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                             2509 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A BICS-based strategy for mitigating the effects of single event transients on SAR converter Gao, Jing
2019
100-101 C p. 45-56
artikel
2 A body built-in cell for detecting transient faults and dynamically biasing subcircuits of integrated systems Ferreira de Paiva Leite, Thiago
2018
100-101 C p. 122-127
artikel
3 A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability Kaczer, B.
2018
100-101 C p. 186-194
artikel
4 A calculation method to estimate single event upset cross section Wrobel, F.
2017
100-101 C p. 644-649
artikel
5 Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test Hayashi, Shin-Ichiro

100-101 C p.
artikel
6 Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring Hayashi, Shin-Ichiro

100-101 C p.
artikel
7 Accelerated Life Test of high luminosity blue LEDs Nogueira, E.
2016
100-101 C p. 631-634
4 p.
artikel
8 Accelerated mechanical low cycle fatigue in isothermal solder interconnects Marbut, Cody J.

100-101 C p.
artikel
9 Accelerative reliability tests for Sn3.0Ag0.5Cu solder joints under thermal cycling coupling with current stressing Zhang, Shuai

100-101 C p.
artikel
10 Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET) Yan, Gangping

100-101 C p.
artikel
11 Accurate determination of the peak channel temperature by an electrical method combined with EL mapping technique in In0.17Al0.83N/GaN HEMTs Chen, Leilei

100-101 C p.
artikel
12 Accurate lifetime prediction for channel hot carrier stress on sub-1nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer Luo, Weichun
2016
100-101 C p. 70-73
4 p.
artikel
13 Achieving microstructure refinement and superior mechanical performance of Sn-2.0Ag-0.5Cu-2.0Zn (SACZ) solder alloy with rotary magnetic field Hammad, A.E.

100-101 C p.
artikel
14 A closed-loop voltage prognosis for lithium-ion batteries under dynamic loads using an improved equivalent circuit model Yang, Jie

100-101 C p.
artikel
15 A cloud-based energy data mining information agent system based on big data analysis technology Lin, Hsueh-Yuan
2019
100-101 C p. 66-78
artikel
16 A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices Shqair, M.

100-101 C p.
artikel
17 A comparative analysis of microstructural features, tensile properties and wettability of hypoperitectic and peritectic Sn-Sb solder alloys Dias, Marcelino
2018
100-101 C p. 150-158
artikel
18 A comparative analysis of printed circuit drying methods for the reliability of assembly process Ciszewski, Piotr

100-101 C p.
artikel
19 A comparative study of lifetime reliability of planar MOSFET and FinFET due to BTI for the 16 nm CMOS technology node based on reaction-diffusion model Mounir Mahmoud, Mohamed
2019
100-101 C p. 53-65
artikel
20 A comparative study of nanostructured Silicon-Nitride electrical properties for potential application in RF-MEMS capacitive switches Birmpiliotis, D.

100-101 C p.
artikel
21 A comparative study of thermal fatigue life of Eutectic Sn-Bi, Hybrid Sn-Bi/SAC and SAC solder alloy BGAs Cai, Chongyang

100-101 C p.
artikel
22 A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs Gu, Qi-Lin
2017
100-101 C p. 362-369
8 p.
artikel
23 A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels Zhang, Peijian
2017
100-101 C p. 86-90
5 p.
artikel
24 A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes Wang, Zhian

100-101 C p.
artikel
25 A composite SystemC-UVM abstract optimal path selection verification architecture for complex designs Sharma, Gaurav

100-101 C p.
artikel
26 A comprehensive framework for cell-aware diagnosis of customer returns d'Hondt, P.

100-101 C p.
artikel
27 A comprehensive solution for electronic packages' reliability assessment with digital image correlation (DIC) method Niu, Yuling
2018
100-101 C p. 81-88
artikel
28 A comprehensive solution for modeling moisture induced delamination in electronic packaging during solder reflow Wang, Jing

100-101 C p.
artikel
29 A computational study of the effect of bond pad thickness on the polysilicon piezoresistivity due to wafer level probing Mane, Sanjay Shrirang

100-101 C p.
artikel
30 A concise study of neutron irradiation effects on power MOSFETs and IGBTs Baghaie Yazdi, M.
2016
100-101 C p. 74-78
5 p.
artikel
31 A cost-effective repair scheme for clustered TSV defects in 3D ICs Maity, Dilip Kumar

100-101 C p.
artikel
32 A cost-efficient error-resilient approach to distributed arithmetic for signal processing Lu, Yue
2019
100-101 C p. 16-21
artikel
33 Acoustic noise and vibration analysis of solid state drive induced by multi-layer ceramic capacitors Kim, Hyunwoo
2018
100-101 C p. 136-145
artikel
34 A cross-layer aging-aware task scheduling approach for multiprocessor embedded systems Karami, Masoomeh
2018
100-101 C p. 190-197
artikel
35 A cross layer approach for efficient thermal management in 3D stacked SoCs Jung, Matthias
2016
100-101 C p. 43-47
5 p.
artikel
36 AC stress reliability study on a novel vertical MOS transistor for non-volatile memory technology Locati, J.

100-101 C p.
artikel
37 Active defects in MOS devices on 4H-SiC: A critical review Amini Moghadam, Hamid
2016
100-101 C p. 1-9
9 p.
artikel
38 Activity-aware prediction of Critical Paths Aging in FDSOI technologies Kannan, Kalpana Senthamarai

100-101 C p.
artikel
39 A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric Ji, Feng
2016
100-101 C p. 24-33
10 p.
artikel
40 Adaptive accelerated aging for 28nm HKMG technology Patra, Devyani
2018
100-101 C p. 149-154
artikel
41 Adaptive and robust prediction for the remaining useful life of electrolytic capacitors Qin, Qi
2018
100-101 C p. 64-74
artikel
42 Adaptive dc-link voltage control strategy to increase PV inverter lifetime Callegari, J.M.S.

100-101 C p.
artikel
43 Adaptive simulation-based framework for error characterization of inexact circuits Bonnot, Justine
2019
100-101 C p. 60-70
artikel
44 A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs) Samy, Omnia
2016
100-101 C p. 82-88
artikel
45 A deep learning-based recognition method for degradation monitoring of ball screw with multi-sensor data fusion Zhang, Li
2017
100-101 C p. 215-222
artikel
46 A defect-oriented test approach using on-Chip current sensors for resistive defects in FinFET SRAMs Medeiros, G.C.
2018
100-101 C p. 355-359
artikel
47 A design and qualification of LED flip Chip-on-Board module with tunable color temperatures Fan, Jiajie
2018
100-101 C p. 140-148
artikel
48 Adhesion of NCF to oxidized Si wafers after oxygen plasma treatment Jang, Min-Seok
2017
100-101 C p. 220-226
7 p.
artikel
49 A 3D numerical study of humidity evolution and condensation risk on a printed circuit board (PCB) exposed to harsh ambient conditions Shojaee Nasirabadi, Parizad
2018
100-101 C p. 39-49
artikel
50 A double snapback SCR ESD protection scheme for 28 nm CMOS process Hu, Tao
2018
100-101 C p. 20-25
artikel
51 A 3-D thermal network model for the temperature monitoring of thermal grease as interface material Zhang, Xiaotong

100-101 C p.
artikel
52 Advanced low damage manufacturing processes to fabricate SOI FinFETs and measurement of electrical properties Kumar, Ashish

100-101 C p.
artikel
53 Advanced power cycler with intelligent monitoring strategy of IGBT module under test Choi, U.M.
2017
100-101 C p. 522-526
artikel
54 Advanced thermal simulation of SiGe:C HBTs including back-end-of-line d'Alessandro, Vincenzo
2016
100-101 C p. 38-45
artikel
55 Advancement in simulating moisture diffusion in electronic packages under dynamic thermal loading conditions Wang, Jing
2017
100-101 C p. 42-53
12 p.
artikel
56 A dynamic partial reconfigurable system with combined task allocation method to improve the reliability of FPGA Wang, Guohua
2018
100-101 C p. 14-24
artikel
57 A dynamic partial reconfiguration design flow for permanent faults mitigation in FPGAs Martins, Victor Manuel Gonçalves
2018
100-101 C p. 50-63
artikel
58 A fast and flexible HW/SW co-processing framework for Time-of-Flight 3D imaging Druml, Norbert
2018
100-101 C p. 64-76
artikel
59 A fast Binary Decision Diagram (BDD)-based reversible logic optimization engine driven by recent meta-heuristic reordering algorithms Abdalhaq, Baker

100-101 C p.
artikel
60 A fast fault injection platform of multiple SEUs for SRAM-based FPGAs Zhang, Rongsheng
2018
100-101 C p. 147-152
artikel
61 A fast simulation method for analysis of SEE in VLSI Lu, Yufan

100-101 C p.
artikel
62 A fault detection strategy using the enhancement ensemble empirical mode decomposition and random decrement technique Xiang, Jiawei
2017
100-101 C p. 317-326
artikel
63 A fault-tolerant control strategy for switched reluctance motor drive for electric vehicles under short-fault condition Ma, Mingyao
2018
100-101 C p. 1221-1225
artikel
64 A fault-tolerant reconfiguration system based on pilot switch for grid-connected inverters Zhao, Ziyi

100-101 C p.
artikel
65 A fault tolerant switched reluctance motor drive for electric vehicles under multi-switches open-fault conditions Yang, Qingqing

100-101 C p.
artikel
66 A fully digital feedback control of gate driver for current balancing of parallel connected power devices Tripathi, R.N.
2018
100-101 C p. 505-509
artikel
67 A fusion prognostics-based qualification test methodology for microelectronic products Pecht, Michael
2016
100-101 C p. 320-324
5 p.
artikel
68 Ageing of glass passivated TRIAC devices under thermal and electrical stress Buvat, Y.

100-101 C p.
artikel
69 A generalized degradation model based on Gaussian process Wang, Zhihua
2018
100-101 C p. 207-214
artikel
70 Aging-aware scheduling and binding in high-level synthesis considering workload effects Es'haghi, Siavash

100-101 C p.
artikel
71 Aging comparative analysis of high-performance FinFET and CMOS flip-flops Taghipour, Shiva
2017
100-101 C p. 52-59
8 p.
artikel
72 Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress Ritter, Matthias
2017
100-101 C p. 512-516
artikel
73 A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory Wei, Debao

100-101 C p.
artikel
74 A high fault coverage test approach for communication channels in network on chip Aghaei, Babak
2017
100-101 C p. 178-186
artikel
75 A highly reliable radiation hardened 8T SRAM cell design Lv, Yinghuan

100-101 C p.
artikel
76 A highly reliable radiation tolerant 13T SRAM cell for deep space applications Yekula, Ravi Teja

100-101 C p.
artikel
77 A humidity-induced novel failure mechanism in power semiconductor diodes Leppänen, J.

100-101 C p.
artikel
78 A hybrid approach for UAV flight data estimation and prediction based on flight mode recognition Wang, Benkuan
2018
100-101 C p. 253-262
artikel
79 A hybrid coding retransmitted chipless tag loaded by microstrip resonator Ma, Zhonghua
2019
100-101 C p. 1-7
artikel
80 A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices Schriefer, Thomas
2019
100-101 C p. 86-94
artikel
81 A hybrid prognostics approach for MEMS: From real measurements to remaining useful life estimation Skima, H.
2016
100-101 C p. 79-88
10 p.
artikel
82 A hybrid system-level prognostics approach with online RUL forecasting for electronics-rich systems with unknown degradation behaviors Al-Mohamad, Ahmad

100-101 C p.
artikel
83 AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers Chiu, Hsien-Chin
2018
100-101 C p. 238-241
artikel
84 A library based on deep neural networks for modeling the degradation of FinFET SRAM performance metrics due to aging Zhang, Rui

100-101 C p.
artikel
85 A lifetime assessment and prediction method for large area solder joints Lederer, M.

100-101 C p.
artikel
86 A lightweight write-assist scheme for reduced RRAM variability and power Aziza, H.
2018
100-101 C p. 6-10
artikel
87 A lithium-ion battery remaining useful life prediction method based on the incremental capacity analysis and Gaussian process regression Pang, Xiaoqiong

100-101 C p.
artikel
88 A low cost fault-attack resilient AES for IoT applications Sheikhpour, Saeideh

100-101 C p.
artikel
89 A low-level software-based fault tolerance approach to detect SEUs in GPUs' register files Gonçalves, Marcio
2017
100-101 C p. 665-669
artikel
90 Alternative manufacturing process of 3-dimensional interconnect device using thermoforming process Zulfiqar, S.

100-101 C p.
artikel
91 Amalgam illogical controller design using amended moth system for heat reduction in insulated gate bipolar transistor Loganathan, P.

100-101 C p.
artikel
92 AM3D: An accurate crosstalk probability modeling to predict channel delay in 3D ICs Shirmohammadi, Zahra
2019
100-101 C p.
artikel
93 A mechanistic model of damage evolution in lead free solder joints under combinations of vibration and thermal cycling with varying amplitudes Borgesen, P.
2019
100-101 C p. 65-73
artikel
94 A memristor-based sensing and repair system for photovoltaic modules Gnoli, Luca

100-101 C p.
artikel
95 A method for simulating the influence of grain boundaries and material interfaces on electromigration Filipovic, Lado
2019
100-101 C p. 38-52
artikel
96 A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating Efthymiou, E.
2016
100-101 C p. 26-32
7 p.
artikel
97 A methodology to determine reliability issues in automotive SiC power modules combining 1D and 3D thermal simulations under driving cycle profiles Matallana, A.
2019
100-101 C p.
artikel
98 A method to determine critical circuit blocks for electromigration based on temperature analysis Nunes, R.O.

100-101 C p.
artikel
99 A method to extract lumped thermal networks of capacitors for reliability oriented design Delmonte, N.

100-101 C p.
artikel
100 A method to improve the accuracy and efficiency for metallized-film capacitor's reliability assessment using joint simulation Yin, Jinpeng

100-101 C p.
artikel
101 A method to improve the reliability of three-level inverter based on equivalent input disturbance and repetitive control combinations Yang, Guoliang

100-101 C p.
artikel
102 A method to prevent hardware Trojans limiting access to layout resources Supon, Tareq Muhammad

100-101 C p.
artikel
103 A method to protect Cuckoo filters from soft errors Reviriego, P.
2017
100-101 C p. 85-89
5 p.
artikel
104 A method to recover critical bits under a double error in SEC-DED protected memories Liu, Shanshan
2017
100-101 C p. 92-96
5 p.
artikel
105 A mission profile-based reliability analysis framework for photovoltaic DC-DC converters Van De Sande, W.

