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                             551 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment Santini, T.
2014
100-101 9-10 p. 1718-1723
6 p.
artikel
2 Accelerated life test of high luminosity AlGaInP LEDs Nogueira, E.
2012
100-101 9-10 p. 1853-1858
6 p.
artikel
3 A challenging case study resolved by using the Dynamic Laser Stimulation technique Deyine, A.
2012
100-101 9-10 p. 2068-2072
5 p.
artikel
4 A closed-loop IGBT non-destructive tester Ahmed, A.
2012
100-101 9-10 p. 2358-2362
5 p.
artikel
5 A comprehensive study of the application of the EOP techniques on bipolar devices Rebaï, M.M.
2014
100-101 9-10 p. 2088-2092
5 p.
artikel
6 Acoustic detection of micro-cracks in small electronic devices Reuther, G.M.
2014
100-101 9-10 p. 2118-2122
5 p.
artikel
7 Active cycling reliability of power devices: Expectations and limitations Kanert, W.
2012
100-101 9-10 p. 2336-2341
6 p.
artikel
8 A design for robust wide metal tracks Ackermann, M.
2012
100-101 9-10 p. 2447-2451
5 p.
artikel
9 A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devices Sintamarean, N.C.
2014
100-101 9-10 p. 1655-1660
6 p.
artikel
10 A distributed minority and majority voting based redundancy scheme Balasubramanian, P.
2015
100-101 9-10 p. 1373-1378
6 p.
artikel
11 Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures Simon-Najasek, Michél
2014
100-101 9-10 p. 1785-1789
5 p.
artikel
12 Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration Sander, C.
2014
100-101 9-10 p. 1959-1962
4 p.
artikel
13 A fast reliability assessment method for Si MEMS based microcantilever beams Rafiee, P.
2014
100-101 9-10 p. 2180-2184
5 p.
artikel
14 Ageing mechanisms in Deep Trench Termination (DT2) Diode Baccar, F.
2015
100-101 9-10 p. 1981-1987
7 p.
artikel
15 Ageing monitoring in IGBT module under sinusoidal loading Ghimire, Pramod
2015
100-101 9-10 p. 1945-1949
5 p.
artikel
16 Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects La Grassa, M.
2015
100-101 9-10 p. 1775-1778
4 p.
artikel
17 Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags Bose, I.
2014
100-101 9-10 p. 1643-1647
5 p.
artikel
18 A methodologic project to characterize and model COTS component reliability Durier, A.
2015
100-101 9-10 p. 2097-2102
6 p.
artikel
19 A methodology to account for the finger interruptions in solar cell performance De Rose, R.
2012
100-101 9-10 p. 2500-2503
4 p.
artikel
20 Analysis and modeling of passive device degradation for a long-term electromagnetic emission study of a DC–DC converter Huang, H.
2015
100-101 9-10 p. 2061-2066
6 p.
artikel
21 Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown Miranda, E.
2012
100-101 9-10 p. 1909-1912
4 p.
artikel
22 Analysis of an ESD failure mechanism on a SiC MESFET Phulpin, T.
2014
100-101 9-10 p. 2217-2221
5 p.
artikel
23 Analysis of current distribution on IGBT under unclamped inductive switching conditions Iwahashi, Yohei
2012
100-101 9-10 p. 2431-2434
4 p.
artikel
24 Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods Shi, Hongbin
2012
100-101 9-10 p. 1870-1875
6 p.
artikel
25 Analysis of high-power devices using proton beam induced charge microscopy Zmeck, M.
2001
100-101 9-10 p. 1519-1524
6 p.
artikel
26 Analysis of neutron-induced single-event burnout in SiC power MOSFETs Shoji, Tomoyuki
2015
100-101 9-10 p. 1517-1521
5 p.
artikel
27 Analysis of retention tail distribution induced by scaled shallow trench isolation for high densityDRAMs Pil Kim, Young
2001
100-101 9-10 p. 1301-1305
5 p.
artikel
28 Analysis of the role of the parasitic BJT of Super-Junction power MOSFET under TLP stress Chirilă, T.
2015
100-101 9-10 p. 1481-1485
5 p.
artikel
29 Analytical stress characterization after different chip separation methods Fuegl, M.
2014
100-101 9-10 p. 1735-1740
6 p.
artikel
30 An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors Divay, A.
2015
100-101 9-10 p. 1703-1707
5 p.
artikel
31 A new approach for making electrically conductive interconnections between small contacts in failure analysis Rummel, Andreas
2012
100-101 9-10 p. 2135-2138
4 p.
artikel
32 A new design technique of TFT–LCD display for avionics application Catelani, M.
2012
100-101 9-10 p. 1776-1780
5 p.
artikel
33 A New Versatile Testing Interface for Failure Analysis in Integrated Circuits Desplats, Romain
2001
100-101 9-10 p. 1495-1499
5 p.
artikel
34 An Extrapolation Model for Lifetime Prediction for Off-State – Degradation of MOS-FETs Muehlhoff, A.
2001
100-101 9-10 p. 1289-1293
5 p.
artikel
35 Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence Berthet, F.
2012
100-101 9-10 p. 2159-2163
5 p.
artikel
36 Anode hole generation mechanisms Ghetti, A.
2001
100-101 9-10 p. 1347-1354
8 p.
artikel
37 Anomaly detection for satellite power subsystem with associated rules based on Kernel Principal Component Analysis Pan, Dawei
2015
100-101 9-10 p. 2082-2086
5 p.
artikel
38 A novel analytical method for defect tolerance assessment Slimani, M.
2015
100-101 9-10 p. 1285-1289
5 p.
artikel
39 A Novel Application of the FIB Lift-out Technique for 3-D TEM Analysis Lee, Jon C.
2001
100-101 9-10 p. 1551-1556
6 p.
artikel
40 A Novel Power Module Design and Technology for Improved Power Cycling Capability Scheuermann, U.
2001
100-101 9-10 p. 1713-1718
6 p.
artikel
41 An overview of hot-carrier induced degradation in 0.25 μm Partially and Fully Depleted SOI N-MOSFET's Dieudonné, F.
2001
100-101 9-10 p. 1417-1420
4 p.
artikel
42 An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis Shubhakar, K.
2015
100-101 9-10 p. 1450-1455
6 p.
artikel
43 A numerical procedure for simulating thermal oxidation diffusion of epoxy molding compounds Cui, Zaifu
2015
100-101 9-10 p. 1877-1881
5 p.
artikel
44 Application of expert systems to systems reliability evaluation Rawicz, Andrew H.
1995
100-101 9-10 p. 1309-1320
12 p.
artikel
45 Application of Scanning Probe Microscopy techniques in Semiconductor Failure Analysis Ebersberger, B.
2001
100-101 9-10 p. 1449-1458
10 p.
artikel
46 A pragmatic methodology for the monitoring of the electronic components ageing: The case of power thyristors at EDF Simon, G.
2001
100-101 9-10 p. 1701-1705
5 p.
artikel
47 A preliminary study on the thermal and mechanical performances of sintered nano-scale silver die-attach technology depending on the substrate metallization Le Henaff, F.
2012
100-101 9-10 p. 2321-2325
5 p.
artikel
48 A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node Wan, Xinggong
2014
100-101 9-10 p. 2306-2309
4 p.
artikel
49 A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices Leicht, M.
2001
100-101 9-10 p. 1535-1537
3 p.
artikel
50 A reliable solderless connection technique for high I/O counts ceramic land grid array package for space applications Sauveplane, J.B.
2015
100-101 9-10 p. 1815-1820
6 p.
artikel
51 A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design Cavaiuolo, D.
2015
100-101 9-10 p. 1971-1975
5 p.
artikel
52 As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability Tang, B.J.
2014
100-101 9-10 p. 1675-1679
5 p.
artikel
53 Assessment methodology of the lateral migration component in data retention of 3D SONOS memories Liu, Lifang
2014
100-101 9-10 p. 1697-1701
5 p.
artikel
54 Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test technique Magnien, J.
