Digitale Bibliotheek
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                             425 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated life test data analysis with generalised life distribution function and with no aging model assumption Maciejewski, Henryk
1995
100-101 7 p. 1047-1051
5 p.
artikel
2 Acceleration factors for THB induced degradation of AlGaAs/InGaAs pHEMT devices Marchut, Leslie
2008
100-101 7 p. 990-993
4 p.
artikel
3 A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects Chang, Yang-Hua
2012
100-101 7 p. 1328-1331
4 p.
artikel
4 A comparison between reliability analyses based primarily on disjointness or statistical independence: The case of the generalized indra network Rushdi, Ali M.
1993
100-101 7 p. 965-978
14 p.
artikel
5 A cross-layer SER analysis in the presence of PVTA variations Farahani, Bahar
2015
100-101 7 p. 1013-1027
15 p.
artikel
6 Advanced analysis on board trace reliability of WLCSP under drop impact Syed, Ahmer
2010
100-101 7 p. 928-936
9 p.
artikel
7 Advanced X-ray analysis techniques to investigate aging of micromachined silicon actuators for space application Dommann, A.
2003
100-101 7 p. 1099-1103
5 p.
artikel
8 A high-linear wide-tunable CMOS transconductor for video frequency applications Calvo, Belén
2004
100-101 7 p. 1189-1198
10 p.
artikel
9 A MAIC approach to TFT-LCD panel quality improvement Chen, K.S.
2006
100-101 7 p. 1189-1198
10 p.
artikel
10 A method for separating the effects of interface from border and oxide trapped charge densities in mos transistors Savić, Zoran
1997
100-101 7 p. 1147-1150
4 p.
artikel
11 A methodology for accelerated testing by mechanical actuation of MEMS devices McMahon, Michael
2012
100-101 7 p. 1382-1388
7 p.
artikel
12 A method to eliminate the event accumulation problem from a memory affected by multiple bit upsets Antonio Maestro, Juan
2009
100-101 7 p. 707-715
9 p.
artikel
13 A multiprocess performance analysis chart based on the incapability index C pp: an application to the chip resistors Pearn, W.L
2002
100-101 7 p. 1121-1125
5 p.
artikel
14 A multi-scale approach for investigation of interfacial delamination in electronic packages Fan, Hai Bo
2010
100-101 7 p. 893-899
7 p.
artikel
15 A multi-scale approach of the thermo-mechanical properties of silica-filled epoxies used in electronic packaging Weltevreden, E.R.
2012
100-101 7 p. 1300-1305
6 p.
artikel
16 Analysis and design of thin film resonator ladder filters Kollias, A.T
2002
100-101 7 p. 1133-1140
8 p.
artikel
17 Analysis of intermittent timing fault vulnerability Kothawade, Saurabh
2012
100-101 7 p. 1515-1522
8 p.
artikel
18 Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors Goh, Y.L
2004
100-101 7 p. 1199-1202
4 p.
artikel
19 A new creep–fatigue life model of lead-free solder joint Zhu, Yongxin
2015
100-101 7 p. 1097-1100
4 p.
artikel
20 A new experimental method to evaluate creep fatigue life of flip-chip solder joints with underfill Xie, D.J.
2000
100-101 7 p. 1191-1198
8 p.
artikel
21 A new methodology for the characterization of fracture toughness of filled epoxy films involved in microelectronics packages Shi, X.Q.
2003
100-101 7 p. 1105-1115
11 p.
artikel
22 A new prognostics method for state of health estimation of lithium-ion batteries based on a mixture of Gaussian process models and particle filter Li, Fan
2015
100-101 7 p. 1035-1045
11 p.
artikel
23 A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET’s Chiang, Te-Kuang
2009
100-101 7 p. 693-698
6 p.
artikel
24 An experimental approach to characterize rate-dependent failure envelopes and failure site transitions in surface mount assemblies Varghese, J.
2007
100-101 7 p. 1095-1102
8 p.
artikel
25 An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers Jiawei, Shi
1994
100-101 7 p. 1261-1264
4 p.
artikel
26 An inspection policy for unrevealed failures in a two-unit cold standby system subject to correlated failures and repairs Goel, L.R.
