| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1001 |
The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics
|
Lloyd, J.R.
|
|
2006
|
100-101 |
9-11 |
p. 1643-1647
5 p.
|
artikel
|
| 1002 |
The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module
|
Park, N.C.
|
|
2013
|
100-101 |
9-11 |
p. 1818-1822
5 p.
|
artikel
|
| 1003 |
The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module
|
Kim, T.H.
|
|
2013
|
100-101 |
9-11 |
p. 1823-1827
5 p.
|
artikel
|
| 1004 |
The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS
|
Zhang, Yun-An
|
|
2013
|
100-101 |
9-11 |
p. 1672-1675
4 p.
|
artikel
|
| 1005 |
The Failure Analysis of High Voltage Tolerance IO Buffer under ESD
|
|
|
2004
|
100-101 |
9-11 |
p. 1805-1810
6 p.
|
artikel
|
| 1006 |
The FMEDA approach to improve the safety assessment according to the IEC61508
|
Catelani, M.
|
|
2010
|
100-101 |
9-11 |
p. 1230-1235
6 p.
|
artikel
|
| 1007 |
The high frequency behaviour of high voltage and current IGBT modules
|
Abbate, C.
|
|
2006
|
100-101 |
9-11 |
p. 1848-1853
6 p.
|
artikel
|
| 1008 |
The IEEE standards on reliability program and reliability prediction methods for electronic equipment
|
Pechta , Michael
|
|
2002
|
100-101 |
9-11 |
p. 1259-1266
8 p.
|
artikel
|
| 1009 |
The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness
|
|
|
2004
|
100-101 |
9-11 |
p. 1817-1822
6 p.
|
artikel
|
| 1010 |
The impact of static and dynamic degradation on SOI “smart-cut” floating body MOSFETs
|
Exarchos, M.A.
|
|
2005
|
100-101 |
9-11 |
p. 1386-1389
4 p.
|
artikel
|
| 1011 |
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress
|
Sowariraj, M.S.B.
|
|
2002
|
100-101 |
9-11 |
p. 1287-1292
6 p.
|
artikel
|
| 1012 |
The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation
|
Kim, Dong Wook
|
|
2010
|
100-101 |
9-11 |
p. 1316-1319
4 p.
|
artikel
|
| 1013 |
The Reliability of New Generation Power MOSFETs in Radiation Environment
|
Velardia , F.
|
|
2002
|
100-101 |
9-11 |
p. 1629-1634
6 p.
|
artikel
|
| 1014 |
The right way to assess electronic system reliability: FIDES
|
Charpenel, P.
|
|
2003
|
100-101 |
9-11 |
p. 1401-1404
4 p.
|
artikel
|
| 1015 |
Thermal ageing induces drastic changes on mechanical and damage behavior of Sn3.0Ag0.5Cu alloy
|
Dompierre, B.
|
|
2010
|
100-101 |
9-11 |
p. 1661-1665
5 p.
|
artikel
|
| 1016 |
Thermal aging model of InP/InGaAs/InP DHBT
|
Ghosh, S.
|
|
2010
|
100-101 |
9-11 |
p. 1554-1558
5 p.
|
artikel
|
| 1017 |
Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping
|
Bychikhin, S.
|
|
2007
|
100-101 |
9-11 |
p. 1649-1652
4 p.
|
artikel
|
| 1018 |
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells
|
Compagnin, Alessandro
|
|
2013
|
100-101 |
9-11 |
p. 1809-1813
5 p.
|
artikel
|
| 1019 |
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED
|
Cester, A.
|
|
2010
|
100-101 |
9-11 |
p. 1866-1870
5 p.
|
artikel
|
| 1020 |
Thermal and electrostatic reliability characterization in RF MEMS switches
|
Duong, Q.-H.
|
|
2005
|
100-101 |
9-11 |
p. 1790-1793
4 p.
|
artikel
|
| 1021 |
Thermal approach of defects generation on copper/organic dielectric interface due to SEM inspections
|
de Morais, L. Dantas
|
|
2007
|
100-101 |
9-11 |
p. 1614-1618
5 p.
|
artikel
|
| 1022 |
Thermal characterization and modeling of power hybrid converters for distributed power systems
|
Cova, P.
|
|
2006
|
100-101 |
9-11 |
p. 1760-1765
6 p.
|
artikel
|
| 1023 |
Thermal characterizations of Cu nanoparticle joints for power semiconductor devices
|
Ishizaki, T.
|
|
2013
|
100-101 |
9-11 |
p. 1543-1547
5 p.
