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                             1093 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A bottom-up approach for System-On-Chip reliability Huard, V.
2011
100-101 9-11 p. 1425-1439
15 p.
artikel
2 A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits 2004
100-101 9-11 p. 1885-1890
6 p.
artikel
3 A case study of defects due to process marginalities in deep sub-micron technology Lin, Hung-Sung
2007
100-101 9-11 p. 1604-1608
5 p.
artikel
4 A case study of ESD failures at random levels: analysis, explanation and solution 2004
100-101 9-11 p. 1823-1827
5 p.
artikel
5 Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application Dupont, L.
2009
100-101 9-11 p. 1375-1380
6 p.
artikel
6 Accelerated life test of high power white light emitting diodes based on package failure mechanisms Chan, S.I.
2011
100-101 9-11 p. 1806-1809
4 p.
artikel
7 Accelerated lifetime test of RF-MEMS switches under ESD stress Ruan, J.
2009
100-101 9-11 p. 1256-1259
4 p.
artikel
8 Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide Inani, Anand
2007
100-101 9-11 p. 1429-1433
5 p.
artikel
9 Access resistor modelling for EEPROM’s retention test vehicle Canet, P.
2013
100-101 9-11 p. 1218-1223
6 p.
artikel
10 Accurate extraction of the mechanical properties of thin films by nanoindentation for the design of reliable MEMS Sasaki, Yuji
2010
100-101 9-11 p. 1621-1625
5 p.
artikel
11 A compact model for early electromigration failures of copper dual-damascene interconnects de Orio, R.L.
2011
100-101 9-11 p. 1573-1577
5 p.
artikel
12 A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors Jang, Hyun Jun
2013
100-101 9-11 p. 1814-1817
4 p.
artikel
13 A complete methodology for assessing GaN behaviour for military applications Moreau, C.
2010
100-101 9-11 p. 1587-1592
6 p.
artikel
14 A complete RF power technology assessment for military applications Moreau, C.
2006
100-101 9-11 p. 1817-1822
6 p.
artikel
15 A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories Pic, D.
2007
100-101 9-11 p. 1373-1377
5 p.
artikel
16 Acoustic analysis of an assembly: Structural identification by signal processing (wavelets) Augereau, J.
2002
100-101 9-11 p. 1517-1522
6 p.
artikel
17 Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits Chen, Shih-Hung
2007
100-101 9-11 p. 1502-1505
4 p.
artikel
18 A Custom-designed automatic measurement system for acquisition and management of reliability data Catelani, M.
2002
100-101 9-11 p. 1381-1384
4 p.
artikel
19 A 3D analysis technique for detecting trace metal contamination Goto, Yasunori
2006
100-101 9-11 p. 1542-1547
6 p.
artikel
20 A 3-D Circuit Model to evaluate CDM performance of ICs Sowariraj, M.S.B.
2005
100-101 9-11 p. 1425-1429
5 p.
artikel
21 Addressing the challenges in solder resistance measurement for electromigration test Tan, Y.C.
2010
100-101 9-11 p. 1352-1354
3 p.
artikel
22 A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits Wolf, Heinrich
2005
100-101 9-11 p. 1421-1424
4 p.
artikel
23 A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs Ben Dhia, A.
2013
100-101 9-11 p. 1189-1193
5 p.
artikel
24 Adhesive die attach for power application: Performance and reliability in plastic package Tiziani, R.
2002
100-101 9-11 p. 1611-1616
6 p.
artikel
25 A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress Dubec, V.
2003
100-101 9-11 p. 1557-1561
5 p.
artikel
26 Advanced backside failure analysis in 65nm CMOS technology Bianic, Stephane
2007
100-101 9-11 p. 1550-1554
5 p.
artikel
27 Advanced electrical analysis of embedded memory cells using atomic force probing Grützner, M.
2005
100-101 9-11 p. 1509-1513
5 p.
artikel
28 Advanced Local Lifetime Control for Higher Reliability of Power Devices Vobecký, J.
2003
100-101 9-11 p. 1883-1888
6 p.
artikel
29 Advanced packaging yields higher performance and reliability in power electronics Bayerer, Reinhold
2010
100-101 9-11 p. 1715-1719
5 p.
artikel
30 Advances in scanning SQUID microscopy for die-level and package-level fault isolation Knauss, L.A.
2003
100-101 9-11 p. 1657-1662
6 p.
artikel
31 Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec’s MCM-D discrete passives devices. Soussan, P.
2003
100-101 9-11 p. 1785-1790
6 p.
artikel
32 A fast moisture sensitivity level qualification method Ma, Xiaosong
2010
100-101 9-11 p. 1654-1660
7 p.
artikel
33 A fast test technique for life time estimation of ultrasonically welded Cu–Cu interconnects Czerny, B.
2010
100-101 9-11 p. 1641-1644
4 p.
artikel
34 AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis 2004
100-101 9-11 p. 1615-1619
5 p.
artikel
35 A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32nm node Bourgeat, J.
2011
100-101 9-11 p. 1614-1617
4 p.
artikel
36 Ageing effect on electromagnetic susceptibility of a phase locked loop Li, B.
2010
100-101 9-11 p. 1304-1308
5 p.
artikel
37 Ageing monitoring of lithium-ion cell during power cycling tests Eddahech, A.
2011
100-101 9-11 p. 1968-1971
4 p.
artikel
38 Ageing of SiC JFET transistors under repetitive current limitation conditions Bouarroudj-Berkani, M.
2010
100-101 9-11 p. 1532-1537
6 p.
artikel
39 Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural modelling: an experimental case study Mongellaz, B.
2003
100-101 9-11 p. 1513-1518
6 p.
artikel
40 A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications Sozza, A.
2005
100-101 9-11 p. 1617-1621
5 p.
artikel
41 A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications Latry, O.
2010
100-101 9-11 p. 1574-1576
3 p.
artikel
42 A laser-based instrument for measuring strain in electronic packages using coherent fibre-bundles 2004
100-101 9-11 p. 1693-1697
5 p.
artikel
43 AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements Sozza, A.
2006
100-101 9-11 p. 1725-1730
6 p.
artikel
44 A low-cost built-in error correction circuit design for STT-MRAM reliability improvement Kang, Wang
2013
100-101 9-11 p. 1224-1229
6 p.
artikel
45 A low energy FIB processing, repair, and test system Miura, Katsuyoshi
2003
100-101 9-11 p. 1627-1631
5 p.
artikel
46 Aluminum bond-wire properties after 1 billion mechanical cycles Lefranc, G.
2003
100-101 9-11 p. 1833-1838
6 p.
artikel
47 Ambipolar field-effect transistor based on α,ω-dihexylquaterthiophene and α,ω-diperfluoroquaterthiophene vertical heterojunction Generali, Gianluca
2010
100-101 9-11 p. 1861-1865
5 p.
artikel
48 A methodology to extract failure rates for low-k dielectric breakdown with multiple geometries and in the presence of die-to-die linewidth variation Bashir, Muhammad
2009
100-101 9-11 p. 1096-1102
7 p.
artikel
49 A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories Roca, M.
2009
100-101 9-11 p. 1070-1073
4 p.
artikel
50 A multi-disciplinary study of vibration based reliability of lead-free electronic interconnects Kamara, E.
2010
100-101 9-11 p. 1706-1710
5 p.
artikel
51 An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches Iannacci, J.
2011
100-101 9-11 p. 1869-1873
5 p.
artikel
52 An advanced quality and reliability assessment approach applied to thermal stress issues in electronic components and assemblies Hertl, Michael
2009
100-101 9-11 p. 1148-1152
5 p.
artikel
53 Analyses on NVM Circuitry Delay Induced by Source & Drain BF2 Implant Caprara, P.
2002
100-101 9-11 p. 1509-1511
3 p.
artikel
54 Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications Busatto, G.
2004
100-101 9-11 p. 1443-1448
6 p.
artikel
55 Analysis and Prevention on NC-ball induced ESD Damages in a 683-Pin BGA Packaged Chipset IC Lo, Wen-Yu
2003
100-101 9-11 p. 1583-1588
6 p.
artikel
56 Analysis of critical-length data from Electromigration failure studies Dwyer, V.M.
2011
100-101 9-11 p. 1568-1572
5 p.
artikel
57 Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations Faqir, M.
2010
100-101 9-11 p. 1520-1522
3 p.
artikel
58 Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics Molière, F.
2009
100-101 9-11 p. 1381-1385
5 p.
artikel
59 Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant Alvarez, D.
2006
100-101 9-11 p. 1597-1602
6 p.
artikel
60 Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices Goroll, Michael
2007
100-101 9-11 p. 1512-1516
5 p.
artikel
61 Analysis of etched cantilevers Enzler, A.
2002
100-101 9-11 p. 1807-1809
3 p.
artikel
62 Analysis of hot carrier effects in a 0.35μm high voltage n-channel LDMOS transistor Enichlmair, H.
2007
100-101 9-11 p. 1439-1443
5 p.
artikel
63 Analysis of humidity effects on the degradation of high-power white LEDs Tan, Cher Ming
2009
100-101 9-11 p. 1226-1230
5 p.
artikel
64 Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography Riccio, M.
2010
100-101 9-11 p. 1725-1730
6 p.
artikel
65 Analysis of PowerMOSFET chips failed in thermal instability 2004
100-101 9-11 p. 1419-1424
6 p.
artikel
66 Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress Brunel, L.
2013
100-101 9-11 p. 1450-1455
6 p.
artikel
67 Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditions El Brouji, H.
2009
100-101 9-11 p. 1391-1397
7 p.
artikel
68 Analysis of the effect of the gate oxide breakdown on SRAM stability Rodrı́guez, R.
2002
100-101 9-11 p. 1445-1448
4 p.
artikel
69 Analysis of the layout impact on electric fields in interconnect structures using finite element method 2004
100-101 9-11 p. 1867-1871
5 p.
artikel
70 Analysis of thermal expansion in elastic and elastoplastic layers subjected to cyclic thermal loading Wada, K.
2010
100-101 9-11 p. 1626-1630
5 p.
artikel
71 Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations d’Alessandro, Vincenzo
2013
100-101 9-11 p. 1713-1718
6 p.
artikel
72 Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up Heer, M.
2006
100-101 9-11 p. 1591-1596
6 p.
artikel
73 Analysis of ultracapacitors ageing in automotive application Catelani, M.
2013
100-101 9-11 p. 1676-1680
5 p.
artikel
74 Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions 2004
100-101 9-11 p. 1485-1490
6 p.
artikel
75 An analytical approach for physical modeling of hot-carrier induced degradation Tyaginov, S.
2011
100-101 9-11 p. 1525-1529
5 p.
artikel
76 An approach to statistical analysis of gate oxide breakdown mechanisms Tan, Cher Ming
2007
100-101 9-11 p. 1336-1342
7 p.
artikel
77 An automated lifetest equipment for optical emitters Giglio, M.
2002
100-101 9-11 p. 1311-1315
5 p.
artikel
78 An efficient tool for reliability improvement based on TMR Marques, E. Crespo
2010
100-101 9-11 p. 1247-1250
4 p.
artikel
79 A new approach to the modeling of oxide breakdown on CMOS circuits 2004
100-101 9-11 p. 1519-1522
4 p.
artikel
80 A new built-in screening methodology for Successive Approximation Register Analog to Digital Converters Malandruccolo, Vezio
2010
100-101 9-11 p. 1750-1757
8 p.
artikel
81 A new built-in screening methodology to achieve zero defects in the automotive environment Malandruccolo, Vezio
2009
100-101 9-11 p. 1334-1340
7 p.
artikel
82 A new high-voltage tolerant I/O for improving ESD robustness Jang, J.T.
2006
100-101 9-11 p. 1634-1637
4 p.
artikel
83 A new method for the analysis of high-resolution SILC data Aresu, S.
2003
100-101 9-11 p. 1483-1488
6 p.
artikel
84 A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages Auguste, Bahi Manoubi
2009
100-101 9-11 p. 1273-1277
5 p.
artikel
85 A new method to characterize the thermomechanical response of multilayered structures in power electronics Zimprich, P.
2006
100-101 9-11 p. 1844-1847
4 p.
artikel
86 A new method to quantify retention-failed cells of an EEPROM CAST Le Roux, C.
2007
100-101 9-11 p. 1609-1613
5 p.
artikel
87 A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy Stangoni, Maria
2003
100-101 9-11 p. 1651-1656
6 p.
artikel
88 A new structure to monitor electrical transients during programming of EEPROM memory cells 2004
100-101 9-11 p. 1745-1750
6 p.
artikel
89 A New sub-micro probing technique for failure analysis in integrated circuits Faure, D.
2002
100-101 9-11 p. 1767-1770
4 p.
artikel
90 A new technique for contactless current contrast imaging of high frequency signals Seifert, F.
2003
100-101 9-11 p. 1633-1638
6 p.
artikel
91 A new test methodology for an exhaustive study of single-event-effects on power MOSFETs Busatto, G.
2011
100-101 9-11 p. 1995-1998
4 p.
artikel
92 A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs Kikuchi, Takuo
2013
100-101 9-11 p. 1730-1734
5 p.
artikel
93 An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown Miranda, E.
2011
100-101 9-11 p. 1535-1539
5 p.
artikel
94 An improved isothermal electromigration test for Cu-damascene characterization 2004
100-101 9-11 p. 1855-1860
6 p.
artikel
95 An investigation into the reliability of power modules considering baseplate solders thermal fatigue in aeronautical applications Micol, A.
2009
100-101 9-11 p. 1370-1374
5 p.
artikel
96 A nonlinear degradation path dependent end-of-life estimation framework from noisy observations Cucu Laurenciu, N.
2013
100-101 9-11 p. 1213-1217
5 p.
artikel
97 An original DoE-based tool for silicon photodetectors EoL estimation in space environments Spezzigu, P.
2011
100-101 9-11 p. 1999-2003
5 p.
artikel
98 A novel accelerated test technique for assessment of mechanical reliability of solder interconnects Khatibi, G.
2009
100-101 9-11 p. 1283-1287
5 p.
artikel
99 A Novel Application of C-AFM: Deep Sub-micron Single Probing for IC Failure Analysis Lee, Jon C.
2003
100-101 9-11 p. 1687-1692
6 p.
artikel
100 A Novel Automatic Polishing Technique for Micro-Controllers with 45° off Si <100> Rotation 2004
100-101 9-11 p. 1611-1614
4 p.
artikel
101 A novel fast and versatile temperature measurement system for LDMOS transistors Tazzoli, A.
2005
100-101 9-11 p. 1742-1745
4 p.
artikel
102 A novel method to measure the internal pressure of MEMS thin-film packages Wang, B.
2013
100-101 9-11 p. 1663-1666
4 p.
artikel
103 A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET Zelsacher, R.
2007
100-101 9-11 p. 1585-1589
5 p.
artikel
104 A novel soldering method to evaluate PCB pad cratering for pin-pull testing Cai, M.
2013
100-101 9-11 p. 1568-1574
7 p.
artikel
105 A novel test structure for OxRRAM process variability evaluation Aziza, H.
2013
100-101 9-11 p. 1208-1212
5 p.
artikel
106 A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors Ciappa, M.
2002
100-101 9-11 p. 1653-1658
6 p.
artikel
107 A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing Rossi, L.
2010
100-101 9-11 p. 1479-1483
5 p.
artikel
108 An overview of the reliability prediction related aspects of high power IGBTs in wind power applications Busca, C.
2011
100-101 9-11 p. 1903-1907
5 p.
artikel
109 ANSYS based 3D electro-thermal simulations for the evaluation of power MOSFETs robustness de Filippis, Stefano
2011
100-101 9-11 p. 1954-1958
5 p.
artikel
110 An ultra-low dark-count and jitter, superconducting, single-photon detector for emission timing analysis of integrated circuits LeCoupanec, P.
2003
100-101 9-11 p. 1621-1626
6 p.
artikel
111 Application of Acoustic Frequency Domain Imaging for the Evaluation of Advanced Micro Electronic Packages Semmens, Janet E.
2002
100-101 9-11 p. 1735-1740
6 p.
artikel
112 Application of MEMS behavioral simulation to Physics of Failure (PoF) modeling Schmitt, P.
2003
100-101 9-11 p. 1957-1962
6 p.
artikel
113 Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits Andriamonje, G.
2003
100-101 9-11 p. 1803-1807
5 p.
artikel
114 Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages Rafiee, P.
2013
100-101 9-11 p. 1563-1567
5 p.
artikel
115 Application of time resolved emission techniques within the failure analysis flow Egger, Peter
2007
100-101 9-11 p. 1545-1549
5 p.
artikel
116 Application of transient interferometric mapping method for ESD and latch-up analysis Pogany, D.
2011
100-101 9-11 p. 1592-1596
5 p.
artikel
117 Application of various optical techniques for ESD defect localization Essely, F.
2006
100-101 9-11 p. 1563-1568
6 p.
artikel
118 Applications of DCIV method to NBTI characterization Neugroschel, A.
2007
100-101 9-11 p. 1366-1372
7 p.
artikel
119 Applications of TEM imaging, analysis and electron holography to III-nitride HEMT devices Smith, David J.
2010
100-101 9-11 p. 1514-1519
6 p.
artikel
120 Applying Bayesian mixtures-of-experts models to statistical description of smart power semiconductor reliability Bluder, Olivia
2011
100-101 9-11 p. 1464-1468
5 p.
artikel
121 Approach of a physically based lifetime model for solder layers in power modules Steinhorst, P.
2013
100-101 9-11 p. 1199-1202
4 p.
artikel
122 A procedure for reliability control and optimization of mixed-signal smart power CMOS pocesses Aal, A.
2003
100-101 9-11 p. 1395-1400
6 p.
artikel
123 A reliability study for a submarine compression application Ceschinib , G.
2002
100-101 9-11 p. 1377-1380
4 p.
artikel
124 A reliable technology concept for active power cycling to extreme temperatures Nelhiebel, M.
2011
100-101 9-11 p. 1927-1932
6 p.
artikel
125 A simple moisture diffusion model for the prediction of optimal baking schedules for plastic SMD packages Lee, K.C.
2005
100-101 9-11 p. 1668-1671
4 p.
artikel
126 A simplified procedure for the analysis of Safety Instrumented Systems in the process industry application Catelani, M.