100-101 C p.
artikel
106 A mixed-effects model of two-phase degradation process for reliability assessment and RUL prediction Wang, Hongyu

100-101 C p.
artikel
107 A modified boost rectifier for elimination of circulating current in power factor correction applications Venkitusamy, Karthikeyan
2017
100-101 C p. 29-35
7 p.
artikel
108 A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's Mohammadi, Hossein
2018
100-101 C p. 173-179
artikel
109 A multi-port thermal coupling model for multi-chip power modules suitable for circuit simulators Wang, Z.X.
2018
100-101 C p. 519-523
artikel
110 A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs Azarifar, Mohammad
2017
100-101 C p. 82-87
6 p.
artikel
111 An acoustic emission sensor system for thin layer crack detection Unterreitmeier, M.
2018
100-101 C p. 16-21
artikel
112 An active thermal management strategy for switched reluctance drive system with minimizing current sampling delay Yang, Qingqing

100-101 C p.
artikel
113 An affordable experimental technique for SRAM write margin characterization for nanometer CMOS technologies Alorda, Bartomeu
2016
100-101 C p. 280-288
9 p.
artikel
114 Analog and mixed-signal circuits simulation for product level EMMI analysis Melis, Tommaso

100-101 C p.
artikel
115 An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation Khan, Saqib Ali
2017
100-101 C p. 100-108
9 p.
artikel
116 Analyses on the large size PBGA packaging reliability under random vibrations for space applications Kim, Yeong K.

100-101 C p.
artikel
117 Analysis and modeling of quantization error in spike-frequency-based image sensor Xu, Jiangtao

100-101 C p.
artikel
118 Analysis of ageing effects on ARTIX7 XILINX FPGA Slimani, M.
2017
100-101 C p. 168-173
artikel
119 Analysis of aging effects - From transistor to system level Taddiken, Maike
2016
100-101 C p. 64-73
artikel
120 Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane K.R., Pasupathy
2019
100-101 C p. 56-62
artikel
121 Analysis of counterfeit electronics Mura, G.

100-101 C p.
artikel
122 Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents Gunaydin, Yasin

100-101 C p.
artikel
123 Analysis of deep level defects in bipolar junction transistors irradiated by 2MeV electrons Ma, Yao
2017
100-101 C p. 149-152
4 p.
artikel
124 Analysis of degradation in 25-year-old field-aged crystalline silicon solar cells Oh, Wonwook

100-101 C p.
artikel
125 Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations Tartarin, J.G.

100-101 C p.
artikel
126 Analysis of electrical parameters of InGaN-based LED packages with aging Jayawardena, Asiri
2016
100-101 C p. 22-31
10 p.
artikel
127 Analysis of electromigration failure of nano-interconnects through a combination of modeling and experimental methods Ceric, H.

100-101 C p.
artikel
128 Analysis of errors in estimating wearout characteristics of time-dependent dielectric breakdown using system-level accelerated life test Kim, Dae-Hyun
2017
100-101 C p. 47-52
artikel
129 Analysis of extensive wetting angle vs. cooling rate data in Bi-, Zn- and Sn-based solder alloys Silva, Bismarck Luiz

100-101 C p.
artikel
130 Analysis of indentation measured mechanical properties on Multilayer Ceramic Capacitors (MLCCs) Li, Nga Man
2018
100-101 C p. 528-533
artikel
131 Analysis of low isolation problem in HMC using Ishikawa model: A case study Jayaprasad, G.
2018
100-101 C p. 195-200
artikel
132 Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation Chvála, Aleš
2017
100-101 C p. 148-155
8 p.
artikel
133 Analysis of neutron sensitivity and data-flow error detection in ARM microprocessors using NEON SIMD extensions Lindoso, A.

100-101 C p.
artikel
134 Analysis of nonlinear heat exchange phenomena in natural convection cooled electronic systems De Mey, Gilbert
2016
100-101 C p. 15-20
artikel
135 Analysis of OFF-state dynamic avalanche instability in silicon-on-insulator lateral IGBTs at low temperature Zhang, Long

100-101 C p.
artikel
136 Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current Guan, Jian
2016
100-101 C p. 55-59
5 p.
artikel
137 Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM Ranjan, A.
2016
100-101 C p. 172-178
7 p.
artikel
138 Analysis of radiation effect of a novel SOI-Like LDMOS structure Yang, Yang

100-101 C p.
artikel
139 Analysis of radiation-induced transient errors on 7 nm FinFET technology Azimi, S.

100-101 C p.
artikel
140 Analysis of Schottky emission electric charge transport mechanism in Cu-Lu2O3-Cu MIM structure by temperature dependent current-voltage characteristics Akbar, Shahnaz
2019
100-101 C p.
artikel
141 Analysis of semiconductor fault using DS (damped sinusoidal) HPEM injection Kim, D.S.
2018
100-101 C p. 411-417
artikel
142 Analysis of signal attenuation in global shutter CMOS image sensor Xu, Jiangtao

100-101 C p.
artikel
143 Analysis of slow-current transients or current collapse in AlGaN/GaN HEMTs with field plate and high-k passivation layer Komoto, Kazuki

100-101 C p.
artikel
144 Analysis of solder joint degradation and output power drop in silicon photovoltaic modules for reliability improvement Rabelo, Matheus

100-101 C p.
artikel
145 Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series Lee, Chie-In
2016
100-101 C p. 20-24
5 p.
artikel
146 Analysis of the aging mechanism occurring at the bond-wire contact of IGBT power devices during power cycling Dornic, N.

100-101 C p.
artikel
147 Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions Aguiar, Y.Q.
2018
100-101 C p. 920-924
artikel
148 Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling Dornic, N.
2018
100-101 C p. 462-469
artikel
149 Analysis of the effects of voltage pulses on P3HT:PCBM polymeric solar cells by means of TLP technique Buonomo, M.
2018
100-101 C p. 878-881
artikel
150 Analysis of the impact of power loss due to snail trails in a 95-kWp photovoltaic power system Oh, Wonwook

100-101 C p.
artikel
151 Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate Tang, Shun-Wei

100-101 C p.
artikel
152 Analysis of the successive breakdown statistics of multilayer Al2O3/HfO2 gate stacks using the time-dependent clustering model Muñoz-Gorriz, J.

100-101 C p.
artikel
153 Analysis of the viscoplastic behavior of Pb-free solder using lap shear joints Basit, Munshi M.

100-101 C p.
artikel
154 Analysis of the vulnerability of MEMS tuning fork gyroscope during the gun launch Lian, Jiangkai

100-101 C p.
artikel
155 Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations Zhang, Rui
2017
100-101 C p. 87-91
artikel
156 Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET Ray, Abhishek

100-101 C p.
artikel
157 Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements Pérez-Martín, E.

100-101 C p.
artikel
158 Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies Almeida, R.B.
2018
100-101 C p. 196-202
artikel
159 Analysis on damage and failure behavior of printed silver wires under high-density current loading Sun, Quan

100-101 C p.
artikel
160 Analysis on the damage and recovery of typhoon disaster based on UAV orthograph Wu, Ke-Shou

100-101 C p.
artikel
161 Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs Deng, Erping
2017
100-101 C p. 25-37
13 p.
artikel
162 Analytical calculation method of effect of interconnect layer damage on power cycling lifetime Sato, Y.

100-101 C p.
artikel
163 Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered Zeng, Yan
2017
100-101 C p. 20-26
artikel
164 Analytical model for dynamic avalanche onset of planar IGBTs Yang, Wuhua

100-101 C p.
artikel
165 Analytical model for the inductive turn-off process of GCT with dynamic avalanche Yang, Wuhua

100-101 C p.
artikel
166 Analytical model for total ionizing dose-induced excess base current in PNP BJTs Li, L.

100-101 C p.
artikel
167 Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack S.R., Sriram
2019
100-101 C p. 87-95
artikel
168 Analytical modeling of thermo-mechanical stress for bond wire of IGBT module Dai, Xingyu

100-101 C p.
artikel
169 Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models Wang, YanLing
2016
100-101 C p. 10-15
6 p.
artikel
170 Analyzing and increasing soft error resilience of Deep Neural Networks on ARM processors Liu, Zhi

100-101 C p.
artikel
171 Analyzing the impact of guard-ring on different dual-direction SCR by device simulation and TLP measurement Wang, Yang

100-101 C p.
artikel
172 Analyzing the impact of radiation-induced failures in flash-based APSoC with and without fault tolerance techniques at CERN environment Tambara, L.A.
2017
100-101 C p. 640-643
artikel
173 Analyzing the impact of soft errors in VGG networks implemented on GPUs Wei, Jinghe

100-101 C p.
artikel
174 An analysis of the reliability and design optimization of aluminium ribbon bonds in power electronics modules using computer simulation method Nwanoro, Kenneth Chimezie
2018
100-101 C p. 1-14
artikel
175 An analytical circuit based nonlinear thermal model for capacitor banks Wang, Haoran
2018
100-101 C p. 524-527
artikel
176 An Android mutation malware detection based on deep learning using visualization of importance from codes Yen, Yao-Saint
2019
100-101 C p. 109-114
artikel
177 An easy-implemented confidence filter for signal processing in the complex electromagnetic environment Zhang, Zhen
2018
100-101 C p. 225-229
artikel
178 An efficient EDAC approach for handling multiple bit upsets in memory array Goerl, Roger C.
2018
100-101 C p. 214-218
artikel
179 An efficient NBTI sensor and compensation circuit for stable and reliable SRAM cells Shah, Ambika Prasad
2018
100-101 C p. 15-23
artikel
180 An efficient reliability testing method combined with thermal performance monitoring Hantos, G.
2017
100-101 C p. 126-130
5 p.
artikel
181 An efficient strategy for the development of software test libraries for an automotive microcontroller family Piumatti, D.

100-101 C p.
artikel
182 An efficient temperature dependent hot carrier injection reliability simulation flow Kamal, Mehdi
2016
100-101 C p. 10-19
10 p.
artikel
183 An embedded trace FCCSP substrate without glass cloth Chao, Shin-Hua
2016
100-101 C p. 101-110
10 p.
artikel
184 An empirical model for thermal interface materials based on experimental characterizations under realistic conditions Zhang, Y.
2018
100-101 C p. 806-811
artikel
185 An enhanced MOSFET threshold voltage model for the 6–300K temperature range Dao, Nguyen Cong
2017
100-101 C p. 36-39
4 p.
artikel
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192 A new health estimation model for CNC machine tool based on infinite irrelevance and belief rule base Yin, Xiaojing
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193 A new hermetic sealing method for ceramic package using nanosilver sintering technology Zhang, Hao
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194 A new hierarchical belief-rule-based method for reliability evaluation of wireless sensor network He, Wei
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195 A new high-voltage H2S single noxious gas reliability test for power modules Wassermann, T.N.

100-101 C p.
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196 A newly developed rapid uniform thermal cycle test system for electronic components Ikuno, Hajime
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198 A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory Rodriguez-Fernandez, A.
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100-101 C p.
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203 A new processing method for accelerated degradation data based on quantile regression and pseudo-failure lifetime Yang, Jun
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205 A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching Raciti, Angelo
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206 An examination on the direct concentration approach to simulating moisture diffusion in a multi-material system Liu, Dapeng
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207 An exploration for the degradation behavior of 2-D electrostatic microscanners by accelerated lifetime test Qiao, Dayong
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208 An extensible stability analysis method in time domain for cascaded DC-DC converters in electrical vehicles Li, Hong
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209 An FPGA-based dynamically reconfigurable platform for emulation of permanent faults in ASICs Ullah, A.
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210 An improved accelerated degradation model for LED reliability assessment with self-heating impacts Truong, Minh-Tuan

100-101 C p.
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211 An improved lifetime prediction method for metallized film capacitor considering harmonics and degradation process Lv, Chunlin

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212 An improved modeling for life prediction of high-power white LED based on Weibull right approximation method Zhang, Jianping
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213 An improved reliability model for Si and GaN power FET Golan, Gady
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214 An improved test methodology for detecting one-case latent damage in inverter circuit under ESD pulses Qing, Yihong

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215 An improved unscented particle filter approach for lithium-ion battery remaining useful life prediction Zhang, Heng
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216 An in depth analysis of pull-up capacitance-voltage characteristic for dielectric charging assessment of MEMS capacitive switches Koutsoureli, M.
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217 An in-situ numerical–experimental approach for fatigue delamination characterization in microelectronic packages Poshtan, Emad A.
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218 An investigation of FinFET single-event latch-up characteristic and mitigation method Li, Dongqing

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219 An investigation on IGBT junction temperature estimation using online regression method Liu, Li

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220 An investigation on shielding effectiveness of conductive adhesive Tan, Ligang

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221 An ion beam layer removal method of determining the residual stress in the as-fabricated TSV-Cu/TiW/SiO2/Si interface on a nanoscale Chen, S.

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222 A 28 nm full-margin, high-reliability, and ultra-low-power consumption sense amplifier for STT-MRAM Zheng, S.W.

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223 An observation and explanation of interior cracking at the interface of solder by electromigration Wang, Qizhi
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224 A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode Susinni, G.

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225 An optimal evaluating method for uncertainty metrics in reliability based on uncertain data envelopment analysis Zu, Tianpei
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226 An optimal structural design to improve the reliability of Al2O3–DBC substrates under thermal cycling Xu, Ling
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227 A no-reference error-tolerability test technique for videos via edge and extreme-value checking and its hardware implementation Hsieh, Tong-Yu
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228 A novel accelerated life-test method under thermal cyclic loadings for electronic devices considering multiple failure mechanisms Li, Yaqiu

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229 A novel Bayesian multivariate linear regression model for online state-of-health estimation of Lithium-ion battery using multiple health indicators Lyu, Zhiqiang

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230 A novel BIST for monitoring aging/temperature by self-triggered scheme to improve the reliability of STT-MRAM Zhou, Y.