2014
100-101 9-10 p. 1764-1769
6 p.
artikel
55 Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective Raghavan, Nagarajan
2014
100-101 9-10 p. 2295-2299
5 p.
artikel
56 ASTEP (2005–2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure Autran, J.L.
2015
100-101 9-10 p. 1506-1511
6 p.
artikel
57 A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches Koutsoureli, M.
2014
100-101 9-10 p. 2159-2163
5 p.
artikel
58 A study of field emission process in electrostatically actuated MEMS switches Michalas, L.
2012
100-101 9-10 p. 2267-2271
5 p.
artikel
59 A study of through package vias in a glass interposer for multifunctional and miniaturized systems El Amrani, A.
2014
100-101 9-10 p. 1972-1976
5 p.
artikel
60 A study on electrochemical effects in external capacitor packages Preu, H.
2014
100-101 9-10 p. 2023-2027
5 p.
artikel
61 A temperature study of photosensitivity in SLS polycrystalline silicon TFTs Michalas, L.
2012
100-101 9-10 p. 2508-2511
4 p.
artikel
62 A thermal modeling methodology for power semiconductor modules van der Broeck, Christoph H.
2015
100-101 9-10 p. 1938-1944
7 p.
artikel
63 A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging Ghisi, Aldo
2014
100-101 9-10 p. 2039-2043
5 p.
artikel
64 Auger electron spectroscopy characterization of Ti/NiV/Ag multilayer back-metal for monitoring of Ni migration on Ag surface Ricciari, R.
2015
100-101 9-10 p. 1617-1621
5 p.
artikel
65 A unified multiple stress reliability model for microelectronic devices — Application to 1.55μm DFB laser diode module for space validation Bensoussan, A.
2015
100-101 9-10 p. 1729-1735
7 p.
artikel
66 Author index 2001
100-101 9-10 p. I-III
nvt p.
artikel
67 Availability assessment methods and their application in practice Dekke, Rommert
1995
100-101 9-10 p. 1257-1274
18 p.
artikel
68 AVERT: An elaborate model for simulating variable retention time in DRAMs Kim, Dae-Hyun
2015
100-101 9-10 p. 1313-1319
7 p.
artikel
69 Avoiding flex cracks in ceramic capacitors: Analytical tool for a reliable failure analysis and guideline for positioning cercaps on PCBs Vogel, G.
2015
100-101 9-10 p. 2159-2164
6 p.
artikel
70 A way to implement the electro-optical technique to inertial MEMS Melendez, K.
2015
100-101 9-10 p. 1916-1919
4 p.
artikel
71 Backend dielectric reliability simulator for microprocessor system Chen, Chang-Chih
2012
100-101 9-10 p. 1953-1959
7 p.
artikel
72 Backside failure analysis application of light scattering for active silicon defect detection Castignolles, M.
2012
100-101 9-10 p. 2058-2063
6 p.
artikel
73 Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation Desplats, R.
2001
100-101 9-10 p. 1539-1544
6 p.
artikel
74 Backside spectroscopic photon emission microscopy using intensified silicon CCD Glowacki, A.
2014
100-101 9-10 p. 2105-2108
4 p.
artikel
75 Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure Busatto, G.
2012
100-101 9-10 p. 2363-2367
5 p.
artikel
76 Breakdown behaviour of high-voltage GaN-HEMTs Saito, W.
2015
100-101 9-10 p. 1682-1686
5 p.
artikel
77 BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic Franco, J.
2012
100-101 9-10 p. 1932-1935
4 p.
artikel
78 Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology Sarafianos, A.
2012
100-101 9-10 p. 2035-2038
4 p.
artikel
79 Built-in self-test for bias temperature instability, hot-carrier injection, and gate oxide breakdown in embedded DRAMs Kim, Dae-Hyun
2015
100-101 9-10 p. 2113-2118
6 p.
artikel
80 Calendar and cycling ageing of activated carbon supercapacitor for automotive application Gualous, H.
2012
100-101 9-10 p. 2477-2481
5 p.
artikel
81 Case study of failure analysis in thin film silicon solar cell Mello, D.
2015
100-101 9-10 p. 1800-1803
4 p.
artikel
82 Catastrophic flip-chip failures at thermal cycles caused by micro-cracks in passivation layer, present only in the spacing between minimum width stripes of last metal level Torrisi, R.L.
2012
100-101 9-10 p. 2127-2134
8 p.
artikel
83 16-Channel micro magnetic flux sensor array for IGBT current distribution measurement Tomonaga, H.
2015
100-101 9-10 p. 1357-1362
6 p.
artikel
84 Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs Lee, Seonhaeng
2012
100-101 9-10 p. 1949-1952
4 p.
artikel
85 Characterisation method for chip card ESD events causing terminal failures Groos, Gerhard
2012
100-101 9-10 p. 2005-2009
5 p.
artikel
86 Characteristics and aging of PCB embedded power electronics Randoll, Richard
2015
100-101 9-10 p. 1634-1639
6 p.
artikel
87 Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs Petitdidier, S.
2015
100-101 9-10 p. 1719-1723
5 p.
artikel
88 Characterization and model of temperature effect on the conducted immunity of Op-Amp Dubois, T.
2015
100-101 9-10 p. 2055-2060
6 p.
artikel
89 Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs Ayala, N.
2012
100-101 9-10 p. 1924-1927
4 p.
artikel
90 Characterization of Ti diffusion in PVD deposited WTi/AlCu metallization on monocrystalline Si by means of secondary ion mass spectroscopy Plappert, M.
2012
100-101 9-10 p. 1993-1997
5 p.
artikel
91 Charge induced by ionizing radiation understood as a disturbance in a sliding mode control of dielectric charge Domínguez-Pumar, Manuel
2015
100-101 9-10 p. 1926-1931
6 p.
artikel
92 Charge-related phenomena and reliability of non-volatile memories Ghidini, G.
2012
100-101 9-10 p. 1876-1882
7 p.
artikel
93 Clamp voltage and ideality factor in laser diodes Vanzi, M.
2015
100-101 9-10 p. 1736-1740
5 p.
artikel
94 Coaxial Ion-Photon System Tsao, C.-C.
2001
100-101 9-10 p. 1483-1488
6 p.
artikel
95 Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses Wang, Y.
2014
100-101 9-10 p. 1774-1778
5 p.
artikel
96 Compact thermal modeling of spin transfer torque magnetic tunnel junction Wang, Y.
2015
100-101 9-10 p. 1649-1653
5 p.
artikel
97 Comparative soft error evaluation of layout cells in FinFET technology Artola, L.
2014
100-101 9-10 p. 2300-2305
6 p.
artikel
98 Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics Lee, Seul Ki
2012
100-101 9-10 p. 2504-2507
4 p.
artikel
99 Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs Sharma, P.
2015
100-101 9-10 p. 1427-1432
6 p.
artikel
100 Comparison of FET electro-optical modulation for 1300nm and 1064nm laser sources Pagano, C.
2012
100-101 9-10 p. 2024-2030
7 p.
artikel
101 Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stresses Duan, N.
2014
100-101 9-10 p. 1753-1757
5 p.
artikel
102 Comparison of Si <100> and <110> crystal orientation nanowire transistor reliability using Poisson–Schrödinger and classical simulations Gerrer, L.
2015
100-101 9-10 p. 1307-1312
6 p.
artikel
103 Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications Perpiñà, X.
2014
100-101 9-10 p. 1839-1844
6 p.
artikel
104 Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application Othman, D.
2012
100-101 9-10 p. 1859-1864
6 p.
artikel
105 Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications Zhang, L.
2015
100-101 9-10 p. 1559-1563
5 p.
artikel
106 Comprehensive reliability and aging analysis on SRAMs within microprocessor systems Liu, Taizhi
2015
100-101 9-10 p. 1290-1296
7 p.
artikel
107 Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress Kang, Jung Han
2014
100-101 9-10 p. 2164-2166
3 p.
artikel
108 Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress Lorenzi, P.
2015
100-101 9-10 p. 1446-1449
4 p.
artikel
109 Contact degradation due to material transfer in MEM switches Peschot, A.
2012
100-101 9-10 p. 2261-2266
6 p.
artikel
110 Contents 2001
100-101 9-10 p. iii-viii
nvt p.
artikel
111 Context aware slope based transistor-level aging model Cucu Laurenciu, N.
2012
100-101 9-10 p. 1792-1796
5 p.
artikel
112 Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests Mavinkurve, A.