2011
100-101 9-11 p. 1503-1507
5 p.
artikel
127 A specimen-current branching approach for FA of long Electromigration test lines Caprile, C.
2002
100-101 9-11 p. 1715-1718
4 p.
artikel
128 Assessment of dielectric charging in electrostatically driven MEMS devices: A comparison of available characterization techniques Zaghloul, U.
2010
100-101 9-11 p. 1615-1620
6 p.
artikel
129 Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices Stangoni, Maria
2005
100-101 9-11 p. 1532-1537
6 p.
artikel
130 Assessment of the Trench IGBT reliability: low temperature experimental characterization Azzopardi, S.
2005
100-101 9-11 p. 1700-1705
6 p.
artikel
131 A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation Benmansour, A.
2007
100-101 9-11 p. 1800-1805
6 p.
artikel
132 A study of advanced layout verification to prevent leakage current failure during power down mode operation Songa , Yong-Ha
2002
100-101 9-11 p. 1385-1388
4 p.
artikel
133 A study of an abnormal ESD failure mechanism and threshold voltage caused by ESD current zapping sequence 2004
100-101 9-11 p. 1829-1834
6 p.
artikel
134 A study of considering the reliability issues on ASIC/Memory integration by SIP (System-in-Package) technology Song, Yong-Ha
2003
100-101 9-11 p. 1405-1410
6 p.
artikel
135 A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect Wang, Robin C.J.
2006
100-101 9-11 p. 1673-1678
6 p.
artikel
136 A study of electrical characteristic changes in MOSFET by electron beam irradiation Mitsui, Yasuhiro
2009
100-101 9-11 p. 1182-1187
6 p.
artikel
137 A study of metamorphic HEMT technological improvements: Impact on parasitic effect electrical models Pajona, O.
2007
100-101 9-11 p. 1643-1648
6 p.
artikel
138 A study of SiC Power BJT performance and robustness Castellazzi, A.
2011
100-101 9-11 p. 1773-1777
5 p.
artikel
139 A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices Pietranico, S.
2011
100-101 9-11 p. 1824-1829
6 p.
artikel
140 A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs Castellazzi, A.
2007
100-101 9-11 p. 1713-1718
6 p.
artikel
141 Asynchronous circuits as alternative for mitigation of long-duration transient faults in deep-submicron technologies Bastos, R.P.
2010
100-101 9-11 p. 1241-1246
6 p.
artikel
142 A time-domain physics-of-failure model for the lifetime prediction of wire bond interconnects Yang, L.
2011
100-101 9-11 p. 1882-1886
5 p.
artikel
143 ATPG scan logic failure analysis: a case study of logic ICs – fault isolation, defect mechanism identification and yield improvement Gao, Liming
2006
100-101 9-11 p. 1458-1463
6 p.
artikel
144 Author index 2003
100-101 9-11 p. I-III
nvt p.
artikel
145 Author index 2002
100-101 9-11 p. I-III
nvt p.
artikel
146 Author index 2004
100-101 9-11 p. I-III
nvt p.
artikel
147 author index - authors from this issue only 2006
100-101 9-11 p. I-III
nvt p.
artikel
148 Author index (Generate from contents) 2005
100-101 9-11 p. I-III
nvt p.
artikel
149 Automated Diagnosis and Probing Flow for Fast Fault Localization in IC 2004
100-101 9-11 p. 1553-1558
6 p.
artikel
150 Automated inspection and classification of flip-chip-contacts using scanning acoustic microscopy Brand, S.
2010
100-101 9-11 p. 1469-1473
5 p.
artikel
151 Automated setup for thermal imaging and electrical degradation study of power DMOS devices Heer, M.
2005
100-101 9-11 p. 1688-1693
6 p.
artikel
152 Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation Deckelmann, A.Icaza
2003
100-101 9-11 p. 1895-1900
6 p.
artikel
153 Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs Sasso, G.
2010
100-101 9-11 p. 1577-1580
4 p.
artikel
154 Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules Dugal, Franc
2013
100-101 9-11 p. 1403-1408
6 p.
artikel
155 Backend dielectric breakdown dependence on linewidth and pattern density Milor, Linda
2007
100-101 9-11 p. 1473-1477
5 p.
artikel
156 Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices Beaudoin, F.
2002
100-101 9-11 p. 1581-1585
5 p.
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157 Backside failure analysis case study: Implementation of innovative Local Backside Deprocessing technique Laroche, A.
2011
100-101 9-11 p. 1705-1709
5 p.
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158 Backside Failure Analysis of GaAs ICs after ESD tests Meneghesso, G.
2002
100-101 9-11 p. 1293-1298
6 p.
artikel
159 Backside Flip-Chip testing by means of high-bandwidth luminescence detection Tosi, A.
2003
100-101 9-11 p. 1669-1674
6 p.
artikel
160 Backside Hot Spot Detection Using Liquid Crystal Microscopy Crepel, O.
2002
100-101 9-11 p. 1741-1746
6 p.
artikel
161 Backside interferometric methods for localization of ESD-induced leakage current and metal shorts Dubec, V.
2007
100-101 9-11 p. 1539-1544
6 p.
artikel
162 Basic Principles for Managing Foundry Programs London, A.
2005
100-101 9-11 p. 1285-1292
8 p.
artikel
163 Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI) Liao, Jie
2009
100-101 9-11 p. 1038-1043
6 p.
artikel
164 Benefits of field failure distribution modeling to the failure analysis Bergès, C.
2013
100-101 9-11 p. 1194-1198
5 p.
artikel
165 Biaxial initial stress characterization of bilayer gold RF-switches Yacine, K.
2005
100-101 9-11 p. 1776-1781
6 p.
artikel
166 Bidirectional electromigration failure Lim, M.K.
2013
100-101 9-11 p. 1261-1265
5 p.
artikel
167 Black’s law revisited—Nucleation and growth in electromigration failure Lloyd, J.R.
2007
100-101 9-11 p. 1468-1472
5 p.
artikel
168 Breakdown characterization of gate oxides in 35 and 70Å BCD8 smart power technology Tazzoli, A.
2009
100-101 9-11 p. 1111-1115
5 p.
artikel
169 Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise Amara-Dababi, S.
2013
100-101 9-11 p. 1239-1242
4 p.
artikel
170 BTI and HCI first-order aging estimation for early use in standard cell technology mapping Butzen, P.F.
2013
100-101 9-11 p. 1360-1364
5 p.
artikel
171 BTI, HCI and TDDB aging impact in flip–flops Nunes, Cícero
2013
100-101 9-11 p. 1355-1359
5 p.
artikel
172 CADless laser assisted methodologies for failure analysis and device reliability Deyine, A.
2010
100-101 9-11 p. 1236-1240
5 p.
artikel
173 CAD navigation system, for backside waveform probing of CMOS devices Miura, Katsuyoshi
2002
100-101 9-11 p. 1679-1684
6 p.
artikel
174 Capacitive RF MEMS analytical predictive reliability and lifetime characterization Matmat, Mohamed
2009
100-101 9-11 p. 1304-1308
5 p.
artikel
175 Case study: Failure analysis for metal corrosion induced by pressure pot test Mello, D.
2010
100-101 9-11 p. 1436-1440
5 p.
artikel
176 Case study of a technology transfer causing ESD problems Zängla , F.
2002
100-101 9-11 p. 1275-1280
6 p.
artikel
177 Challenges and opportunity in performance, variability and reliability in sub-45nm CMOS technologies Arnaud, F.
2011
100-101 9-11 p. 1508-1514
7 p.
artikel
178 Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs Malbert, N.
2009
100-101 9-11 p. 1216-1221
6 p.
artikel
179 Characterisation of dopants distribution using electron holography and FIB-based lift-off preparation Muehle, U.
2005
100-101 9-11 p. 1558-1561
4 p.
artikel
180 Characterisation of IC packaging interfaces and loading effects Yeo, H.C.
2006
100-101 9-11 p. 1892-1897
6 p.
artikel
181 Characterisation of power modules ceramic substrates for reliability aspects Pietranico, S.
2009
100-101 9-11 p. 1260-1266
7 p.
artikel
182 Characterising gate dielectrics in high mobility devices using novel nanoscale techniques Kapoor, R.
2010
100-101 9-11 p. 1484-1487
4 p.
artikel
183 Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs Faqir, M.
2007
100-101 9-11 p. 1639-1642
4 p.
artikel
184 Characterization and fatigue damage simulation in SAC solder joints 2004
100-101 9-11 p. 1287-1292
6 p.
artikel
185 Characterization and modeling of laser-induced single-event burn-out in SiC power diodes Mbaye, N.
2013
100-101 9-11 p. 1315-1319
5 p.
artikel
186 Characterization and modelling of ageing failures on power MOSFET devices Khong, B.
2007
100-101 9-11 p. 1735-1740
6 p.
artikel
187 Characterization and Modelling of Moisture Driven Interface Failures 2004
100-101 9-11 p. 1317-1322
6 p.
artikel
188 Characterization and modelling of single event transients in LDMOS-SOI FETs Alvarado, J.
2011
100-101 9-11 p. 2004-2009
6 p.
artikel
189 Characterization and reliability of a switch matrix based on MOEMS technology Boyer Heard, I.
2003
100-101 9-11 p. 1935-1937
3 p.
artikel
190 Characterization of ageing failures on power MOSFET devices by electron and ion microscopies Martineau, D.
2009
100-101 9-11 p. 1330-1333
4 p.
artikel
191 Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue Martineau, D.
2010
100-101 9-11 p. 1768-1772
5 p.
artikel
192 Characterization of a 0.13 μm CMOS Link Chip using Time Resolved Emission (TRE) Stellari, Franco
2005
100-101 9-11 p. 1550-1553
4 p.
artikel
193 Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS) Beauchêne, T.
2003
100-101 9-11 p. 1577-1582
6 p.
artikel
194 Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature Tounsi, M.
2010
100-101 9-11 p. 1810-1814
5 p.
artikel
195 Characterization of moisture properties of polymers for IC packaging Ma, Xiaosong
2007
100-101 9-11 p. 1685-1689
5 p.
artikel
196 Characterization of photonic devices by secondary electron potential contrast Buzzo, M.
2006
100-101 9-11 p. 1536-1541
6 p.
artikel
197 Characterization of self-heating effects in semiconductor resistors during transmission line pulses 2004
100-101 9-11 p. 1873-1878
6 p.
artikel
198 Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures Glowacki, A.
2009
100-101 9-11 p. 1211-1215
5 p.
artikel
199 Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy Berthet, F.
2011
100-101 9-11 p. 1796-1800
5 p.
artikel
200 Characterization of thin and ultra-thin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy Frammelsberger, Werner
2003
100-101 9-11 p. 1465-1470
6 p.
artikel
201 Characterization of Trench MOS Gate Structures Utilizing Photon Emission Microscopy Usui, Masanori
2002
100-101 9-11 p. 1647-1652
6 p.
artikel
202 Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy Cavallini, Anna
2010
100-101 9-11 p. 1398-1406
9 p.
artikel
203 Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection Nazarov, A.N.
2002
100-101 9-11 p. 1461-1464
4 p.
artikel
204 Charge trapping in SiO2/HfO2/TiN gate stack Lime, F
2003
100-101 9-11 p. 1445-1448
4 p.
artikel
205 Charging-Effects in RF capacitive switches influence of insulating layers composition Lamhamdi, M.
2006
100-101 9-11 p. 1700-1704
5 p.
artikel
206 Charging induced damage by photoconduction through thick inter metal dielectrics Ackaert, Jan
2003
100-101 9-11 p. 1525-1529
5 p.
artikel
207 Charging of radiation induced defects in RF MEMS dielectric films Exarchos, M.
2006
100-101 9-11 p. 1695-1699
5 p.
artikel
208 Chip on flex attachment with thermoplastic ACF for RFID applications Frisk, L.
2002
100-101 9-11 p. 1559-1562
4 p.
artikel
209 Chromatic and spherical aberration correction for silicon aplanatic solid immersion lens for fault isolation and photon emission microscopy of integrated circuits Goldberg, B.B.
2011
100-101 9-11 p. 1637-1639
3 p.
artikel
210 Circuit-internal signal measurements with a needle sensor Hartmann, C.
2005
100-101 9-11 p. 1505-1508
4 p.
artikel
211 CMOS logic gate performance variability related to transistor network arrangements da Silva, Digeorgia N.
2009
100-101 9-11 p. 977-981
5 p.
artikel
212 Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs Alvarado, J.
2010
100-101 9-11 p. 1852-1856
5 p.
artikel
213 Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications Castellazzi, A.
2006
100-101 9-11 p. 1754-1759
6 p.
artikel
214 Compact MOS-triggered SCR with faster turn-on speed for ESD protection Song, Bo
2010
100-101 9-11 p. 1393-1397
5 p.
artikel
215 Comparative analysis of accelerated ageing effects on power RF LDMOS reliability Belaïd, M.A.
2005
100-101 9-11 p. 1732-1737
6 p.
artikel
216 Comparative studies on solder joint reliability of CTBGA assemblies with various adhesives using the array-based package shear test Shi, Hongbin
2011
100-101 9-11 p. 1898-1902
5 p.
artikel
217 Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs Jang, Sung Jun
2007
100-101 9-11 p. 1411-1415
5 p.
artikel
218 Comparative study of sensitive volume and triggering criteria of SEB in 600V planar and trench IGBTs Zerarka, M.
2011
100-101 9-11 p. 1990-1994
5 p.
artikel
219 Comparative study of thermal cycling and thermal shocks tests on electronic components reliability 2004
100-101 9-11 p. 1343-1347
5 p.
artikel
220 Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics 2004
100-101 9-11 p. 1479-1483
5 p.
artikel
221 Comparing drop impact test method using strain gauge measurements Liu, Y.
2009
100-101 9-11 p. 1299-1303
5 p.
artikel
222 Comparison and evaluation of newest failure rate prediction models: FIDES and RIAC 217Plus Held, Marcel
2009
100-101 9-11 p. 967-971
5 p.
artikel
223 Comparison between positive and negative constant current stress on dye-sensitized solar cells Bari, D.
2013
100-101 9-11 p. 1804-1808
5 p.
artikel
224 Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress 2004
100-101 9-11 p. 1461-1465
5 p.
artikel
225 Comparison of IGBT short-circuit failure “ohmic mode”: Epoxy molded package versus silicone gel module for new fail-safe and interruptible power converters Richardeau, Frédéric
2011
100-101 9-11 p. 1919-1926
8 p.
artikel
226 Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate Rossetto, I.
2013
100-101 9-11 p. 1476-1480
5 p.
artikel
227 Comprehensive failure analysis of leakage faults in bipolar transistors Domengès, B.
2002
100-101 9-11 p. 1449-1452
4 p.
artikel
228 Comprehensive nanostructural study of SSRM nanocontact on silicon Delaroque, T.
2011
100-101 9-11 p. 1693-1696
4 p.
artikel
229 Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method Yoon, Y.G.
2013
100-101 9-11 p. 1519-1523
5 p.
artikel
230 Concurrent PBTI and hot carrier degradation in n-channel MuGFETs Lee, Sueng Min
2011
100-101 9-11 p. 1544-1546
3 p.
artikel
231 Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests Tlig, M.
2013
100-101 9-11 p. 1793-1797
5 p.
artikel
232 Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures Blasco, X.
2002
100-101 9-11 p. 1513-1516
4 p.
artikel
233 Conductive adhesive joint for extreme temperature applications Jullien, J.B.
2013
100-101 9-11 p. 1597-1601
5 p.
artikel
234 Configuration errors analysis in SRAM-based FPGAs: Software tool and practical results Maingot, V.
2007
100-101 9-11 p. 1836-1840
5 p.
artikel
235 Contactless current and voltage measurements in integrated circuits by using a needle sensor Neinhüs, M.
2002
100-101 9-11 p. 1695-1700
6 p.
artikel
236 Contact resistivity instability in embedded SRAM memory Mervic, A.
2002
100-101 9-11 p. 1365-1368
4 p.
artikel
237 Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node Schlangen, R.
2006
100-101 9-11 p. 1498-1503
6 p.
artikel
238 Contents - take from IPS 2006
100-101 9-11 p. iii-viii
nvt p.
artikel
239 Contoured device sample preparation technique for ±5μm remaining silicon thicknesses that meets solid immersion lens requirements Richardson, Chris
2013
100-101 9-11 p. 1434-1438
5 p.
artikel
240 Contribution of calendar ageing modes in the performances degradation of supercapacitors during power cycling Briat, O.
2010
100-101 9-11 p. 1796-1803
8 p.
artikel
241 Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices Zander, D.
2003
100-101 9-11 p. 1489-1493
5 p.
artikel
242 Contribution to ageing simulation of complex analogue circuit using VHDL-AMS behavioural modelling language Mongellaz, B.
2002
100-101 9-11 p. 1353-1358
6 p.
artikel
243 Control of the electromagnetic compatibility: An issue for IC reliability Gros, Jean-Baptiste
2011
100-101 9-11 p. 1493-1497
5 p.
artikel
244 Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters Carastro, F.
2010
100-101 9-11 p. 1738-1743
6 p.
artikel
245 Correlation between EOS customer return failure cases and Over Voltage Stress (OVS) test method Lefebvre, Jean Luc
2009
100-101 9-11 p. 952-957
6 p.
artikel
246 Correlation between Experimental Results and FE Simulations to Evaluate Lead-Free BGA Assembly Reliability Guédon-Gracia, A.