1994
100-101 7 p. 1279-1282
4 p.
artikel
27 An investigation of the information contained in faulty signatures Chan, John C.
1992
100-101 7 p. 935-940
6 p.
artikel
28 An investigation on the plasma treatment of integrated circuit bond pads Chong, Y.F
2000
100-101 7 p. 1199-1206
8 p.
artikel
29 Anomaly detection for IGBTs using Mahalanobis distance Patil, Nishad
2015
100-101 7 p. 1054-1059
6 p.
artikel
30 A note on solving a system reliability problem Wong, Jsun Y.
1993
100-101 7 p. 1045-1051
7 p.
artikel
31 A note on the statistical characteristics of a two-unit system Sridharan, V.
1994
100-101 7 p. 1269-1271
3 p.
artikel
32 A numerical procedure for simulating delamination growth on interfaces of interconnect structures Chiu, Tz-Cheng
2012
100-101 7 p. 1464-1474
11 p.
artikel
33 Approximate MLE's of the parameters of a discrete Weibull distribution with type I censored data Kulasekera, K.B.
1994
100-101 7 p. 1185-1188
4 p.
artikel
34 A queueing system with alternate batch service Sharma, S.D.
1992
100-101 7 p. 917-922
6 p.
artikel
35 Assembly-level reliability of flex-substrate BGA, elastomer-on-flex packages and 0.5 mm pitch partial array packages Lall, Pradeep
2000
100-101 7 p. 1081-1095
15 p.
artikel
36 Assembly reliability assessment and life estimation for a stacked area array device Satyanarayan Iyer,
2010
100-101 7 p. 978-985
8 p.
artikel
37 Assurance technologies, principles and practices H.R.,
1992
100-101 7 p. 1045-
1 p.
artikel
38 A study of hot-electron degradation effects in pseudomorphic HEMTs Cova, Paolo
1997
100-101 7 p. 1131-1135
5 p.
artikel
39 A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime Baishya, S.
2009
100-101 7 p. 681-688
8 p.
artikel
40 A table for the lower boundary of the region of useful redundancy for k-out-of-n systems Rushdi, Ali M.
1993
100-101 7 p. 979-992
14 p.
artikel
41 A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs Liu, Hongxia
2002
100-101 7 p. 1037-1044
8 p.
artikel
42 A two-dimensional analytical subthreshold behavior model for short-channel AlGaAs/GaAs HFETs Chiang, T.K
2004
100-101 7 p. 1093-1099
7 p.
artikel
43 Availability for a 2 3 : G subsystem and secondary subsystem subject to shut-off rules Chen, Yow-Mow
1992
100-101 7 p. 925-930
6 p.
artikel
44 A versatile failure time distribution Mukherjee, S.P.
1993
100-101 7 p. 1053-1056
4 p.
artikel
45 A wafer-level approach to device lifetesting Hamada, Dorothy June M.
2008
100-101 7 p. 985-989
5 p.
artikel
46 Balancing temperature dependence of on-wafer SOS inductors Karjalainen, Päivi H.
2006
100-101 7 p. 1071-1079
9 p.
artikel
47 Bayesian and non-Bayesian estimation for the pareto parameters using quasi-likelihood function Ashour, S.K.
1994
100-101 7 p. 1233-1237
5 p.
artikel
48 Behavioral study of passive components and coating materials under isostatic pressure and temperature stress conditions Trégon, B.
2002
100-101 7 p. 1113-1120
8 p.
artikel
49 Best linear unbiased estimation for the Weibull process Härtler, Gisela
1994
100-101 7 p. 1253-1260
8 p.
artikel
50 Board level solder joint reliability modeling and testing of TFBGA packages for telecommunication applications Tee, Tong Yan
2003
100-101 7 p. 1117-1123
7 p.
artikel
51 Body effect induced wear-out acceleration in ultra-thin oxides Bruyère, S.
2001
100-101 7 p. 1031-1034
4 p.
artikel
52 Bonding strengths at plastic encapsulant–gold-plated copper leadframe interface Yi, Sung
2000
100-101 7 p. 1207-1214
8 p.
artikel
53 B-test of goodness of fit of an empirical distribution to a supposedly theoretical one Brkić, D.M.
1993
100-101 7 p. 957-964
8 p.
artikel
54 Burn-in and thermal cyclic tests to determine the short-term reliability of a thin film resistance temperature detector Post, Julian W.
