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                             21 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Adhesion strength of die attach film for thin electronic package at elevated temperature Mose, Bruno R.
2018
100-101 P1 p. 15-22
artikel
2 A holistic comparison of the different resampling algorithms for particle filter based prognosis using lithium ion batteries as a case study Pugalenthi, Karkulali
2018
100-101 P1 p. 160-169
artikel
3 Analytical model for the transient analysis of electronic assemblies subjected to impact loading Gharaibeh, Mohammad A.
2018
100-101 P1 p. 112-119
artikel
4 A robust asynchronous 16 × 16-bit subthreshold multiplier using SAPTL technique Zhang, Qi
2018
100-101 P1 p. 98-111
artikel
5 Editorial Board 2018
100-101 P1 p. ii
artikel
6 Failure and failure characterization of QFP package interconnect structure under random vibration condition Jiaxing, Hu
2018
100-101 P1 p. 120-127
artikel
7 Heavy ion impact on narrow band cascoded low noise amplifier Rajendiran, P.
2018
100-101 P1 p. 31-37
artikel
8 Implications of electron beam irradiation on Al/n-Si Schottky junction properties Vali, Indudhar Panduranga
2018
100-101 P1 p. 179-184
artikel
9 Lifetime-aware scheduling in high level synthesis Es'haghi, Siavash
2018
100-101 P1 p. 86-97
artikel
10 Methodology of determining the applicability range of the DPL model to heat transfer in modern integrated circuits comprised of FinFETs Zubert, Mariusz
2018
100-101 P1 p. 139-153
artikel
11 Mission profile-based assessment of semiconductor technologies for automotive applications Ahari, Ali
2018
100-101 P1 p. 129-138
artikel
12 New dynamic electro-thermo-optical model of power LEDs Górecki, Krzysztof
2018
100-101 P1 p. 1-7
artikel
13 Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated tests Belaïd, M.A.
2018
100-101 P1 p. 8-14
artikel
14 Seu and Sefi error detection and correction on a ddr3 memory system Cóbreces, Ana
2018
100-101 P1 p. 23-30
artikel
15 Simulation study of single event effects in the SiC LDMOS with a step compound drift region Bao, Meng-tian
2018
100-101 P1 p. 170-178
artikel
16 The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface Chen, Si
2018
100-101 P1 p. 52-66
artikel
17 Thermal reliability investigation of Ag-Sn TLP bonds for high-temperature power electronics application Shao, Huakai
2018
100-101 P1 p. 38-45
artikel
18 The threshold voltage degradation model of N Channel VDMOSFETs under PBT stress Ye, Xuerong
2018
100-101 P1 p. 46-51
artikel
19 To the special issue constructed from the selected papers of Thermal investigations of integrated circuits and systems, THERMINIC'17 Codecasa, Lorenzo
2018
100-101 P1 p. 128
artikel
20 Towards reliability enhancement of graphene FET biosensor in complex analyte: Artificial neural network approach Basu, Joyeeta
2018
100-101 P1 p. 154-159
artikel
21 Validation of different SAC305 material models calibrated on isothermal tests using in-situ TMF measurement of thermally induced shear load Kuczynska, M.
2018
100-101 P1 p. 67-85
artikel
                             21 gevonden resultaten
 
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