2005
100-101 9-11 p. 1652-1657
6 p.
artikel
247 Correlation between X-ray micro-diffraction and a developed analytical model to measure the residual stresses in suspended structures in MEMS Rigo, S.
2003
100-101 9-11 p. 1963-1968
6 p.
artikel
248 Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM Pey, K.L
2003
100-101 9-11 p. 1471-1476
6 p.
artikel
249 Correlation of gate oxide reliability and product tests on leading edge DRAM technology Aichmayr, G.
2003
100-101 9-11 p. 1389-1393
5 p.
artikel
250 Coupled measurement-simulation procedure for very high power fast recovery – Soft behavior diode design and testing Bertoluzza, F.
2010
100-101 9-11 p. 1720-1724
5 p.
artikel
251 Cratering response method to study the effect of ultrasonic energy on Cu-wire bonding quality Rongen, R.T.H.
2011
100-101 9-11 p. 1865-1868
4 p.
artikel
252 Creep as a reliability problem in MEMS 2004
100-101 9-11 p. 1733-1738
6 p.
artikel
253 Creep lifetime prediction of solder joint for heat sink assembly Han, Changwoon
2010
100-101 9-11 p. 1645-1649
5 p.
artikel
254 Cu pumping in TSVs: Effect of pre-CMP thermal budget De Wolf, I.
2011
100-101 9-11 p. 1856-1859
4 p.
artikel
255 Current crowding in faulty MOSFET: optical and electrical investigation 2004
100-101 9-11 p. 1577-1581
5 p.
artikel
256 Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors Benoit, P.
2005
100-101 9-11 p. 1800-1806
7 p.
artikel
257 DC parameters for laser diodes from experimental curves Vanzi, M.
2011
100-101 9-11 p. 1752-1756
5 p.
artikel
258 DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues Verzellesi, G.
2005
100-101 9-11 p. 1585-1592
8 p.
artikel
259 2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy 2004
100-101 9-11 p. 1681-1686
6 p.
artikel
260 Defect detection in multilayer ceramic capacitors Krieger, V.
2006
100-101 9-11 p. 1926-1931
6 p.
artikel
261 Defect-related degradation of Deep-UV-LEDs Meneghini, M.
2010
100-101 9-11 p. 1538-1542
5 p.
artikel
262 Defect signatures in degraded high power laser diodes Hortelano, V.
2013
100-101 9-11 p. 1501-1505
5 p.
artikel
263 Deformation and damage of a solder–copper joint Tropea, P.
2003
100-101 9-11 p. 1791-1796
6 p.
artikel
264 Degradation Based Long-Term Reliability Assessment for Electronic Components in Submarine Applications Lista, V.
2002
100-101 9-11 p. 1389-1392
4 p.
artikel
265 Degradation behavior of 600V–200A IGBT modules under power cycling and high temperature environment conditions Bouarroudj, M.
2007
100-101 9-11 p. 1719-1724
6 p.
artikel
266 Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors Danesin, Francesca
2006
100-101 9-11 p. 1750-1753
4 p.
artikel
267 Degradation in polysilicon thin film transistors related to the quality of the polysilicon material Toutah, H.
2003
100-101 9-11 p. 1531-1535
5 p.
artikel
268 Degradation mechanism analysis in temperature stress tests on III–V ultra-high concentrator solar cells using a 3D distributed model Espinet, P.
2010
100-101 9-11 p. 1875-1879
5 p.
artikel
269 Degradation mechanisms induced by thermal and bias stresses in InP HEMTs Labat, N.
2002
100-101 9-11 p. 1575-1580
6 p.
artikel
270 Degradation mechanisms of high-power white LEDs activated by current and temperature Dal Lago, M.
2011
100-101 9-11 p. 1742-1746
5 p.
artikel
271 Degradation mechanism understanding of NLDEMOS SOI in RF applications Lachenal, D.
2007
100-101 9-11 p. 1634-1638
5 p.
artikel
272 Degradation of AlInGaP red LEDs under drive current and temperature accelerated life tests Vázquez, M.
2010
100-101 9-11 p. 1559-1562
4 p.
artikel
273 Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress Farmakis, F.V.
2007
100-101 9-11 p. 1434-1438
5 p.
artikel
274 Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation 2004
100-101 9-11 p. 1721-1726
6 p.
artikel
275 Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress Miranda, E.
2005
100-101 9-11 p. 1365-1369
5 p.
artikel
276 Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency Trivellin, N.
2011
100-101 9-11 p. 1747-1751
5 p.
artikel
277 Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stress Michalas, L.
2010
100-101 9-11 p. 1848-1851
4 p.
artikel
278 Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress Gerardin, S.
2006
100-101 9-11 p. 1669-1672
4 p.
artikel
279 Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs Piazza, Michele
2009
100-101 9-11 p. 1222-1225
4 p.
artikel
280 Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions Yuan, C.
2006
100-101 9-11 p. 1679-1684
6 p.
artikel
281 3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs Azoui, T.
2011
100-101 9-11 p. 1943-1947
5 p.
artikel
282 Dependence of copper interconnect electromigration phenomenon on barrier metal materials Hayashi, Masashi
2003
100-101 9-11 p. 1545-1550
6 p.
artikel
283 Dependence of Post-Breakdown Conduction on Gate Oxide Thickness Lombardo, S.
2002
100-101 9-11 p. 1481-1484
4 p.
artikel
284 Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards DeNardi, C.
2006
100-101 9-11 p. 1569-1574
6 p.
artikel
285 Design considerations and strategies for high-reliable STT-MRAM Zhao, W.S.
2011
100-101 9-11 p. 1454-1458
5 p.
artikel
286 “Design for EMI” approach on power PiN diode reverse recovery Tsukuda, M.
2011
100-101 9-11 p. 1972-1975
4 p.
artikel
287 Design for reliability of power electronics modules Lu, Hua
2009
100-101 9-11 p. 1250-1255
6 p.
artikel
288 Designing in reliability in advanced CMOS technologies Parthasarathy, C.R.
2006
100-101 9-11 p. 1464-1471
8 p.
artikel
289 Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications Yoshimura, Masayuki
2013
100-101 9-11 p. 1778-1782
5 p.
artikel
290 Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications Ciappa, M.
2011
100-101 9-11 p. 1479-1483
5 p.
artikel
291 Destructive events in NAND Flash memories irradiated with heavy ions Bagatin, M.
2010
100-101 9-11 p. 1832-1836
5 p.
artikel
292 Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion Weber, Y.
2013
100-101 9-11 p. 1393-1398
6 p.
artikel
293 Determination of bulk discharge current in the dielectric film of MEMS capacitive switches Koutsoureli, M.S.
2011
100-101 9-11 p. 1874-1877
4 p.
artikel
294 Determination of passive SiO2-Au microstructure resonant frequencies. Marinier, Guillaume
2003
100-101 9-11 p. 1951-1955
5 p.
artikel
295 Determination of the ESD Failure Cause Through its Signature Zecri, M.
2003
100-101 9-11 p. 1551-1556
6 p.
artikel
296 Determination of the stress level for voltage screen of integrated circuits Kho, R.M.
2010
100-101 9-11 p. 1210-1214
5 p.
artikel
297 Development of a matrix test board for capacitor reliability testing Virkki, J.
2010
100-101 9-11 p. 1711-1714
4 p.
artikel
298 Development of highly accelerated electromigration test Tan, Cher Ming
2006
100-101 9-11 p. 1638-1642
5 p.
artikel
299 Device decapsulated (and/or depassivated) – Retest ok – What happened? Jacob, Peter
2007
100-101 9-11 p. 1574-1579
6 p.
artikel
300 Device level electrical-thermal-stress coupled-field modeling Huang, Guang Yu
2006
100-101 9-11 p. 1823-1827
5 p.
artikel
301 Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy Rao, Hemant
2010
100-101 9-11 p. 1528-1531
4 p.
artikel
302 Device Simulation and Backside Laser Interferometry––Powerful Tools for ESD Protection Development Stadler, W.
2002
100-101 9-11 p. 1267-1274
8 p.
artikel
303 3D failure analysis in depth profiles of sequentially made FIB cuts Mc Auley, C.N.
2007
100-101 9-11 p. 1595-1598
4 p.
artikel
304 Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions Zaghloul, U.
2009
100-101 9-11 p. 1309-1314
6 p.
artikel
305 Dielectric reliability of stacked Al2O3–HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics Seo, J.Y.
2005
100-101 9-11 p. 1360-1364
5 p.
artikel
306 Die repackaging for failure analysis Barberan, S.
2005
100-101 9-11 p. 1576-1580
5 p.
artikel
307 Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure Guitard, N.
2005
100-101 9-11 p. 1415-1420
6 p.
artikel
308 Direct measurement of residual stress in integrated circuit interconnect features Horsfall, A.B.
2003
100-101 9-11 p. 1797-1801
5 p.
artikel
309 Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress Saura, X.
2013
100-101 9-11 p. 1257-1260
4 p.
artikel
310 Displacement current sensor for contact and intermittent contact scanning capacitance microscopy Biberger, Roland
2009
100-101 9-11 p. 1192-1195
4 p.
artikel
311 Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions Moussodji, J.
2013
100-101 9-11 p. 1725-1729
5 p.
artikel
312 Do ESD fails in systems correlate with IC ESD robustness? Stadler, Wolfgang
2009
100-101 9-11 p. 1079-1085
7 p.
artikel
313 Double-cantilever device for Atomic Force Microscopy in dynamic noncontact-mode Müllera , A.-D.
2002
100-101 9-11 p. 1685-1688
4 p.
artikel
314 Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy Royon, A.
2013
100-101 9-11 p. 1514-1518
5 p.
artikel
315 Dynamic active cooling for improved power system reliability Castellazzi, A.
2011
100-101 9-11 p. 1964-1967
4 p.
artikel
316 Dynamic defect localization using FPGA to monitor digital values Saury, L.
2011
100-101 9-11 p. 1701-1704
4 p.
artikel
317 Dynamic electro-thermal modeling for power device assemblies Cova, P.
2011
100-101 9-11 p. 1948-1953
6 p.
artikel
318 Dynamic Laser Stimulation Case Studies Beaudoin, F.
2005
100-101 9-11 p. 1538-1543
6 p.
artikel
319 Dynamic laser stimulation techniques for advanced failure analysis and design debug applications Beaudoin, F.
2007
100-101 9-11 p. 1517-1522
6 p.
artikel
320 Dynamic lock-in thermography for operation mode-dependent thermally active fault localization Schlangen, R.
2010
100-101 9-11 p. 1454-1458
5 p.
artikel
321 Dynamic Near-Field Scanning Thermal Microscopy on thin films Heiderhoff, R.
2013
100-101 9-11 p. 1413-1417
5 p.
artikel
322 Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects Moujbani, Aymen
2013
100-101 9-11 p. 1365-1369
5 p.
artikel
323 Dynamic simulation of octahedron slotted metal structures Kludt, J.
2013
100-101 9-11 p. 1606-1610
5 p.
artikel
324 Dynamic stress-induced high-frequency noise degradations in nMOSFETs Yu, Chuanzhao
2005
100-101 9-11 p. 1794-1799
6 p.
artikel
325 Dynamic voltage stress effects on nMOS varactor Yu, Chuanzhao
2006
100-101 9-11 p. 1812-1816
5 p.
artikel
326 Editorial Lewis, Dean
2009
100-101 9-11 p. 935-936
2 p.
artikel
327 Editorial Fantini, Fausto
2002
100-101 9-11 p. 1249-
1 p.
artikel
328 Editorial Labat, Nathalie
2011
100-101 9-11 p. 1423-1424
2 p.
artikel
329 Editorial Labat, Nathalie
2013
100-101 9-11 p. 1169-1170
2 p.
artikel
330 Editorial Labat, Nathalie
2007
100-101 9-11 p. 1311-1312
2 p.
artikel
331 Editorial Busatto, Giovanni
2010
100-101 9-11 p. 1191-1192
2 p.
artikel
332 Editorial Balk, L.J.
2006
100-101 9-11 p. 1401-1402
2 p.
artikel
333 Effective and reliable heat management for power devices exposed to cyclic short overload pulses Nelhiebel, M.
2013
100-101 9-11 p. 1745-1749
5 p.
artikel
334 Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode Irace, A.
2006
100-101 9-11 p. 1784-1789
6 p.
artikel
335 Effect of bonding pressure on reliability of flip chip joints on flexible and rigid substrates 2004
100-101 9-11 p. 1305-1310
6 p.
artikel
336 Effect of high temperature aging on reliability of automotive electronics Yang, D.G.
2011
100-101 9-11 p. 1938-1942
5 p.
artikel
337 Effect of long and short Pb-free soldering profiles of IPC/JEDEC J-STD-020 on plastic SMD packages 2004
100-101 9-11 p. 1293-1297
5 p.
artikel
338 Effect of moisture swelling on MEMS packaging and integrated sensors Keller, J.
2013
100-101 9-11 p. 1648-1654
7 p.
artikel
339 Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs Lee, Seonhaeng
2013
100-101 9-11 p. 1351-1354
4 p.
artikel
340 Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics 2004
100-101 9-11 p. 1509-1512
4 p.
artikel
341 Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures Roy, Arijit
2005
100-101 9-11 p. 1443-1448
6 p.
artikel
342 Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects Tan, Cher Ming
2005
100-101 9-11 p. 1449-1454
6 p.
artikel
343 Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems Leray, J.L.
2007
100-101 9-11 p. 1827-1835
9 p.
artikel
344 Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs Djoric-Veljkovic, S.
2003
100-101 9-11 p. 1455-1460
6 p.
artikel
345 Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors Cho, Edward Namkyu
2011
100-101 9-11 p. 1792-1795
4 p.
artikel
346 Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric Wrachien, N.
2013
100-101 9-11 p. 1798-1803
6 p.
artikel
347 Effects of device layout on the drain breakdown voltages in MuGFETs Kim, Jin Young
2011
100-101 9-11 p. 1547-1550
4 p.
artikel
348 Effects of electromagnetic near-field stress on SiGe HBT’s reliability Alaeddine, A.
2009
100-101 9-11 p. 1029-1032
4 p.
artikel
349 Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors 2004
100-101 9-11 p. 1631-1636
6 p.
artikel
350 Effects of hot carrier stress on the RF performance in SOI MOSFETs 2004
100-101 9-11 p. 1637-1642
6 p.
artikel
351 Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs Manić, I.
2009
100-101 9-11 p. 1003-1007
5 p.
artikel
352 Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling Dupont, L.
2006
100-101 9-11 p. 1766-1771
6 p.
artikel
353 Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses Baillot, R.
2010
100-101 9-11 p. 1568-1573
6 p.
artikel
354 Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks Miranda, E.
2009
100-101 9-11 p. 1052-1055
4 p.
artikel
355 Effects of uni-axial mechanical stress on IGBT characteristics Usui, Masanori
2005
100-101 9-11 p. 1682-1687
6 p.
artikel
356 Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror Bestory, C.
2009
100-101 9-11 p. 946-951
6 p.
artikel
357 Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure Pil Kim, Young
2003
100-101 9-11 p. 1461-1464
4 p.
artikel
358 Electrical behavior of Au–Ge eutectic solder under aging for solder bump application in high temperature Electronics Lau, F.L.
2013
100-101 9-11 p. 1581-1586
6 p.
artikel
359 Electrical characteristics measurement of transistors by 4 tips-0.2 micron probing technique in Semiconductor Failure Analysis Gireta , C.
2002
100-101 9-11 p. 1723-1727
5 p.
artikel
360 Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides Rafı́, J.M.
2002
100-101 9-11 p. 1501-1504
4 p.
artikel
361 Electrical characterization and reliability study of integrated GaN power amplifier in multi-layer thin-film technology Liu, R.
2011
100-101 9-11 p. 1721-1724
4 p.
artikel
362 Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach Baccar, F.
2013
100-101 9-11 p. 1719-1724
6 p.
artikel
363 Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. Pogany, D.
2002
100-101 9-11 p. 1673-1677
5 p.
artikel
364 Electrical modeling of the effect of beam profile for pulsed laser fault injection Godlewski, C.
2009
100-101 9-11 p. 1143-1147
5 p.
artikel
365 Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell Sarafianos, A.
2013
100-101 9-11 p. 1300-1305
6 p.
artikel
366 Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests Belaïd, M.A.
2006
100-101 9-11 p. 1800-1805
6 p.
artikel
367 Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations Schlangen, R.
2005
100-101 9-11 p. 1544-1549
6 p.
artikel
368 Electrical steering of vehicles - fault-tolerant analysis and design Blanke, Mogens
2006
100-101 9-11 p. 1421-1432
12 p.
artikel
369 Electric field unbalance for robust floating ring termination Villamor-Baliarda, A.
2011
100-101 9-11 p. 1959-1963
5 p.
artikel
370 Electro- and thermomigration-induced IMC formation in SnAg3.0Cu0.5 solder joints on nickel gold pads Meinshausen, L.
2013
100-101 9-11 p. 1575-1580
6 p.
artikel
371 Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier Huyghe, S.
2005
100-101 9-11 p. 1593-1599
7 p.
artikel
372 Electromagnetic immunity model of an ADC for microcontroller’s reliability improvement Gros, Jean-Baptiste
2009
100-101 9-11 p. 963-966
4 p.
artikel
373 Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps Miyazaki, Toru
2006
100-101 9-11 p. 1898-1903
6 p.
artikel
374 Electromigration failure distributions of dual damascene Cu /low – k interconnects Oates, A.S.
2006
100-101 9-11 p. 1581-1586
6 p.
artikel
375 Electromigration in width transition copper interconnect Roy, Arijit
2009
100-101 9-11 p. 1086-1089
4 p.
artikel
376 Electromigration in WLCSP solder bumps Ubachs, R.L.J.M.
2010
100-101 9-11 p. 1678-1683
6 p.
artikel
377 Electromigration lifetimes and void growth at low cumulative failure probability Tsuchiya, Hideaki
2006
100-101 9-11 p. 1415-1420
6 p.
artikel
378 Electromigration performance of Through Silicon Via (TSV) – A modeling approach Tan, Y.C.
2010
100-101 9-11 p. 1336-1340
5 p.
artikel
379 Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development Courtas, S.