2014
100-101 9-10 p. 1661-1665
5 p.
artikel
113 Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980nm high-power laser diodes Del Vecchio, P.
2015
100-101 9-10 p. 1741-1745
5 p.
artikel
114 Correlation between mechanical properties and microstructure of different aluminum wire qualities after ultrasonic bonding Broll, M.S.
2015
100-101 9-10 p. 1855-1860
6 p.
artikel
115 Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies Lazăr, O.
2015
100-101 9-10 p. 1714-1718
5 p.
artikel
116 Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes Galy, Philippe
2015
100-101 9-10 p. 1532-1536
5 p.
artikel
117 Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. Zander, D.
2001
100-101 9-10 p. 1355-1360
6 p.
artikel
118 Crosstalk in monolithic GaN-on-Silicon power electronic devices Unni, V.
2014
100-101 9-10 p. 2242-2247
6 p.
artikel
119 Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress Lee, Jae Hoon
2014
100-101 9-10 p. 2315-2318
4 p.
artikel
120 Damp Heat test on LiNbO optical modulators Furcas, P.
2001
100-101 9-10 p. 1603-1607
5 p.
artikel
121 DC–DC's total ionizing dose hardness decrease in passive reserve mode Kessarinskiy, L.N.
2015
100-101 9-10 p. 1527-1531
5 p.
artikel
122 Defect-centric perspective of time-dependent BTI variability Toledano-Luque, M.
2012
100-101 9-10 p. 1883-1890
8 p.
artikel
123 Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT Sydlo, C.
2001
100-101 9-10 p. 1567-1571
5 p.
artikel
124 Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS Abdul Wahab, Y.
2014
100-101 9-10 p. 2334-2338
5 p.
artikel
125 Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation Katsuno, T.
2014
100-101 9-10 p. 2227-2231
5 p.
artikel
126 Degradation behavior in upstream/downstream via test structures Kludt, J.
2014
100-101 9-10 p. 1724-1728
5 p.
artikel
127 Degradation behavior of high power light emitting diode under high frequency switching Chen, S.H.
2012
100-101 9-10 p. 2168-2173
6 p.
artikel
128 Degradation of 0.25μm GaN HEMTs under high temperature stress test Dammann, M.
2015
100-101 9-10 p. 1667-1671
5 p.
artikel
129 Degradation testing and failure analysis of DC film capacitors under high humidity conditions Wang, Huai
2015
100-101 9-10 p. 2007-2011
5 p.
artikel
130 3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions Riccio, Michele
2014
100-101 9-10 p. 1845-1850
6 p.
artikel
131 3D electro-thermal simulations of wide area power devices operating in avalanche condition Riccio, M.
2012
100-101 9-10 p. 2385-2390
6 p.
artikel
132 Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing test Ayadi, M.
2014
100-101 9-10 p. 1944-1948
5 p.
artikel
133 Design and implementation of a low cost test bench to assess the reliability of FPGA Naouss, M.
2015
100-101 9-10 p. 1341-1345
5 p.
artikel
134 Design for built-in FPGA reliability via fine-grained 2-D error correction codes Ahilan, A.
2015
100-101 9-10 p. 2108-2112
5 p.
artikel
135 Design for reliability of solid state lighting systems Perpiñà, X.
2012
100-101 9-10 p. 2294-2300
7 p.
artikel
136 Design guideline of a thin film SOI power MOSFET for high thermal stability Morisawa, Yuka
2012
100-101 9-10 p. 2380-2384
5 p.
artikel
137 Design of CMOS logic gates with enhanced robustness against aging degradation Butzen, P.F.
2012
100-101 9-10 p. 1822-1826
5 p.
artikel
138 Design of SET tolerant LC oscillators using distributed bias circuitry Jagtap, Sharayu
2015
100-101 9-10 p. 1537-1541
5 p.
artikel
139 Destruction failure analysis and international reliability test standard for power devices Setoya, Takashi
2015
100-101 9-10 p. 1932-1937
6 p.
artikel
140 Detection of DR violations in ASIC components using photon emission techniques Redmard, Eddie
2012
100-101 9-10 p. 2054-2057
4 p.
artikel
141 Determination of adhesion and delamination prediction for semiconductor packages by using Grey Scale Correlation and Cohesive Zone Modelling Goroll, Michael
2012
100-101 9-10 p. 2289-2293
5 p.
artikel
142 Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions Monsieur, F.
2001
100-101 9-10 p. 1295-1300
6 p.
artikel
143 Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation Petersen, R.
2001
100-101 9-10 p. 1591-1596
6 p.
artikel
144 Development of an EB/FIB Integrated Test System Miura, Katsuyoshi
2001
100-101 9-10 p. 1489-1494
6 p.
artikel
145 Diamond-Coated Cantilevers for Scanning Capacitance Microscopy Applications Yabuhara, H.
2001
100-101 9-10 p. 1459-1463
5 p.
artikel
146 Die crack failure mechanism investigations depending on the time of failure Zirilli, T.
2015
100-101 9-10 p. 1600-1606
7 p.
artikel
147 Dielectric charging effects in floating electrode MEMS capacitive switches Michalas, L.
2015
100-101 9-10 p. 1891-1895
5 p.
artikel
148 Dielectric strength and thermal performance of PCB-embedded power electronics Randoll, R.
2014
100-101 9-10 p. 1872-1876
5 p.
artikel
149 Diffusion growth of Cu3Sn phase in the bump and thin film Cu/Sn structures Dimcic, B.
2012
100-101 9-10 p. 1971-1974
4 p.
artikel
150 Diffusivity variation in Electromigration failure Dwyer, V.M.
2012
100-101 9-10 p. 1960-1965
6 p.
artikel
151 Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications Seif, M.
2014
100-101 9-10 p. 2171-2175
5 p.
artikel
152 Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs Lee, Seung Min
2012
100-101 9-10 p. 1945-1948
4 p.
artikel
153 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs Munteanu, D.
2015
100-101 9-10 p. 1522-1526
5 p.
artikel
154 Dynamical IMC-growth calculation Meinshausen, L.
2015
100-101 9-10 p. 1832-1837
6 p.
artikel
155 Editorial 2001
100-101 9-10 p. ix-
1 p.
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156 Editorial Boit, Christian
2014
100-101 9-10 p. 1637-
1 p.
artikel
157 Editorial Ciappa, Mauro
2012
100-101 9-10 p. 1751-1752
2 p.
artikel
158 Editorial Bafleur, Marise
2015
100-101 9-10 p. 1269-1270
2 p.
artikel
159 Editorial Board 2015
100-101 9-10 p. IFC-
1 p.
artikel
160 Effect of electron–electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs Lee, Seonhaeng
2012
100-101 9-10 p. 1905-1908
4 p.
artikel
161 Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors Chevtchenko, S.A.
2014
100-101 9-10 p. 2191-2195
5 p.
artikel
162 Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices Litzenberger, M.
2001
100-101 9-10 p. 1385-1390
6 p.
artikel
163 Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes Nshanian, T.
2012
100-101 9-10 p. 2039-2042
4 p.
artikel
164 Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs Lee, Jae Hoon
2015
100-101 9-10 p. 1456-1459
4 p.
artikel
165 Effect of the functionalization process on the performance of SiGe MEM resonators used for bio-molecular sensing Khaled, A.
2012
100-101 9-10 p. 2272-2277
6 p.
artikel
166 Effect of thermal aging on the electrical resistivity of Fe-added SAC105 solder alloys Sabri, M.F.M.
2015
100-101 9-10 p. 1882-1885
4 p.
artikel
167 Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs Bisi, D.
2015
100-101 9-10 p. 1662-1666
5 p.
artikel
168 Effects of constant voltage and constant current stress in PCBM:P3HT solar cells Cester, A.
2015
100-101 9-10 p. 1795-1799
5 p.
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169 Effects of 1064 nm laser on MOS capacitor Llido, R.
2012
100-101 9-10 p. 1816-1821
6 p.
artikel
170 Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics Wrachien, N.
2015
100-101 9-10 p. 1790-1794
5 p.
artikel
171 Effects of thermal cycling on aluminum metallization of power diodes Brincker, M.
2015
100-101 9-10 p. 1988-1991
4 p.
artikel
172 Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials – An adaptive calibration algorithm Scholz, P.