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233 A novel current-limiting circuit based on resistive-type SFCL for fault in DC power system Shu, Ji
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100-101 C p.
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238 A novel method of reliability-centered process optimization for additive manufacturing Ye, Zhipeng
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239 A novel multiple-stress-based predictive model of LEDs for rapid lifetime estimation Huang, Su-Dan
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100-101 C p.
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242 A novel optimal accelerated degradation test design method considering multiple decision variables Wang, Zhihua

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243 A novel percolation model of leakage fluctuation behavior in gate-control dual-direction silicon controlled rectifier Zhong, Zeyu

100-101 C p.
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244 A novel prediction method based on the support vector regression for the remaining useful life of lithium-ion batteries Zhao, Qi
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245 A novel vertical SCR for ESD protection in 40V HV bipolar process Liu, Fan
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249 A numerical study on the effect of the fixation methods on the vibration fatigue of electronic packages Gharaibeh, Mohammad A.

100-101 C p.
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250 A PCH strong tracking control strategy for power coordinated allocation of Li-SC HESS Wu, Tiezhou
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251 A perspective of the IPC report on lead-free electronics in military/aerospace applications Fortier, Aleksandra
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252 A physical lifetime prediction methodology for IGBT module by explicit emulation of solder layer degradation Wu, Xinlong

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253 A piezoelectric MEMS loudspeaker for in-ear and free field applications lumped and finite element models Liechti, Romain

100-101 C p.
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254 A portable high-density absolute-measure NIRS imager for detecting prefrontal lobe activity under fatigue driving Zhao, Yue
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257 A power transfer model-based method for lithium-ion battery discharge time prediction of electric rotatory-wing UAV Tang, D.Y.

100-101 C p.
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258 Application-aware aging analysis and mitigation for SRAM Design-for-Relability Listl, Alexandra

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259 Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures Muñoz-Gorriz, J.

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260 Application of deuterium oxide (D2O) isotope tracing technique for encapsulated QFN failure analysis Lois, Liao Jinzhi

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261 Application of expectation maximization and Kalman smoothing for prognosis of lumen maintenance life for light emitting diodes Duong, Pham Luu Trung
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262 Application of Fast Laser Deprocessing Techniques on large cross-sectional view area sample with FIB-SEM dual beam system Zhao, Y.Z.
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263 Application of high frequency scanning acoustic microscopy for the failure analysis and reliability assessment of MEMS sensors Oberhoff, S.
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264 Application of laser deprocessing technique in PFA on chemical over-etched on bond-pad issue Yap, H.H.
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265 Application of multi-output Gaussian process regression for remaining useful life prediction of light emitting diodes Duong, Pham Luu Trung
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266 Application of multiplicative dimensional reduction method for uncertainty quantification and sensitivity analysis of MEMS electrostatic actuators Duong, Pham Luu Trung
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267 Application of Scanning Capacitance Microscopy on SOI device with wafer edge low yield pattern Chen, C.Q.
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268 Application of Scanning Microwave Microscopy nano-C-V to investigate dopant defect under a poly gate device Amster, O.
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269 Application of the defect clustering model for forming, SET and RESET statistics in RRAM devices Raghavan, Nagarajan
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270 Applications of fracture mechanics to quantitative accelerated life testing of plastic encapsulated microelectronics Evans, John W.
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271 Applications of the pulsed current-voltage (I-V) and capacitance-voltage (C-V) techniques for high-resistive gates in MOSFETs Lai, LiLung
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272 Approximate TMR based on successive approximation and loop perforation in microprocessors Rodrigues, G.S.

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273 A prediction method for discharge voltage of lithium-ion batteries under unknown dynamic loads Yu, Jinsong
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274 A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops Duoli, Li

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275 A probe-based SEU detection method for SRAM-based FPGAs Sterpone, Luca
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276 A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28nm FDSOI Wang, Y.
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277 A prognostic method for predicting failure of dc/dc converter Qingchuan, He
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278 A prognostic methodology for power MOSFETs under thermal stress using echo state network and particle filter Li, Z.
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279 A programmable checker for automated 2.5D/3D IC latch-up verification and hot junctions detection Medhat, Dina

100-101 C p.
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280 A radiation-hardened Sense-Switch pFLASH cell for FPGA Liu, Guozhu

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281 A rapid life-prediction approach for solder joints based on modified Engelmaier fatigue model Pan, Yuxiong

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282 Arbitrary Reduced Precision for Fine-grained Accuracy and Energy Trade-offs Ait Said, Noureddine

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283 Area-efficient dual-diode with optimized parasitic bipolar structure for rail-based ESD protections Wang, Hui

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284 A reliability assessment approach for a Hodgkin-Huxley neuron circuit Sun, Bo

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285 A reliability assessment guide for the transition planning to lead-free electronics for companies whose products are RoHS exempted or excluded Pecht, Michael
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286 A reliability evaluation method for multi-performance degradation products based on the Wiener process and Copula function Pan, Guangze

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287 A reliable integrative autocorrelator device for particle fluctuation rate monitoring Pan, Boan
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289 A remaining useful life prediction method of IGBT based on online status data Zhang, Jinli

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290 A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric Zhang, Qingwei
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294 A review of NBTI mechanisms and models Mahapatra, Souvik
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295 A review of pulsed NBTI in P-channel power VDMOSFETs Danković, D.
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296 A review on discoloration and high accelerated testing of optical materials in LED based-products Yazdan Mehr, M.
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297 A review on the humidity reliability of high power white light LEDs Singh, Preetpal
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298 A risk-based approach to forecasting component obsolescence Mastrangelo, Christina M.

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299 A row hammer pattern analysis of DDR2 SDRAM Versen, M.
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300 A run-time built-in approach of TID test in SRAM based FPGAs Ma, Ning
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301 A self-adaptive DBSCAN-based method for wafer bin map defect pattern classification Chen, Shouhong

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302 As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction Zhang, J.F.
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303 A Π-shaped p-GaN HEMT for reliable enhancement mode operation Sehra, Khushwant

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304 A similarity based prognostics approach for real time health management of electronics using impedance analysis and SVM regression Lee, Changyong
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305 A simple 1-D finite elements approach to model the effect of PCB in electronic assemblies Chiozzi, D.
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307 A simulating method of moisture continuous diffusion under changing temperatures and analysis of moisture-induced stresses covering moisture desorption and reflow processes for the QFN Shi, Xinghua

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308 A simulation-based analysis of effect of interface trap charges on dc and analog/HF performances of dielectric pocket SOI-Tunnel FET Pandey, Chandan K.

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309 A simulation-based evaluation of single-event burnout mechanisms and varied SEB hardening designs in power LDMOS transistors Lei, Yibo

100-101 C p.
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310 A simulation-based methodology for aiding advanced driver assistance systems hazard analysis and risk assessment Sini, Jacopo

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311 A single event upset hardened flip-flop design utilizing layout technique Wang, Haibin
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313 A soft-error-tolerant, 1.25 GHz to 3.125 GHz, 3.18 ps RMS-jitter CPPLL in 40 nm CMOS process Guo, Qiancheng

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314 Assembly yield prediction of plastically encapsulated packages with a large number of manufacturing variables by advanced approximate integration method Wei, Hsiu-Ping
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315 Assessing body built-in current sensors for detection of multiple transient faults Viera, R.A.C.
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316 Assessing multi-output Gaussian process regression for modeling of non-monotonic degradation trends of light emitting diodes in storage Lim, S.L.H.

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317 Assessment of sense measurement duration on BTI degradation in MG/HK CMOS technologies using a novel stacked transistor test structure Kerber, Andreas
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318 A statistical study into reliability of FPGA implemented circuits: Simulation and modelling Aguirre-Morales, J.D.

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319 A statistical study to identify the effects of packaging structures on lumen reliability of LEDs Chen, Qi
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322 A study of material stoichiometry on charging properties of SiNx films for potential application in RF MEMS capacitive switches Koutsoureli, M.

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323 A study on the interfacial adhesion energy between capping layer and dielectric for cu interconnects Kim, Cheol

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324 A study on the reliability of equipment system through case-study on the manufacture of machinery/electronic equipment using practical QRM (quality, reliability, maintenance) process and evaluation index Yoon, Y.G.

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325 A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors Wang, Weiliang
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326 A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis Ceccarelli, L.
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327 Asymmetric aging effect on modern microprocessors Gabbay, Freddy

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328 A symmetric D flip-flop based PUF with improved uniqueness Khan, Sajid

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329 Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure Zhang, D.
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330 Asynchronous early output majority voter and a relative-timed asynchronous TMR implementation Balasubramanian, Padmanabhan

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331 A testing method for evaluating shoot-through immunity of IGBTs in an inverter Hasegawa, K.

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332 A theoretical study to improve wire sag of ultra-long wire bond loops for 3D/MCM packaging Kung, Huang-Kuang
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337 Atmospheric corrosion resistance of electroplated Ni/Ni–P/Au electronic contacts Murugan, Vinod K.
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342 Automated abstraction of nonlinear analog circuits to reliable set-valued models with reduced overapproximation Rechmal-Lesse, Malgorzata

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345 Automated quantitative analysis of void morphology evolution in AgAg direct bonding interface after accelerated aging Yu, Z.

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346 Automatic characterisation method for statistical evaluation of tin whisker growth Krammer, Olivér
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348 Automatized failure analysis of tungsten coated TSVs via scanning acoustic microscopy Grünwald, E.
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362 Basic single-event mechanisms in Ge-based nanoelectronics subjected to terrestrial atmospheric neutrons Munteanu, D.

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364 Behavioral modelling of PROFET™ devices for system-level simulation of mission profiles in automotive environment applications Simonazzi, Marco

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365 Benchmarking of capacitor power loss calculation methods for wear-out failure prediction in PV inverters Lenz, João M.

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366 Bending reliability of flexible transparent electrode of gravure offset printed invisible silver-grid laminated with conductive polymer Ohsawa, Masato
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100-101 C p.
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372 Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance Lenahan, P.M.
2018
100-101 C p. 1-6
artikel
373 Bias temperature instability and condition monitoring in SiC power MOSFETs Ortiz Gonzalez, J.
2018
100-101 C p. 557-562
artikel
374 Bias temperature instability in scaled CMOS technologies: A circuit perspective Kerber, A.
2018
100-101 C p. 31-40
artikel
375 Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena Tsukuda, M.
2018
100-101 C p. 482-485
artikel
376 Big data analysis for distributed computing job scheduling and reliability evaluation Wang, Shiow-Luan
2019
100-101 C p. 41-45
artikel
377 Body diode reliability investigation of SiC power MOSFETs Fayyaz, A.
2016
100-101 C p. 530-534
5 p.
artikel
378 Border traps and bias-temperature instabilities in MOS devices Fleetwood, D.M.
2018
100-101 C p. 266-277
artikel
379 B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages Cowley, A.
2016
100-101 C p. 108-116
9 p.
artikel
380 BTI mitigation by anti-ageing software patterns Abbas, Haider Muhi
2017
100-101 C p. 79-90
12 p.
artikel
381 BTI saturation and universal relaxation in SiC power MOSFETs Sánchez, Luis

100-101 C p.
artikel
382 Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment Borga, M.

100-101 C p.
artikel
383 Building ATMR circuits using approximate library and heuristic approaches Albandes, I.
2019
100-101 C p. 24-30
artikel
384 Built-in self-repair structure for real-time fault recovery applications Zandevakili, Hamed

100-101 C p.
artikel
385 Cache lifetime enhancement technique using hybrid cache-replacement-policy Priya, Bhukya Krishna
2019
100-101 C p. 1-15
artikel
386 Calculation of single event burnout failure rate for high voltage devices under satellite orbit without fitting parameters Sudo, M.

100-101 C p.
artikel
387 Calendar and cycling ageing combination of batteries in electric vehicles Redondo-Iglesias, Eduardo
2018
100-101 C p. 1212-1215
artikel
388 Calendar degradation of Li-ion batteries under high storage temperature based on electrochemical impedance spectroscopy Sun, Yongquan

100-101 C p.
artikel
389 Can automotive MEMS be reliably used in space applications? An assessment method under sequential bi-parameter testing Auchlin, Maxime

100-101 C p.
artikel
390 Capacitive effects in IGBTs limiting their reliability under short circuit Reigosa, P.D.
2017
100-101 C p. 485-489
artikel
391 Capacitive micromachined ultrasonic transducers leak detection by dye penetrant test Nowodzinski, A.

100-101 C p.
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392 Capacitor loss analysis method for power electronics converters Matsumori, H.
2018
100-101 C p. 443-446
artikel
393 Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays Bourgeois, G.

100-101 C p.
artikel
394 Carbon-related defects in microelectronics Kolkovsky, Vl.
2017
100-101 C p. 145-148
artikel
395 Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes Souto, J.
2016
100-101 C p. 627-630
4 p.
artikel
396 CFD modeling of additive manufacturing liquid cold plates for more reliable power press-pack assemblies Cova, P.

100-101 C p.
artikel
397 Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices Tetzner, Kornelius

100-101 C p.
artikel
398 Change in trap characteristics during fatigue of Au/BiFeO3/SrRuO3 Jin, Lei

100-101 C p.
artikel
399 Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel Kim, Hyeokjin

100-101 C p.
artikel
400 Channel width dependence of AC stress on bulk nMOSFETs Son, Donghee
2016
100-101 C p. 194-198
5 p.
artikel
401 Characterisation & modelling of perovskite-based synaptic memristor device Gupta, Vishal

100-101 C p.
artikel
402 Characterisation of defects generated during constant current InGaN-on-silicon LED operation Made, R.I
2017
100-101 C p. 561-565
artikel
403 Characteristics and reliability of VDMOS under capacitive loads Zhang, Yulong
2019
100-101 C p. 8-15
artikel
404 Characteristics of ESD protection devices operated under elevated temperatures Liang, Wei
2016
100-101 C p. 46-51
6 p.
artikel
405 Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors Garros, Xavier
2018
100-101 C p. 100-108
artikel
406 Characterization method of IGBT comprehensive health index based on online status data Zhang, Jinli

100-101 C p.
artikel
407 Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias Ruzzarin, M.