2006
100-101 9-11 p. 1530-1535
6 p.
artikel
380 Electron beam induced carbon deposition using hydrocarbon contamination for XTEM analysis Luo, J.S.
2010
100-101 9-11 p. 1446-1450
5 p.
artikel
381 Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects Lucovsky, G.
2003
100-101 9-11 p. 1417-1426
10 p.
artikel
382 Electrostatic discharge failure analysis of capacitive RF MEMS switches Ruan, J.
2007
100-101 9-11 p. 1818-1822
5 p.
artikel
383 ElectroStatic Discharge Fault Localization by Laser Probing Grauby, S.
2005
100-101 9-11 p. 1482-1486
5 p.
artikel
384 Electrostatic Effects on Semiconductor Tools 2004
100-101 9-11 p. 1787-1792
6 p.
artikel
385 Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology Riccio, M.
2011
100-101 9-11 p. 1725-1729
5 p.
artikel
386 Electro-thermal short pulsed simulation for SOI technology Entringer, Christophe
2006
100-101 9-11 p. 1482-1485
4 p.
artikel
387 Electro-thermal simulation of metal interconnections under high current flow Bagnoli, P.E.
2010
100-101 9-11 p. 1672-1677
6 p.
artikel
388 Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices Lee, Jin-Wook
2005
100-101 9-11 p. 1394-1397
4 p.
artikel
389 Embedded packaging and assembly; Reliability and supply chain implications Bauer, Charles E.
2013
100-101 9-11 p. 1179-1182
4 p.
artikel
390 Enhanced finite element modelling of Cu electromigration using ANSYS and matlab Li, Wei
2007
100-101 9-11 p. 1497-1501
5 p.
artikel
391 Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination 2004
100-101 9-11 p. 1473-1478
6 p.
artikel
392 Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism Iannacci, J.
2010
100-101 9-11 p. 1599-1603
5 p.
artikel
393 Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation Ciappa, Mauro
2009
100-101 9-11 p. 972-976
5 p.
artikel
394 ESD characterization of multi-chip RGB LEDs Vaccari, S.
2013
100-101 9-11 p. 1510-1513
4 p.
artikel
395 ESD circuit model based protection network optimisation for extended-voltage NMOS drivers Vassilev, V.
2005
100-101 9-11 p. 1430-1435
6 p.
artikel
396 ESD protection strategies in advanced CMOS SOI ICs Khazhinsky, M.G.
2007
100-101 9-11 p. 1313-1321
9 p.
artikel
397 ESD protection structure qualification – a new approach for release for automotive applications Goroll, M.
2006
100-101 9-11 p. 1648-1651
4 p.
artikel
398 ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology Sponton, L.
2002
100-101 9-11 p. 1303-1306
4 p.
artikel
399 ESD sensitivity of a GaAs MMIC microwave power amplifier Tazzoli, Augusto
2011
100-101 9-11 p. 1602-1607
6 p.
artikel
400 ESD sensitivity of AlGaAs and InGaAsP based Fabry–Perot laser diodes Neitzert, H.C.
2010
100-101 9-11 p. 1563-1567
5 p.
artikel
401 ESD Susceptibility of Submicron Air Gaps Wolf, Heinrich
2006
100-101 9-11 p. 1587-1590
4 p.
artikel
402 ESD testing of devices, ICs and systems Smedes, T.
2009
100-101 9-11 p. 941-945
5 p.
artikel
403 Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling Azoui, T.
2013
100-101 9-11 p. 1750-1754
5 p.
artikel
404 Estimation of SiC JFET temperature during short-circuit operations Berkani, Mounira
2009
100-101 9-11 p. 1358-1362
5 p.
artikel
405 Evaluation methodology of thin dielectrics for non-volatile memory application Ghidini, G.
2002
100-101 9-11 p. 1473-1480
8 p.
artikel
406 Evaluation of AlGaInP LEDs reliability based on accelerated tests Nogueira, E.
2009
100-101 9-11 p. 1240-1243
4 p.
artikel
407 Evaluation of a micropackaging analysis technique by highfrequency microwaves Duchamp, G.
2002
100-101 9-11 p. 1551-1554
4 p.
artikel
408 Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors Belaïd, M.A.
2010
100-101 9-11 p. 1763-1767
5 p.
artikel
409 Evaluation of lead-free soldering for automotive applications Guédon, Alexandrine
2002
100-101 9-11 p. 1555-1558
4 p.
artikel
410 Evaluation of scanning capacitance microscopy sample preparation by focused ion beam Rodriguez, N.
2006
100-101 9-11 p. 1554-1557
4 p.
artikel
411 Evaluation of STI degradation using temperature dependence of leakage current in parasitic STI MOSFET 2004
100-101 9-11 p. 1751-1755
5 p.
artikel
412 Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32nm Bourgeat, J.
2010
100-101 9-11 p. 1379-1382
4 p.
artikel
413 Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers Metzger, A.G.
2013
100-101 9-11 p. 1471-1475
5 p.
artikel
414 Evidence for source side injection hot carrier effects on lateral DMOS transistors 2004
100-101 9-11 p. 1621-1624
4 p.
artikel
415 Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors Aresu, S.
2007
100-101 9-11 p. 1416-1418
3 p.
artikel
416 Experimental analysis of electro-thermal instability in SiC Power MOSFETs Riccio, M.
2013
100-101 9-11 p. 1739-1744
6 p.
artikel
417 Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects Czerny, B.
2013
100-101 9-11 p. 1558-1562
5 p.
artikel
418 Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse Galya , P.
2002
100-101 9-11 p. 1299-1302
4 p.
artikel
419 Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices Heer, M.
2007
100-101 9-11 p. 1450-1455
6 p.
artikel
420 Experimental and Numerical investigation about SEB/SEGR of Power MOSFET Busatto, G.
2005
100-101 9-11 p. 1711-1716
6 p.
artikel
421 Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode Dupont, L.
2010
100-101 9-11 p. 1804-1809
6 p.
artikel
422 Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress Di Lecce, Valerio
2010
100-101 9-11 p. 1523-1527
5 p.
artikel
423 Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions Blaho, M.
2002
100-101 9-11 p. 1281-1286
6 p.
artikel
424 Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching 2004
100-101 9-11 p. 1455-1459
5 p.
artikel
425 Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature Belmehdi, Yassine
2010
100-101 9-11 p. 1815-1821
7 p.
artikel
426 Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS) Zhu, F.
2013
100-101 9-11 p. 1288-1292
5 p.
artikel
427 Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect Roy, Arijit
2006
100-101 9-11 p. 1652-1656
5 p.
artikel
428 Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD 2004
100-101 9-11 p. 1775-1780
6 p.
artikel
429 Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow Aubert, A.
2011
100-101 9-11 p. 1845-1849
5 p.
artikel
430 Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions Busatto, G.
2009
100-101 9-11 p. 1033-1037
5 p.
artikel
431 Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET Busatto, G.
2010
100-101 9-11 p. 1842-1847
6 p.
artikel
432 Experimental study of power MOSFET’s gate damage in radiation environment Busatto, G.
2006
100-101 9-11 p. 1854-1857
4 p.
artikel
433 Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout Berbel, N.
2011
100-101 9-11 p. 1564-1567
4 p.
artikel
434 Experiment and numerical analysis for edge and corner bonded PoP bottom package assemblies under four-point bending Shi, Hongbin
2011
100-101 9-11 p. 1850-1855
6 p.
artikel
435 Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III–V stacks using functional summary statistics Miranda, E.
2010
100-101 9-11 p. 1294-1297
4 p.
artikel
436 Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology Petersen, R.
2002
100-101 9-11 p. 1359-1363
5 p.
artikel
437 Extending the lifetime of power electronic assemblies by increased cooling temperatures Hutzler, Aaron
2013
100-101 9-11 p. 1774-1777
4 p.
artikel
438 Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles Ciappa, M.
2005
100-101 9-11 p. 1694-1699
6 p.
artikel
439 Extraction of 3D parasitic capacitances in 90nm and 22nm NAND flash memories Postel-Pellerin, J.
2009
100-101 9-11 p. 1056-1059
4 p.
artikel
440 Extraction of local thin-film solar cell parameters by bias-dependent IR-LBIC Boostandoost, M.
2010
100-101 9-11 p. 1899-1902
4 p.
artikel
441 Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties 2004
100-101 9-11 p. 1497-1501
5 p.
artikel
442 Fabrication process simulation and reliability improvement of high-brightness LEDs Chou, Tsung-Lin
2009
100-101 9-11 p. 1244-1249
6 p.
artikel
443 Facing the defect characterization and localization challenges of bridge defects on a submicronic technology (45nm and below) Celi, Guillaume
2010
100-101 9-11 p. 1499-1505
7 p.
artikel
444 Fail / recover / fail (F/R/F) failure mechanisms new trend 2004
100-101 9-11 p. 1571-1575
5 p.
artikel
445 Failure analyses for debug and ramp-up of modern IC’s Burmer, Christian
2006
100-101 9-11 p. 1486-1497
12 p.
artikel
446 Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process Torres Matabosch, N.
2013
100-101 9-11 p. 1659-1662
4 p.
artikel
447 Failure Analysis-assisted FMEA Cassanelli, G.
2006
100-101 9-11 p. 1795-1799
5 p.
artikel
448 Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing Aubert, A.
2010
100-101 9-11 p. 1688-1691
4 p.
artikel
449 Failure analysis defect location on a real case 55nm memory using dynamic power supply emulation Parrassin, Thierry
2011
100-101 9-11 p. 1646-1651
6 p.
artikel
450 Failure Analysis Issues in Microelectromechanical Systems (MEMS) Walraven, J.A.
2005
100-101 9-11 p. 1750-1757
8 p.
artikel
451 Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques Ben Naceur, W.
2013
100-101 9-11 p. 1375-1380
6 p.
artikel
452 Failure analysis of micro-heating elements suspended on thin membranes Briand, D.
2005
100-101 9-11 p. 1786-1789
4 p.
artikel
453 Failure analysis of RFIC amplifiers 2004
100-101 9-11 p. 1599-1604
6 p.
artikel
454 Failure Analysis of RuO2 Thick Film Chip Resistors 2004
100-101 9-11 p. 1763-1767
5 p.
artikel
455 Failure analysis of vertical cavity surface emission laser diodes 2004
100-101 9-11 p. 1593-1597
5 p.
artikel
456 Failure analysis of video processor defined as No Fault Found (NFF): Reproduction in system level and advanced analysis technique in IC level Jeong, Jae-Seong
2009
100-101 9-11 p. 1153-1157
5 p.
artikel
457 Failure analysis techniques for a 3D world Henderson, Christopher L.
2013
100-101 9-11 p. 1171-1178
8 p.
artikel
458 Failure causes generating aluminium protrusion/extrusion Jacob, Peter
2013
100-101 9-11 p. 1553-1557
5 p.
artikel
459 Failure mechanism of COF based Line Driver IC for Flat Panel Display by contamination Jeong, Jae-Seong
2010
100-101 9-11 p. 1488-1493
6 p.
artikel
460 Failure mechanism of trench IGBT under short-circuit after turn-off Benmansour, A.
2006
100-101 9-11 p. 1778-1783
6 p.
artikel
461 Failure mechanisms and qualification testing of passive components Post, H.A.
2005
100-101 9-11 p. 1626-1632
7 p.
artikel
462 Failure mechanisms in advanced BCD technology during reliability qualification van Hassel, J.G.
2011
100-101 9-11 p. 1697-1700
4 p.
artikel
463 Failure mechanisms of adhesive flip chip joints Seppälä, A.
2002
100-101 9-11 p. 1547-1550
4 p.
artikel
464 Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD) Diatta, M.
2009
100-101 9-11 p. 1103-1106
4 p.
artikel
465 Failure modes on low voltage power MOSFETs under high temperature application Dupont, L.
2007
100-101 9-11 p. 1767-1772
6 p.
artikel
466 Failure predictive model of capacitive RF-MEMS Mellé, S.
2005
100-101 9-11 p. 1770-1775
6 p.
artikel
467 Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities Perpiñà, X.
2007
100-101 9-11 p. 1784-1789
6 p.
artikel
468 Fast diffusers in a thermal gradient (solder ball) Lloyd, J.R.
2010
100-101 9-11 p. 1355-1358
4 p.
artikel
469 Faster IC Analysis with PICA Spatial Temporal Photon Correlation and CAD Autochanneling Desplats, R.
2003
100-101 9-11 p. 1663-1668
6 p.
artikel
470 Fast reliability analysis of combinatorial logic circuits using conditional probabilities Flaquer, J. Torras
2010
100-101 9-11 p. 1215-1218
4 p.
artikel
471 Fast reliability qualification of SiP products Regard, Charles
2009
100-101 9-11 p. 958-962
5 p.
artikel
472 Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling Nguyen, H.V.
2002
100-101 9-11 p. 1415-1420
6 p.
artikel
473 Fast thermal fatigue on top metal layer of power devices Russo, Sebastiano
2002
100-101 9-11 p. 1617-1622
6 p.
artikel
474 Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing Sasaki, K.
2013
100-101 9-11 p. 1766-1770
5 p.
artikel
475 Fault diagnosis technology based on transistor behavior analysis for physical analysis Sanada, M.
2006
100-101 9-11 p. 1575-1580
6 p.
artikel
476 Fault isolation in semiconductor product, process, physical and package failure analysis: Importance and overview Chin, Jiann Min
2011
100-101 9-11 p. 1440-1448
9 p.
artikel
477 Fault localization at high voltage devices using thermally induced voltage alteration (TIVA) Reissner, M.
2007
100-101 9-11 p. 1561-1564
4 p.
artikel
478 Feedback of MEMS reliability study on the design stage: a step toward Reliability Aided Design (RAD) Buchaillot, L.
2003
100-101 9-11 p. 1919-1928
10 p.
artikel
479 Femtosecond Laser Ablation for Backside Silicon Thinning 2004
100-101 9-11 p. 1605-1609
5 p.
artikel
480 Field-effect control of breakdown paths in HfO2 based MIM structures Saura, X.
2013
100-101 9-11 p. 1346-1350
5 p.
artikel
481 Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules Jeong, Jae-Seong
2007
100-101 9-11 p. 1795-1799
5 p.
artikel
482 Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors Jeong, Jae-Seong
2013
100-101 9-11 p. 1632-1637
6 p.
artikel
483 Field Failure Mechanism Investigation of GaAs based HBT Power Amplifier Mmodule (PAM) 2004
100-101 9-11 p. 1393-1398
6 p.
artikel
484 FIFA: A fault-injection–fault-analysis-based tool for reliability assessment at RTL level Naviner, L.A.B.
2011
100-101 9-11 p. 1459-1463
5 p.
artikel
485 FinFET and MOSFET preliminary comparison of gate oxide reliability Fernández, R.
2006
100-101 9-11 p. 1608-1611
4 p.
artikel
486 Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations Tiedemann, A.-K.
2009
100-101 9-11 p. 1165-1168
4 p.
artikel
487 Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices Delmonte, N.
2013
100-101 9-11 p. 1611-1616
6 p.
artikel
488 Finite element modeling of capacitive coupling voltage contrast Tan, Cher Ming
2007
100-101 9-11 p. 1555-1560
6 p.
artikel
489 First step in the reliability assessment of ultracapacitors used as power source in hybrid electric vehicles 2004
100-101 9-11 p. 1769-1773
5 p.
artikel
490 Flexible active cycle stress testing of smart power switches Glavanovics, Michael
2007
100-101 9-11 p. 1790-1794
5 p.
artikel
491 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses Martin, J.C.
2003
100-101 9-11 p. 1725-1730
6 p.
artikel
492 Foundry workflow for dynamic-EFA-based yield ramp Kardach, C.
2011
100-101 9-11 p. 1668-1672
5 p.
artikel
493 Frequency mapping in dynamic light emission with wavelet transform Chef, S.
2013
100-101 9-11 p. 1387-1392
6 p.
artikel
494 From component to system failure analysis – The future challenge within work-sharing supply chains Jacob, Peter
2011
100-101 9-11 p. 1618-1623
6 p.
artikel
495 From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to Dynamic Laser Testing Beaudoin, F.
2003
100-101 9-11 p. 1681-1686
6 p.
artikel
496 FTIR spectroscopy for the hermeticity assessment of micro-cavities Veyrié, D.
2005
100-101 9-11 p. 1764-1769
6 p.
artikel
497 Full ball shear metrology as defect detection and analysis tool for solder joint reliability assessment on direct immersion gold technology 2004
100-101 9-11 p. 1281-1285
5 p.
artikel
498 GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing Bensoussan, A.
2013
100-101 9-11 p. 1466-1470
5 p.
artikel
499 Gallium Artefacts on FIB-milled Silicon Samples 2004
100-101 9-11 p. 1583-1588
6 p.
artikel
500 Gamma radiation effects on RF MEMS capacitive switches Crunteanu, A.
2006
100-101 9-11 p. 1741-1746
6 p.
artikel
501 GaN-based HEMTs tested under high temperature storage test Marcon, D.
2011
100-101 9-11 p. 1717-1720
4 p.
artikel
502 GaN HEMT reliability del Alamo, J.A.
2009
100-101 9-11 p. 1200-1206
7 p.
artikel
503 Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses Alwan, M.