|
artikel
|
| 1024 |
Thermal cycling impacts on supercapacitor performances during calendar ageing
|
Ayadi, M.
|
|
2013
|
100-101 |
9-11 |
p. 1628-1631
4 p.
|
artikel
|
| 1025 |
Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications
|
Lhommeau, T.
|
|
2007
|
100-101 |
9-11 |
p. 1779-1783
5 p.
|
artikel
|
| 1026 |
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system
|
Haberfehlner, G.
|
|
2009
|
100-101 |
9-11 |
p. 1346-1351
6 p.
|
artikel
|
| 1027 |
Thermal impedance spectroscopy of power modules
|
Hensler, A.
|
|
2011
|
100-101 |
9-11 |
p. 1679-1683
5 p.
|
artikel
|
| 1028 |
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs
|
Abbate, C.
|
|
2013
|
100-101 |
9-11 |
p. 1481-1485
5 p.
|
artikel
|
| 1029 |
Thermally Induced Voltage Alteration (TIVA) applied to ESD induced failures
|
Lucarelli, N.
|
|
2003
|
100-101 |
9-11 |
p. 1699-1704
6 p.
|
artikel
|
| 1030 |
Thermal–mechanical behavior of the bonding wire for a power module subjected to the power cycling test
|
Hung, T.Y.
|
|
2011
|
100-101 |
9-11 |
p. 1819-1823
5 p.
|
artikel
|
| 1031 |
Thermal modeling of planar transformer for switching power converters
|
Bernardoni, M.
|
|
2010
|
100-101 |
9-11 |
p. 1778-1782
5 p.
|
artikel
|
| 1032 |
Thermal optimization of GaN-on-Si HEMTs with plastic package
|
Liu, R.
|
|
2011
|
100-101 |
9-11 |
p. 1788-1791
4 p.
|
artikel
|
| 1033 |
Thermal optimization of water heat sink for power converters with tight thermal constraints
|
Cova, P.
|
|
2013
|
100-101 |
9-11 |
p. 1760-1765
6 p.
|
artikel
|
| 1034 |
Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs)
|
Bari, D.
|
|
2011
|
100-101 |
9-11 |
p. 1762-1766
5 p.
|
artikel
|
| 1035 |
The robustness of series-connected high power IGBT modules
|
Abbate, C.
|
|
2007
|
100-101 |
9-11 |
p. 1746-1750
5 p.
|
artikel
|
| 1036 |
The role of the optical trans-characteristics in laser diode analysis
|
Mura, G.
|
|
2013
|
100-101 |
9-11 |
p. 1538-1542
5 p.
|
artikel
|
| 1037 |
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure
|
|
|
2004
|
100-101 |
9-11 |
p. 1407-1411
5 p.
|
artikel
|
| 1038 |
The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis
|
Yew, M.C.
|
|
2006
|
100-101 |
9-11 |
p. 1874-1879
6 p.
|
artikel
|
| 1039 |
Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method
|
Ramsay, E.
|
|
2007
|
100-101 |
9-11 |
p. 1534-1538
5 p.
|
artikel
|
| 1040 |
Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress
|
Stojadinović, N.
|
|
2010
|
100-101 |
9-11 |
p. 1278-1282
5 p.
|
artikel
|
| 1041 |
Threshold voltage instability in high-k based flash memories
|
Rao, Rosario
|
|
2010
|
100-101 |
9-11 |
p. 1273-1277
5 p.
|
artikel
|
| 1042 |
Through Silicon Via (TSV) defect investigations using lateral emission microscopy
|
Cassidy, C.
|
|
2010
|
100-101 |
9-11 |
p. 1413-1416
4 p.
|
artikel
|
| 1043 |
Time dependent dielectric breakdown in a low-k interlevel dielectric
|
|
|
2004
|
100-101 |
9-11 |
p. 1861-1865
5 p.
|
artikel
|
| 1044 |
Time gating imaging through thick silicon substrate: a new step towards backside characterisation
|
Rampnoux, J.M.
|
|
2006
|
100-101 |
9-11 |
p. 1520-1524
5 p.
|
artikel
|
| 1045 |
Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations
|
Pugatschow, A.
|
|
2007
|
100-101 |
9-11 |
p. 1529-1533
5 p.
|
artikel
|
| 1046 |
Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis
|
Bascoul, G.
|
|
2011
|
100-101 |
9-11 |
p. 1640-1645
6 p.
|
artikel
|
| 1047 |
Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation
|
Douin, A.
|
|
2006
|
100-101 |
9-11 |
p. 1514-1519
6 p.
|
artikel
|
| 1048 |
Time Resolved Photoemission (PICA) – From the Physics to Practical Considerations
|
Remmach, M.