100-101 C p.
artikel
408 Characterization of cyclic delamination behavior of thin film multilayers Walter, T.
2018
100-101 C p. 721-725
artikel
409 Characterization of electrically stressed power device metallization using nano-CT imaging Mueller, Dominik

100-101 C p.
artikel
410 Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures Moultif, N.
2017
100-101 C p. 243-248
artikel
411 Characterization of Low Drop-Out during ageing and design for yield Lajmi, R.
2017
100-101 C p. 92-96
artikel
412 Characterization of materials and their interfaces in a direct bonded copper substrate for power electronics applications Kabaar, A. Ben
2017
100-101 C p. 288-296
9 p.
artikel
413 Characterization of MIS structures and thin film transistors using RF-sputtered HfO2/HIZO layers Hernandez, I.
2017
100-101 C p. 9-13
artikel
414 Characterization of plastic and creep behavior in thick aluminum wire for power modules Shishido, Nobuyuki

100-101 C p.
artikel
415 Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFET Roh, Giyoun

100-101 C p.
artikel
416 Characterization of single-event transients induced by high LET heavy ions in 16 nm bulk FinFET inverter chains Chi, Yaqing

100-101 C p.
artikel
417 Characterization of the onset of carrier multiplication in power devices by a collimated radioactive alpha source Ciappa, Mauro

100-101 C p.
artikel
418 Characterization on acceleration-factor equation for packaging-solder joint reliability Wu, K.-C.
2016
100-101 C p. 167-172
6 p.
artikel
419 Characterizing a RISC-V SRAM-based FPGA implementation against Single Event Upsets using fault injection Ramos, Alexis
2017
100-101 C p. 205-211
7 p.
artikel
420 Charge and energy deposition in thick silicon depletion layers by environmental ionizing radiation and terrestrial cosmic rays Pang, Ying
2018
100-101 C p. 992-997
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421 Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature Chiocchetta, F.

100-101 C p.
artikel
422 Charge trapping related channel modulation instability in P-GaN gate HEMTs Li, Xueyang
2016
100-101 C p. 35-40
6 p.
artikel
423 Charging–discharging characteristics of a wound aluminum polymer capacitor Jeong, U.H.
2016
100-101 C p. 447-452
6 p.
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424 Charging mechanisms in Y2O3 dielectric films for MEMS capacitive switches Birmpiliotis, D.
2018
100-101 C p. 840-845
artikel
425 CHARM facility remotely controlled platform at CERN: A new fault-tolerant redundant architecture Toscani, A.

100-101 C p.
artikel
426 Chemical rate phenomenon approach applied to lithium battery capacity fade estimation Baghdadi, I.
2016
100-101 C p. 134-139
6 p.
artikel
427 Chip package interaction for LED packages Zhang, Sung-Uk
2016
100-101 C p. 76-81
6 p.
artikel
428 Choice of granularity for reliable circuit design using dynamic reconfiguration Mukherjee, Atin
2016
100-101 C p. 291-303
13 p.
artikel
429 CIRCA: Towards a modular and extensible framework for approximate circuit generation Witschen, Linus
2019
100-101 C p. 277-290
artikel
430 Circuit analysis to predict humidity related failures in electronics - Methodology and recommendations Joshy, Salil
2019
100-101 C p. 81-88
artikel
431 Circuit design using Schmitt Trigger to reliability improvement Zimpeck, A.L.

100-101 C p.
artikel
432 Circuit simulation assisting Physical Fault Isolation for effective root cause analysis Boostandoost, M.
2017
100-101 C p. 194-200
artikel
433 Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition Richardeau, F.

100-101 C p.
artikel
434 Clamp type built-in current sensor using PCB in high-voltage power modules Tsukuda, M.
2017
100-101 C p. 517-521
artikel
435 Climate specific thermomechanical fatigue of flat plate photovoltaic module solder joints Bosco, Nick
2016
100-101 C p. 124-129
6 p.
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436 Clocked and event-driven redundant adjustable precision computing Skaf, Ali

100-101 C p.
artikel
437 CMOS micro-heater design for direct integration of carbon nanotubes Roy, Avisek
2017
100-101 C p. 517-525
9 p.
artikel
438 CNN weight sharing based on a fast accuracy estimation metric Dupuis, Etienne

100-101 C p.
artikel
439 Cobalt and Ruthenium drift in ultra-thin oxides Tierno, D.

100-101 C p.
artikel
440 60Co gamma radiation total ionizing dose combined with conducted electromagnetic interference studies in BJTs Lawal, Olarewaju Mubashiru
2018
100-101 C p. 159-164
artikel
441 Cold temperature power on reset use case van Veenhuizen, Marc

100-101 C p.
artikel
442 Colorimetric visualization of tin corrosion: A method for early stage corrosion detection on printed circuit boards Verdingovas, Vadimas
2017
100-101 C p. 158-166
9 p.
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443 Color shift acceleration on mid-power LED packages Lu, Guangjun
2017
100-101 C p. 294-298
5 p.
artikel
444 Combined creep characterisation from single lap shear tests and 3D implementation for fatigue simulations Pin, S.
2017
100-101 C p. 368-372
artikel
445 Combined effect of Bi and Ni elements on the mechanical properties of low-Ag Cu/Sn-0.7Ag-0.5Cu/Cu solder joints Kong, Xiangxia

100-101 C p.
artikel
446 Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test Zhao, D.

100-101 C p.
artikel
447 Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures Pribahsnik, F.P.
2018
100-101 C p. 389-392
artikel
448 Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules Scognamillo, Ciro

100-101 C p.
artikel
449 Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits Goerl, Roger

100-101 C p.
artikel
450 Combined simulation and optical measurement technique for investigation of system effects on components solder fatigue Dudek, R.
2018
100-101 C p. 162-172
artikel
451 Comments on “Extend orthogonal Latin square codes for 32-bit data protection in memory applications” Microelectron. Reliab. 63, 278–283 (2016) Liu, Shanshan
2017
100-101 C p. 126-129
4 p.
artikel
452 Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation Poling, B.S.
2017
100-101 C p. 13-20
8 p.
artikel
453 Compact conduction band model for transition-metal dichalcogenide alloys Chen, Kuan-Ting
2018
100-101 C p. 223-229
artikel
454 Compact distributed multi-finger MOSFET model for circuit-level ESD simulation Meng, Kuo-hsuan
2016
100-101 C p. 11-21
11 p.
artikel
455 Compact modeling of dynamic trap density evolution for predicting circuit-performance aging Miura-Mattausch, M.
2018
100-101 C p. 164-175
artikel
456 Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate Majumdar, Shubhankar
2017
100-101 C p. 389-395
7 p.
artikel
457 Comparative evaluation of reliability assessment methods of power modules in motor drive inverter Choi, U.M.

100-101 C p.
artikel
458 Comparative evaluations on scallop-induced electric-thermo-mechanical reliability of through-silicon-vias Cheng, Zhiqiang

100-101 C p.
artikel
459 Comparative studies on microelectronic reliability issue of Sn whisker growth in Sn-0.3Ag-0.7Cu-1Pr solder under different environments Wu, Jie
2017
100-101 C p. 124-135
12 p.
artikel
460 Comparative study of low-frequency noise in 0.18μm and 0.35μm gate-length nMOSFETs with gate area of 1.1μm2 Hu, Chih-Chan
2016
100-101 C p. 10-15
6 p.
artikel
461 Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices Yu, Zhihui
2016
100-101 C p. 111-114
4 p.
artikel
462 Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal Zhou, Longda

100-101 C p.
artikel
463 Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation Schvittz, R.B.

100-101 C p.
artikel
464 Comparing the degradation effect of a ‘two-cell’ Supercapacitor-module with and without voltage equalization circuit(s) under experimental self-discharge and load cycling tests Ahmad Abubakar, Hadiza
2017
100-101 C p. 140-148
9 p.
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465 Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes Ren, Jian
2016
100-101 C p. 82-86
5 p.
artikel
466 Comparison of experimental, analytical and simulation methods to estimate substrate material properties for warpage reliability analysis Selvanayagam, Cheryl
2018
100-101 C p. 817-823
artikel
467 Comparison of fatigue life prediction methods for solder joints under random vibration loading Xia, Jiang
2019
100-101 C p. 58-64
artikel
468 Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes Li, Pei

100-101 C p.
artikel
469 Comparison of hydrothermal performance between plate fins and plate-pin fins subject to nanofluid-cooled corrugated miniature heat sinks Khoshvaght-Aliabadi, M.
2017
100-101 C p. 84-96
13 p.
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470 Comparison of lithium-ion battery performance at beginning-of-life and end-of-life Stroe, A.-I.
2018
100-101 C p. 1251-1255
artikel
471 Comparison of power cycling reliability of flexible PCB interconnect smaller/thinner and larger/thicker power devices with topside Sn-3.5Ag solder joints Li, Jianfeng
2018
100-101 C p. 55-65
artikel
472 Comparison of reliability impacts of two active power curtailment methods for PV micro-inverters Gagrica, Ognjen
2016
100-101 C p. 133-140
8 p.
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473 Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology Dammann, M.
2018
100-101 C p. 385-388
artikel
474 Comparison of temperature sensitive electrical parameter based methods for junction temperature determination during accelerated aging of power electronics Wuest, F.
2018
100-101 C p. 534-539
artikel
475 Comparison of the electro-thermal constraints on SiC MOSFET and Si IGBT power modules in photovoltaic DC/AC inverters Dbeiss, Mouhannad
2017
100-101 C p. 65-71
7 p.
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476 Comparison of the instability in device characteristics for thin-film SOI power n- and p-MOSFETs at high temperature under AC stress Yamanishi, Riki

100-101 C p.
artikel
477 Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT Reigosa, P.D.
2016
100-101 C p. 524-529
6 p.
artikel
478 Comparisons of SnO2 gas sensor degradation under elevated storage and working conditions Sun, Yongquan

100-101 C p.
artikel
479 Comparison study of gold coatings prepared by traditional and modified galvanic replacement deposition for corrosion prevention of copper Zhang, Xingkai

100-101 C p.
artikel
480 Comparison study on microstructure and mechanical properties of Sn-10Bi and Sn-Ag-Cu solder alloys and joints Guo, Qinhan
2017
100-101 C p. 72-79
8 p.
artikel
481 Comphy — A compact-physics framework for unified modeling of BTI Rzepa, G.
2018
100-101 C p. 49-65
artikel
482 Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study Marcello, G.
2018
100-101 C p. 294-298
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483 Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices Mei, Sen
2016
100-101 C p. 71-77
7 p.
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484 Component Reliability Importance assessment on complex systems using Credible Improvement Potential Catelani, Marcantonio
2016
100-101 C p. 113-119
7 p.
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485 Comprehensive physical analysis of bond wire interfaces in power modules Popok, Vladimir N.
2016
100-101 C p. 58-64
7 p.
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486 Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length Kim, Junyeap
2018
100-101 C p. 66-70
artikel
487 Computational evaluation of optimal reservoir and sink lengths for threshold current density of electromigration damage considering void and hillock formation Takaya, Ryuji

100-101 C p.
artikel
488 Concurrent fault detection and location with minimal overhead in Ling parallel prefix adders with a scheme for fault tolerant Ling prefix adders Iqbal, Asma

100-101 C p.
artikel
489 Condition multi-classification and evaluation of system degradation process using an improved support vector machine Miao, Qiang
2017
100-101 C p. 223-232
artikel
490 Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests Douzi, Shawki
2018
100-101 C p. 219-224
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491 Conducted EMI mitigation in transformerless PV inverters based on intrinsic MOSFET parameters Kraiem, S.

100-101 C p.
artikel
492 Conducted EMI susceptibility analysis of a COTS processor as function of aging Benfica, Juliano

100-101 C p.
artikel
493 Conducted EMI susceptibility analysis of a COTS processor as function of thermal cycling and overvoltage stresses Soares, Matheus Fay

100-101 C p.
artikel
494 Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight Shubhakar, K.
2016
100-101 C p. 204-209
6 p.
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495 Configurable gate driver for a stress test bench of newly developed discrete silicon power devices Patmanidis, Konstantinos

100-101 C p.
artikel
496 Considerations in printing conductive traces for high pulsed power applications Aga, Roberto S.
2018
100-101 C p. 342-351
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497 Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment Li, B.
2018
100-101 C p. 969-973
artikel
498 Constituents and performance of no-clean flux for electronic solder Wakeel, Saif

100-101 C p.
artikel
499 Constitutive equations for strain rate and temperature dependent mechanical behaviour of porous Ag-sintered joints in electronic packages Lederer, M.

100-101 C p.
artikel
500 Constitutive modeling of solder alloys for drop-impact applications Wong, E.H.
2016
100-101 C p. 135-142
artikel
501 Constitutive modelling on the whole-life uniaxial ratcheting behavior of sintered nano-scale silver paste at room and high temperatures Chen, Gang
2018
100-101 C p. 47-54
artikel
502 Constructal design for the layout of multi-chip module based on thermal-flow-stress coupling calculation Nan, Gang

100-101 C p.
artikel
503 Contactless device characterization of transistor structures in silicon using electro optical frequency mapping (EOFM) Beyreuther, A.

100-101 C p.
artikel
504 Contactless parametric characterization of bandgap engineering in p-type FinFETs using spectral photon emission Beyreuther, A.
2019
100-101 C p. 143-148
artikel
505 Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs Benvegnù, A.
2016
100-101 C p. 535-540
6 p.
artikel
506 Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation Li, Ruibin
2019
100-101 C p. 42-48
artikel
507 Controllable micrometer positioning design of piezoelectric actuators using a robust fuzzy eliminator Chen, Yung-Yue

100-101 C p.
artikel
508 Controversial issues in negative bias temperature instability Stathis, James H.
2018
100-101 C p. 244-251
artikel
509 Converter-level FEM simulation for lifetime prediction of an LED driver with improved thermal modelling Niu, H.
2017
100-101 C p. 117-122
artikel
510 Converter monitoring in a wind turbine application Rannestad, Bjorn
2018
100-101 C p. 1008-1013
artikel
511 Convolutional neural network (CNNs) based image diagnosis for failure analysis of power devices Watanabe, Akihiko

100-101 C p.
artikel
512 Cooling-controlled and reliable driving module for low-level light therapy LED helmet Wang, Pengbo
2017
100-101 C p. 370-373
4 p.
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513 Cooling performance and characteristics of metal piezoelectric fans in a heat sink-equipped handheld projector Shyu, Jin-Cherng
2018
100-101 C p. 75-87
artikel
514 Copper electrochemical migration growth in an air HAST Oh, Sangjoo

100-101 C p.
artikel
515 Copper induced synthesis of graphene using amorphous carbon Narula, Udit
2016
100-101 C p. 87-90
4 p.
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516 Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy Herms, M.
2016
100-101 C p. 330-335
6 p.
artikel
517 Co-relation scan attack analysis (COSAA) on AES: A comprehensive approach Sao, Yogendra

100-101 C p.
artikel
518 Correctable and uncorrectable errors using large scale DRAM DIMMs in replacement network servers Baeg, Sanghyeon
2019
100-101 C p. 104-112
artikel
519 Correction factors to strength of thin silicon die in three- and four-point bending tests due to nonlinear effects Tsai, M.Y.