2014
100-101 9-10 p. 1794-1797
4 p.
artikel
173 Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates Rodríguez, A.
2015
100-101 9-10 p. 1442-1445
4 p.
artikel
174 Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation Borrel, N.
2015
100-101 9-10 p. 1592-1599
8 p.
artikel
175 Electric passivation of interface traps at drain junction space charge region in p-MOS transistors Chen, G.
2001
100-101 9-10 p. 1427-1431
5 p.
artikel
176 Electromigration failure in a copper dual-damascene structure with a through silicon via de Orio, R.L.
2012
100-101 9-10 p. 1981-1986
6 p.
artikel
177 Electromigration Performance of Multi-level Damascene Copper Interconnects Yokogawa, S.
2001
100-101 9-10 p. 1409-1416
8 p.
artikel
178 Electromigration reliability of open TSV structures Zisser, W.H.
2014
100-101 9-10 p. 2133-2137
5 p.
artikel
179 Electronic counterfeit detection based on the measurement of electromagnetic fingerprint Huang, H.
2015
100-101 9-10 p. 2050-2054
5 p.
artikel
180 Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package Reverdy, A.
2014
100-101 9-10 p. 2075-2080
6 p.
artikel
181 Electro-thermal simulation in the time domain of GaN HEMT for RF switch-mode amplifier Ono, Satoshi
2012
100-101 9-10 p. 2224-2227
4 p.
artikel
182 Eliminating infant mortality in metallized film capacitors by defect detection McCluskey, F.P.
2014
100-101 9-10 p. 1818-1822
5 p.
artikel
183 Empirical BEOL-TDDB evaluation based on I(t)-trace analysis Aubel, O.
2014
100-101 9-10 p. 1671-1674
4 p.
artikel
184 Energy distribution of positive charges in high-k dielectric Hatta, S.W.M.
2014
100-101 9-10 p. 2329-2333
5 p.
artikel
185 Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement Eichenseer, C.
2015
100-101 9-10 p. 1369-1372
4 p.
artikel
186 Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress Kim, Dongwoo
2012
100-101 9-10 p. 1901-1904
4 p.
artikel
187 Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure Wrachien, N.
2012
100-101 9-10 p. 2490-2494
5 p.
artikel
188 Enhanced power cycling capability of SiC Schottky diodes using press pack contacts Banu, V.
2012
100-101 9-10 p. 2250-2255
6 p.
artikel
189 Entropy-based sensor selection for condition monitoring and prognostics of aircraft engine Liu, Liansheng
2015
100-101 9-10 p. 2092-2096
5 p.
artikel
190 Envelope probability and EFAST-based sensitivity analysis method for electronic prognostic uncertainty quantification Sun, Bo
2015
100-101 9-10 p. 1384-1390
7 p.
artikel
191 Environmental Effects on Interfacial Adhesion Lane, M.W.
2001
100-101 9-10 p. 1615-1624
10 p.
artikel
192 ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique Rigato, Matteo
2015
100-101 9-10 p. 1471-1475
5 p.
artikel
193 ESD design challenges in state-of-the-art analog technologies Boselli, G.
2012
100-101 9-10 p. 1769-1775
7 p.
artikel
194 ESD-Induced Circuit Performance Degradation in RFICs Gonf, K.
2001
100-101 9-10 p. 1379-1383
5 p.
artikel
195 ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms Dal Lago, M.
2014
100-101 9-10 p. 2138-2141
4 p.
artikel
196 ESD protection structures for BCD5 smart power technologies Sponton, L.
2001
100-101 9-10 p. 1683-1687
5 p.
artikel
197 Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS Torres Matabosch, N.
2012
100-101 9-10 p. 2310-2313
4 p.
artikel
198 Evaluating board level solder interconnects reliability using vibration test methods Liu, Y.
2014
100-101 9-10 p. 2053-2057
5 p.
artikel
199 Evaluation by three-point-bend and ball-on-ring tests of thinning process on silicon die strength Barnat, Samed
2012
100-101 9-10 p. 2278-2282
5 p.
artikel
200 Evaluation method for the control of process induced defect in deep sub-micron device fabrication Ikeda, Kazuko
2001
100-101 9-10 p. 1525-1533
9 p.
artikel
201 Evaluation new corner stress relief structure layout for high robust metallization Hein, V.
2014
100-101 9-10 p. 1977-1981
5 p.
artikel
202 Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour Landesman, J.P.
2015
100-101 9-10 p. 1750-1753
4 p.
artikel
203 Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test Lambert, B.
2012
100-101 9-10 p. 2184-2187
4 p.
artikel
204 Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses Lambert, B.
2001
100-101 9-10 p. 1573-1578
6 p.
artikel
205 Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields Ciappa, Mauro
2014
100-101 9-10 p. 2081-2087
7 p.
artikel
206 Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET Tala-Ighil, B.
2015
100-101 9-10 p. 1512-1516
5 p.
artikel
207 Experimental investigation on the evolution of a conducted-EMI buck converter after thermal aging tests of the MOSFET Douzi, S.
2015
100-101 9-10 p. 1391-1394
4 p.
artikel
208 Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs Kang, Mingu
2012
100-101 9-10 p. 1936-1939
4 p.
artikel
209 Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT Abbate, C.
2015
100-101 9-10 p. 1496-1500
5 p.
artikel
210 Experimental tests and reliability assessment of electronic ballast system Catelani, M.
2012
100-101 9-10 p. 1833-1836
4 p.
artikel
211 Exploiting reliable features of asynchronous circuits for designing low-voltage components in FD-SOI technology Rolloff, Otto Aureliano
2015
100-101 9-10 p. 1302-1306
5 p.
artikel
212 Exploring the feasibility of selective hardening for combinational logic Pagliarini, S.N.
2012
100-101 9-10 p. 1843-1847
5 p.
artikel
213 Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range Ciappa, Mauro
2014
100-101 9-10 p. 2123-2127
5 p.
artikel
214 Exploring the use of approximate TMR to mask transient faults in logic with low area overhead Gomes, Iuri A.C.
2015
100-101 9-10 p. 2072-2076
5 p.
artikel
215 Fabrication and reliability of dye solar cells: A resonance Raman scattering study Quatela, A.
2012
100-101 9-10 p. 2487-2489
3 p.
artikel
216 Fabrication of advanced probes for atomic force microscopy using focused ion beam Ageev, O.A.
2015
100-101 9-10 p. 2131-2134
4 p.
artikel
217 Failure analysis and reliability on system level Jacob, P.
2015
100-101 9-10 p. 2154-2158
5 p.
artikel
218 Failure analysis of ESD-stressed SiC MESFET Phulpin, T.
2015
100-101 9-10 p. 1542-1548
7 p.
artikel
219 Failure analysis of power devices based on real-time monitoring Watanabe, A.
2015
100-101 9-10 p. 2032-2035
4 p.
artikel
220 Failure analysis on recovering low resistive via in mixed-mode device Castignolles, M.
2015
100-101 9-10 p. 1574-1578
5 p.
artikel
221 Failure and reliability analysis of STT-MRAM Zhao, W.S.
2012
100-101 9-10 p. 1848-1852
5 p.
artikel
222 Failure causes and mechanisms of retrofit LED lamps De Santi, C.
2015
100-101 9-10 p. 1765-1769
5 p.
artikel
223 Failure mechanism and reliability test method for USB interface circuitry on CPUs for mobile devices Jeong, Jae-Seong
2012
100-101 9-10 p. 2014-2018
5 p.
artikel
224 Failure mechanisms in blue InGaN/GaN LEDs for high power operation Chernyakov, A.E.
2012
100-101 9-10 p. 2180-2183
4 p.
artikel
225 Failure mechanisms of microbolometer thermal imager sensors using chip-scale packaging Elßner, Michael
2015
100-101 9-10 p. 1901-1905
5 p.
artikel
226 Failure mechanism study and immunity modeling of an embedded analog-to-digital converter based on immunity measurements Ayed, A.