2012
100-101 7 p. 1389-1395
7 p.
artikel
55 Calendar 2009
100-101 7 p. I-II
nvt p.
artikel
56 Calendar 2008
100-101 7 p. I-III
nvt p.
artikel
57 Calendar 2010
100-101 7 p. I-III
nvt p.
artikel
58 Calendar of forthcoming events 2003
100-101 7 p. I-VII
nvt p.
artikel
59 Calendar of forthcoming events 1997
100-101 7 p. 1153-1160
8 p.
artikel
60 Calendar of international conferences, sysmposia, lectures and meetings of interest 1994
100-101 7 p. 1283-1285
3 p.
artikel
61 Carbon nanotubes and silver flakes filled epoxy resin for new hybrid conductive adhesives Marcq, F.
2011
100-101 7 p. 1230-1234
5 p.
artikel
62 Challenges for giga-scale integration Takeda, Eiji
1997
100-101 7 p. 985-1001
17 p.
artikel
63 Characterising the surface roughness of AFM grown SiO2 on Si Hill, D.
2001
100-101 7 p. 1077-1079
3 p.
artikel
64 Characterization method of thermomechanical parameters for microelectronic materials Perat, O.
2002
100-101 7 p. 1053-1058
6 p.
artikel
65 Characterization of Al-Si-Cu metal lines by means of tem analysis and the sarf technique Ciofi, C.
1997
100-101 7 p. 1079-1085
7 p.
artikel
66 Characterization of copper precipitates on aluminum copper bond pads formed after plasma clean and de-ionized water exposure Sethu, Raj Sekar
2015
100-101 7 p. 1101-1108
8 p.
artikel
67 Characterization of parasitic residual deposition on passivation layer in electroless nickel immersion gold process Md Arshad, M.K.
2007
100-101 7 p. 1120-1126
7 p.
artikel
68 Characterizing wearout, breakdown and trap generation in thin silicon oxide Dumin, David J.
1997
100-101 7 p. 1029-1038
10 p.
artikel
69 Chemical and physical limits on the performance of metal silicate high-k gate dielectrics Lucovsky, G.
2001
100-101 7 p. 937-945
9 p.
artikel
70 Chip scale package issues Ghaffarian, Reza
2000
100-101 7 p. 1157-1161
5 p.
artikel
71 Circuit and process design considerations for ESD protection in advanced CMOS processes Anderson, Warren R.
1997
100-101 7 p. 1087-1103
17 p.
artikel
72 Comparative characterization of chip to epoxy interfaces by molecular modeling and contact angle determination Hölck, O.
2012
100-101 7 p. 1285-1290
6 p.
artikel
73 Comparing the MTBF of four systems with standby components Meng, Fan C.
1995
100-101 7 p. 1031-1035
5 p.
artikel
74 Compliance analysis of multi-path fan-shaped interconnects Chen, Wei
2013
100-101 7 p. 964-974
11 p.
artikel
75 Confidence limits for steady state availability of a two unit standby system Chandrasekhar, P.
1994
100-101 7 p. 1249-1251
3 p.
artikel
76 Constructing IP cores’ transparency paths for SoC test access using greedy search Xing, Jianhui
2006
100-101 7 p. 1199-1208
10 p.
artikel
77 Copper trace fatigue models for mechanical cycling, vibration and shock/drop of high-density PWAs Farley, D.
2010
100-101 7 p. 937-947
11 p.
artikel
78 Correlation studies for component level ball impact shear test and board level drop test Wong, E.H.
2008
100-101 7 p. 1069-1078
10 p.