100-101 C p.
artikel
520 Correction strategy for wear-out prediction of PV inverters considering the mission profile resolution effects Silva, R.P.

100-101 C p.
artikel
521 Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs Sapienza, S.

100-101 C p.
artikel
522 Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics Knetzger, Michael
2016
100-101 C p. 16-21
6 p.
artikel
523 Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures Broas, M.
2016
100-101 C p. 541-546
6 p.
artikel
524 Correlative microscopy workflow for precise targeted failure analysis of multi-layer ceramic capacitors May, Nicholas

100-101 C p.
artikel
525 Corrigendum to “A soft-error-tolerant, 1.25 GHz to 3.125 GHz, 3.18 ps RMS-jitter CPPLL in 40 nm CMOS process” [Microelectron. Reliab. volume 124 (2021) 114337] Guo, Qiancheng

100-101 C p.
artikel
526 Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69] Wang, Weiliang
2016
100-101 C p. 159
artikel
527 Corrosion behavior of crystalline silicon solar cells Xiong, Huaping
2017
100-101 C p. 49-58
10 p.
artikel
528 Corrosion behavior of Sn-3.0Ag-0.5Cu lead-free solder joints Wang, Mingna
2017
100-101 C p. 69-75
7 p.
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529 Corrosion behaviour of sintered silver under maritime environmental conditions Kolbinger, E.
2018
100-101 C p. 715-720
artikel
530 Corrosion on automobile printed circuit broad Tseng, Tsan-Hsien
2019
100-101 C p. 19-23
artikel
531 Corrosion testing of anisotropic conductive adhesive interconnections on FR4, liquid crystal polymer and polyimide substrates Parviainen, Anniina
2016
100-101 C p. 114-120
7 p.
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532 Co-simulation of MATLAB and ANSYS for ultrasonic wire bonding process optimization Schemmel, Reinhard

100-101 C p.
artikel
533 Coupled simulations for lifetime prediction of board level packages encapsulated by thermoset injection moulding based on the Coffin-Manson relation Kulkarni, R.

100-101 C p.
artikel
534 Coupling damage and reliability modeling for creep and fatigue of solder joint Chen, Yunxia
2017
100-101 C p. 233-238
artikel
535 Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors Lee, Sang Myung
2016
100-101 C p. 84-87
4 p.
artikel
536 Crack identification and evaluation in BEoL stacks of two different samples utilizing acoustic emission testing and nano X-ray computed tomography Silomon, Jendrik

100-101 C p.
artikel
537 Creep fatigue models of solder joints: A critical review Wong, E.H.
2016
100-101 C p. 1-12
12 p.
artikel
538 Creeping corrosion of copper on printed circuit board assemblies Vogel, G.
2016
100-101 C p. 650-655
6 p.
artikel
539 Creep measurement and choice of creep laws for BGA assemblies' reliability simulation Pin, S.
2018
100-101 C p. 1172-1176
artikel
540 Cross-sectional nanoprobing fault isolation technique on submicron devices Tan, P.K.
2016
100-101 C p. 321-325
5 p.
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541 Cross-sectional nanoprobing sample preparation on sub-micron device with fast laser grooving technique Tan, P.K.
2018
100-101 C p. 309-314
artikel
542 Crosstalk aware transient error correction coding technique for NoC links Vinodhini, M.

100-101 C p.
artikel
543 Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT Jabbari, I.

100-101 C p.
artikel
544 CSME: A novel cycle-sensing margin enhancement scheme for high yield STT-MRAM Cai, H.

100-101 C p.
artikel
545 CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss Nakamura, Katsumi

100-101 C p.
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546 Current imaging, EBIC/EBAC, and electrical probing combined for fast and reliable in situ electrical fault isolation Kleindiek, Stephan
2016
100-101 C p. 313-316
4 p.
artikel
547 Current induced degradation study on state of the art DUV LEDs Trivellin, N.
2018
100-101 C p. 868-872
artikel
548 Current similarity based open-circuit fault diagnosis for induction motor drives with discrete wavelet transform Wu, Feng
2017
100-101 C p. 309-316
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549 Cu-SiO2 hybrid bonding simulation including surface roughness and viscoplastic material modeling: A critical comparison of 2D and 3D modeling approach Wlanis, Thomas
2018
100-101 C p. 1-9
artikel
550 Cycle life and statistical predictive reliability model for all-solid-state thin film microbatteries Grillon, Nathanaël
2019
100-101 C p. 102-108
artikel
551 Cycle life estimation of lithium-ion polymer batteries using artificial neural network and support vector machine with time-resolved thermography Zhou, Xunfei
2017
100-101 C p. 48-58
11 p.
artikel
552 Cyclic robustness of heavy wire bonds: Al, AlMg, Cu and CucorAl Czerny, B.
2018
100-101 C p. 745-751
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553 Damage based PoF model of solder joints under temperature cycling and electric coupling condition Yuan, Jiaxin

100-101 C p.
artikel
554 Damage effects on low noise amplifiers with microwave pulses Zhang, Cunbo
2016
100-101 C p. 41-47
7 p.
artikel
555 1D and Q2D thermal resistance analysis of micro channel structure and flat plate heat pipe Chen, Shao-Wen
2017
100-101 C p. 103-114
12 p.
artikel
556 Data-driven hybrid remaining useful life estimation approach for spacecraft lithium-ion battery Song, Yuchen
2017
100-101 C p. 142-153
artikel
557 DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors Hasegawa, K.
2018
100-101 C p. 115-118
artikel
558 DC-side faults mechanism analysis and causes location for two-stage photovoltaic grid connected inverters Ma, Mingyao

100-101 C p.
artikel
559 Deep learning-based image analysis framework for hardware assurance of digital integrated circuits Lin, Tong

100-101 C p.
artikel
560 Deep neural networks-based rolling bearing fault diagnosis Chen, Zhiqiang
2017
100-101 C p. 327-333
artikel
561 Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs Sasikumar, A.
2016
100-101 C p. 37-44
8 p.
artikel
562 Defect inspection of flip chip solder joints based on non-destructive methods: A review Su, Lei

100-101 C p.
artikel
563 Defect inspection of solder bumps using the scanning acoustic microscopy and fuzzy SVM algorithm Fan, Mengying
2016
100-101 C p. 192-197
6 p.
artikel
564 Degradation and recovery of variability due to BTI Schlünder, Christian
2016
100-101 C p. 179-184
6 p.
artikel
565 Degradation assessment of 1.2-kV SiC MOSFETs and comparative study with 1.2-kV Si IGBTs under power cycling Chen, Yuan

100-101 C p.
artikel
566 Degradation behavior and mechanism of polymer films for high-ohmic resistor protection in a heat and humid environment Wang, X.Y.
2016
100-101 C p. 79-85
7 p.
artikel
567 Degradation characteristics of SiC power devices for DC circuit breaker by repetitive unclamped inductive switching test Sagara, Mitsuhiko

100-101 C p.
artikel
568 Degradation estimation using feature increment stepwise linear regression for PWM Inverter of Electro-Mechanical Actuator Peng, Y.
2018
100-101 C p. 514-518
artikel
569 Degradation indicators of power-GaN-HEMT under switching power-cycling González-Sentís, M.A.

100-101 C p.
artikel
570 Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs Dai, Lihua
2017
100-101 C p. 74-80
7 p.
artikel
571 Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress Tang, Yidan
2019
100-101 C p.
artikel
572 Degradation in super-junction MOSFET under successive exposure of heavy ion strike and gamma ray irradiation Li, Xinyu

100-101 C p.
artikel
573 Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons Gao, Z.

100-101 C p.
artikel
574 Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements Piva, F.

100-101 C p.
artikel
575 Degradation mechanisms of AlGaN/GaN HEMTs under 800MeV Bi ions irradiation Lei, Z.F.
2018
100-101 C p. 312-316
artikel
576 Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits Buffolo, M.
2018
100-101 C p. 855-858
artikel
577 Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate Zenari, M.

100-101 C p.
artikel
578 Degradation modeling for reliability estimation of DC film capacitors subject to humidity acceleration Zhao, Shuai

100-101 C p.
artikel
579 Degradation modeling with spatial mapping method in low temperature poly silicon thin film transistor aged off-state bias Kim, Kihwan

100-101 C p.
artikel
580 Degradation of adhesion between Cu and epoxy-based dielectric during exposure to hot humid environments Ahn, Key-one
2017
100-101 C p. 1-10
10 p.
artikel
581 Degradation of AIIIBV/Ge triple junction solar cells irradiated by gamma-rays, electrons and neutrons Ryabtseva, M.V.

100-101 C p.
artikel
582 Degradation of AlInAs/InGaAs/InP quantum cascade lasers due to electrode adhesion failure Pierścińska, D.
2019
100-101 C p. 113-118
artikel
583 Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography Usui, Masanori
2016
100-101 C p. 152-158
7 p.
artikel
584 Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation Petrov, A.S.

100-101 C p.
artikel
585 Degradation of GaN-on-GaN vertical diodes submitted to high current stress Fabris, E.
2018
100-101 C p. 568-571
artikel
586 Degradation of InGaN-based LEDs related to charge diffusion and build-up La Grassa, M.
2016
100-101 C p. 614-616
3 p.
artikel
587 Degradation of InGaN-based MQW solar cells under 405nm laser excitation De Santi, C.
2017
100-101 C p. 575-578
artikel
588 Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes De Santi, C.
2016
100-101 C p. 623-626
4 p.
artikel
589 Degradation of pMOSFETs due to hot electron induced punchthrough Son, Donghee
2016
100-101 C p. 13-17
5 p.
artikel
590 Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments Ruzzarin, M.
2018
100-101 C p. 620-626
artikel
591 Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress Wang, Lihao

100-101 C p.
artikel
592 Degradation study of single poly radiation sensors by monitoring charge trapping Pikhay, Evgeny
2016
100-101 C p. 18-25
8 p.
artikel
593 Degraded power MOSFET effects on Class-A power amplifier: Modelling studies considering feedback Meydanci, Mehmet Akif

100-101 C p.
artikel
594 Delamination of bonding Interface between benzocyclobutene (BCB) and silicon dioxide/silicon nitride Bu, Fan
2016
100-101 C p. 225-233
9 p.
artikel
595 Delamination of polyimide/Cu films under mixed mode loading Walter, T.
2016
100-101 C p. 281-286
6 p.
artikel
596 Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability Gallardo, Jethro Oroceo

100-101 C p.
artikel
597 Deriving lifetime predictions for wire bonds at high temperatures Hook, M.D.
2018
100-101 C p. 1124-1129
artikel
598 Design and automation of electrical cable harnesses testing system Khouri, Paige Mary Pamela

100-101 C p.
artikel
599 Design and development of MEMS-based structures for in-situ characterization of thermo-mechanical behaviour of thin metal films Saghaeian, F.
2018
100-101 C p. 829-834
artikel
600 Design and implementation of reliable flash ADC for microwave applications Prathiba, G.
2018
100-101 C p. 91-97
artikel
601 Design and optimization of LDMOS-SCR devices with improved ESD protection performance Liang, Hailian
2016
100-101 C p. 115-119
5 p.
artikel
602 Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system Yu, Jian

100-101 C p.
artikel
603 Design considerations for the mechanical integrity of airgaps in nano-interconnects under chip–package interaction; a numerical investigation Zahedmanesh, Houman
2016
100-101 C p. 102-107
6 p.
artikel
604 Design, evaluation and fault-tolerance analysis of stochastic FIR filters Wang, Ran
2016
100-101 C p. 111-127
17 p.
artikel
605 Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications Aguiar, Y.Q.

100-101 C p.
artikel
606 Design for reliability of generic sensor interface circuits Heinssen, Sascha
2018
100-101 C p. 184-197
artikel
607 Design for reliability: Tradeoffs between lifetime and performance due to electromigration Wolff, Francis

100-101 C p.
artikel
608 Design for Small Delay Test - A Simulation Study Kampmann, Matthias
2018
100-101 C p. 124-133
artikel
609 Design guideline on board-level thermomechanical reliability of 2.5D package Shao, Shuai

100-101 C p.
artikel
610 Design, manufacture and test for reliable 3D printed electronics packaging Tilford, Tim
2018
100-101 C p. 109-117
artikel
611 Design methodology for over-temperature and over-current protection of an LDO voltage regulator by using electro-thermal simulations Plesa, Cosmin-Sorin
2017
100-101 C p. 509-516
8 p.
artikel
612 Design of analog nonlinear transformations based on a Gilbert multiplier for energy detection Vauche, R.

100-101 C p.
artikel
613 Design of approximate-TMR using approximate library and heuristic approaches Albandes, I.
2018
100-101 C p. 898-902
artikel
614 Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology Sharbati, Samaneh

100-101 C p.
artikel
615 Design of 2.4-GHz T/R switch with embedded ESD protection devices in CMOS process Lin, Chun-Yu
2017
100-101 C p. 258-266
9 p.
artikel
616 Design of low power, variation tolerant single bitline 9T SRAM cell in 16-nm technology in subthreshold region Roy, Chandramauleshwar

100-101 C p.
artikel
617 Design optimization of a miniaturized thermoelectric generator via parametric model order reduction Yuan, Chengdong

100-101 C p.
artikel
618 Design optimization of multi-resonant piezoelectric energy harvesters Hu, Siyang

100-101 C p.
artikel
619 Destruction analyses of power supplies due to electric pulse Mejecaze, G.

100-101 C p.
artikel
620 Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy Brand, S.
2016
100-101 C p. 341-345
5 p.
artikel
621 Detection and identification of power switch failures for fault-tolerant operation of flying capacitor Buck-boost converters Tang, Sai
2018
100-101 C p. 1236-1241
artikel
622 Detection of cracks in multilayer ceramic capacitors by X-ray imaging Andersson, C.
2016
100-101 C p. 352-356
5 p.
artikel
623 Detection of failure mechanisms in 24–40 nm FinFETs with (spectral) photon emission techniques using InGaAs camera Vogt, I.
2018
100-101 C p. 334-338
artikel
624 Determination of current transport and trap states density in AlInGaN/GaN heterostructures Arslan, Engin

100-101 C p.
artikel
625 Determination of DC equivalent hot carrier stress times in scaled CMOS devices using novel AC stress methodology Kerber, Andreas
2019
100-101 C p. 98-101
artikel
626 Determination of doping type by calibrated capacitance scanning microwave microscopy Hommel, S.
2017
100-101 C p. 218-221
artikel
627 Determination of safe reliability region over temperature and current density for through wafer vias Whitman, Charles S.
2017
100-101 C p. 5-12
8 p.
artikel
628 Determining adhesion of critical interfaces in microelectronics – A reverse Finite Element Modelling approach based on nanoindentation Reuther, G.M.