2015
100-101 9-10 p. 2067-2071
5 p.
artikel
227 Failure signatures on 0.25μm GaN HEMTs for high-power RF applications Stocco, A.
2014
100-101 9-10 p. 2237-2241
5 p.
artikel
228 Failures in ultrathin oxides: Stored energy or carrier energy driven? Bruyére, S.
2001
100-101 9-10 p. 1367-1372
6 p.
artikel
229 Failures on DC–DC modules following a change of wire bonding material from gold to copper Belfort, Y.
2015
100-101 9-10 p. 2003-2006
4 p.
artikel
230 Fault isolation in a case study of failure analysis on Metal–Insulator–Metal capacitor structures Giuffrida, V.
2015
100-101 9-10 p. 1640-1643
4 p.
artikel
231 FIB-induced electro-optical alterations in a DFB InP laser diode Mura, G.
2014
100-101 9-10 p. 2151-2153
3 p.
artikel
232 FIB/TEM analysis supported by μ-probing approach to identify via marginality Sanna, Marco
2012
100-101 9-10 p. 2050-2053
4 p.
artikel
233 Field failure mechanism study of solder interconnection for crystalline silicon photovoltaic module Jeong, Jae-Seong
2012
100-101 9-10 p. 2326-2330
5 p.
artikel
234 Field plate related reliability improvements in GaN-on-Si HEMTs Chini, A.
2012
100-101 9-10 p. 2153-2158
6 p.
artikel
235 Focused high- and low-energy ion milling for TEM specimen preparation Lotnyk, A.
2015
100-101 9-10 p. 2119-2125
7 p.
artikel
236 Focused ion beam contact to non-volatile memory cells Helfmeier, Clemens
2014
100-101 9-10 p. 1798-1801
4 p.
artikel
237 Formation of coupled-cavities in quantum cascade lasers using focused ion beam milling Czerwinski, Andrzej
2015
100-101 9-10 p. 2142-2146
5 p.
artikel
238 Fretting corrosion: Analysis of the failure mechanism for low voltage drives applications Mengotti, E.
2014
100-101 9-10 p. 2109-2114
6 p.
artikel
239 Front Side and Backside OBIT Mappings applied to Single Event Transient Testing Lewis, D.
2001
100-101 9-10 p. 1471-1476
6 p.
artikel
240 Full-Chip Reliability Simulation for VDSM Integrated Circuits Wu, Lifeng
2001
100-101 9-10 p. 1273-1278
6 p.
artikel
241 Gate-lag effects in AlGaAs/GaAs power HFET's Borgarino, M.
2001
100-101 9-10 p. 1585-1589
5 p.
artikel
242 General linearized model use for High Power Reliability Assessment test results: Conditions, procedure and case study Bergès, C.
2015
100-101 9-10 p. 1346-1350
5 p.
artikel
243 Harsh environment application of electronics – Reliability of copper wiring and testability thereof Rathgeber, S.
2012
100-101 9-10 p. 2452-2456
5 p.
artikel
244 HCS degradation of 5nm oxide high-voltage PLDMOS Olk, C.
2014
100-101 9-10 p. 1883-1886
4 p.
artikel
245 High performance electronics in long lifetime, continuous operation, industrial products: The art of balancing conflicting interests Banc, C.
2012
100-101 9-10 p. 1797-1802
6 p.
artikel
246 High performance thermography with InGaAs photon counting camera Bascoul, G.
2012
100-101 9-10 p. 2087-2092
6 p.
artikel
247 High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology Rey-Tauriac, Y.
2001
100-101 9-10 p. 1707-1712
6 p.
artikel
248 High-resolution in-situ of gold electromigration: test time reduction Croes, K.
2001
100-101 9-10 p. 1439-1442
4 p.
artikel
249 High-resolution X-ray computed tomography of through silicon vias for RF MEMS integrated passive device applications de Veen, P.J.
2015
100-101 9-10 p. 1644-1648
5 p.
artikel
250 High temperature degradation of palladium coated copper bond wires Krinke, J.C.
2014
100-101 9-10 p. 1995-1999
5 p.
artikel
251 High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications Fleury, Clément
2015
100-101 9-10 p. 1687-1691
5 p.
artikel
252 High temperature pulsed-gate robustness testing of SiC power MOSFETs Fayyaz, A.
2015
100-101 9-10 p. 1724-1728
5 p.
artikel
253 High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substrates Lahokallio, S.
2014
100-101 9-10 p. 2017-2022
6 p.
artikel
254 High temperature reliability of μtrench Phase-Change Memory devices Navarro, G.
2012
100-101 9-10 p. 1928-1931
4 p.
artikel
255 High temperature storage reliability investigation of the Al–Cu wire bond interface Pelzer, R.
2012
100-101 9-10 p. 1966-1970
5 p.
artikel
256 High-throughput and full automatic DBC-module screening tester for high power IGBT Tsukuda, M.
2015
100-101 9-10 p. 1363-1368
6 p.
artikel
257 Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs Choi, Jin Hyung
2014
100-101 9-10 p. 2325-2328
4 p.
artikel
258 Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications Revil, N.
2001
100-101 9-10 p. 1307-1312
6 p.
artikel
259 HRA techniques; A selection matrix Gerdes, V.
1995
100-101 9-10 p. 1215-1231
17 p.
artikel
260 Hybrid-cell register files design for improving NBTI reliability Gong, N.
2012
100-101 9-10 p. 1865-1869
5 p.
artikel
261 Identification and analysis of power substrates degradations subjected to severe aging tests Woirgard, E.
2015
100-101 9-10 p. 1961-1965
5 p.
artikel
262 Impact of active thermal management on power electronics design Andresen, M.
2014
100-101 9-10 p. 1935-1939
5 p.
artikel
263 Impact of aluminum wire and ribbon bonding technologies on D2PAK package reliability during thermal cycling applications Jacques, S.
2015
100-101 9-10 p. 1821-1825
5 p.
artikel
264 Impact of dynamic voltage scaling and thermal factors on SRAM reliability Rosa, F.R.
2015
100-101 9-10 p. 1486-1490
5 p.
artikel
265 Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories Della Marca, V.
2014
100-101 9-10 p. 2262-2265
4 p.
artikel
266 Impact of gate drive voltage on avalanche robustness of trench IGBTs Riccio, M.
2014
100-101 9-10 p. 1828-1832
5 p.
artikel
267 Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs Rossetto, I.
2015
100-101 9-10 p. 1692-1696
5 p.
artikel
268 Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests Belaïd, M.A.
2015
100-101 9-10 p. 2041-2044
4 p.
artikel
269 Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiO x interfacial layer Shubhakar, K.
2014
100-101 9-10 p. 1712-1717
6 p.
artikel
270 Impact of PVT variability on 20nm FinFET standard cells Zimpeck, A.L.
2015
100-101 9-10 p. 1379-1383
5 p.
artikel
271 Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs Gerrer, L.
2012
100-101 9-10 p. 1918-1923
6 p.
artikel
272 Impacts of plasma process-induced damage on MOSFET parameter variability and reliability Eriguchi, Koji
2015
100-101 9-10 p. 1464-1470
7 p.
artikel
273 Improved current filament control during Zener diode zapping Roig, J.
2012
100-101 9-10 p. 2368-2373
6 p.
artikel
274 Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating Toutah, H.
2001
100-101 9-10 p. 1325-1329
5 p.
artikel
275 Improvement in the moisture stability of CaS:Eu phosphor applied in light-emitting diodes by titania surface coating Gang, So-Ra
2012
100-101 9-10 p. 2174-2179
6 p.
artikel
276 Improvement of MOSFET matching characterization with calibrated multiplexed test structure Welter, L.
2015
100-101 9-10 p. 1328-1333
6 p.
artikel
277 Improvement of signal to noise ratio in electro optical probing technique by wavelets filtering Boscaro, A.
2015
100-101 9-10 p. 1585-1591
7 p.
artikel
278 Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS Dutertre, J.M.
2014
100-101 9-10 p. 2289-2294
6 p.
artikel
279 Improving the FE simulation of molded packages using warpage measurements Huber, S.
2014
100-101 9-10 p. 1862-1866
5 p.
artikel
280 In-depth investigation of metallization aging in power MOSFETs Ruffilli, R.
2015
100-101 9-10 p. 1966-1970
5 p.
artikel
281 Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits Rossetto, I.