artikel
79 Could electronics reliability be predicted, quantified and assured? Suhir, Ephraim
2013
100-101 7 p. 925-936
12 p.
artikel
80 Coupled package-device modeling for microelectromechanical systems Bart, Stephen F
2000
100-101 7 p. 1235-1241
7 p.
artikel
81 Cu diffusion in Ag-plated Cu leadframe packages Li, Wu-Hu
2012
100-101 7 p. 1523-1527
5 p.
artikel
82 Current conduction mechanism of MIS devices using multidimensional minimization system program Rouag, N.
2015
100-101 7 p. 1028-1034
7 p.
artikel
83 Cycling copper flip chip interconnects Roesch, William J
2004
100-101 7 p. 1047-1054
8 p.
artikel
84 Decreasing variation in paste printing using statistical process control Liukkonen, Timo
2003
100-101 7 p. 1157-1161
5 p.
artikel
85 Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO2/metal structures Filip, V.
2006
100-101 7 p. 1027-1034
8 p.
artikel
86 Degradation by Sn diffusion applied to surface mounting with Ag-epoxy conductive adhesive with joining pressure Yamashita, M.
2006
100-101 7 p. 1113-1118
6 p.
artikel
87 Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting Chou, Y.C
2004
100-101 7 p. 1033-1038
6 p.
artikel
88 Degradation of moulding compounds during highly accelerated stress tests – A simple approach to study adhesion by performing button shear tests Pufall, R.
2012
100-101 7 p. 1266-1271
6 p.
artikel
89 Design, assembly and reliability of large die and fine-pitch Cu/low-k flip chip package Ong, Yue Ying
2010
100-101 7 p. 986-994
9 p.
artikel
90 Design automation to suppress cable discharge event (CDE) induced latchup in 90nm CMOS ASICs Brennan, Ciaran J.
2007
100-101 7 p. 1069-1073
5 p.
artikel
91 Design, modeling and analysis of highly reliable capacitive microaccelerometer based on circular stepped-plate and small-area touch mode Li, Kai
2012
100-101 7 p. 1373-1381
9 p.
artikel
92 Design strategy of localized halo profile for achieving sub-50 nm bulk MOSFET Shih, Chun-Hsing
2004
100-101 7 p. 1069-1075
7 p.
artikel
93 Determination of electrical and mechanical parameters in capacitive MEMS accelerometers using electrical measurements Kaliciński, Stanisław
2011
100-101 7 p. 1192-1197
6 p.
artikel
94 Developing the stress–strain curve to failure using mesoscale models parameterized from molecular models Iwamoto, Nancy
2012
100-101 7 p. 1291-1299
9 p.
artikel
95 Development and characterisation of nanowire-based FETs Zaborowski, Michał
2011
100-101 7 p. 1162-1165
4 p.
artikel
96 Development of a standard for transient measurement of junction-to-case thermal resistance Pape, Heinz
2012
100-101 7 p. 1272-1278
7 p.
artikel
97 Development of high-temperature solders: Review Zeng, Guang
2012
100-101 7 p. 1306-1322
17 p.
artikel
98 Dielectric breakdown distributions for void containing silicon substrates Falster, R.
2001
100-101 7 p. 967-971
5 p.
artikel
99 Direct tunnelling models for circuit simulation O'Sullivan, P.
2001
100-101 7 p. 951-957
7 p.
artikel
100 Drop impact reliability of edge-bonded lead-free chip scale packages Farris, Andrew
2009
100-101 7 p. 761-770
10 p.
artikel
101 Drop impact reliability of Sn–1.0Ag–0.5Cu BGA interconnects with different mounting methods Wang, Bo
2012
100-101 7 p. 1475-1482
8 p.
artikel
102 Drop impact reliability testing for lead-free and lead-based soldered IC packages Chong, Desmond Y.R.
2006
100-101 7 p. 1160-1171
12 p.
artikel
103 2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI Jagadesh Kumar, M.