|
|
2003
|
100-101 |
9-11 |
p. 1639-1644
6 p.
|
artikel
|
| 1049 |
Time Resolved Photon Emission Processing Flow for IC Analysis
|
|
|
2004
|
100-101 |
9-11 |
p. 1655-1662
8 p.
|
artikel
|
| 1050 |
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65nm technology platform
|
Tazzoli, A.
|
|
2010
|
100-101 |
9-11 |
p. 1373-1378
6 p.
|
artikel
|
| 1051 |
Tiny-scale “stealth” current sensor to probe power semiconductor device failure
|
Kasho, Yuya
|
|
2011
|
100-101 |
9-11 |
p. 1689-1692
4 p.
|
artikel
|
| 1052 |
TLP Characterization of large gate width devices
|
Coppens, P.
|
|
2007
|
100-101 |
9-11 |
p. 1462-1467
6 p.
|
artikel
|
| 1053 |
Torsion test applied for reballing and solder paste volume evaluation
|
Maia Filho, W.C.
|
|
2007
|
100-101 |
9-11 |
p. 1663-1667
5 p.
|
artikel
|
| 1054 |
Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour
|
Tala-Ighil, B.
|
|
2011
|
100-101 |
9-11 |
p. 2010-2014
5 p.
|
artikel
|
| 1055 |
Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model
|
Guetarni, K.
|
|
2013
|
100-101 |
9-11 |
p. 1293-1299
7 p.
|
artikel
|
| 1056 |
Transient-induced latch-up test setup for wafer-level and package-level
|
Bonfert, D.
|
|
2006
|
100-101 |
9-11 |
p. 1629-1633
5 p.
|
artikel
|
| 1057 |
Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress
|
|
|
2004
|
100-101 |
9-11 |
p. 1687-1692
6 p.
|
artikel
|
| 1058 |
Transistor network restructuring against NBTI degradation
|
Butzen, Paulo F.
|
|
2010
|
100-101 |
9-11 |
p. 1298-1303
6 p.
|
artikel
|
| 1059 |
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale
|
Lanza, M.
|
|
2009
|
100-101 |
9-11 |
p. 1188-1191
4 p.
|
artikel
|
| 1060 |
Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions
|
Benmansour, A.
|
|
2007
|
100-101 |
9-11 |
p. 1730-1734
5 p.
|
artikel
|
| 1061 |
Trench insulated gate bipolar transistors submitted to high temperature bias stress
|
Maïga, C.O.
|
|
2005
|
100-101 |
9-11 |
p. 1728-1731
4 p.
|
artikel
|
| 1062 |
Trend of CMOS downsizing and its reliability
|
Iwaia , H.
|
|
2002
|
100-101 |
9-11 |
p. 1251-1258
8 p.
|
artikel
|
| 1063 |
Trends and challenges to ESD and Latch-up designs for nanometer CMOS technologies
|
Boselli, G.
|
|
2005
|
100-101 |
9-11 |
p. 1406-1414
9 p.
|
artikel
|
| 1064 |
Trends in automotive power semiconductor packaging
|
Dietrich, Peter
|
|
2013
|
100-101 |
9-11 |
p. 1681-1686
6 p.
|
artikel
|
| 1065 |
Trends in Failure Analysis
|
Wagner, Lawrence C.
|
|
2003
|
100-101 |
9-11 |
p. 1369-1375
7 p.
|
artikel
|
| 1066 |
Triple junction InGaP/InGaAs/Ge solar cells for high concentration photovoltaics application: Degradation tests of solar receivers
|
Padovani, S.
|
|
2010
|
100-101 |
9-11 |
p. 1894-1898
5 p.
|
artikel
|
| 1067 |
True constant temperature MTF test system for the characterization of electromigration of thick Cu interconnection lines
|
Scandurra, G.
|
|
2002
|
100-101 |
9-11 |
p. 1347-1351
5 p.
|
artikel
|
| 1068 |
Tunnel oxide degradation under pulsed stress
|
Ghidini, G.
|
|
2005
|
100-101 |
9-11 |
p. 1337-1342
6 p.
|
artikel
|
| 1069 |
Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast
|
Buzzo, M.
|
|
2005
|
100-101 |
9-11 |
p. 1499-1504
6 p.
|
artikel
|
| 1070 |
Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology
|
Boukhenoufa, A.
|
|
2007
|
100-101 |
9-11 |
p. 1419-1423
5 p.
|
artikel
|
| 1071 |
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements
|
Lanza, M.
|
|
2010
|
100-101 |
9-11 |
p. 1312-1315
4 p.