2012
100-101 9-10 p. 2093-2097
5 p.
artikel
282 Induced charging phenomena on SiNx dielectric films used in RF MEMS capacitive switches Koutsoureli, M.
2015
100-101 9-10 p. 1911-1915
5 p.
artikel
283 Influence of charge balance on the robustness of trench-based super junction diodes Villamor-Baliarda, A.
2012
100-101 9-10 p. 2409-2413
5 p.
artikel
284 Influence of dicing damages on the thermo-mechanical reliability of bare-chip assemblies Steiert, M.
2014
100-101 9-10 p. 1686-1691
6 p.
artikel
285 Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs Rossetto, I.
2014
100-101 9-10 p. 2248-2252
5 p.
artikel
286 Influence of mobile ion in organic material used in semiconductor devices Tan, Y.Y.
2014
100-101 9-10 p. 2034-2038
5 p.
artikel
287 Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing Petrov, A.S.
2014
100-101 9-10 p. 1745-1748
4 p.
artikel
288 Infrared Thermography application to functional and failure analysis of electron devices and circuits Irace, Andrea
2012
100-101 9-10 p. 2019-2023
5 p.
artikel
289 Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs Bravaix, A.
2001
100-101 9-10 p. 1313-1318
6 p.
artikel
290 Inside front cover - Editorial board 2014
100-101 9-10 p. IFC-
1 p.
artikel
291 Inside front cover - Editorial board 2012
100-101 9-10 p. OFC-
1 p.
artikel
292 Integrated power transistor size optimisation Bosc, J.M.
2001
100-101 9-10 p. 1671-1676
6 p.
artikel
293 Integrated vehicle health management: An approach to dealing with lifetime prediction considerations on relays Wileman, Andrew J.
2015
100-101 9-10 p. 2165-2171
7 p.
artikel
294 Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials März, B.
2014
100-101 9-10 p. 2000-2005
6 p.
artikel
295 Intrinsic stress analysis of tungsten-lined open TSVs Filipovic, Lado
2015
100-101 9-10 p. 1843-1848
6 p.
artikel
296 Introduction Rawicz, Andrew H.
1995
100-101 9-10 p. 1207-1213
7 p.
artikel
297 Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits Scavennec, A.
2001
100-101 9-10 p. 1563-1566
4 p.
artikel
298 Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices Mario, Poschgan
2012
100-101 9-10 p. 2115-2119
5 p.
artikel
299 Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs Rzin, M.
2015
100-101 9-10 p. 1672-1676
5 p.
artikel
300 Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols Chiquet, Philippe
2012
100-101 9-10 p. 1895-1900
6 p.
artikel
301 Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs Meneghesso, G.
2001
100-101 9-10 p. 1609-1614
6 p.
artikel
302 Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination Kim, Dae Hyun
2015
100-101 9-10 p. 1811-1814
4 p.
artikel
303 Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices Adokanou, K.
2015
100-101 9-10 p. 1697-1702
6 p.
artikel
304 Investigations on electro-optical and thermal performances degradation of high power density GaAs-based laser diode in vacuum environment Michaud, J.
2015
100-101 9-10 p. 1746-1749
4 p.
artikel
305 IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors Marko, P.
2012
100-101 9-10 p. 2194-2199
6 p.
artikel
306 Joining and package technology for 175°C Tj increasing reliability in automotive applications Dietrich, Peter
2014
100-101 9-10 p. 1901-1905
5 p.
artikel
307 Junction temperature estimation method for a 600V, 30A IGBT module during converter operation Choi, U.M.
2015
100-101 9-10 p. 2022-2026
5 p.
artikel
308 K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability Persano, A.
2012
100-101 9-10 p. 2245-2249
5 p.
artikel
309 Laser diode COFD analysis by thermoreflectance microscopy Dilhaire, Stefan
2001
100-101 9-10 p. 1597-1601
5 p.
artikel
310 Latent gate oxide defects case studies Goxe, J.
2015
100-101 9-10 p. 1607-1610
4 p.
artikel
311 Life time comparison of LED package and the self-ballasted LED lamps by simple linear regression analysis Yoon, Y.G.
2015
100-101 9-10 p. 1779-1783
5 p.
artikel
312 Lifetime estimation of high-temperature high-voltage polymer film capacitor based on capacitance loss Makdessi, M.
2015
100-101 9-10 p. 2012-2016
5 p.
artikel
313 Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehicles Thoben, M.
2014
100-101 9-10 p. 1806-1812
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314 Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs Azzopardi, S.
2001
100-101 9-10 p. 1731-1736
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315 Local thickness and composition analysis of TEM lamellae in the FIB Lang, C.
2014
100-101 9-10 p. 1790-1793
4 p.
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316 Long-term degradation mechanisms of mid-power LEDs for lighting applications Buffolo, M.
2015
100-101 9-10 p. 1754-1758
5 p.
artikel
317 Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs Meneghesso, G.
2001
100-101 9-10 p. 1579-1584
6 p.
artikel
318 Low frequency noise and reliability properties pf 0.12 μm CMOS devices with Ta2O5 as gate dielectrics Fadlallah, M.
2001
100-101 9-10 p. 1361-1366
6 p.
artikel
319 Low magnetic field Impact on NBTI degradation Merah, S.M.
2015
100-101 9-10 p. 1460-1463
4 p.
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320 Low temperature FIB cross section: Application to indium micro bumps Dantas de Morais, L.
2014
100-101 9-10 p. 1802-1805
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321 Magnetic Field Imaging for non destructive 3D IC testing Gaudestad, J.
2014
100-101 9-10 p. 2093-2098
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322 Magnetic imaging for resistive, capacitive and inductive devices; from theory to piezo actuator failure localization Courjault, N.
2015
100-101 9-10 p. 1622-1627
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323 Mechanical analysis of press-pack IGBTs Poller, T.
2012
100-101 9-10 p. 2397-2402
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324 Mechanical Reliability of MEMS-structures under shock load Wagner, U.
2001
100-101 9-10 p. 1657-1662
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325 Mechanical stress investigation after technological process in Deep Trench Termination DT2 using BenzoCycloButene as dielectric material Arbess, H.
2015
100-101 9-10 p. 2017-2021
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326 Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs Stojadinovic, N.
2001
100-101 9-10 p. 1373-1378
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artikel
327 MEMS packaging and reliability: An undividable couple Tilmans, H.A.C.
2012
100-101 9-10 p. 2228-2234
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328 Metal fatigue in copper pillar Flip Chip BGA: A refined acceleration model for the aluminium pad cracking failure mechanism Alberti, R.
2015
100-101 9-10 p. 1838-1842
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329 Metallized polymer film capacitors ageing law based on capacitance degradation Makdessi, M.
2014
100-101 9-10 p. 1823-1827
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330 Microstructure of Sn–1Ag–0.5Cu solder alloy bearing Fe under salt spray test Nordin, N.I.M.
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100-101 9-10 p. 2044-2047
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331 Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers Meinshausen, L.
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100-101 9-10 p. 1827-1832
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332 MIM capacitor-related early-stage field failures Lu, Jia
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333 Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130nm technology p-channel transistors Rott, Gunnar Andreas
2014
100-101 9-10 p. 2310-2314
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artikel
334 Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology Kuenzig, T.
2012
100-101 9-10 p. 2235-2239
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335 Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices de Filippis, Stefano
2012
100-101 9-10 p. 2374-2379
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336 Modeling Thermal Laser Stimulation Beaudoin, F.
2001
100-101 9-10 p. 1477-1482
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337 Modelling the impact of refinishing processes on COTS components for use in aerospace applications Stoyanov, S.
2015
100-101 9-10 p. 1271-1279
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338 Moisture absorption and desorption in wafer level chip scale packages Rongen, K.
2015
100-101 9-10 p. 1872-1876
5 p.
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339 Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films Rückerl, A.
2014
100-101 9-10 p. 1741-1744
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340 Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies Ciappa, Mauro
2012
100-101 9-10 p. 2139-2143
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341 Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures Iglesias, V.
2012
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342 NBTI degradation in STI-based LDMOSFETs He, Yandong
2014
100-101 9-10 p. 1940-1943
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artikel
343 Near miss reporting in the chemical process industry: An overview van der Schaaf, Tjerk W.
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100-101 9-10 p. 1233-1243
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344 New insights on the PBTI phenomena in SiON pMOSFETs Rott, K.
2012
100-101 9-10 p. 1891-1894
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345 Nitrogen-Vacancy centers in diamond for current imaging at the redistributive layer level of Integrated Circuits Nowodzinski, A.