2007
100-101 9-11 p. 1406-1410
5 p.
artikel
504 Gate delay variability estimation method for parametric yield improvement in nanometer CMOS technology da Silva, Digeorgia
2010
100-101 9-11 p. 1223-1229
7 p.
artikel
505 Gate oxide breakdown characterization on 0.13μm CMOS technology Faure, D.
2003
100-101 9-11 p. 1519-1523
5 p.
artikel
506 Gate oxide Reliability assessment optimization Monsieur, F.
2002
100-101 9-11 p. 1505-1508
4 p.
artikel
507 Gate stress effect on low temperature data retention characteristics of split-gate flash memories Hu, Ling-Chang
2005
100-101 9-11 p. 1331-1336
6 p.
artikel
508 Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides Pompl, T.
2006
100-101 9-11 p. 1603-1607
5 p.
artikel
509 Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability Curro, G.
2002
100-101 9-11 p. 1659-1662
4 p.
artikel
510 HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors Huang, Ru
2011
100-101 9-11 p. 1515-1520
6 p.
artikel
511 Heat management for power converters in sealed enclosures: A numerical study Bernardoni, Mirko
2009
100-101 9-11 p. 1293-1298
6 p.
artikel
512 High brightness GaN LEDs degradation during dc and pulsed stress Meneghini, M.
2006
100-101 9-11 p. 1720-1724
5 p.
artikel
513 High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects Belhaj, M.
2003
100-101 9-11 p. 1731-1736
6 p.
artikel
514 High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT’s Kuchenbecker, J.
2003
100-101 9-11 p. 1719-1723
5 p.
artikel
515 High-field step-stress and long term stability of PHEMTs with different gate and recess lengths Cova, P.
2002
100-101 9-11 p. 1587-1592
6 p.
artikel
516 High optical strength GaAs-based laser structures Bettiati, Mauro A.
2013
100-101 9-11 p. 1496-1500
5 p.
artikel
517 High power reliability aspects on RF MEMS varactor design Palego, C.
2006
100-101 9-11 p. 1705-1710
6 p.
artikel
518 High-κ related reliability issues in advanced non-volatile memories Larcher, L.
2010
100-101 9-11 p. 1251-1258
8 p.
artikel
519 High reliability level demonstrated on 980nm laser diode Van de Casteele, J.
2003
100-101 9-11 p. 1751-1754
4 p.
artikel
520 High reliable high power diode for welding applications 2004
100-101 9-11 p. 1437-1441
5 p.
artikel
521 High-resolution SILC measurements of thin SiO2 at ultra low voltages Aresu, S.
2002
100-101 9-11 p. 1485-1489
5 p.
artikel
522 High temperature electro-optical degradation of InGaN/GaN HBLEDs Meneghini, M.
2007
100-101 9-11 p. 1625-1629
5 p.
artikel
523 High temperature gate-bias and reverse-bias tests on SiC MOSFETs Yang, L.
2013
100-101 9-11 p. 1771-1773
3 p.
artikel
524 High temperature long term stability of SiC Schottky diodes Testa, A.
2011
100-101 9-11 p. 1778-1782
5 p.
artikel
525 High temperature reliability on automotive power modules verified by power cycling tests up to 150°C Coquery, G.
2003
100-101 9-11 p. 1871-1876
6 p.
artikel
526 High voltage transistor degradation in NVM pump application Bottini, R.
2007
100-101 9-11 p. 1384-1388
5 p.
artikel
527 Holding voltage investigation of advanced SCR-based protection structures for CMOS technology Tazzoli, A.
2007
100-101 9-11 p. 1444-1449
6 p.
artikel
528 Hot carrier aging degradation phenomena in GaN based MESFETs 2004
100-101 9-11 p. 1375-1380
6 p.
artikel
529 Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications Xiao, E.
2005
100-101 9-11 p. 1382-1385
4 p.
artikel
530 Hot-carrier degradation analysis based on ring oscillators Wang, Jingchao
2006
100-101 9-11 p. 1858-1863
6 p.
artikel
531 Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs Rafí, J.M.
2006
100-101 9-11 p. 1657-1663
7 p.
artikel
532 Hot carrier reliability of RF N- LDMOS for S Band radar application Gares, M.
2006
100-101 9-11 p. 1806-1811
6 p.
artikel
533 Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology Rey-Tauriac, Y.
2005
100-101 9-11 p. 1349-1354
6 p.
artikel
534 Hot electron induced punchthrough voltage of p-channel SOI MOSFET’s at room and elevated temperatures Re Na Yun, Se
2003
100-101 9-11 p. 1477-1482
6 p.
artikel
535 “Hot-plugging” of LED modules: Electrical characterization and device degradation Dal Lago, M.
2013
100-101 9-11 p. 1524-1528
5 p.
artikel
536 Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET’s Castellazzi, A.
2003
100-101 9-11 p. 1877-1882
6 p.
artikel
537 How future automotive functional safety requirements will impact microprocessors design Bellotti, M.
2010
100-101 9-11 p. 1320-1326
7 p.
artikel
538 How reliable are reliability tests? Tielemans, L.
2002
100-101 9-11 p. 1339-1345
7 p.
artikel
539 How supercapacitors reach end of life criteria during calendar life and power cycling tests Chaari, R.
2011
100-101 9-11 p. 1976-1979
4 p.
artikel
540 How to study delamination in plastic encapsulated devices 2004
100-101 9-11 p. 1311-1316
6 p.
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541 Humidity study of a-Si PV cell Tan, Cher Ming
2010
100-101 9-11 p. 1871-1874
4 p.
artikel
542 Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide Nelhiebel, M.
2005
100-101 9-11 p. 1355-1359
5 p.
artikel
543 Hydrogen-related reliability issues for advanced microelectronics Fleetwood, D.M.
2002
100-101 9-11 p. 1397-1403
7 p.
artikel
544 Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements Gao, Y.
2007
100-101 9-11 p. 1456-1461
6 p.
artikel
545 Identifying electrical mechanisms responsible for functional failures during harsh external ESD and EMC aggression Besse, P.
2011
100-101 9-11 p. 1597-1601
5 p.
artikel
546 IGBT chip current imaging system by scanning local magnetic field Shiratsuchi, Hiroaki
2013
100-101 9-11 p. 1409-1412
4 p.
artikel
547 IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power? Azzopardi, S.
2003
100-101 9-11 p. 1901-1906
6 p.
artikel
548 IGBT RBSOA non-destructive testing methods: Analysis and discussion Abbate, Carmine
2010
100-101 9-11 p. 1731-1737
7 p.
artikel
549 Image alignment for 3D reconstruction in a SEM Pintus, Ruggero
2005
100-101 9-11 p. 1581-1584
4 p.
artikel
550 Imaging and Material Analysis from Sputter-Induced Light Emission Using Coaxial Ion-Photon Column Tsao, Chun-Cheng
2002
100-101 9-11 p. 1667-1672
6 p.
artikel
551 Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress Galy, Ph.
2009
100-101 9-11 p. 1107-1110
4 p.
artikel
552 Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors Lee, Seung Min
2013
100-101 9-11 p. 1329-1332
4 p.
artikel
553 Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors Sangameswaran, Sandeep
2010
100-101 9-11 p. 1383-1387
5 p.
artikel
554 Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs Chini, A.
2013
100-101 9-11 p. 1461-1465
5 p.
artikel
555 Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs Pobegen, Gregor
2011
100-101 9-11 p. 1530-1534
5 p.
artikel
556 Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests German, R.
2013
100-101 9-11 p. 1643-1647
5 p.
artikel
557 Impact of irregular geometries on low-k dielectric breakdown Bashir, Muhammad
2011
100-101 9-11 p. 1582-1586
5 p.
artikel
558 Impact of load pulse duration on power cycling lifetime of Al wire bonds Scheuermann, U.
2013
100-101 9-11 p. 1687-1691
5 p.
artikel
559 Impact of 1.55 μm laser diode degradation laws on fibre optic system performances using a system simulator Mendizabal, L.
2003
100-101 9-11 p. 1743-1749
7 p.
artikel
560 Impact of modularity and redundancy in optimising the reliability of power systems that include a large number of power converters Siemaszko, Daniel
2011
100-101 9-11 p. 1484-1488
5 p.
artikel
561 Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis Chen, Chang-Chih
2013
100-101 9-11 p. 1183-1188
6 p.
artikel
562 Impact of negative bias temperature instability on the single-event upset threshold of a 65nm SRAM cell El Moukhtari, I.
2013
100-101 9-11 p. 1325-1328
4 p.
artikel
563 Impact of O–Si–O bond angle fluctuations on the Si–O bond-breakage rate Tyaginov, Stanislav
2009
100-101 9-11 p. 998-1002
5 p.
artikel
564 Impact of semiconductors material on IR Laser Stimulation signal Firiti, A.
2005
100-101 9-11 p. 1465-1470
6 p.
artikel
565 Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM Lorenzi, P.
2013
100-101 9-11 p. 1203-1207
5 p.
artikel
566 Impact of the space environmental conditions on the reliability of a MEMS COTS based system 2004
100-101 9-11 p. 1739-1744
6 p.
artikel
567 Impact of total dose on heavy-ion upsets in floating gate arrays Gerardin, S.
2010
100-101 9-11 p. 1837-1841
5 p.
artikel
568 Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation Hayama, K.
2006
100-101 9-11 p. 1731-1735
5 p.
artikel
569 Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs Bravaix, A.
2005
100-101 9-11 p. 1370-1375
6 p.
artikel
570 Implementation of TRE systems into Emission Microscopes 2004
100-101 9-11 p. 1529-1534
6 p.
artikel
571 Importance of multi-temp testing in automotive qualification and zero defects program Wang, Z.
2007
100-101 9-11 p. 1358-1361
4 p.
artikel
572 Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping Tao, Jun-Yong
2013
100-101 9-11 p. 1667-1671
5 p.
artikel
573 Improved physical understanding of intermittent failure in continuous monitoring method Filho, W.C. Maia
2006
100-101 9-11 p. 1886-1891
6 p.
artikel
574 Improved thermal management of low voltage power devices with optimized bond wire positions Köck, Helmut
2011
100-101 9-11 p. 1913-1918
6 p.
artikel
575 Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD) Ronsisvalle, C.
2010
100-101 9-11 p. 1773-1777
5 p.
artikel
576 Improving performance and reliability of NOR-Flash arrays by using pulsed operation Chimenton, A.
2006
100-101 9-11 p. 1478-1481
4 p.
artikel
577 Improving SiC lateral DMOSFET reliability under high field stress Ayalew, T.
2003
100-101 9-11 p. 1889-1894
6 p.
artikel
578 Increased hot carrier effects in Gate-All-Around SOI nMOSFET’s Tae Park, Jong
2003
100-101 9-11 p. 1427-1432
6 p.
artikel
579 Induced degradation on c-Si solar cells for concentration terrestrial applications Lancellotti, Laura
2010
100-101 9-11 p. 1903-1906
4 p.
artikel
580 Influence and model of gate oxide breakdown on CMOS inverters Rodrı́guez, R.
2003
100-101 9-11 p. 1439-1444
6 p.
artikel
581 Influence of air gaps on the thermal–electrical–mechanical behavior of a copper metallization Bauer, Irina
2011
100-101 9-11 p. 1587-1591
5 p.
artikel
582 Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2 Kolkovsky, Vl.
2013
100-101 9-11 p. 1342-1345
4 p.
artikel
583 Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Karboyan, S.
2013
100-101 9-11 p. 1491-1495
5 p.
artikel
584 Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices Fadlallah, M.
2003
100-101 9-11 p. 1433-1438
6 p.
artikel
585 Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors Davidović, V.
2007
100-101 9-11 p. 1841-1845
5 p.
artikel
586 Influence of test structure design on stress-induced-voiding using an experimentally validated Finite Element Modeling approach Lofrano, M.
2011
100-101 9-11 p. 1578-1581
4 p.
artikel
587 Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs Poller, T.
2013
100-101 9-11 p. 1755-1759
5 p.
artikel
588 Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs Velayudhan, V.
2013
100-101 9-11 p. 1243-1246
4 p.
artikel
589 Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM Lanza, M.
2007
100-101 9-11 p. 1424-1428
5 p.
artikel
590 Influence of the thermo-mechanical residual state on the power assembly modellization 2004
100-101 9-11 p. 1331-1335
5 p.
artikel
591 Influence of the turn-on mechanism on TRIACs’ reliability: di/dt thermal fatigue study in Q1 compared to Q2 Moreau, S.
2002
100-101 9-11 p. 1663-1666
4 p.
artikel
592 Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities Bénard, Christelle
2009
100-101 9-11 p. 1008-1012
5 p.
artikel
593 Initial stage of silver electrochemical migration degradation Yang, S.
2006
100-101 9-11 p. 1915-1921
7 p.
artikel
594 Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue Khong, B.
2005
100-101 9-11 p. 1717-1722
6 p.
artikel
595 Innovative packaging technique for backside optical testing of wire-bonded chips Tosi, A.
2005
100-101 9-11 p. 1493-1498
6 p.
artikel
596 Inside front cover - Editorial board 2009
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597 Inside front cover - Editorial board 2011
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598 Inside front cover - Editorial board 2013
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599 Inside front cover - Editorial board 2010
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artikel
600 Instable mechanisms during unclamped operation of high power IGBT modules Busatto, G.
2009
100-101 9-11 p. 1363-1369
7 p.
artikel
601 Integrated thermo-mechanical design and qualification of wafer backend structures 2004
100-101 9-11 p. 1349-1354
6 p.
artikel
602 Interactive and non-destructive verification of sram-descrambling with laser 2004
100-101 9-11 p. 1669-1674
6 p.
artikel
603 Interface traps density-of-states as a vital component for hot-carrier degradation modeling Tyaginov, S.E.
2010
100-101 9-11 p. 1267-1272
6 p.
artikel
604 Intermittent-contact capacitance spectroscopy – A new method for determining C(V) curves with sub-micron lateral resolution Biberger, Roland
2010
100-101 9-11 p. 1511-1513
3 p.
artikel
605 Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profiling Breitschopf, Peter
2005
100-101 9-11 p. 1568-1571
4 p.
artikel
606 Intrinsic bonding defects in transition metal elemental oxides Lucovsky, G.
2006
100-101 9-11 p. 1623-1628
6 p.
artikel
607 Inventory of silicon signatures induced by CDM event on deep sub-micronic CMOS–BICMOS technologies Galy, Ph.
2010
100-101 9-11 p. 1388-1392
5 p.
artikel
608 Inversion of degradation direction of n-channel MOS-FETs in off-state operation Muehlhoff, A.
2002
100-101 9-11 p. 1453-1456
4 p.
artikel
609 Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test Massenz, A.
2011
100-101 9-11 p. 1887-1891
5 p.
artikel
610 Investigation of a new method for dopant characterization Adrian, J.
2007
100-101 9-11 p. 1599-1603
5 p.
artikel
611 Investigation of charging mechanisms in metal-insulator-metal structures Exarchos, M.
2005
100-101 9-11 p. 1782-1785
4 p.
artikel
612 Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs Exarchos, M.A.
2009
100-101 9-11 p. 1018-1023
6 p.
artikel
613 Investigation of delaminations during thermal stress: scanning acoustic microscopy covering low and high temperatures Rajamand, P.
2003
100-101 9-11 p. 1815-1820
6 p.
artikel
614 Investigation of dynamic disturbance quantities in piezoresistive silicon sensors Hoa, Phan L.P.
2002
100-101 9-11 p. 1819-1822
4 p.
artikel
615 Investigation of IGBT turn-on failure under high applied voltage operation 2004
100-101 9-11 p. 1431-1436
6 p.
artikel
616 Investigation of low temperature SRAM and ROM failures to enable the replacement of cold test insertion by room temperature test Müller, Stefan
2007
100-101 9-11 p. 1362-1365
4 p.
artikel
617 Investigation of moisture-induced failures of stacked-die package Kim, Hak Sung
2007
100-101 9-11 p. 1673-1679
7 p.
artikel
618 Investigation of MOSFET failure in soft-switching conditions Iannuzzo, F.
2006
100-101 9-11 p. 1790-1794
5 p.
artikel
619 Investigation of open bond wires in MEMS devices Keller, C.
2010
100-101 9-11 p. 1697-1699
3 p.
artikel
620 Investigation of Sensitivity Improvement on Passive Voltage Contrast for Defect Isolation Lee, Jon C.
2002
100-101 9-11 p. 1707-1710
4 p.
artikel
621 Investigation of SEU sensitivity of Xilinx Virtex II FPGA by pulsed laser fault injections 2004
100-101 9-11 p. 1709-1714
6 p.
artikel
622 Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation Bychikhin, S.
2010
100-101 9-11 p. 1427-1430
4 p.
artikel
623 Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling Ciptokusumo, Johar
2009
100-101 9-11 p. 1090-1095
6 p.
artikel
624 Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design Ghosh, S.
2011
100-101 9-11 p. 1736-1741
6 p.
artikel
625 Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM) Lee, T.H.
2002
100-101 9-11 p. 1711-1714
4 p.
artikel
626 Investigation on BIST assisted failure analysis on digital integrated circuits Hartmann, C.
2010
100-101 9-11 p. 1464-1468
5 p.
artikel
627 Investigation on marginal failure characteristics and related defects analysed by soft defect localization Hartmann, C.
2009
100-101 9-11 p. 1137-1142
6 p.
artikel
628 Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technology Chen, Shih-Hung
2005
100-101 9-11 p. 1311-1316
6 p.
artikel
629 Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications Ousten, J.P.
2011
100-101 9-11 p. 1830-1835
6 p.
artikel
630 Investigations on junction temperature estimation based on junction voltage measurements Khatir, Z.
2010
100-101 9-11 p. 1506-1510
5 p.
artikel
631 IR confocal laser microscopy for MEMS Technological Evaluation Lellouchi, D.
2002
100-101 9-11 p. 1815-1817
3 p.
artikel
632 IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures Köck, Helmut
2009
100-101 9-11 p. 1132-1136
5 p.
artikel
633 Isolating failing sites in IC packages using time domain reflectometry: Case studies Abessolo-Bidzo, D.
2005
100-101 9-11 p. 1639-1644
6 p.
artikel
634 Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility Sicard, E.