2003
100-101 7 p. 1145-1149
5 p.
artikel
104 DSP based fuzzy and conventional overcurrent relay controller comparisons Goh, Yin Lee
2013
100-101 7 p. 1029-1035
7 p.
artikel
105 3D thermal model to investigate component displacement phenomenon during reflow soldering Illés, Balázs
2008
100-101 7 p. 1062-1068
7 p.
artikel
106 Dual stage modeling of moisture absorption and desorption in epoxy mold compounds Placette, Mark D.
2012
100-101 7 p. 1401-1408
8 p.
artikel
107 Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect Sharma, Rupendra Kumar
2009
100-101 7 p. 699-706
8 p.
artikel
108 Dynamic responses of PCB under product-level free drop impact Yu, Da
2010
100-101 7 p. 1028-1038
11 p.
artikel
109 Dynamic voltage and frequency scaling algorithm for fault-tolerant real-time systems Djosic, Sandra
2013
100-101 7 p. 1036-1042
7 p.
artikel
110 Editorial Stojadinović, Ninoslav
1997
100-101 7 p. 983-984
2 p.
artikel
111 Editorial Ersland, Peter
2008
100-101 7 p. 957-
1 p.
artikel
112 Effect of enhanced-mobility current path on the mobility of AOS TFT Kim, Myung Ju
2012
100-101 7 p. 1346-1349
4 p.
artikel
113 Effect of glue on reliability of flip chip BGA packages under thermal cycling Nguyen, Tung T.
2010
100-101 7 p. 1000-1006
7 p.
artikel
114 Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors Estrada, Magali
2012
100-101 7 p. 1342-1345
4 p.
artikel
115 Effect of misalignment on electrical characteristics of ACF joints for flip chip on flex applications Fan, S.H
2002
100-101 7 p. 1081-1090
10 p.
artikel
116 Effect of temperature on the capacitance–frequency and conductance–voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies Aydoğan, Ş.
2012
100-101 7 p. 1362-1366
5 p.
artikel
117 Effect of underfill filler settling on thermo-mechanical fatigue analysis of flip-chip eutectic solders Chen, Cheng-fu
2008
100-101 7 p. 1040-1051
12 p.
artikel
118 Effects of bonding force on contact pressure and frictional energy in wire bonding Ding, Yong
2006
100-101 7 p. 1101-1112
12 p.
artikel
119 Effects of device aging on microelectronics radiation response and reliability Fleetwood, D.M.
2007
100-101 7 p. 1075-1085
11 p.
artikel
120 Effects of electron and gamma-ray irradiation on CMOS analog image sensors Meng, Xiang-Ti
2003
100-101 7 p. 1151-1155
5 p.
artikel
121 Effects of single vacancy defect position on the stability of carbon nanotubes Poelma, R.H.
2012
100-101 7 p. 1279-1284
6 p.
artikel
122 Efficient error detection in Double Error Correction BCH codes for memory applications Reviriego, P.
2012
100-101 7 p. 1528-1530
3 p.
artikel
123 Efficient multi-level modeling technique for determining effective board drop reliability of PCB assembly Yang, Fan
2013
100-101 7 p. 975-984
10 p.
artikel
124 Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4–3 nm) Clerc, R.
2001
100-101 7 p. 1027-1030
4 p.
artikel
125 Electrical characterization of aluminium oxide–aluminium thin film composites by impedance spectroscopy Tadaszak, Katarzyna
2011
100-101 7 p. 1225-1229
5 p.
artikel
126 Electrical characterization of inorganic-on-organic diode based InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS) Enver Aydin, M.
2012
100-101 7 p. 1350-1354
5 p.
artikel
127 Electrical reliability aspects of through the gate implanted MOS structures with thin oxides Jank, M.P.M
2001
100-101 7 p. 987-990
4 p.
artikel
128 Electro-conductive adhesives for high density package and flip-chip interconnections Wojciechowski, Dominique
2000
100-101 7 p. 1215-1226
12 p.
artikel
129 Electromigration: A review Pierce, D.G.
1997
100-101 7 p. 1053-1072
20 p.
artikel
130 Electromigration on void formation of Sn3Ag1.5Cu FCBGA solder joints Jen, Ming-Hwa R.
2009
100-101 7 p. 734-745
12 p.
artikel
131 Electron transport in two dimensional electron gas formed at the heterojunction of Al x Ga(1− x )N/GaN at microwave frequencies Chakraborty, A.