2015
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346 Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors Ackaert, J.
2001
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2001
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5 p.
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348 Novel techniques for dopant contrast analysis on real IC structures Jatzkowski, Joerg
2012
100-101 9-10 p. 2098-2103
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349 Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode Possamai Bastos, R.
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351 Numerical analysis and experimental tests for solder joints power cycling optimization Cova, P.
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352 Online test method of FPGA solder joint resistance with low power consumption Wang, Nantian
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100-101 9-10 p. 1867-1871
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353 On the use of operations research models for maintenance decision making Dekker, Rommert
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100-101 9-10 p. 1321-1331
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354 Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects Forster, S.
2001
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355 Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology Arbess, H.
2015
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356 Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations Tang, B.J.
2014
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357 Optimum Si thickness for backside detection of photon emission using Si-CCD Glowacki, A.
2012
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358 Overload robust IGBT design for SSCB application Supono, I.
2014
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359 Parallel algorithm for finding modules of large-scale coherent fault trees Li, Z.F.
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360 Particle filter approach to lifetime prediction for microelectronic devices and systems with multiple failure mechanisms Raghavan, Nagarajan
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2014
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362 Pattern image enhancement by extended depth of field Chef, S.
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365 Performance drifts of N-MOSFETs under pulsed RF life test Belaïd, M.A.
2014
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366 Phosphors for LED-based light sources: Thermal properties and reliability issues Dal Lago, M.
2012
100-101 9-10 p. 2164-2167
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367 Photothermal activated failure mechanism in polymer-based packaging of low power InGaN/GaN MQW LED under active storage Baillot, Raphael
2015
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368 Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test Fonder, J.-B.
2012
100-101 9-10 p. 2205-2209
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369 Physically-based extraction methodology for accurate MOSFET degradation assessment Torrente, Giulio
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370 Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes Hu, J.
2014
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372 Plasma FIB: Enlarge your field of view and your field of applications Garnier, A.
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373 Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology Gagnard, X.
2001
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375 Power grid redundant path contribution in system on chip (SoC) robustness against electromigration Ouattara, Boukary
2014
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377 Power modules die attach: A comprehensive evolution of the nanosilver sintering physical properties versus its porosity Youssef, T.
2015
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379 Precise nanofabrication with multiple ion beams for advanced circuit edit Wu, Huimeng
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380 Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool Weulersse, C.
2015
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381 Prediction of supercapacitors floating ageing with surface electrode interface based ageing law German, R.
2014
100-101 9-10 p. 1813-1817
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382 Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations Meinhardt, C.
2014
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383 Preliminary failure-mode characterization of emerging direct-lead-bonding power module. Comparison with standard wire-bonding interconnection Sanfins, W.
2015
100-101 9-10 p. 1956-1960
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384 Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory Raghavan, Nagarajan
2015
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385 Probabilistic risk assessment: An historic overview from determinism to probabilism van Otterloo, R.W.
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386 Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory Raghavan, Nagarajan
2014
100-101 9-10 p. 1729-1734
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387 Protective coatings of electronics under harsh thermal shock Pippola, J.
2014
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388 Proton induced trapping effect on space compatible GaN HEMTs Stocco, A.
2014
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389 Purpose, potential and realization of chip-attached micro-pin fin heat sinks Conrad, M.
2015
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390 Pushing toward the limits of acceleration: Example on wire-bond assemblies Jullien, J.B.
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391 Qualification procedure for moisture in embedded capacitors Frémont, Hélène
2014
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392 Quantifying uncertainty in reliability and safety studies O'Connor, Patrick D.T.
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393 Quantitative Scanning Microwave Microscopy: A calibration flow Schweinböck, T.
2014
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395 Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation Ohyama, H.
2001
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396 Radiation-induced single event transients modeling and testing on nanometric flash-based technologies Sterpone, L.
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397 Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation Munteanu, D.
2014
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398 μ-Raman spectroscopy for stress analysis in high power silicon devices Kociniewski, T.
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399 Read disturb on flash memories: Study on temperature annealing effect Cola, L.
2012
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400 Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustic Tomography (SAT) Watanabe, A.
2012
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2012
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2014
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407 Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles Wang, Y.
2014
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408 Reliability estimation with uncertainties consideration for high power IGBTs in 2.3MW wind turbine converter system Kostandyan, E.E.
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409 Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation De Pasquale, G.
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100-101 9-10 p. 1837-1842
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artikel
469 Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach Raghavan, Nagarajan
2015
100-101 9-10 p. 1422-1426
5 p.
artikel
470 Step-stress accelerated testing of high-power LED lamps based on subsystem isolation method Cai, Miao
2015
100-101 9-10 p. 1784-1789
6 p.
artikel
471 Stress analyses of high spatial resolution on TSV and BEoL structures Vogel, D.
2014
100-101 9-10 p. 1963-1968
6 p.
artikel
472 Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states Wrachien, N.
2014
100-101 9-10 p. 1638-1642
5 p.
artikel
473 Stress induced leakage current at low field in ultra thin oxides Lime, F.
2001
100-101 9-10 p. 1421-1425
5 p.
artikel
474 Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II Takaishi, J.
2014
100-101 9-10 p. 1891-1896
6 p.
artikel
475 Study of EM void nucleation and mechanic relaxation effects Marti, G.
2014
100-101 9-10 p. 1692-1696
5 p.
artikel
476 Study of glass frit induced stiction using a micromirror array Ling, F.Z.
2012
100-101 9-10 p. 2256-2260
5 p.
artikel
477 Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling Cortés, I.
2012
100-101 9-10 p. 2471-2476
6 p.
artikel
478 Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs Chen, Cheng
2015
100-101 9-10 p. 1708-1713
6 p.
artikel
479 Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules Dugal, F.
2014
100-101 9-10 p. 1856-1861
6 p.
artikel
480 Study of the UBM to copper interface robustness of solder bumps in flip chip packages Dreybrodt, J.
2014
100-101 9-10 p. 1969-1971
3 p.
artikel
481 Study on specific effects of high frequency ripple currents and temperature on supercapacitors ageing German, R.
2015
100-101 9-10 p. 2027-2031
5 p.
artikel
482 Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies Puchner, H.
2001
100-101 9-10 p. 1319-1324
6 p.
artikel
483 Subsurface analysis of semiconductor structures with helium ion microscopy van Gastel, Raoul
2012
100-101 9-10 p. 2104-2109
6 p.
artikel
484 Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology Galy, Ph.
2012
100-101 9-10 p. 1998-2004
7 p.
artikel
485 System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown Liu, Taizhi
2015
100-101 9-10 p. 1334-1340
7 p.
artikel
486 TCAD for reliability Pfäffli, P.
2012
100-101 9-10 p. 1761-1768
8 p.
artikel
487 TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition Suzuki, Hiroshi
2015
100-101 9-10 p. 1976-1980
5 p.
artikel
488 Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser Neitzert, H.C.
2014
100-101 9-10 p. 2142-2146
5 p.
artikel
489 Temperature effects on the bulk discharge current of dielectric films of MEMS capacitive switches Koutsoureli, M.
2012
100-101 9-10 p. 2240-2244
5 p.
artikel
490 Temperature effects on the ruggedness of SiC Schottky diodes under surge current León, J.
2014
100-101 9-10 p. 2207-2212
6 p.
artikel
491 TEM sample preparation of a SEM cross section using electron beam induced deposition of carbon Ricci, E.
2015
100-101 9-10 p. 2126-2130
5 p.
artikel
492 Test methodology of a new upset mechanism induced by protons in deep sub-micron devices Weulersse, C.
2012
100-101 9-10 p. 2482-2486
5 p.
artikel
493 Test setup for reliability studies of DDR2 SDRAM Versen, M.
2015
100-101 9-10 p. 1395-1399
5 p.
artikel
494 The degradation mechanism of flexible a-Si:H/μc-Si:H photovoltaic modules Jeong, Jae-Seong
2015
100-101 9-10 p. 1804-1810
7 p.
artikel
495 The degradation of multi-crystalline silicon solar cells after damp heat tests Oh, Wonwook
2014
100-101 9-10 p. 2176-2179
4 p.
artikel
496 The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system Cha, Soonyoung
2015
100-101 9-10 p. 1404-1411
8 p.
artikel
497 The effect of gate overlap on the device degradation in IGZO thin film transistors Kim, Dae Hyun
2014
100-101 9-10 p. 2167-2170
4 p.
artikel
498 The effect of iron and bismuth addition on the microstructural, mechanical, and thermal properties of Sn–1Ag–0.5Cu solder alloy Mahdavifard, M.H.