2005
100-101 9-11 p. 1277-1284
8 p.
artikel
635 Jitter analysis of PLL-generated clock propagation using Jitter Mitigation techniques with laser voltage probing Liao, Joy Y.
2009
100-101 9-11 p. 1127-1131
5 p.
artikel
636 Kelvin probe force microscopy – An appropriate tool for the electrical characterisation of LED heterostructures Bergbauer, W.
2006
100-101 9-11 p. 1736-1740
5 p.
artikel
637 Laser-assisted decapsulation of plastic-encapsulated devices Krüger, M.
2003
100-101 9-11 p. 1827-1831
5 p.
artikel
638 Laser induced impact ionization effect in MOSFET during 1064nm laser stimulation Brahma, Sanjib Kumar
2011
100-101 9-11 p. 1652-1657
6 p.
artikel
639 Laser modulation mapping on an unmodified laser scanning microscope Zachariasse, Frank
2010
100-101 9-11 p. 1417-1421
5 p.
artikel
640 Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods. Dilhaire, Stefan
2003
100-101 9-11 p. 1609-1613
5 p.
artikel
641 Laser THz emission microscope as a novel tool for LSI failure analysis Yamashita, Masatsugu
2009
100-101 9-11 p. 1116-1126
11 p.
artikel
642 Latchup Analysis Using Emission Microscopy Stellari, Franco
2003
100-101 9-11 p. 1603-1608
6 p.
artikel
643 Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability Li, Y.-L.
2005
100-101 9-11 p. 1299-1304
6 p.
artikel
644 LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing Wu, J.
2013
100-101 9-11 p. 1273-1277
5 p.
artikel
645 Leakage current, active power, and delay analysis of dynamic dual Vt CMOS circuits under P–V–T fluctuations Wang, Jinhui
2011
100-101 9-11 p. 1498-1502
5 p.
artikel
646 Leakage paths identification in NVM using biased data retention Postel-Pellerin, J.
2010
100-101 9-11 p. 1474-1478
5 p.
artikel
647 Life expectancy and characterization of capacitive RF MEMS switches Matmat, M.
2010
100-101 9-11 p. 1692-1696
5 p.
artikel
648 Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs Martín-Martínez, J.
2007
100-101 9-11 p. 1349-1352
4 p.
artikel
649 Life-time estimation of high-power blue light-emitting diode chips Kang, Jeung-Mo
2009
100-101 9-11 p. 1231-1235
5 p.
artikel
650 Lifetime modeling of intrinsic gate oxide breakdown at high temperature Moonen, R.
2007
100-101 9-11 p. 1389-1393
5 p.
artikel
651 Lifetime prediction on the base of mission profiles Ciappa, Mauro
2005
100-101 9-11 p. 1293-1298
6 p.
artikel
652 Lift-out techniques coupled with advanced TEM characterization methods for electrical failure analysis Bicaı̈is-Lépinay, N.
2002
100-101 9-11 p. 1747-1752
6 p.
artikel
653 Light Emission From Small Technologies. Are Silicon Based Detectors Reaching Their Limits? 2004
100-101 9-11 p. 1715-1720
6 p.
artikel
654 Light Emission to Time Resolved Emission For IC Debug and Failure Analysis Remmach, M.
2005
100-101 9-11 p. 1476-1481
6 p.
artikel
655 Limitations to photon-emission microscopy when applied to “hot” devices Deslandes, Hervé
2003
100-101 9-11 p. 1645-1650
6 p.
artikel
656 Localization and physical analysis of a complex SRAM failure in 90nm technology Qian, Zhongling
2006
100-101 9-11 p. 1558-1562
5 p.
artikel
657 Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products Neumann, G.
2005
100-101 9-11 p. 1520-1525
6 p.
artikel
658 Localization of FET Device Performance with Thermal Laser Stimulation 2004
100-101 9-11 p. 1699-1702
4 p.
artikel
659 Localization of Marginal Circuits for Yield Diagnostics Utilizing a Dynamic Laser Stimulation Probing System Liao, J.Y.
2005
100-101 9-11 p. 1554-1557
4 p.
artikel
660 Localization of sensitive areas of power AC switch under thermal laser stimulation Debleds, S.
2007
100-101 9-11 p. 1569-1573
5 p.
artikel
661 Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles Perpiñà, X.
2007
100-101 9-11 p. 1701-1706
6 p.
artikel
662 Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations 2004
100-101 9-11 p. 1625-1629
5 p.
artikel
663 Lock-in thermal IR imaging using a solid immersion lens Breitenstein, O.
2006
100-101 9-11 p. 1508-1513
6 p.
artikel
664 Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project Ben Dhia, S.
2013
100-101 9-11 p. 1266-1272
7 p.
artikel
665 Long-term reliability of silicon bipolar transistors subjected to low constraints Crosson, A.
2007
100-101 9-11 p. 1590-1594
5 p.
artikel
666 Lot reliability issues in commercial off the shelf (COTS) microelectronic devices Mura, G.
2009
100-101 9-11 p. 1196-1199
4 p.
artikel
667 Low-cost backside laser test method to pre-characterize the COTS IC’s sensitivity to Single Event Effects. Darracq, F.
2003
100-101 9-11 p. 1615-1619
5 p.
artikel
668 Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates Curutchet, A.
2003
100-101 9-11 p. 1713-1718
6 p.
artikel
669 Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors 2004
100-101 9-11 p. 1361-1368
8 p.
artikel
670 Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications 2004
100-101 9-11 p. 1781-1786
6 p.
artikel
671 LVI detection on passive structure in advance CMOS technology: New opportunities for device analysis Celi, Guillaume
2011
100-101 9-11 p. 1662-1667
6 p.
artikel
672 Magnetic emission mapping for passive integrated components characterisation Crépel, O.
2003
100-101 9-11 p. 1809-1814
6 p.
artikel
673 Magnetic field measurements for Non Destructive Failure Analysis Crépel, O.
2002
100-101 9-11 p. 1763-1766
4 p.
artikel
674 Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization Infante, F.
2011
100-101 9-11 p. 1684-1688
5 p.
artikel
675 Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package Infante, F.
2009
100-101 9-11 p. 1169-1174
6 p.
artikel
676 Magnetic microscopy for ground plane current detection: a fast and reliable technique for current leakage localization by means of magnetic simulations Infante, F.
2010
100-101 9-11 p. 1700-1705
6 p.
artikel
677 Magnetic Microscopy for IC Failure Analysis: Comparative Case Studies using SQUID, GMR and MTJ systems 2004
100-101 9-11 p. 1559-1563
5 p.
artikel
678 MALTY––A memory test structure for analysis in the early phase of the technology development Nirschl, Th.
2003
100-101 9-11 p. 1383-1387
5 p.
artikel
679 Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress Joly, Y.
2011
100-101 9-11 p. 1561-1563
3 p.
artikel
680 Measurement and simulation of interfacial adhesion strength between SiO2 thin film and III–V material Chou, Tsung-Lin
2011
100-101 9-11 p. 1757-1761
5 p.
artikel
681 Measurement of the transient junction temperature in MOSFET devices under operating conditions Barlini, D.
2007
100-101 9-11 p. 1707-1712
6 p.
artikel
682 Mechanical and thermal reliability of printed organic thin-film transistor Boddaert, X.
2010
100-101 9-11 p. 1884-1887
4 p.
artikel
683 Mechanical reliability challenges for MEMS packages: Capping van Driel, W.D.
2007
100-101 9-11 p. 1823-1826
4 p.
artikel
684 Mechanical Reliability of Silicon Wafers with Through-Wafer Vias for Wafer-Level Packaging Polyakov, A.
2002
100-101 9-11 p. 1783-1788
6 p.
artikel
685 Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect Weber, Y.
2011
100-101 9-11 p. 1908-1912
5 p.
artikel
686 Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs Stojadinovic, N.
2002
100-101 9-11 p. 1465-1468
4 p.
artikel
687 MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities Charvet, P.-L.
2013
100-101 9-11 p. 1622-1627
6 p.
artikel
688 MEMS reliability modelling methodology: application to wobble micromotor failure analysis. Muratet, S.
2003
100-101 9-11 p. 1945-1949
5 p.
artikel
689 MEMS reliability: Where are we now? Tanner, D.M.
2009
100-101 9-11 p. 937-940
4 p.
artikel
690 MEMS technology integrated in the CMOS back end Gaddi, R.
2010
100-101 9-11 p. 1593-1598
6 p.
artikel
691 Metal migration in epoxy encapsulated ECL devices 2004
100-101 9-11 p. 1323-1330
8 p.
artikel
692 Methodology for improvement of data retention in floating gate flash memory using leakage current estimation Moon, Pyung
2013
100-101 9-11 p. 1338-1341
4 p.
artikel
693 Methodology to determine the impact of linewidth variation on chip scale copper/low-k backend dielectric breakdown Bashir, Muhammad
2010
100-101 9-11 p. 1341-1346
6 p.
artikel
694 Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant Guédon, Alexandrine
2003
100-101 9-11 p. 1853-1858
6 p.
artikel
695 Methods to improve reliability of bulge test technique to extract mechanical properties of thin films Youssef, H.
2010
100-101 9-11 p. 1888-1893
6 p.
artikel
696 2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness Rafí, J.M.
2013
100-101 9-11 p. 1333-1337
5 p.
artikel
697 Microscopic aspects of defect generation in SiO2 Feruglio, Ruggero
2002
100-101 9-11 p. 1427-1432
6 p.
artikel
698 Microscopic stress simulation of non-planar chip technologies Zarbakhsh, Javad
2010
100-101 9-11 p. 1666-1671
6 p.
artikel
699 Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules Pedersen, Kristian Bonderup
2013
100-101 9-11 p. 1422-1426
5 p.
artikel
700 Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage Berthou, M.
2009
100-101 9-11 p. 1267-1272
6 p.
artikel
701 Mie-Grüneisen Analysis of the Molecular Bonding States in Silica Which Impact Time-Dependent Dielectric Breakdown 2004
100-101 9-11 p. 1491-1496
6 p.
artikel
702 Migration induced material transport in Cu–Sn IMC and SnAgCu microbumps Meinshausen, L.
2011
100-101 9-11 p. 1860-1864
5 p.
artikel
703 Migration issues in sintered-silver die attaches operating at high temperature Riva, R.
2013
100-101 9-11 p. 1592-1596
5 p.
artikel
704 Modeling charge variation during data retention of MLC Flash memories Postel-Pellerin, J.
2009
100-101 9-11 p. 1060-1063
4 p.
artikel
705 Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET Michez, A.
2013
100-101 9-11 p. 1306-1310
5 p.
artikel
706 Modeling of dielectric charging in electrostatic MEMS switches Koszewski, A.
2010
100-101 9-11 p. 1609-1614
6 p.
artikel
707 Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices Gehring, A.
2003
100-101 9-11 p. 1495-1500
6 p.
artikel
708 Modeling of the breakdown mechanisms for porous copper/low-k process flows Hong, Changsoo
2007
100-101 9-11 p. 1478-1482
5 p.
artikel
709 Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy Ciappa, Mauro
2010
100-101 9-11 p. 1407-1412
6 p.
artikel
710 Modeling the effect of barrier thickness and low-k dielectric on circuit reliability using 3D model He, Feifei
2010
100-101 9-11 p. 1327-1331
5 p.
artikel
711 Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter Berbel, N.
2009
100-101 9-11 p. 1048-1051
4 p.
artikel
712 Modern IC packaging trends and their reliability implications Plieninger, R.
2006
100-101 9-11 p. 1868-1873
6 p.
artikel
713 Moisture diffusion in BCB resins used for MEMS packaging Tetelin, A.
2003
100-101 9-11 p. 1939-1944
6 p.
artikel
714 Moisture diffusion in Printed Circuit Boards: Measurements and Finite- Element- Simulations Weide-Zaage, Kirsten
2005
100-101 9-11 p. 1662-1667
6 p.
artikel
715 Molecular simulation on the material/interfacial strength of the low-dielectric materials Yuan, Cadmus A.
2007
100-101 9-11 p. 1483-1491
9 p.
artikel
716 Monitoring fading rate of ultracapacitors using online characterization during power cycling Lajnef, W.
2007
100-101 9-11 p. 1751-1755
5 p.
artikel
717 MOS-IGBT power devices for high-temperature operation in smart power SOI technology Arbess, H.
2011
100-101 9-11 p. 1980-1984
5 p.
artikel
718 MTF test system with AC based dynamic joule correction for electromigration tests on interconnects 2004
100-101 9-11 p. 1849-1854
6 p.
artikel
719 Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling Trinh, S.
2003
100-101 9-11 p. 1537-1543
7 p.
artikel
720 Multiple-time-instant 2D thermal mapping during a single ESD event 2004
100-101 9-11 p. 1793-1798
6 p.
artikel
721 Multiscale modelling of multilayer substrates Ubachs, R.L.J.M.
2006
100-101 9-11 p. 1472-1477
6 p.
artikel
722 Multiscale simulation of aluminum thin films for the design of highly-reliable MEMS devices Kubo, Haruka
2009
100-101 9-11 p. 1278-1282
5 p.
artikel
723 Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniques Fakhri, M.
2010
100-101 9-11 p. 1459-1463
5 p.
artikel
724 NBTI and hot carrier effect of Schottky-barrier p-MOSFETs Kim, Jin-Young
2010
100-101 9-11 p. 1290-1293
4 p.
artikel
725 NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer Jeon, Yong Woo
2009
100-101 9-11 p. 994-997
4 p.
artikel
726 NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs Lee, Chi-Woo
2009
100-101 9-11 p. 1044-1047
4 p.
artikel
727 NBTI degradation effect on advanced-process 45nm high-k PMOSFETs with geometric and process variations Hatta, S.F. Wan Muhamad
2010
100-101 9-11 p. 1283-1289
7 p.
artikel
728 NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions Manić, I.
2011
100-101 9-11 p. 1540-1543
4 p.
artikel
729 NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs Danković, D.
2006
100-101 9-11 p. 1828-1833
6 p.
artikel
730 Near-field EMC study to improve electronic component reliability Duchamp, G.
2007
100-101 9-11 p. 1668-1672
5 p.
artikel
731 Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs Danković, D.
2007
100-101 9-11 p. 1400-1405
6 p.
artikel
732 Negative bias temperature instability mechanisms in p-channel power VDMOSFETs Stojadinović, N.
2005
100-101 9-11 p. 1343-1348
6 p.
artikel
733 Negative bias temperature stress on low voltage p-channel DMOS transistors and the role of nitrogen Gamerith, S.
2002
100-101 9-11 p. 1439-1443
5 p.
artikel
734 Net integrity checking by optical localization techniques Haller, G.
2009
100-101 9-11 p. 1175-1181
7 p.
artikel
735 New aspects in characterization of adhesion of moulding compounds on different surfaces by using a simple button-shear-test method for lifetime prediction of power devices Goroll, Michael
2010
100-101 9-11 p. 1684-1687
4 p.
artikel
736 New developments of THERMOS3, a tool for 3D electro-thermal simulation of smart power MOSFETs Irace, Andrea
2007
100-101 9-11 p. 1696-1700
5 p.
artikel
737 New experimental approach for failure prediction in electronics: Topography and deformation measurement complemented with acoustic microscopy Richard, Isaline
2005
100-101 9-11 p. 1645-1651
7 p.
artikel
738 New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors Lee, In Kyung
2006
100-101 9-11 p. 1864-1867
4 p.
artikel
739 New method of qualification applied to optical amplifier with electronics Gautier, C.
2003
100-101 9-11 p. 1761-1766
6 p.
artikel
740 New qualification approach for optoelectronic components Goudard, J.-L.
2002
100-101 9-11 p. 1307-1310
4 p.
artikel
741 New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions Barlini, D.
2006
100-101 9-11 p. 1772-1777
6 p.
artikel
742 New trends in the application of Scanning Probe Techniques in Failure Analysis 2004
100-101 9-11 p. 1541-1546
6 p.
artikel
743 Next generation of Deep Trench Isolation for Smart Power technologies with 120V high-voltage devices Charavel, R.
2010
100-101 9-11 p. 1758-1762
5 p.
artikel
744 NIR laser stimulation for dynamic timing analysis Sanchez, K.
2005
100-101 9-11 p. 1459-1464
6 p.
artikel
745 Non destructive control of flip chip packages for space applications 2004
100-101 9-11 p. 1355-1359
5 p.
artikel
746 Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy Schlangen, R.
2007
100-101 9-11 p. 1523-1528
6 p.
artikel
747 Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement Busatto, G.
2003
100-101 9-11 p. 1907-1912
6 p.
artikel
748 Non-destructive high temperature characterisation of high-voltage IGBTs Busatto, G.
2002
100-101 9-11 p. 1635-1640
6 p.
artikel
749 Non-destructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist Tan, Cher Ming
2005
100-101 9-11 p. 1572-1575
4 p.
artikel
750 Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations Iannuzzo, Francesco
2005
100-101 9-11 p. 1738-1741
4 p.
artikel
751 [No title] Labat, Nathalie
2003
100-101 9-11 p. 1351-1352
2 p.
artikel
752 [No title] Labat, N.
2005
100-101 9-11 p. 1275-1276
2 p.
artikel
753 [No title] Ciappa, Mauro
2004
100-101 9-11 p. xi-
1 p.
artikel
754 Novel accelerated testing method for III–V concentrator solar cells Núñez, N.
2010
100-101 9-11 p. 1880-1883
4 p.
artikel
755 Novel ESD strategy for high voltage non-volatile programming pin application Im, Kyoung-Sik
2006
100-101 9-11 p. 1664-1668
5 p.
artikel
756 Novel FIB-based sample preparation technique for TEM analysis of ultra-thin gate oxide breakdown Reiner, Joachim C.
2002
100-101 9-11 p. 1753-1757
5 p.
artikel
757 Numerical analysis and comparative study of short circuit stress in IGBTs devices (IR, IXYS) Benbahouche, Ly.
2007
100-101 9-11 p. 1773-1778
6 p.
artikel
758 Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity Altes, A.