|
artikel
|
| 1072 |
Ultra-fast CAD scan chain highlighting for failure analysis assistance
|
Grützner, M.
|
|
2010
|
100-101 |
9-11 |
p. 1494-1498
5 p.
|
artikel
|
| 1073 |
Understanding the effects of NIR laser stimulation on NMOS transistor
|
|
|
2004
|
100-101 |
9-11 |
p. 1675-1680
6 p.
|
artikel
|
| 1074 |
Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation
|
Belmehdi, Y.
|
|
2009
|
100-101 |
9-11 |
p. 1398-1403
6 p.
|
artikel
|
| 1075 |
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation
|
Gerrer, L.
|
|
2010
|
100-101 |
9-11 |
p. 1259-1262
4 p.
|
artikel
|
| 1076 |
Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications
|
Ilgünsatiroglu, Emre
|
|
2013
|
100-101 |
9-11 |
p. 1381-1386
6 p.
|
artikel
|
| 1077 |
Use of signal processing imaging for the study of a 3D package in harsh environment
|
Augereau, Jean
|
|
2006
|
100-101 |
9-11 |
p. 1922-1925
4 p.
|
artikel
|
| 1078 |
Using error tolerance of target application for efficient reliability improvement of digital circuits
|
dos Santos, G.G.
|
|
2010
|
100-101 |
9-11 |
p. 1219-1222
4 p.
|
artikel
|
| 1079 |
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes
|
de Santi, C.
|
|
2013
|
100-101 |
9-11 |
p. 1534-1537
4 p.
|
artikel
|
| 1080 |
VCO phase noise improvement through direct passive component modification in the FIB
|
|
|
2004
|
100-101 |
9-11 |
p. 1589-1592
4 p.
|
artikel
|
| 1081 |
Vibration lifetime modelling of PCB assemblies using steinberg model
|
Dehbi, A.
|
|
2005
|
100-101 |
9-11 |
p. 1658-1661
4 p.
|
artikel
|
| 1082 |
Virtual reliability assessment of integrated power switches based on multi-domain simulation approach
|
Solomalala, P.
|
|
2007
|
100-101 |
9-11 |
p. 1343-1348
6 p.
|
artikel
|
| 1083 |
VLSI functional analysis by dynamic emission microscopy
|
Perdu, Philippe
|
|
2010
|
100-101 |
9-11 |
p. 1431-1435
5 p.
|
artikel
|
| 1084 |
1300V, 2ms pulse inductive load switching test circuit with 20ns selectable crowbar intervention
|
Rossi, Lucio
|
|
2009
|
100-101 |
9-11 |
p. 1386-1390
5 p.
|
artikel
|
| 1085 |
Voltage stress-induced hot carrier effects on SiGe HBT VCO
|
Yu, Chuanzhao
|
|
2005
|
100-101 |
9-11 |
p. 1402-1405
4 p.
|
artikel
|
| 1086 |
Warpage analysis of layered structures connected by direct brazing
|
Asada, T.
|
|
2011
|
100-101 |
9-11 |
p. 1836-1839
4 p.
|
artikel
|
| 1087 |
Warpage variations of Si/solder/OFHC-Cu layered plates subjected to cyclic thermal loading
|
Tanie, Hisashi
|
|
2011
|
100-101 |
9-11 |
p. 1840-1844
5 p.
|
artikel
|
| 1088 |
Wearout estimation using the Robustness Validation methodology for components in 150°C ambient automotive applications
|
Lecuyer, P.
|
|
2010
|
100-101 |
9-11 |
p. 1744-1749
6 p.
|
artikel
|
| 1089 |
Whisker mitigation measures for Sn-plated Cu for different stress tests
|
Sauter, L.
|
|
2010
|
100-101 |
9-11 |
p. 1631-1635
5 p.
|
artikel
|
| 1090 |
Wide band gap semiconductor reliability : Status and trends
|
Delage, S.L.
|
|
2003
|
100-101 |
9-11 |
p. 1705-1712
8 p.
|
artikel
|
| 1091 |
Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects
|
Fu, C.M.
|
|
2010
|
100-101 |
9-11 |
p. 1332-1335
4 p.
|
artikel
|
| 1092 |
XEBIC at the Dual Beam
|
Vanzi, M.
|
|
2013
|
100-101 |
9-11 |
p. 1399-1402
4 p.
|
artikel
|
| 1093 |
Yield Evaluation of Gold Sensor Electrodes Used for Fully Electronic DNA Detection Arrays on CMOS
|
Frey, A.
|
|
2002
|
100-101 |
9-11 |
p. 1801-1806
6 p.
|
artikel
|
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