100-101 C p.
artikel
629 Developed non-destructive verification methods for accelerated temperature cycling of power MOSFETs Jang, You-Cheol

100-101 C p.
artikel
630 Developing a Simplified Analytical Thermal Model of Multi-chip Power Module Bouguezzi, Sihem
2016
100-101 C p. 64-77
14 p.
artikel
631 Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40nm floating gate embedded-flash memory Dobri, Adam
2017
100-101 C p. 47-51
5 p.
artikel
632 Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules Ortiz Gonzalez, J.
2016
100-101 C p. 434-439
6 p.
artikel
633 Development of a capacitive sensing technology for the measurement of perpendicularity in the narrow, deep slot-walls of micromolds Chen, Shun-Tong
2018
100-101 C p. 216-222
artikel
634 Development of a cycle counting algorithm with temporal parameters Twomey, James M.

100-101 C p.
artikel
635 Development of a lifetime prediction model for lithium thionyl chloride batteries based on an accelerated degradation test Cheng, Sijie
2016
100-101 C p. 274-279
6 p.
artikel
636 Development of fast short-circuit protection system for advanced IGBT Ichiki, M.

100-101 C p.
artikel
637 Development of high-strength and superior thermal shock-resistant GaN/DBA die attach structure with Ag sinter joining by thick Ni metallization Kim, D.

100-101 C p.
artikel
638 Development of low temperature CuCu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC) Hu, Han-Wen

100-101 C p.
artikel
639 Development of numerical algorithm to guide solder joint structure and component structural design during manufacturing Chen, Yilong
2017
100-101 C p. 134-142
9 p.
artikel
640 Development of solderable layer on power MOSFET for double-side bonding Kim, Dajung

100-101 C p.
artikel
641 Development of thermal shock-resistant of GaN/DBC die-attached module by using Ag sinter paste and thermal stress relaxation structure Kim, Dongjin
2018
100-101 C p. 779-787
artikel
642 Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra Vogt, I.
2018
100-101 C p. 11-15
artikel
643 Device instability of amorphous InGaZnO thin film transistors with transparent source and drain Kim, Sang Min
2016
100-101 C p. 575-579
5 p.
artikel
644 Device performances and instabilities of channel engineered amorphous InGaZnO thin film transistors Lee, Jun Hyeong

100-101 C p.
artikel
645 Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies Kerber, A.
2016
100-101 C p. 145-151
7 p.
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646 3D Flash Memories Gan, Chong Leong
2016
100-101 C p. 327-328
2 p.
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647 D flip-flop based TRNG with zero hardware cost for IoT security applications Khan, Sajid

100-101 C p.
artikel
648 Diagnosis of a soft short and local variations of parameters occurring simultaneously in analog CMOS circuits Tadeusiewicz, Michał
2017
100-101 C p. 90-97
8 p.
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649 Diagnosis of open-phase fault of five-phase permanent magnet synchronous motor by harmonic current analysis Li, Tianxing

100-101 C p.
artikel
650 Diagnostic-driven yield engineering under atypical wafer foundry conditions Ngow, Y.T.

100-101 C p.
artikel
651 Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules Luo, Haoze
2017
100-101 C p. 415-419
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652 Dielectric charging induced drift in micro device reliability-a review Zhou, Wu
2016
100-101 C p. 1-9
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653 Dielectric charging phenomena in diamond films used in RF MEMS capacitive switches: The effect of film thickness Koutsoureli, M.
2016
100-101 C p. 660-664
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654 Dielectric investigation of In4Se96-xSx semiconductor: Relaxation and conduction mechanism Ganaie, Mohsin

100-101 C p.
artikel
655 Direct observation of changes in the effective minority-carrier lifetime of SiN x -passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests Nishikawa, Naoyuki
2017
100-101 C p. 91-95
5 p.
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656 Direct power control of three-level NPC grid-connected system combined with fault-tolerant technology Yang, Guoliang
2018
100-101 C p. 1057-1062
artikel
657 DIRT latch: A novel low cost double node upset tolerant latch Eftaxiopoulos, Nikolaos
2017
100-101 C p. 57-68
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658 Discharge current analysis with charged connector pins Tamminen, Pasi

100-101 C p.
artikel
659 Disclosing AlN ceramic substrate process failure mode and effect analysis Hung, Shiu-Wan

100-101 C p.
artikel
660 Discovering and reducing defects in MIM capacitors Roesch, William J.
2018
100-101 C p. 299-305
artikel
661 Discrete phase method particle simulation of ultra-fine package assembly with SAC305-TiO2 nano-reinforced lead free solder at different weighted percentages Haslinda, M.S.
2017
100-101 C p. 336-351
16 p.
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662 Discrete phase method study of ball grid array underfill process using nano-silica filler-reinforced composite-encapsulant with varying filler loadings Ng, Fei Chong
2017
100-101 C p. 45-64
20 p.
artikel
663 Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds Gholamirad, Maryam
2018
100-101 C p. 210-217
artikel
664 DLBF: A low overhead wear leveling algorithm for embedded systems with hybrid memory Niu, Na

100-101 C p.
artikel
665 DMR+: An efficient alternative to TMR to protect registers in Xilinx FPGAs Reviriego, P.
2016
100-101 C p. 314-318
5 p.
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666 Double-node-upset aware SRAM bit-cell for aerospace applications Prasad, Govind

100-101 C p.
artikel
667 Double parallel barrier height behavior of Au/Poly (linoleic acid)-g-poly (methyl methacrylate) (PLiMMA)/n-Si structure Gökçen, Muharrem
2019
100-101 C p. 132-136
artikel
668 Double tricrystal nucleation behavior in Pb-free BGA solder joints Han, Jing
2019
100-101 C p. 1-9
artikel
669 Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket Wang, Ping
2016
100-101 C p. 30-36
7 p.
artikel
670 Drain current model for short-channel triple gate junctionless nanowire transistors Paz, B.C.
2016
100-101 C p. 1-10
10 p.
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671 DRES: Data recovery for condition monitoring to enhance system reliability Liu, Liansheng
2016
100-101 C p. 125-129
5 p.
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672 Drop-shock reliability improvement of embedded chip resistor packages through via structure modification Park, Se-Hoon
2016
100-101 C p. 194-200
7 p.
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673 3-D thermal models calibration by parametric dynamic compact thermal models Codecasa, Lorenzo
2017
100-101 C p. 371-379
9 p.
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674 Dual-axis rotary platform with UAV image recognition and tracking Sheu, Bor-Horng
2019
100-101 C p. 8-17
artikel
675 Dual-Core Lockstep enhanced with redundant multithread support and control-flow error detection Peña-Fernández, M.

100-101 C p.
artikel
676 Dual-resonance concurrent oscillator Jang, Sheng-Lyang
2018
100-101 C p. 208-215
artikel
677 Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries Sasaki, Akito
2017
100-101 C p. 86-90
5 p.
artikel
678 Dynamic characterization of SiC and GaN devices with BTI stresses Ortiz Gonzalez, J.

100-101 C p.
artikel
679 Dynamic EFI and circuit analysis case studies on integrated circuit buried via void defects Thor, M.H.

100-101 C p.
artikel
680 Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis Oliveira, A.

100-101 C p.
artikel
681 Dynamic optical beam induced current variation mapping: A fault isolation technique Thor, M.H.

100-101 C p.
artikel
682 Dynamic pull-in and pull-out analysis of viscoelastic nanoplates under electrostatic and Casimir forces via sinusoidal shear deformation theory Shokravi, M.
2017
100-101 C p. 17-28
12 p.
artikel
683 Dynamic resistance variation mapping technique for defect isolation Thor, M.H.

100-101 C p.
artikel
684 Early degradation of high power packaged LEDs under humid conditions and its recovery — Myth of reliability rejuvenation Singh, Preetpal
2016
100-101 C p. 145-153
9 p.
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685 Early detection and prediction of HKMG SRAM HTOL performance by WLR PBTI tests Chien, Wei-Ting Kary
2016
100-101 C p. 185-188
4 p.
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686 Early detection of photovoltaic system inverter faults Omaña, Martin

100-101 C p.
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687 Early life field failures in modern automotive electronics – An overview; root causes and precautions Jacob, P.
2016
100-101 C p. 79-83
5 p.
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688 Early SEU sensitivity assessment for collaborative hardening techniques: A case study of OPTOS processing architecture Martín-Ortega, Alberto
2019
100-101 C p. 36-47
artikel
689 Economical design of H-bridge multilevel inverter drive controlled by modified fast algorithm Mohammed, Jamal Abdul-Kareem
2016
100-101 C p. 89-97
9 p.
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690 Editorial Ersland, Peter
2017
100-101 C p. 1-
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691 Editorial Asenov, Asen
2016
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692 Editorial Ciappa, Mauro
2018
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693 Editorial 2018
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694 Editorial Board 2016
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765 Editorial: ESREF 2016 Petzold, Matthias
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766 Editorial: IEDMS 2016 Liu, Chuan-Hsi
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767 Editorial: IPFA 2018 Chin, Jiann Min
2019
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768 Editorial of 31st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2020) Papaioannou, George

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769 Effective and combined stressors from multi-dimensional mission profiles for semiconductor reliability Hirler, A.

100-101 C p.
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770 Effective decapsulation of copper wire-bonded microelectronic devices for reliability assessment Manoharan, Subramani
2018
100-101 C p. 197-207
artikel
771 Effectiveness of a hardware-based approach to detect resistive-open defects in SRAM cells under process variations Gomez, A.F.
2016
100-101 C p. 150-158
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772 Effective (Pd,Ni)Sn4 diffusion barrier to suppress brittle fracture at Sn-58Bi-xAg solder joint with Ni(P)/Pd(P)/Au metallization pad Kim, Jungsoo

100-101 C p.
artikel
773 Effective scan chain failure analysis method Auvray, Etienne
2017
100-101 C p. 201-213
artikel
774 Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices Yamaguchi, Shimpei
2017
100-101 C p. 80-84
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775 Effect of aging on mechanical properties of high temperature Pb-rich solder joints Khatibi, G.
2018
100-101 C p. 1-11
artikel
776 Effect of aging time and loading rate on fracture behavior of Cu/Sn-0.7Cu solder joints Sharma, Ved Prakash

100-101 C p.
artikel
777 Effect of alternating current (AC) stressing on the microstructure and mechanical properties of low-silver content solder interconnect Zhu, Ze
2019
100-101 C p. 12-19
artikel
778 Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs Chiu, Hsien-Chin
2017
100-101 C p. 267-271
5 p.
artikel
779 Effect of cell size reduction on the threshold voltage of UMOSFETs Baba, Yoshiro

100-101 C p.
artikel
780 Effect of Co content on the microstructure, spreadability, conductivity and corrosion resistance of Sn-0.7Cu alloy Fan, Jianglei

100-101 C p.
artikel
781 Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays Lee, Chang-Chun
2018
100-101 C p. 230-234
artikel
782 Effect of copper over-pad metallization on reliability of aluminum wire bonds Kawashiro, Fumiyoshi
2019
100-101 C p. 168-176
artikel
783 Effect of critical properties of epoxy molding compound on warpage prediction: A critical review Phansalkar, Sukrut Prashant

100-101 C p.
artikel
784 Effect of DC/AC stress on the reliability of cell capacitor in DRAM Kim, Gang-Jun
2018
100-101 C p. 179-182
artikel
785 Effect of electrification and chlorination on the microstructure and electrical properties of fine Al wires Wu, Bo-Ding

100-101 C p.
artikel
786 Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies Habeenzu, Brilliant

100-101 C p.
artikel
787 Effect of ENEPIG metallization for solid-state gold-gold diffusion bonds Pun, Kelvin P.L.
2017
100-101 C p. 339-348
10 p.
artikel
788 Effect of fin shape of tapered FinFETs on the device performance in 5-nm node CMOS technology Kurniawan, Erry Dwi
2018
100-101 C p. 254-259
artikel
789 Effect of H/Ar treatment on ZnO:B transparent conducting oxide for flexible a-Si:H/μc-Si:H photovoltaic modules under damp heat stress Jeong, Jae-Seong
2016
100-101 C p. 640-645
6 p.
artikel
790 Effect of HfSiON thickness on electron trap distributions of HfSiON/SiO2 nMOSFET under PBTI Roh, Giyoun

100-101 C p.
artikel
791 Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET Bai, Kun

100-101 C p.
artikel
792 Effect of high current pulses on solder interfacial reaction and interconnect reliability Mei, J.

100-101 C p.
artikel
793 Effect of high-temperature storage on the thermal conductivity of Cu nanoparticles/Bi-Sn hybrid bonding Usui, Masanori

100-101 C p.
artikel
794 Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses Chihani, Omar
2018
100-101 C p. 402-405
artikel
795 Effect of indentation depth and strain rate on mechanical properties of Sn0.3Ag0.7Cu Niu, Xiaoyan

100-101 C p.
artikel
796 Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode Casu, C.

100-101 C p.
artikel
797 Effect of integrated anneal optimizations of electroplated Cu thin films interconnects Wahab, Y.A.

100-101 C p.
artikel
798 Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics Hlali, Slah
2017
100-101 C p. 154-161
artikel
799 Effect of intermetallic compound thickness on mechanical fatigue properties of copper pillar micro-bumps Zhu, Wenhui

100-101 C p.
artikel
800 Effect of intrinsic PCB parameters on the performance of fluoropolymer coating under condensing humidity conditions Mantis, Ioannis

100-101 C p.
artikel
801 Effect of Joule heating on the reliability of solder joints under power cycling conditions Mei, J.
2018
100-101 C p. 684-690
artikel
802 Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors Lei, Y.M.
2018
100-101 C p. 248-252
artikel
803 Effect of micromorphology on corrosion and mechanical properties of SAC305 lead-free solders Chen, G.