2006
100-101 9-11 p. 1525-1529
5 p.
artikel
759 Numerical prediction of failure paths at a roughened metal/polymer interface Noijen, S.P.M.
2009
100-101 9-11 p. 1315-1318
4 p.
artikel
760 OBIRCH analysis of electrically stressed advanced graphic ICs Liao, J.Y.
2007
100-101 9-11 p. 1565-1568
4 p.
artikel
761 Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique Goto, Yasunori
2013
100-101 9-11 p. 1370-1374
5 p.
artikel
762 On-chip circuit to monitor long-term NBTI and PBTI degradation Jenkins, Keith A.
2013
100-101 9-11 p. 1252-1256
5 p.
artikel
763 On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress Caigneť, F.
2013
100-101 9-11 p. 1278-1283
6 p.
artikel
764 On state breakdown in PHEMTs and its temperature dependence Cova, P.
2005
100-101 9-11 p. 1605-1610
6 p.
artikel
765 On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices Mura, G.
2003
100-101 9-11 p. 1771-1776
6 p.
artikel
766 On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs 2004
100-101 9-11 p. 1643-1647
5 p.
artikel
767 On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies Zaghloul, Usama
2011
100-101 9-11 p. 1810-1818
9 p.
artikel
768 On the reliability of instruments for environmental monitoring: some practical considerations Battista, P.
2002
100-101 9-11 p. 1393-1396
4 p.
artikel
769 On the temperature and voltage dependence of short-term negative bias temperature stress Hehenberger, Ph.
2009
100-101 9-11 p. 1013-1017
5 p.
artikel
770 On the Use of Neural Networks to Solve the Reverse Modelling Problem for the Quantification of Dopant Profiles Extracted by Scanning Probe Microscopy Techniques 2004
100-101 9-11 p. 1703-1708
6 p.
artikel
771 On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise 2004
100-101 9-11 p. 1387-1392
6 p.
artikel
772 Opens localization on silicon level in a Chip Scale Package using space domain reflectometry Gaudestad, J.
2013
100-101 9-11 p. 1418-1421
4 p.
artikel
773 Operation of SiC normally-off JFET at the edges of its safe operating area Abbate, Carmine
2011
100-101 9-11 p. 1767-1772
6 p.
artikel
774 Optical diagnosis of excess IDDQ in low power CMOS circuits Stellari, Franco
2002
100-101 9-11 p. 1689-1694
6 p.
artikel
775 Optical losses in single-mode laser diodes Vanzi, M.
2013
100-101 9-11 p. 1529-1533
5 p.
artikel
776 Optimization of ESD protection structures suitable for BCD6 smart power technology Meneghesso, G.
2003
100-101 9-11 p. 1589-1594
6 p.
artikel
777 Optimization of wire connections design for power electronics Celnikier, Y.
2011
100-101 9-11 p. 1892-1897
6 p.
artikel
778 Optimizing focused ion beam created solid immersion lenses in bulk silicon using design of experiments Scholz, P.
2010
100-101 9-11 p. 1441-1445
5 p.
artikel
779 Origin of hot carrier degradation in advanced nMOSFET devices Cretu, B.
2002
100-101 9-11 p. 1405-1408
4 p.
artikel
780 Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS Wang, B.
2011
100-101 9-11 p. 1878-1881
4 p.
artikel
781 Out of plane vs in plane flexural behaviour of thin polysilicon films: Mechanical characterization and application of the Weibull approach Cacchione, F.
2005
100-101 9-11 p. 1758-1763
6 p.
artikel
782 Overcoming Fault Test Coverage with Time-Resolved Emission (TRE) Probing 2004
100-101 9-11 p. 1535-1539
5 p.
artikel
783 Overview of catastrophic failures of freewheeling diodes in power electronic circuits Wu, R.
2013
100-101 9-11 p. 1788-1792
5 p.
artikel
784 Oxide charge measurements in EEPROM devices De Nardi, C.
2005
100-101 9-11 p. 1514-1519
6 p.
artikel
785 Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM Porti, M.
2003
100-101 9-11 p. 1501-1505
5 p.
artikel
786 Oxide reliability below 3nm for advanced CMOS: Issues, characterization, and solutions Goguenheim, D.
2007
100-101 9-11 p. 1322-1329
8 p.
artikel
787 Pad Over Active (POA) solutions for three metal level BCD5 mixed power process - Design and validation of ESD protections Andreini, A.
2003
100-101 9-11 p. 1377-1382
6 p.
artikel
788 Part average analysis – A tool for reducing failure rates in automotive electronics Wagner, M.
2006
100-101 9-11 p. 1433-1438
6 p.
artikel
789 Partial Discharge Failure Analysis of AIN Substrates for IGBT Modules 2004
100-101 9-11 p. 1425-1430
6 p.
artikel
790 Passivation schemes to improve power devices HAST robustness 2004
100-101 9-11 p. 1467-1471
5 p.
artikel
791 Passive optical components: from degradation data to reliability assessment – preliminary results Tomasi, T.
2002
100-101 9-11 p. 1333-1338
6 p.
artikel
792 Pb-free high temperature solders for power device packaging Yamada, Y.
2006
100-101 9-11 p. 1932-1937
6 p.
artikel
793 Percolation theory applied to PZT thin films capacitors breakdown mechanisms Chentir, M.T.
2009
100-101 9-11 p. 1074-1078
5 p.
artikel
794 Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques Moschou, D.C.
2007
100-101 9-11 p. 1378-1383
6 p.
artikel
795 Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning Glowacki, A.
2011
100-101 9-11 p. 1632-1636
5 p.
artikel
796 Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systems Pajona, O.
2005
100-101 9-11 p. 1622-1625
4 p.
artikel
797 Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory Llido, R.
2011
100-101 9-11 p. 1658-1661
4 p.
artikel
798 Photon emission microscopy of inter/intra chip device performance variations Polonsky, S.
2005
100-101 9-11 p. 1471-1475
5 p.
artikel
799 Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing Schlangen, R.
2009
100-101 9-11 p. 1158-1164
7 p.
artikel
800 Physically based analytical model of the blocking I–V curve of Trench IGBTs Maresca, L.
2013
100-101 9-11 p. 1783-1787
5 p.
artikel
801 Physical-to-Logical Mapping of Emission Data using Place-and-Route Nicholson, R.A.
2006
100-101 9-11 p. 1548-1553
6 p.
artikel
802 Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect 2004
100-101 9-11 p. 1503-1507
5 p.
artikel
803 PMOSFET anti-fuse using GIDL-induced-HEIP mechanism Seo, J.Y.
2010
100-101 9-11 p. 1309-1311
3 p.
artikel
804 Positive bias temperature instabilities on sub-nanometer EOT FinFETs Feijoo, P.C.
2011
100-101 9-11 p. 1521-1524
4 p.
artikel
805 Post-breakdown characterization in thin gate oxides Viganò, E.
2002
100-101 9-11 p. 1491-1496
6 p.
artikel
806 Post-breakdown leakage resistance and its dependence on device area Chen, Tze Wee
2006
100-101 9-11 p. 1612-1616
5 p.
artikel
807 Power cycling fatigue and lifetime prediction of power electronic devices in space applications Vacher, F.
2011
100-101 9-11 p. 1985-1989
5 p.
artikel
808 Power cycling results for different control strategies Scheuermann, U.
2010
100-101 9-11 p. 1203-1209
7 p.
artikel
809 Power cycling tests for accelerated ageing of ultracapacitors Briat, O.
2006
100-101 9-11 p. 1445-1450
6 p.
artikel
810 Power MOSFET active power cycling for medical system reliability assessment Sow, Amadou
2013
100-101 9-11 p. 1697-1702
6 p.
artikel
811 Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale Aguilera, L.
2005
100-101 9-11 p. 1390-1393
4 p.
artikel
812 Pre-breakdown leakage current fluctuations of thin gate oxide Reiner, Joachim C.
2003
100-101 9-11 p. 1507-1512
6 p.
artikel
813 Prediction of Delamination Related IC & Packaging Reliability Problems van Driel, W.D.
2005
100-101 9-11 p. 1633-1638
6 p.
artikel
814 Preliminary reliability assessment and failure physical analysis on AlGaN/GaN HEMTs COTS Burgaud, P.
2007
100-101 9-11 p. 1653-1657
5 p.
artikel
815 Preliminary results of storage accelerated aging test on InP/InGaAs DHBT Koné, G.A.
2010
100-101 9-11 p. 1548-1553
6 p.
artikel
816 Preliminary, space focused, reliability tests on European GaN HEMTs Vitobello, F.
2010
100-101 9-11 p. 1581-1586
6 p.
artikel
817 Process Control and Failure Analysis Implementation for THz Schottky-based components Ichizli, V.
2002
100-101 9-11 p. 1593-1596
4 p.
artikel
818 Process dependence of BTI reliability in advanced HK MG stacks Garros, X.
2009
100-101 9-11 p. 982-988
7 p.
artikel
819 Processing assessment and adhesion evaluation of copper through-silicon vias (TSVs) for three-dimensional stacked-integrated circuit (3D-SIC) architectures Yang, Y.
2010
100-101 9-11 p. 1636-1640
5 p.
artikel
820 Progress in reliability research in the micro and nano region Wunderle, B.
2006
100-101 9-11 p. 1685-1694
10 p.
artikel
821 Progressive module redundancy for fault-tolerant designs in nanoelectronics Ban, Tian
2011
100-101 9-11 p. 1489-1492
4 p.
artikel
822 Properties of contactless and contacted charging in MEMS capacitive switches Koutsoureli, M.
2013
100-101 9-11 p. 1655-1658
4 p.
artikel
823 Properties of solders and their fatigue in power modules Lefranc, G.
2002
100-101 9-11 p. 1641-1646
6 p.
artikel
824 Prospects on Mn-doped ZnGeP2 for spintronics Krivosheeva, A.V.
2006
100-101 9-11 p. 1747-1749
3 p.
artikel
825 Pseudo Time-Variant parameters in centrifugal compressor availability studies by means of Markov models Mugnaini, M.
2002
100-101 9-11 p. 1373-1376
4 p.
artikel
826 QALT study of scintillating material in digital flat panels for medical imaging Béranger, M.
2011
100-101 9-11 p. 1801-1805
5 p.
artikel
827 Qualification of 50V GaN on SiC technology for RF power amplifiers Wel, P.J. van der
2013
100-101 9-11 p. 1439-1443
5 p.
artikel
828 Quantitative 3D reconstruction from BS imaging 2004
100-101 9-11 p. 1547-1552
6 p.
artikel
829 Quasi hermetic packaging for new generation of spaceborn microwave equipment Monfraix, Philippe
2009
100-101 9-11 p. 1326-1329
4 p.
artikel
830 Radiation effects in nitride read-only memories Libertino, S.
2010
100-101 9-11 p. 1857-1860
4 p.
artikel
831 Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs Hayama, K.
2005
100-101 9-11 p. 1376-1381
6 p.
artikel
832 Read disturb in flash memories: reliability case Tanduo, P.
2006
100-101 9-11 p. 1439-1444
6 p.
artikel
833 Reading distance degradation mechanisms of near-field RFID devices Jacob, Peter
2009
100-101 9-11 p. 1288-1292
5 p.
artikel
834 Real time degradation monitoring system for high power IGBT module under power cycling test Watanabe, Akihiko
2013
100-101 9-11 p. 1692-1696
5 p.
artikel
835 Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET’s 2004
100-101 9-11 p. 1649-1654
6 p.
artikel
836 Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs Salm, C.
2006
100-101 9-11 p. 1617-1622
6 p.
artikel
837 Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection Ispasoiu, Radu
2006
100-101 9-11 p. 1504-1507
4 p.
artikel
838 Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test Ronchi, N.
2009
100-101 9-11 p. 1207-1210
4 p.
artikel
839 Reliability analysis of CMOS MEMS structures obtained by Front Side Bulk Micromachining Dardalhon, M.
2002
100-101 9-11 p. 1777-1782
6 p.
artikel
840 Reliability analysis of InGaN Blu-Ray laser diode Trivellin, Nicola
2009
100-101 9-11 p. 1236-1239
4 p.
artikel
841 Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation Castellazzi, A.
2002
100-101 9-11 p. 1605-1610
6 p.
artikel
842 Reliability and wearout characterisation of LEDs Jacob, P.
2006
100-101 9-11 p. 1711-1714
4 p.
artikel
843 Reliability aspects of semiconductor devices in high temperature applications Kanert, W.
2003
100-101 9-11 p. 1839-1846
8 p.
artikel
844 Reliability assessment for solders with a stress buffer layer using ball shear strength test and board-level finite element analysis Yew, Ming-Chih
2007
100-101 9-11 p. 1658-1662
5 p.
artikel
845 Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests Marras, A.
2007
100-101 9-11 p. 1492-1496
5 p.
artikel
846 Reliability assessment on new reprogrammable non-volatile memory devices based on SiCr–O Li, Yuan
2011
100-101 9-11 p. 1474-1478
5 p.
artikel
847 Reliability aware design of low power continuous-time sigma–delta modulator Cai, H.
2011
100-101 9-11 p. 1449-1453
5 p.
artikel
848 Reliability challenges for copper low-k dielectrics and copper diffusion barriers Tökei, Zs.
2005
100-101 9-11 p. 1436-1442
7 p.
artikel
849 Reliability challenges in the nanoelectronics era van Roosmalen, A.J.
2006
100-101 9-11 p. 1403-1414
12 p.
artikel
850 Reliability challenges of automotive power electronics Scheuermann, U.
2009
100-101 9-11 p. 1319-1325
7 p.
artikel
851 Reliability Challenges with Ultra-Low k Interlevel Dielectrics 2004
100-101 9-11 p. 1835-1841
7 p.
artikel
852 Reliability considerations for recent Infineon SiC diode releases Holz, M.
2007
100-101 9-11 p. 1741-1745
5 p.
artikel
853 Reliability considerations in pulsed power resonant conversion Carastro, F.
2009
100-101 9-11 p. 1352-1357
6 p.
artikel
854 Reliability Defect Monitoring with Thermal Laser Stimulation: Biased Versus Unbiased Beaudoin, F.
2002
100-101 9-11 p. 1729-1734
6 p.
artikel
855 Reliability determination of aluminium electrolytic capacitors by the mean of various methods. Application to the protection system of the LHC 2004
100-101 9-11 p. 1757-1762
6 p.
artikel
856 Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation Irace, A.
2005
100-101 9-11 p. 1706-1710
5 p.
artikel
857 Reliability estimation of aeronautic component by accelerated tests Charruau, S.
2006
100-101 9-11 p. 1451-1457
7 p.
artikel
858 Reliability Evaluation and Redesign of LNA 2004
100-101 9-11 p. 1727-1732
6 p.
artikel
859 Reliability for Recessed Channel Structure n-MOSFET Seo, J.Y.
2005
100-101 9-11 p. 1317-1320
4 p.
artikel
860 Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies Galy, Ph.
2011
100-101 9-11 p. 1608-1613
6 p.
artikel
861 Reliability improvement by the suppression of keyhole generation in W-plug vias Kim, Jong Hun
2005
100-101 9-11 p. 1455-1458
4 p.
artikel
862 Reliability Improvement in Al Metallization: A Combination of Statistical Prediction and Failure Analytical Methodology 2004
100-101 9-11 p. 1843-1848
6 p.
artikel
863 Reliability improvement of automotive electronics based on environmental stress screen methodology Chan, S.I.
2013
100-101 9-11 p. 1235-1238
4 p.
artikel
864 Reliability improvement of high value doped polysilicon-based resistors Carvou, E.
2002
100-101 9-11 p. 1369-1372
4 p.
artikel
865 Reliability in automotive electronics: a case study applied to diesel engine control Cassanelli, G.
2003
100-101 9-11 p. 1411-1416
6 p.
artikel
866 Reliability Investigation of Gallium Nitride HEMT 2004
100-101 9-11 p. 1369-1373
5 p.
artikel
867 Reliability investigations on HBV using pulsed electrical stress Sydlo, C.
2002
100-101 9-11 p. 1563-1568
6 p.
artikel
868 Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyning Sydlo, C.
2005
100-101 9-11 p. 1600-1604
5 p.
artikel
869 Reliability issues of GaN based high voltage power devices Wuerfl, J.
2011
100-101 9-11 p. 1710-1716
7 p.
artikel
870 Reliability methods and standards Bisschop, J.
2007
100-101 9-11 p. 1330-1335
6 p.
artikel
871 Reliability modelling for packages in flexible end-products van Driel, W.D.
2006
100-101 9-11 p. 1880-1885
6 p.
artikel
872 Reliability of advanced high-k/metal-gate n-FET devices Stathis, J.H.
2010
100-101 9-11 p. 1199-1202
4 p.
artikel
873 Reliability of Au/Al bonding in plastic packages for high temperature (200°C) and high current applications Passagrilli, C.
