artikel
|
| 98 |
The relationship between the thick film conductor and substrate and its influence on conductor properties
|
|
|
1972
|
11 |
4 |
p. 329-
1 p.
|
artikel
|
| 99 |
Thermal design of integrated circuits
|
|
|
1972
|
11 |
4 |
p. 324-
1 p.
|
artikel
|
| 100 |
Thermal performance of beam-lead integrated circuits
|
|
|
1972
|
11 |
4 |
p. 323-
1 p.
|
artikel
|
| 101 |
Thermal treatment of Cr-SiO cerment thin films
|
|
|
1972
|
11 |
4 |
p. 331-
1 p.
|
artikel
|
| 102 |
Thermographic technique for identifying sources of heat in miniaturized circuits
|
|
|
1972
|
11 |
4 |
p. 322-
1 p.
|
artikel
|
| 103 |
The structure of thick films and techniques for attaching flip chip microcircuits
|
|
|
1972
|
11 |
4 |
p. 330-331
2 p.
|
artikel
|
| 104 |
The use of perfluoroalkyl polyether fluids in vacuum pumps
|
|
|
1972
|
11 |
4 |
p. 330-
1 p.
|
artikel
|
| 105 |
Thin-film processes for microelectronic application
|
|
|
1972
|
11 |
4 |
p. 329-
1 p.
|
artikel
|
| 106 |
Thin film thermistors
|
|
|
1972
|
11 |
4 |
p. 332-
1 p.
|
artikel
|
| 107 |
Three-dimensional IC packaging—with a twist
|
|
|
1972
|
11 |
4 |
p. 324-
1 p.
|
artikel
|
| 108 |
Vapor deposited tungsten for silicon devices
|
|
|
1972
|
11 |
4 |
p. 331-
1 p.
|
artikel
|
| 109 |
What's happening in MOS
|
|
|
1972
|
11 |
4 |
p. 322-323
2 p.
|
artikel
|
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