100-101 C p.
artikel
804 Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget Hong, Eun-Ki
2018
100-101 C p. 306-311
artikel
805 Effect of mounting fixture on the drop reliability of solid state drive Jeong, In Jun

100-101 C p.
artikel
806 Effect of nano-Al2O3 reinforcement on the microstructure and reliability of Sn–3.0Ag–0.5Cu solder joints Zhao, Zhenyu
2016
100-101 C p. 126-134
9 p.
artikel
807 Effect of negative potential on the extent of PID degradation in photovoltaic power plant in a real operation mode Hylský, Josef
2018
100-101 C p. 12-18
artikel
808 Effect of 805nm on reliability of 735/805/850-nm LED involved near-infrared spectroscopy biomedical device Zhao, Yue
2017
100-101 C p. 406-410
5 p.
artikel
809 Effect of normal forces on fretting corrosion of tin-coated electrical contacts Han, Dong-Woon
2017
100-101 C p. 321-327
7 p.
artikel
810 Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM Kim, Jongkyun
2018
100-101 C p. 183-185
artikel
811 Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET Yun, Yeohyeok

100-101 C p.
artikel
812 Effect of oxygen vacancy in tungsten oxide on the photocatalytic activity for decomposition of organic materials in the gas phase Fukushi, Daisuke
2017
100-101 C p. 1-4
4 p.
artikel
813 Effect of PCB cracks on thermal cycling reliability of passive microelectronic components with single-grained solder joints Akbari, Saeed
2019
100-101 C p. 61-71
artikel
814 Effect of plasma treatment on adhesion strength and moisture absorption characteristics between epoxy molding compound/silicon chip (EMC/chip) interface Oh, Gyung-Hwan
2019
100-101 C p. 63-72
artikel
815 Effect of polyol synthesis on sintering of microsized Ag particles Yeom, Jeyun

100-101 C p.
artikel
816 Effect of potting materials on LED bulb's driver temperature Nguyen, Nam
2018
100-101 C p. 77-81
artikel
817 Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices Elharizi, M.
2018
100-101 C p. 671-676
artikel
818 Effect of protons located at different region in SiO2 layer on GLPNP transistors degradation Yang, Jianqun

100-101 C p.
artikel
819 Effect of pulse-reverse plating on copper: Thermal mechanical properties and microstructure relationship Huang, Bau-Chin
2019
100-101 C p. 71-77
artikel
820 Effect of roughness on electrical contact performance of electronic components Liu, Xin-long
2017
100-101 C p. 100-109
10 p.
artikel
821 Effect of selectively passivated layer on foldable low temperature polycrystalline silicon thin film transistor characteristics under dynamic mechanical stress Lee, Sang Myung
2017
100-101 C p. 606-609
artikel
822 Effect of shear and tensile-dominant cyclic loading on failure in SnAgCu solder Kuczynska, M.

100-101 C p.
artikel
823 Effect of short circuit aging on safe operating area of SiC MOSFET Nguyen, Tien Anh
2018
100-101 C p. 645-651
artikel
824 Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis Du, H.

100-101 C p.
artikel
825 Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs Reigosa, Paula Diaz
2018
100-101 C p. 577-583
artikel
826 Effect of solder bump shapes on underfill flow in flip-chip encapsulation using analytical, numerical and PIV experimental approaches Ng, Fei Chong
2018
100-101 C p. 41-63
artikel
827 Effect of solder joint size and composition on liquid-assisted healing Siroky, Georg

100-101 C p.
artikel
828 Effect of solder material thickness on Power MOSFET reliability by Electro-thermo-Mechanical Simulations Cavallaro, D.
2018
100-101 C p. 1168-1171
artikel
829 Effect of solder resist dissolution on the joint reliability of ENIG surface and Sn–Ag–Cu solder Lee, Hyunju
2018
100-101 C p. 75-80
artikel
830 Effect of surface potential distribution on corrosion behavior of Cu/Al interface in Cu wire bonding applications Mokhtari, Omid

100-101 C p.
artikel
831 Effect of temperature and humidity conditioning on copper leadframe/mold compound interfacial delamination Kwatra, Abhishek

100-101 C p.
artikel
832 Effect of temperature and humidity on moisture diffusion in an epoxy moulding compound material Jansen, K.M.B.

100-101 C p.
artikel
833 Effect of thermal and vibrational combined ageing on QFN terminal pads solder reliability Arabi, F.

100-101 C p.
artikel
834 Effect of thermocapillary action in the underfill encapsulation of multi-stack ball grid array Ng, Fei Chong
2016
100-101 C p. 143-160
18 p.
artikel
835 Effect of thermo-mechanical ageing on materials and interface properties in flexible microelectronic devices Chapel, Anthony

100-101 C p.
artikel
836 Effect of TID electronradiation on SiGe BiCMOS LNAs at V-band Sagouo Minko, Flavien

100-101 C p.
artikel
837 Effect of TiO2 additions on Sn-0.7Cu-0.05Ni lead-free composite solder Ramli, M.I.I.
2016
100-101 C p. 255-264
10 p.
artikel
838 Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors Fleury, Clément

100-101 C p.
artikel
839 Effect of type of thermo-mechanical excursion on growth of interfacial intermetallic compounds in Cu/Sn-Ag-Cu solder joints Ghosh, Rituparna
2017
100-101 C p. 44-51
8 p.
artikel
840 Effect of voids on thermomechanical cracking in lead-free Sn3Ag0.5Cu interconnections of power modules Hagberg, Juha

100-101 C p.
artikel
841 Effect of voids on thermo-mechanical reliability of chip resistor solder joints: Experiment, modelling and simulation Wild, P.
2018
100-101 C p. 163-175
artikel
842 Effects of acrylic adhesives property and optimized bonding parameters on Sn58Bi solder joint morphology for flex-on-board assembly Zhang, Shuye
2017
100-101 C p. 181-189
9 p.
artikel
843 Effects of Ag addition and Ag3Sn formation on the mechanical reliability of Ni/Sn solder joints Chu, Kunmo
2017
100-101 C p. 53-58
artikel
844 Effects of ageing on the conducted immunity of a voltage reference: Experimental study and modelling approach Hairoud-Airieau, S.
2017
100-101 C p. 674-679
artikel
845 Effects of alloying elements in high reliability copper wire bond material for high temperature applications Eto, M.

100-101 C p.
artikel
846 Effects of anisotropy on the reliability of TSV microstructure Fan, Zhengwei

100-101 C p.
artikel
847 Effects of bismuth additions on mechanical property and microstructure of SAC-Bi solder joint under current stressing Hu, Siou-Han

100-101 C p.
artikel
848 Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures Peng, Zhaoyang
2016
100-101 C p. 192-196
5 p.
artikel
849 Effects of dimension parameters and defect on TSV thermal behavior for 3D IC packaging Pan, Yuanxing
2017
100-101 C p. 97-102
6 p.
artikel
850 Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode Divay, A.
2016
100-101 C p. 585-588
4 p.
artikel
851 Effects of electric field and bias voltage on corrosion behavior of tin under a thin electrolyte layer Huang, Hualiang
2017
100-101 C p. 131-142
12 p.
artikel
852 Effects of electrode materials on the device performances and instabilities in amorphous InGaZnO thin film transistors Choi, Jong Won

100-101 C p.
artikel
853 Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes Zumuukhorol, Munkhsaikhan
2017
100-101 C p. 60-65
6 p.
artikel
854 Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors Gao, Y.

100-101 C p.
artikel
855 Effects of Ga alloying on microstructure and comprehensive performances of Sn–9Zn–2Bi alloys for the microelectronics industry Peng, Yanzhi

100-101 C p.
artikel
856 Effects of gamma radiation on suspended silicon nanogauges bridge used for MEMS transduction Janioud, P.

100-101 C p.
artikel
857 Effects of HPEM stress on GaAs low-noise amplifier from circuit to component scale Girard, M.
2018
100-101 C p. 914-919
artikel
858 Effects of interfacial bonding strength on the formation of conductive anodic filament in polyphenylene oxide/glass fiber laminates Wang, Zhongwei

100-101 C p.
artikel
859 Effects of isothermal storage on grain structure of Cu/Sn/Cu microbump interconnects for 3D stacking Panchenko, Iuliana
2019
100-101 C p.
artikel
860 Effects of multi-cracks and thermal-mechanical coupled load on the TSV reliability Fan, Zhengwei

100-101 C p.
artikel
861 Effects of nooks configuration on hydrothermal performance of zigzag channels for nanofluid-cooled microelectronic heat sink Khoshvaght-Aliabadi, M.
2017
100-101 C p. 153-165
13 p.
artikel
862 Effects of oxidation on reliability of screen-printed silver circuits for radio frequency applications Kim, Dae Up
2016
100-101 C p. 120-124
5 p.
artikel
863 Effects of power cycling test condition and test strategy on lifetime estimation of power modules in power electronic systems Choi, U.M.

100-101 C p.
artikel
864 Effects of rare earth Ce addition on the microstructure and shear property of Cu/In-50Ag/Cu composite solder joint Yang, Li

100-101 C p.
artikel
865 Effects of residual stresses on cracking and delamination risks of an avionics MEMS pressure sensor Auersperg, J.
2016
100-101 C p. 665-668
4 p.
artikel
866 Effects of salt spray test on lead-free solder alloy Guédon-Gracia, A.
2016
100-101 C p. 242-247
6 p.
artikel
867 Effects of silver nano-particles and nano-wires on properties of electrically conductive adhesives Liu, Hao

100-101 C p.
artikel
868 Effects of SiO2 film thickness and operating temperature on thermally-induced failures in through-silicon-via structures Han, Chang-Fu
2018
100-101 C p. 1-13
artikel
869 Effects of solder degradation on the die temperature measurement via internal gate resistance Kawahara, C.

100-101 C p.
artikel
870 Effects of stair case gate bias stress in IGZO/Al2O3 flexible TFTs Buonomo, M.
2018
100-101 C p. 882-886
artikel
871 Effects of stress-loading test methods on the degradation of light-emitting diode modules Cai, Miao
2016
100-101 C p. 635-639
5 p.
artikel
872 Effects of sulfur addition on the wettability and corrosion resistance of Sn-0.7Cu lead-free solder Huang, Huizhen
2017
100-101 C p. 15-21
7 p.
artikel
873 Effects of temperature and span amplitude on fretting corrosion behavior of tin-plated electrical contacts Kim, Min-Jung
2017
100-101 C p. 80-87
8 p.
artikel
874 Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors Park, Hee Pyung
2018
100-101 C p. 873-877
artikel
875 Effects of thermal aging on Cu nanoparticle/Bi-Sn solder hybrid bonding Usui, M.
2017
100-101 C p. 93-99
7 p.
artikel
876 Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack Feng, Xuan
2016
100-101 C p. 78-81
4 p.
artikel
877 Effects of thermal neutron radiation on a hardware-implemented machine learning algorithm Garay Trindade, M.

100-101 C p.
artikel
878 Effects of TID radiation on P+ ion-implanted HVNMOS devices Zhiqiang, Xiao

100-101 C p.
artikel
879 Effects of total ionizing dose on single event effect sensitivity of FRAMs Ji, Qinggang
2019
100-101 C p. 1-7
artikel
880 Effects of twin grain boundaries on the subgrain rotation of the solder joint during thermal shock Tan, Shihai
2017
100-101 C p. 126-133
8 p.
artikel
881 Effects of voltage stress on the single event upset (SEU) response of 65nm flip flop Chua, C.T.
2016
100-101 C p. 199-203
5 p.
artikel
882 Efficiency droop in green InGaN/GaN light emitting diodes: Degradation mechanisms and initial characteristics Herzog, Alexander

100-101 C p.
artikel
883 Efficient reliability evaluation methodologies for combinational circuits Cai, Hao
2016
100-101 C p. 19-25
7 p.
artikel
884 Efficient state of health estimation of Li-ion battery under several ageing types for aeronautic applications Zhang, Yuan Ci
2018
100-101 C p. 1231-1235
artikel
885 E-field induced keep-out zone determination method of through-silicon vias for 3-D ICs Kim, Kibeom
2019
100-101 C p. 161-164
artikel
886 ELDRS in SiGe transistors for room and low-temperature irradiation Pershenkov, V.S.
2016
100-101 C p. 56-59
4 p.
artikel
887 Electrical analysis on implantation-related defect by nanoprobing methodology Chen, C.Q.
2016
100-101 C p. 317-320
4 p.
artikel
888 Electrical and cyclic bending properties of screen-printed conductive patterns containing different ratios of silver microparticles and silver microflakes Maeda, Kazuki

100-101 C p.
artikel
889 Electrical and thermal failure modes of 600V p-gate GaN HEMTs Oeder, Thorsten
2017
100-101 C p. 321-326
artikel
890 Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending Park, Chang Bum
2016
100-101 C p. 37-43
7 p.
artikel
891 Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300°C) Petrosyants, Konstantin O.
2017
100-101 C p. 416-425
10 p.
artikel
892 Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture Cornigli, D.
2018
100-101 C p. 752-755
artikel
893 Electrical characterization of SiC MOS capacitors: A critical review Pande, Peyush

100-101 C p.
artikel
894 Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices Lin, Hong-Zhi
2016
100-101 C p. 60-63
4 p.
artikel
895 Electrical duality design for the radon-222 decay chain Ahmadi, Mohammad

100-101 C p.
artikel
896 Electrically induced physical damage (EIPD) cases study: From electrical overstress (EOS) to product defects Wu, Chunlei
2018
100-101 C p. 203-207
artikel
897 Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact Bertoncello, Matteo

100-101 C p.
artikel
898 Electrical overstress effect characterization on Power MOS Trenchfet and correlation with time dependent dielectric breakdown Mazza, B.