2002
100-101 9-11 p. 1523-1528
6 p.
artikel
874 Reliability of Contacts for Press-Pack High-Power Devices Vobecký, J.
2005
100-101 9-11 p. 1676-1681
6 p.
artikel
875 Reliability of Flip Chip Applications with Ceramic and Organic Chip Carriers Di Giacomo, Giulio
2002
100-101 9-11 p. 1541-1546
6 p.
artikel
876 Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure 2004
100-101 9-11 p. 1513-1518
6 p.
artikel
877 Reliability of high temperature solder alternatives McCluskey, F.P.
2006
100-101 9-11 p. 1910-1914
5 p.
artikel
878 Reliability of high voltage/high power L/S-band Hbt technology Lambert, B.
2010
100-101 9-11 p. 1543-1547
5 p.
artikel
879 Reliability of III–V concentrator solar cells Algora, Carlos
2010
100-101 9-11 p. 1193-1198
6 p.
artikel
880 Reliability of interfacial adhesion in a multi-level copper/low-k interconnect structure Chiu, C.C.
2007
100-101 9-11 p. 1506-1511
6 p.
artikel
881 Reliability of Low-Cost PCB Interconnections for Telecommunication Applications 2004
100-101 9-11 p. 1299-1304
6 p.
artikel
882 Reliability of low current electrical spring contacts in power modules Hornung, E.
2003
100-101 9-11 p. 1859-1864
6 p.
artikel
883 Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment Velardia, F.
2003
100-101 9-11 p. 1847-1851
5 p.
artikel
884 Reliability of MEMS - a methodical approach Müller-Fiedler, R.
2002
100-101 9-11 p. 1771-1776
6 p.
artikel
885 Reliability of Metamorphic HEMTs for Power Applications Dammann, M.
2002
100-101 9-11 p. 1569-1573
5 p.
artikel
886 Reliability of optical connectors - Humidity behavior of the adhesive Caloz, François
2002
100-101 9-11 p. 1323-1328
6 p.
artikel
887 Reliability of optoelectronics components: towards new qualification practices Goudard, JL
2003
100-101 9-11 p. 1767-1769
3 p.
artikel
888 Reliability of planar, Super-Junction and trench low voltage power MOSFETs Testa, A.
2010
100-101 9-11 p. 1789-1795
7 p.
artikel
889 Reliability of polysilicon microstructures: in situ test benches Millet, Olivier
2002
100-101 9-11 p. 1795-1800
6 p.
artikel
890 Reliability of power electronic devices against cosmic radiation-induced failure 2004
100-101 9-11 p. 1399-1406
8 p.
artikel
891 Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24V battery system applications Rostaing, G.
2013
100-101 9-11 p. 1703-1706
4 p.
artikel
892 Reliability of power transistors against application driven temperature swings Gopalan, Sudha
2002
100-101 9-11 p. 1623-1628
6 p.
artikel
893 Reliability of semiconductor lasers used in current communication systems and sensing equipment Fukuda, Mitsuo
2007
100-101 9-11 p. 1619-1624
6 p.
artikel
894 Reliability of spring pressure contacts under environmental stress Lang, F.
2007
100-101 9-11 p. 1761-1766
6 p.
artikel
895 Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses Koné, G.A.
2011
100-101 9-11 p. 1730-1735
6 p.
artikel
896 Reliability of ultra-thin oxides in CMOS circuits Stathis, J.H.
2003
100-101 9-11 p. 1353-1360
8 p.
artikel
897 Reliability of visible GaN LEDs in plastic package Meneghesso, G.
2003
100-101 9-11 p. 1737-1742
6 p.
artikel
898 Reliability of Wire Bonding on Low-k Dielectric Material in Damascene Copper Integrated Circuits PBGA Assembly Sivakumar, Mohandass
2002
100-101 9-11 p. 1535-1540
6 p.
artikel
899 Reliability Potential Of Epoxy Based Encapsulants For Automotive Applications Braun, T.
2005
100-101 9-11 p. 1672-1675
4 p.
artikel
900 Reliability predictions in electronic industrial applications Cassanelli, G.
2005
100-101 9-11 p. 1321-1326
6 p.
artikel
901 Reliability Problems of Passive Optical Devices and Modules after Mechanical, Thermal and Humidity Testing Duerr, Klaus
2002
100-101 9-11 p. 1329-1332
4 p.
artikel
902 Reliability screening through electrical testing for press-fit alternator power diode in automotive application Tan, Cher Ming
2005
100-101 9-11 p. 1723-1727
5 p.
artikel
903 Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress Sydlo, C.
2003
100-101 9-11 p. 1929-1933
5 p.
artikel
904 Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress Khemiri, S.
2011
100-101 9-11 p. 1783-1787
5 p.
artikel
905 Reliability study of Power RF LDMOS for Radar Application 2004
100-101 9-11 p. 1449-1454
6 p.
artikel
906 Reliability study of the assembly of a large EGA on a build up board using thermo-mechanical simulations Guilbault, P.
2002
100-101 9-11 p. 1529-1533
5 p.
artikel
907 Reliability tests on WDM filters Vanzi, M.
2002
100-101 9-11 p. 1317-1321
5 p.
artikel
908 Reliable power electronics for automotive applications Seliger, N.
2002
100-101 9-11 p. 1597-1604
8 p.
artikel
909 Repairing bonding wire connections using a microsoldering unit inside an SEM Rummel, Andreas
2013
100-101 9-11 p. 1427-1429
3 p.
artikel
910 Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug Li, Yuan
2003
100-101 9-11 p. 1449-1454
6 p.
artikel
911 Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications Crespo-Yepes, A.
2013
100-101 9-11 p. 1247-1251
5 p.
artikel
912 Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics Rossetto, I.
2013
100-101 9-11 p. 1456-1460
5 p.
artikel
913 Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses Crespo-Yepes, A.
2009
100-101 9-11 p. 1024-1028
5 p.
artikel
914 Revisiting power cycling test for better life-time prediction in traction Mermet-Guyennet, M.
2007
100-101 9-11 p. 1690-1695
6 p.
artikel
915 Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology Rey-Tauriac, Y.
2003
100-101 9-11 p. 1865-1869
5 p.
artikel
916 Robustness of 1.2kV SiC MOSFET devices Othman, D.
2013
100-101 9-11 p. 1735-1738
4 p.
artikel
917 Robustness test and failure analysis of IGBT modules during turn-off Urresti-Ibañez, J.
2007
100-101 9-11 p. 1725-1729
5 p.
artikel
918 Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices Kerlain, A.
2005
100-101 9-11 p. 1327-1330
4 p.
artikel
919 Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels –An explanation and die protection strategy Sowariraj, M.S.B.
2003
100-101 9-11 p. 1569-1575
7 p.
artikel
920 Room temperature observation of point defect on gold surface using thermovoltage mapping Roy, Arijit
2007
100-101 9-11 p. 1580-1584
5 p.
artikel
921 Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions Ismail, N.
2005
100-101 9-11 p. 1611-1616
6 p.
artikel
922 Saint-Venant’s principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing Suhir, E.
2013
100-101 9-11 p. 1506-1509
4 p.
artikel
923 Scan chain failure analysis using laser voltage imaging Liao, Joy Y.
2010
100-101 9-11 p. 1422-1426
5 p.
artikel
924 Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films Hofer, Alexander
2013
100-101 9-11 p. 1430-1433
4 p.
artikel
925 Scanning Thermal Microscopy in Microsystem Reliability Analysis Szeloch, R.F.
2002
100-101 9-11 p. 1719-1722
4 p.
artikel
926 Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit Abbate, C.
2013
100-101 9-11 p. 1707-1712
6 p.
artikel
927 Science-based MEMS reliability methodology Tanner, D.M.
2007
100-101 9-11 p. 1806-1811
6 p.
artikel
928 Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET Readout Brahma, Sanjib Kumar
2005
100-101 9-11 p. 1487-1492
6 p.
artikel
929 SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up Sterpone, L.
2013
100-101 9-11 p. 1311-1314
4 p.
artikel
930 Semiconductor material analysis based on microcalorimeter EDS Simmnacher, B.
2003
100-101 9-11 p. 1675-1680
6 p.
artikel
931 Semiconductors in high temperature applications – a future trend in automotive industry 2004
100-101 9-11 p. 1413-1417
5 p.
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932 Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection Dutertre, J.M.
2013
100-101 9-11 p. 1320-1324
5 p.
artikel
933 Sequential environmental stresses tests qualification for automotive components Bahi, M.A.
2007
100-101 9-11 p. 1680-1684
5 p.
artikel
934 Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement Roy, D.
2002
100-101 9-11 p. 1497-1500
4 p.
artikel
935 Series resistance degradation due to NBTI in PMOSFET Krishnan, Mahesh S.
2002
100-101 9-11 p. 1433-1438
6 p.
artikel
936 Short defect characterization based on TCR parameter extraction Firiti, A.
2003
100-101 9-11 p. 1563-1568
6 p.
artikel
937 Simulated SAM A-scans on multilayer MEMS components Janting, Jakob
2002
100-101 9-11 p. 1811-1814
4 p.
artikel
938 Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime Nguyen, H.V.
2002
100-101 9-11 p. 1421-1425
5 p.
artikel
939 Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction Stangoni, M.
2002
100-101 9-11 p. 1701-1706
6 p.
artikel
940 Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology Cilento, T.
2010
100-101 9-11 p. 1367-1372
6 p.
artikel
941 Simulation of failure time distributions of metal lines under electromigration Carriero, M.R.
2002
100-101 9-11 p. 1469-1472
4 p.
artikel
942 Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures Dalleau, David
2003
100-101 9-11 p. 1821-1826
6 p.
artikel
943 Simulative prediction of the resistance change due to electromigration induced void evolution Ceric, Hajdin
2002
100-101 9-11 p. 1457-1460
4 p.
artikel
944 Simultaneous IC-internal voltage and current measurements via a multi lever Scanning Force Microscope Hartmann, C.
2002
100-101 9-11 p. 1759-1762
4 p.
artikel
945 Single contact beam induced current phenomenon for microelectronic failure analysis Phang, JCH
2003
100-101 9-11 p. 1595-1602
8 p.
artikel
946 Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization Podgaynaya, A.
2010
100-101 9-11 p. 1347-1351
5 p.
artikel
947 SNaP: A novel hybrid method for circuit reliability assessment under multiple faults Pagliarini, S.N.
2013
100-101 9-11 p. 1230-1234
5 p.
artikel
948 Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level Autran, J.L.
2010
100-101 9-11 p. 1822-1831
10 p.
artikel
949 SOI design challenges Dufourt, D.
2003
100-101 9-11 p. 1361-1367
7 p.
artikel
950 Solar Cell Analysis with Light Emission and OBIC Techniques Sanchez, K.
2003
100-101 9-11 p. 1755-1760
6 p.
artikel
951 Solder joint reliability under realistic service conditions Borgesen, P.
2013
100-101 9-11 p. 1587-1591
5 p.
artikel
952 Source electrode evolution of a low voltage power MOSFET under avalanche cycling Bernoux, B.
2009
100-101 9-11 p. 1341-1345
5 p.
artikel
953 S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects Belaïd, M.A.
2011
100-101 9-11 p. 1551-1556
6 p.
artikel
954 Specification and use of pulsed current profiles for ultracapacitors power cycling Lajnef, W.
2005
100-101 9-11 p. 1746-1749
4 p.
artikel
955 SPICE modelling of hot-carrier degradation in Si1– x Ge x S/D and HfSiON based pMOS transistors Martin-Martinez, J.
2010
100-101 9-11 p. 1263-1266
4 p.
artikel
956 SRAM cell defect isolation methodology by sub micron probing technique Sibileau, F.
2005
100-101 9-11 p. 1562-1567
6 p.
artikel
957 Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses 2004
100-101 9-11 p. 1523-1528
6 p.
artikel
958 Statistical analysis during the reliability simulation Bestory, C.
2007
100-101 9-11 p. 1353-1357
5 p.
artikel
959 Statistical aspects of the degradation of LDD nMOSFETs Andries, E.
2002
100-101 9-11 p. 1409-1413
5 p.
artikel
960 Statistical modeling of reliability in logic devices Schleifer, Jochen
2011
100-101 9-11 p. 1469-1473
5 p.
artikel
961 Statistical RTS model for digital circuits Brusamarello, Lucas
2009
100-101 9-11 p. 1064-1069
6 p.
artikel
962 Statistical simulation of gate dielectric wearout, leakage, and breakdown 2004
100-101 9-11 p. 1879-1884
6 p.
artikel
963 Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications Fleury, Clément
2013
100-101 9-11 p. 1444-1449
6 p.
artikel
964 STEM role in failure analysis Iannello, M.-A.
2005
100-101 9-11 p. 1526-1531
6 p.
artikel
965 Strain investigation around shallow trench isolations : a LACBED Study Albarède, Paul-Henri
2003
100-101 9-11 p. 1693-1698
6 p.
artikel
966 Stress evolution in the metal layers of TSVs with Bosch scallops Singulani, A.P.
2013
100-101 9-11 p. 1602-1605
4 p.
artikel
967 Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System Jeong, Jae-Seong
2005
100-101 9-11 p. 1398-1401
4 p.
artikel
968 Strong electron irradiation hardness of 852 nm Al-free laser diodes Boutillier, M.
2006
100-101 9-11 p. 1715-1719
5 p.
artikel
969 Structural reliability assessment of multi-stack package (MSP) under high temperature storage (HTS) testing condition Yang, S.Y.
2006
100-101 9-11 p. 1904-1909
6 p.
artikel
970 Structure dependent charging process in RF MEMS capacitive switches Papandreou, E.
2007
100-101 9-11 p. 1812-1817
6 p.
artikel
971 Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I Tanaka, M.
2011
100-101 9-11 p. 1933-1937
5 p.
artikel
972 Study and validation of a power-rail ESD clamp in BiCMOS process with a reduced temperature dependency of its leakage current 2004
100-101 9-11 p. 1799-1804
6 p.
artikel
973 Study for pulse stress NBTI characteristics degradation stress Kawai, Nozomu
2009
100-101 9-11 p. 989-993
5 p.
artikel
974 Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell Breglio, G.
2007
100-101 9-11 p. 1756-1760
5 p.
artikel
975 Study of Area Scaling Effect on Integrated Circuit Reliability Based on Yield Models Hong, Changsoo
2005
100-101 9-11 p. 1305-1310
6 p.
artikel
976 Study of die attach technologies for high temperature power electronics: Silver sintering and gold–germanium alloy Sabbah, Wissam
2013
100-101 9-11 p. 1617-1621
5 p.
artikel
977 Study of hot-carrier effects on power RF LDMOS device reliability Gares, M.
2007
100-101 9-11 p. 1394-1399
6 p.
artikel
978 Study of influence of failure modes on lifetime distribution prediction of 1.55 μm DFB Laser diodes using weak drift of monitored parameters during ageing tests 2004
100-101 9-11 p. 1337-1342
6 p.
artikel
979 Study of non-contact nano-probing technique using FIB Mashiko, Yoji
2010
100-101 9-11 p. 1451-1453
3 p.
artikel
980 Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC Bouya, M.
2007
100-101 9-11 p. 1630-1633
4 p.
artikel
981 Study of performance degradations in DC-DC converter due to hot carrier stress by simulation Yu, C.
2006
100-101 9-11 p. 1840-1843
4 p.
artikel
982 Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches Tazzoli, A.
2010
100-101 9-11 p. 1604-1608
5 p.
artikel
983 Study of the ESD defects impact on ICs reliability 2004
100-101 9-11 p. 1811-1815
5 p.
artikel
984 Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences Li, B.
2011
100-101 9-11 p. 1557-1560
4 p.
artikel
985 Study on electrostatic discharge (ESD) reliability improvement of ZnO-based multilayered chip varistor(MLV) 2004
100-101 9-11 p. 1565-1569
5 p.
artikel
986 Supercapacitor ageing at constant temperature and constant voltage and thermal shock Gualous, H.
2010
100-101 9-11 p. 1783-1788
6 p.
artikel
987 Supercapacitors aging diagnosis using least square algorithm Oukaour, A.
2013
100-101 9-11 p. 1638-1642
5 p.
artikel
988 Surface leakage current related failure of power silicon devices operated at high junction temperature Nuttall, K.I.
2003
100-101 9-11 p. 1913-1918
6 p.
artikel
989 Surface roughness effect on copper–alumina adhesion Lim, Ju Dy
2013
100-101 9-11 p. 1548-1552
5 p.
artikel
990 Symmetrical ESD protection for advanced CMOS technology dedicated to 100GHz RF application Galy, Ph.
2013
100-101 9-11 p. 1284-1287
4 p.
artikel
991 Synthesis of scanning electron microscopy images by high performance computing for the metrology of advanced CMOS processes Esposito, Aniello
2011
100-101 9-11 p. 1673-1678
6 p.
artikel
992 System ESD robustness by co-design of on-chip and on-board protection measures Gossner, H.
2010
100-101 9-11 p. 1359-1366
8 p.
artikel
993 Techniques to study the reliability of metal RF MEMS capacitive switches De Wolf, I.
2002
100-101 9-11 p. 1789-1794
6 p.
artikel
994 Temperature-dependent breakdown and hot carrier stress of PHEMTs 2004
100-101 9-11 p. 1381-1385
5 p.
artikel
995 Temperature-dependent reverse-bias stress of normally-off GaN power FETs Giuliani, F.
2013
100-101 9-11 p. 1486-1490
5 p.
artikel
996 Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current Perpiñà, X.
2006
100-101 9-11 p. 1834-1839
6 p.
artikel
997 Testing of Ultra Low Voltage VLSI Chips using the Superconducting Single-Photon Detector (SSPD) 2004
100-101 9-11 p. 1663-1668
6 p.
artikel
998 Testing the effects of reflow on tantalum capacitors Virkki, J.
2010
100-101 9-11 p. 1650-1653
4 p.
artikel
999 The challenges of virtual prototyping and qualification for future microelectronics Zhang, G.Q.
2003
100-101 9-11 p. 1777-1783
7 p.
artikel
1000 The combinational or selective usage of the laser SQUID microscope, the non-bias laser terahertz emission microscope, and fault simulations in non-electrical-contact fault localization Nikawa, Kiyoshi
2011
100-101 9-11 p. 1624-1631
8 p.
artikel
                             1093 gevonden resultaten
 
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