2010
100-101 7 p. 965-970
6 p.
artikel
132 Empirical correlation between package-level ball impact test and board-level drop reliability Yeh, Chang-Lin
2007
100-101 7 p. 1127-1134
8 p.
artikel
133 Enumeration of minimal cutsets from matrix representation of directed/undirected networks Ghosh, S.K.
1993
100-101 7 p. 947-949
3 p.
artikel
134 Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide Osten, H.J.
2001
100-101 7 p. 991-994
4 p.
artikel
135 Erratum to “A simple and fundamental design rule for resisting delamination in bimaterial structures” [Microelectronics Reliability 2003;43:487–494] Moore, Thomas D.
2003
100-101 7 p. 1169-
1 p.
artikel
136 ESD tester parasitics and stress conditions and their impact on device failure levels and failure mechanisms Daniel, S.
1997
100-101 7 p. 1105-1110
6 p.
artikel
137 Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical method Whitman, Charles S.
2008
100-101 7 p. 965-973
9 p.
artikel
138 Estimation of environmental factors for the inverse Gaussian distribution Wang, Hong-Zhou
1992
100-101 7 p. 931-934
4 p.
artikel
139 2011 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems Wymysłowski, Artur
2012
100-101 7 p. 1253-1254
2 p.
artikel
140 Evaluation of board-level reliability of electronic packages under consecutive drops Yeh, Chang-Lin
2006
100-101 7 p. 1172-1182
11 p.
artikel
141 Evaluation of creep properties for Sn–Ag–Cu micro solder joint by multi-temperature stress relaxation test Kanda, Yoshihiko
2012
100-101 7 p. 1435-1440
6 p.
artikel
142 Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology Du, Xiaoyang
2008
100-101 7 p. 995-999
5 p.
artikel
143 Evaluation of sweep resistance of Q Auto-Loop and Square-Loop bonds for semiconductor packaging technology Kung, Huang-Kuang
2007
100-101 7 p. 1103-1112
10 p.
artikel
144 Evolution of microstructure and failure mechanism of lead-free solder interconnections in power cycling and thermal shock tests Laurila, T.
2007
100-101 7 p. 1135-1144
10 p.
artikel
145 Exact enumeration of minimal paths of partitioned networks Nahman, J.M.
1994
100-101 7 p. 1167-1176
10 p.
artikel
146 Experience in HBM ESD testing of high pin count devices Brodbeck, Tilo
2007
100-101 7 p. 1025-1029
5 p.
artikel
147 Experimental study and life prediction on high cycle vibration fatigue in BGA packages Liu, Xia
2006
100-101 7 p. 1128-1138
11 p.
artikel
148 Experimental study of WL-CSP reliability subjected to a four-point bend-test Le Coq, Cédric
2010
100-101 7 p. 1007-1013
7 p.
artikel
149 Fabrication and electrical characteristics of Perylene-3,4,9,10-tetracarboxylic dianhydride/p-GaAs diode structure Soylu, Murat
2012
100-101 7 p. 1355-1361
7 p.
artikel
150 Fabrication of micro-moiré gratings on a strain sensor structure for deformation analysis with micro-moiré technique Xie, Huimin
2009
100-101 7 p. 727-733
7 p.
artikel
151 Failure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS technology Chen, Shih-Hung
2006
100-101 7 p. 1042-1049
8 p.
artikel
152 Failure analysis of pad-height effects in the fine-pitch interconnection of the anisotropic conductive films Lin, Chao-Ming
2008
100-101 7 p. 1087-1092
6 p.
artikel
153 Failure and degradation mechanisms of high-power white light emitting diodes Yang, Shih-Chun
2010
100-101 7 p. 959-964
6 p.