100-101 C p.
artikel
899 Electrical properties of carbon nanotube via interconnects for 30nm linewidth and beyond Vyas, Anshul A.
2016
100-101 C p. 35-42
8 p.
artikel
900 Electrical properties of SiNx films with embedded CNTs for MEMS capacitive switches Koutsoureli, M.
2017
100-101 C p. 614-618
artikel
901 Electrochemical corrosion and electrochemical migration of 64Sn-35Bi-1Ag solder doping with xGe on printed circuit boards Hua, L.
2017
100-101 C p. 27-36
artikel
902 Electrochemical studies of Pd-doped Cu and Pd-doped Cu-Al intermetallics for understanding corrosion behavior in wire-bonding packages Wu, Yuelin
2017
100-101 C p. 355-361
7 p.
artikel
903 Electromagnetic susceptibility characterization of double SOI device Li, B.
2016
100-101 C p. 168-171
4 p.
artikel
904 Electromechanical reliability of a flexible metal-grid transparent electrode prepared by electrohydrodynamic (EHD) jet printing Yang, Sang Min
2016
100-101 C p. 151-159
9 p.
artikel
905 Electromigration in solder joints: A cross-sectioned model system for real-time observation AbdelAziz, Mostafa

100-101 C p.
artikel
906 Electron-beam-induced current (EBIC) imaging technique to quicken polysilicon defect localization in MOSFETs Zheng, Shijun

100-101 C p.
artikel
907 Electronic module for the thermal monitoring of a Li-ion battery cell through the electrochemical impedance estimation Ranieri, Marco
2017
100-101 C p. 410-415
6 p.
artikel
908 Electronics reliability assessment of future power fusion machines: Neutron interaction analysis in bulk silicon Autran, J.L.

100-101 C p.
artikel
909 Electron trapping effects in SiC Schottky diodes: Review and comment Nicholls, Jordan R.

100-101 C p.
artikel
910 Electroplated Ni-P film for power devices without cracks induced by high temperature heating Fujimori, Yuji

100-101 C p.
artikel
911 Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors Simicic, Marko

100-101 C p.
artikel
912 Electro-thermal coupling and performance estimation of LEDs at system level Meng, Haotian

100-101 C p.
artikel
913 Electro thermal modeling of the power diode using Pspice Hanini, Wasma
2018
100-101 C p. 82-91
artikel
914 Electro-thermal simulation of current sharing in silicon and silicon carbide power modules under short circuit condition of types I and II Suzuki, Hiroshi
2016
100-101 C p. 12-16
5 p.
artikel
915 Elemental characterisation of sub 20nm structures in devices using new SEM-EDS technology Sagar, J.T.
2016
100-101 C p. 367-369
3 p.
artikel
916 EMA remaining useful life prediction with weighted bagging GPR algorithm Zhang, Yujie
2017
100-101 C p. 253-263
artikel
917 Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement Ghorbani, Hamidreza
2018
100-101 C p. 230-240
artikel
918 Embed SRAM IDDOFF fail root cause identification by combination of device analysis and localized circuit analysis Chen, C.Q.
2017
100-101 C p. 261-266
artikel
919 Empirical derivation of upper and lower bounds of NBTI aging for embedded cores Chen, Yukai
2018
100-101 C p. 294-305
artikel
920 Emulation-based fault analysis on RFID tags for robustness and security evaluation Mezzah, Ibrahim
2017
100-101 C p. 115-125
11 p.
artikel
921 Enabling robust automotive electronic components in advanced CMOS nodes Huard, V.
2017
100-101 C p. 13-24
artikel
922 End of life and acceleration modelling for power diodes under high temperature reverse bias stress Schilling, O.
2016
100-101 C p. 458-463
6 p.
artikel
923 Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC Tran, Hiep
2017
100-101 C p. 82-85
4 p.
artikel
924 Energy based modeling for temperature cycling induced tin silver copper solder interconnect fatigue life Chen, Deng Yun

100-101 C p.
artikel
925 Energy-Delay-FIT Product to compare processors and algorithm implementations Fratin, V.
2018
100-101 C p. 112-120
artikel
926 Engineering application research on reliability prediction of the combined DC-DC power supply He, Yuchen

100-101 C p.
artikel
927 Enhanced architectures for soft error detection and correction in combinational and sequential circuits Krstić, Miloš
2016
100-101 C p. 212-220
9 p.
artikel
928 Enhanced Cu pillar design to reduce thermomechanical stress induced during flip chip assembly Lofrano, Melina
2018
100-101 C p. 97-105
artikel
929 Enhanced multiple-error resilient carry look-ahead adders through new customized fault-tolerant voters Valinataj, Mojtaba
2019
100-101 C p. 7-20
artikel
930 Enhanced thermal characterization method of microscale heatsink structures Takács, G.
2016
100-101 C p. 21-28
artikel
931 Enhancement of light-emitting diode reliability using silicone microsphere in encapsulant Jang, Inseok
2016
100-101 C p. 94-98
artikel
932 Enhancing die level static fault isolation on power gated devices Nagalingam, D.

100-101 C p.
artikel
933 Enhancing reliability of photovoltaic power electronic converters under dynamic irradiance conditions Jacobo Tapia, Renato

100-101 C p.
artikel
934 Enhancing the ductility and mechanical behavior of Sn-1.0Ag-0.5Cu lead-free solder by adding trace amount of elements Ni and Sb Hammad, A.E.
2018
100-101 C p. 133-141
artikel
935 Enhancing the microstructure and tensile creep resistance of Sn-3.0Ag-0.5Cu solder alloy by reinforcing nano-sized ZnO particles Hammad, A.E.
2017
100-101 C p. 187-194
artikel
936 Enlarged tensile strain at edge of flexible substrate due to anticlastic curvature Jo, Woosung

100-101 C p.
artikel
937 Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation Boige, F.
2018
100-101 C p. 598-603
artikel
938 Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation Soelkner, Gerald
2016
100-101 C p. 39-50
12 p.
artikel
939 Envelop tracking based embedded current measurement for monitoring of IGBT and power converter system Bat-Ochir, Bat-Otgon
2018
100-101 C p. 500-504
artikel
940 Equivalent circuits for electromigration Najm, Farid N.

100-101 C p.
artikel
941 Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors Whiting, P.G.
2017
100-101 C p. 32-40
9 p.
artikel
942 Error sensitivity study of FFT architectures implemented in FPGA García-Astudillo, L.A.

100-101 C p.
artikel
943 ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping Canato, E.

100-101 C p.
artikel
944 ESD protection for negative charge pump (CP) using CP internal switches Srivastava, Ankit
2016
100-101 C p. 59-63
5 p.
artikel
945 ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications Dong, Aihua
2017
100-101 C p. 201-205
5 p.
artikel
946 ESD tests on 850nm GaAs-based VCSELs Vanzi, M.
2016
100-101 C p. 617-622
6 p.
artikel
947 ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier Hasegawa, K.
2018
100-101 C p. 433-437
artikel
948 ESREF 2019 General Chair Nolhier, Nicolas

100-101 C p.
artikel
949 Estimating dynamic power consumption for memristor-based CiM architecture Traiola, Marcello
2018
100-101 C p. 241-248
artikel
950 Estimating the SEU failure rate of designs implemented in FPGAs in presence of MCUs Villalta, Igor
2017
100-101 C p. 85-92
8 p.
artikel
951 Estimating the Single-Event Upset sensitivity of a memory array using simulation Raine, Mélanie
2017
100-101 C p. 349-354
6 p.
artikel
952 Evaluating IGBT temperature evolution during short circuit operations using a TSEP-based method Ceccarelli, L.

100-101 C p.
artikel
953 Evaluating reliability through soft error triggered exceptions at ARM Cortex-A9 microprocessor Aviles, Pablo M.

100-101 C p.
artikel
954 Evaluating softcore GPU in SRAM-based FPGA under radiation-induced effects Braga, Giani

100-101 C p.
artikel
955 Evaluating the material properties of underfill for a reliable 3D TSV integration package using numerical analysis Yoon, Hyungseok
2017
100-101 C p. 41-50
10 p.
artikel
956 Evaluating the moisture resistance of Y3Al5O12: Ce3+ phosphor used in high power white LED packaging Yuan, Weiyi

100-101 C p.
artikel
957 Evaluating the reliability of a GPU pipeline to SEU and the impacts of software-based and hardware-based fault tolerance techniques Gonçalves, Marcio
2018
100-101 C p. 931-935
artikel
958 Evaluating the soft error sensitivity of a GPU-based SoC for matrix multiplication León, Germán

100-101 C p.
artikel
959 Evaluation and modeling of adhesion layer in shock-protection structure for MEMS accelerometer Yamane, Daisuke
2016
100-101 C p. 78-84
7 p.
artikel
960 Evaluation based on performance and failure of PV system in 10 years field-aged 1 MW PV power plant Oh, Wonwook

100-101 C p.
artikel
961 Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability Hirler, A.
2017
100-101 C p. 38-41
artikel
962 Evaluation of health and safety of mechanically fatigued rechargeable lithium polymer batteries for flexible electronics applications Kim, J.Y.

100-101 C p.
artikel
963 Evaluation of heavy-ion impact in bulk and FDSOI devices under ZTC condition Calienes, W.E.
2017
100-101 C p. 655-659
artikel
964 Evaluation of hybrid bonding technology of single-micron pitch with planar structure for 3D interconnection Ohyama, Masaki
2016
100-101 C p. 134-139
6 p.
artikel
965 Evaluation of ISO 26262 and IEC 61508 metrics for transient faults of a multi-processor system-on-chip through radiation testing Ballan, Oscar

100-101 C p.
artikel
966 Evaluation of potential-induced degradation in crystalline Si solar cells using Na fault injection Oh, Wonwook
2016
100-101 C p. 646-649
4 p.
artikel
967 Evaluation of radiation-induced soft error in majority voters designed in 7nm FinFET technology de Aguiar, Y.Q.
2017
100-101 C p. 660-664
artikel
968 Evaluation of screen printed silver trace performance and long-term reliability against environmental stress on a low surface energy substrate Mikkonen, Riikka
2018
100-101 C p. 54-65
artikel
969 Evaluation of SiC MOSFET power modules under unclamped inductive switching test environment Nawaz, Muhammad
2016
100-101 C p. 97-103
7 p.
artikel
970 Evaluation of the corrosion performance of Cu–Al intermetallic compounds and the effect of Pd addition Lim, Adeline B.Y.
2016
100-101 C p. 155-161
7 p.
artikel
971 Evaluation of the impact of the physical dimensions and material of the semiconductor chip on the reliability of Sn3.5Ag solder interconnect in power electronic module: A finite element analysis perspective Rajaguru, P.
2017
100-101 C p. 77-85
9 p.
artikel
972 Evaluation of the relationship between stress and lifetime of Pb-free solder joints subjected to vibration load using a generalized local stress approach Thambi, J.

100-101 C p.
artikel
973 Evaluation of thermal conductivity for sintered silver considering aging effect with microstructure based model Qin, Fei

100-101 C p.
artikel
974 Evaluation of thermomechanical fatigue lifetime of BGA lead-free solder joints and impact of isothermal aging Roumanille, Pierre

100-101 C p.
artikel
975 Evaluation of variability using Schmitt trigger on full adders layout Moraes, L.B.
2018
100-101 C p. 116-121
artikel
976 Evaluation of via density and low-k Young's modulus influence on mechanical performance of advanced node multi-level Back-End-Of-Line Ključar, Luka
2016
100-101 C p. 93-100
8 p.
artikel
977 Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN Arehart, A.R.
2016
100-101 C p. 45-48
4 p.
artikel
978 Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests Fu, J.Z.
2018
100-101 C p. 652-655
artikel
979 Evolution of microstructure of Lead free cu/Sn solders and copper oxide phase precipitation in Cu3Sn intermetallic during thermal cycling Bettahi, Yousra
2019
100-101 C p. 20-26
artikel
980 Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests Belaïd, M.A.
2016
100-101 C p. 93-97
5 p.
artikel
981 Experimental analysis of Sn-3.0Ag-0.5Cu solder joint board-level drop/vibration impact failure models after thermal/isothermal cycling Gu, Jian
2018
100-101 C p. 29-36
artikel
982 Experimental analysis of the electromagnetic instruction skip fault model and consequences for software countermeasures Dutertre, Jean-Max

100-101 C p.
artikel
983 Experimental analysis on estimating junction temperature and service life of high power LED array A., Rammohan

100-101 C p.
artikel
984 Experimental and modeling studies of automotive-qualified OLEDs under electrical stress Güney, Arda

100-101 C p.
artikel
985 Experimental and modeling study on viscosity of encapsulant for electronic packaging Shan, Xiuyang
2018
100-101 C p. 42-46
artikel
986 Experimental and numerical investigation of circular minichannel heat sinks with various hydraulic diameter for electronic cooling application Ghasemi, Seyed Ebrahim
2017
100-101 C p. 97-105
9 p.
artikel
987 Experimental and numerical investigation of flow and thermal effects on flexible printed circuit board Lim, C.H.
2017
100-101 C p. 5-17
13 p.
artikel
988 Experimental and numerical study of 3D stacked dies under forced air cooling and water immersion cooling Qiu, Delong
2017
100-101 C p. 34-43
10 p.
artikel
989 Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices Yu, Qingkui
2018
100-101 C p. 952-956
artikel
990 Experimental and simulative study of warpage behavior for fan-out wafer-level packaging van Dijk, Marius

100-101 C p.
artikel
991 Experimental characterization of critical high-electric field spots in power semiconductors by planar and scanning collimated alpha sources Ciappa, Mauro
2018
100-101 C p. 476-481
artikel
992 Experimental characterization of rolled annealed copper film used in flexible printed circuit boards: Identification of the elastic-plastic and low-cycle fatigue behaviors Girard, Gautier

100-101 C p.
artikel
993 Experimental characterization of the predictive thermal behaviour model of a surface-mounted soft magnetic composite inductor Monier-Vinard, Eric
2016
100-101 C p. 54-63
artikel
994 Experimental determination of critical adhesion energies with the Advanced Button Shear Test Pflügler, Nadine
2019
100-101 C p. 177-185
artikel
995 Experimental determination of fatigue behavior of lead free solder joints in microelectronic packaging subjected to isothermal aging Mustafa, Muhannad
2016
100-101 C p. 136-147
12 p.
artikel
996 Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs Jankovic, Nebojsa D.
2016
100-101 C p. 26-29
4 p.
artikel
997 Experimental identification and prioritization of design and process parameters on hole fill in mini wave soldering Seidel, Reinhardt

100-101 C p.
artikel
998 Experimental identification of LED compact thermal model element values Janicki, Marcin
2018
100-101 C p. 20-26
artikel
999 Experimental identification of thermal induced warpage in polymer–metal composite films Li, Heng
2016
100-101 C p. 141-147
7 p.
artikel
1000 Experimental investigation of a Peltier cells cooling system for a Switch-Mode Power Supply Casano, G.
2017
100-101 C p. 426-432
7 p.
artikel
                             2509 gevonden resultaten
 
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