2015
100-101 9-10 p. 1886-1890
5 p.
artikel
499 The effects of etching and deposition on the performance and stress evolution of open through silicon vias Filipovic, Lado
2014
100-101 9-10 p. 1953-1958
6 p.
artikel
500 The influence of liners with Ti, Ta or Ru finish on thin Cu films Gross, David
2014
100-101 9-10 p. 1877-1882
6 p.
artikel
501 The optimum adjustment of motor protection relays in an industrial complex Massee, P.
1995
100-101 9-10 p. 1245-1256
12 p.
artikel
502 Theoretical Investigation of an Equivalent Laser LET Pouget, V.
2001
100-101 9-10 p. 1513-1518
6 p.
artikel
503 Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures Bychikhin, S.
2001
100-101 9-10 p. 1501-1506
6 p.
artikel
504 Thermal and mechanical effects of voids within flip chip soldering in LED packages Liu, Yang
2014
100-101 9-10 p. 2028-2033
6 p.
artikel
505 Thermal-aware design and fault analysis of a DC/DC parallel resonant converter De Falco, G.
2014
100-101 9-10 p. 1833-1838
6 p.
artikel
506 Thermal cycle reliability of Cu-nanoparticle joint Ishizaki, T.
2015
100-101 9-10 p. 1861-1866
6 p.
artikel
507 Thermal cycling analysis of high temperature die-attach materials Navarro, L.A.
2012
100-101 9-10 p. 2314-2320
7 p.
artikel
508 Thermal damage in SiC Schottky diodes induced by SE heavy ions Abbate, C.
2014
100-101 9-10 p. 2200-2206
7 p.
artikel
509 Thermal fatigue in solder joints of Ag-Pd and Ag-Pt metallized LTCC modules Rautioaho, R.
2001
100-101 9-10 p. 1643-1648
6 p.
artikel
510 Thermal instability effects in SiC Power MOSFETs Castellazzi, Alberto
2012
100-101 9-10 p. 2414-2419
6 p.
artikel
511 Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage De Santi, C.
2014
100-101 9-10 p. 2147-2150
4 p.
artikel
512 Thermal management and reliability of multi-chip power modules Lefranc, G.
2001
100-101 9-10 p. 1663-1669
7 p.
artikel
513 Thermal modeling and design of power converters with tight thermal constraints Cova, P.
2012
100-101 9-10 p. 2391-2396
6 p.
artikel
514 Thermal overstress of Cu wire under pulsed current condition Cason, M.
2012
100-101 9-10 p. 2010-2013
4 p.
artikel
515 Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions Czerny, B.
2012
100-101 9-10 p. 2353-2357
5 p.
artikel
516 Thermomechanical modeling and simulation of a silicone gel for power electronic devices Haussener, M.
2015
100-101 9-10 p. 2045-2049
5 p.
artikel
517 Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model Zhang, Rui
2012
100-101 9-10 p. 2331-2335
5 p.
artikel
518 Thermomechanical stress analysis of Cu/low-k dielectric interconnect schemes Mathewson, Alan
2001
100-101 9-10 p. 1637-1641
5 p.
artikel
519 Thermoreflectance mapping observation of Power MOSFET under UIS avalanche breakdown condition Endo, Koichi
2015
100-101 9-10 p. 1628-1633
6 p.
artikel
520 The role of failure analysis in establishing design rules for reliable plastic products Spoormaker, Jan L.
1995
100-101 9-10 p. 1275-1284
10 p.
artikel
521 The temperature dependence of mixed mode degradation in bipolar transistors Sasse, G.T.
2012
100-101 9-10 p. 1913-1917
5 p.
artikel
522 The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors Tošić Golo, N.
2001
100-101 9-10 p. 1391-1396
6 p.
artikel
523 Three-Dimensional Voids Simulation in chip Metallization Structures: a Contribution to Reliability Evaluation Dalleau, D.
2001
100-101 9-10 p. 1625-1630
6 p.
artikel
524 Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors Park, Suehye
2012
100-101 9-10 p. 2215-2219
5 p.
artikel
525 Through silicon in-circuit logic analysis for localizing logic pattern failures Bruce, M.R.
2012
100-101 9-10 p. 2043-2049
7 p.
artikel
526 Time dependent dielectric breakdown physics – Models revisited McPherson, J.W.
2012
100-101 9-10 p. 1753-1760
8 p.
artikel
527 Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis Cinà, L.
2012
100-101 9-10 p. 2077-2080
4 p.
artikel
528 Top-down delayering to expose large inspection area on die side-edge with Platinum (Pt) deposition technique Yap, H.H.
2015
100-101 9-10 p. 1611-1616
6 p.
artikel
529 Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide Potter, Kenneth
2014
100-101 9-10 p. 2339-2343
5 p.
artikel
530 Traps localization and analysis in GaN HEMTs Chini, A.
2014
100-101 9-10 p. 2222-2226
5 p.
artikel
531 Turn-off instabilities in large area IGBTs Abbate, C.
2014
100-101 9-10 p. 1927-1934
8 p.
artikel
532 Ultra-Thinning of C4 Integrated Circuits for Backside Analysis during First Silicon Debug Lundquist, T.
2001
100-101 9-10 p. 1545-1549
5 p.
artikel
533 Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28nm FDSOI technology Cai, H.
2015
100-101 9-10 p. 1323-1327
5 p.
artikel
534 Unclamped repetitive stress on 1200V normally-off SiC JFETs Abbate, C.
2012
100-101 9-10 p. 2420-2425
6 p.
artikel
535 Unique and Practical IC Timing Analysis Tool Utilizing Intrinsic Photon Emission Goldblatt, Norman
2001
100-101 9-10 p. 1507-1512
6 p.
artikel
536 Unsupervised learning for signal mapping in dynamic photon emission Chef, S.
2015
100-101 9-10 p. 1564-1568
5 p.
artikel
537 Unusual defects, generated by wafer sawing: An update, including pick&place processing Jacob, P.
2015
100-101 9-10 p. 1826-1831
6 p.
artikel
538 Upscreening of LED COTS for space science applications Kiryukhina, K.
2015
100-101 9-10 p. 1770-1774
5 p.
artikel
539 Use of a silicon drift detector for cathodoluminescence detection Béranger, M.
2015
100-101 9-10 p. 1569-1573
5 p.
artikel
540 UV LEDs reliability tests for fluoro-sensing sensor application Arques-Orobon, F.J.
2014
100-101 9-10 p. 2154-2158
5 p.
artikel
541 Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors Elßner, Michael
2014
100-101 9-10 p. 1758-1763
6 p.
artikel
542 Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices Raghavan, Nagarajan
2014
100-101 9-10 p. 2266-2271
6 p.
artikel
543 Variation tolerant on-chip degradation sensors for dynamic reliability management systems Wang, Y.
2012
100-101 9-10 p. 1787-1791
5 p.
artikel
544 Virtual prototyping in a Design-for-Reliability approach Barnat, Samed
2015
100-101 9-10 p. 1849-1854
6 p.
artikel
545 Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs Kastensmidt, F.L.
2014
100-101 9-10 p. 2344-2348
5 p.
artikel
546 Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS Rey-Tauriac, Y.
2001
100-101 9-10 p. 1331-1334
4 p.
artikel
547 Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs Fontserè, A.
2012
100-101 9-10 p. 2220-2223
4 p.
artikel
548 When adequate and predictable reliability is imperative Suhir, E.
2012
100-101 9-10 p. 2342-2346
5 p.
artikel
549 Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies Tsang, J.C.
2001
100-101 9-10 p. 1465-1470
6 p.
artikel
550 Window for better reliability of nitride heterostructure field effect transistors Matulionis, A.
2012
100-101 9-10 p. 2149-2152
4 p.
artikel
551 Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs Choi, Jin Hyung
2015
100-101 9-10 p. 1438-1441
4 p.
artikel
                             551 gevonden resultaten
 
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