artikel
154 Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge Meneghesso, Gaudenzio
1997
100-101 7 p. 1121-1129
9 p.
artikel
155 Failure time and rate constant of degradation: An argument for the inverse relationship Klinger, David J.
1992
100-101 7 p. 987-994
8 p.
artikel
156 Feasibility study of non-conductive film (NCF) for plasma display panel (PDP) application Hwang, Jin-Sang
2009
100-101 7 p. 806-812
7 p.
artikel
157 FeRAM technology for high density applications Mikolajick, T.
2001
100-101 7 p. 947-950
4 p.
artikel
158 Flat band voltage shift and oxide properties after rapid thermal annealing O'Sullivan, B.J.
2001
100-101 7 p. 1053-1056
4 p.
artikel
159 Forensic characterization of thin film resistor degradation Roesch, William J.
2008
100-101 7 p. 958-964
7 p.
artikel
160 Fracture analysis on die attach adhesives for stacked packages based on in-situ testing and cohesive zone model Ren, Huai-Hui
2013
100-101 7 p. 1021-1028
8 p.
artikel
161 Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors Kováč, J.
2012
100-101 7 p. 1323-1327
5 p.
artikel
162 General measures of a two-unit system Sarma Yadavalli, V.S.
1994
100-101 7 p. 1189-1192
4 p.
artikel
163 G/G y /m queueing system with discouragement via diffusion approximation Garg, K.M.
1993
100-101 7 p. 1057-1059
3 p.
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164 Guest editorial Stadler, Wolfgang
2007
100-101 7 p. 999-
1 p.
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165 Guest Editorial: 2009 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems Wymysłowski, Artur
2010
100-101 7 p. 891-892
2 p.
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166 Guidelines to select underfills for flip chip on board assemblies and compliant interposers for chip scale package assemblies Okura, J.H
2000
100-101 7 p. 1173-1180
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167 Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies Streibl, M.
2003
100-101 7 p. 1001-1010
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168 Hierarchical test generation for combinational circuits with real defects coverage Cibáková, T
2002
100-101 7 p. 1141-1149
9 p.
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169 High field stress at and above room temperature in 2.3 nm thick oxides Zander, D.
2001
100-101 7 p. 1023-1026
4 p.
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170 High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices Vassilev, V.
2003
100-101 7 p. 1011-1020
10 p.
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171 High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation Mergens, Markus P.J.
2003
100-101 7 p. 993-1000
8 p.
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172 High-resolution transmission electron microscopy on aged InP HBTs Paine, Bruce M
2004
100-101 7 p. 1055-1060
6 p.
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173 High temperature CoSb3–Cu junctions Wojciechowski, Krzysztof Tomasz
2011
100-101 7 p. 1198-1202
5 p.
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174 Hot-carrier degradation mechanisms in silicon-On-Insulator MOSFETS Cristoloveanu, Sorin
1997
100-101 7 p. 1003-1013
11 p.
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175 Hot-carrier stress effects on the amplitude of Random Telegraph Signals in small area Si p-MOSFETS Simoen, E.
1997
100-101 7 p. 1015-1019
5 p.
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176 Hot hole-induced device degradation by drain junction reverse current Kim, K.S.
2013
100-101 7 p. 947-951
5 p.
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177 ILP method for memory mapping in high-level synthesis Zhou, Haifeng
2003
100-101 7 p. 1163-1167
5 p.
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178 Impact life prediction modeling of TFBGA packages under board level drop test Tee, Tong Yan
2004
100-101 7 p. 1131-1142
12 p.
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179 Impact of bias condition on 1/f noise of dual-gate depletion type MOSFET in linear region and consequences for noise diagnostic application and modelling Videnovic-Misic, M.
2008
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180 Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs Yang, L
2004
100-101 7 p. 1101-1107
7 p.
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181 Impact of substituting SiO2 ILD by low k materials into AlCu RIE metallization Weber, D
2001
100-101 7 p. 1081-1083
3 p.
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182 Impact of the As dose in 0.35 μ m EEPROM technology: characterization and modeling Galbiati, N.
2001
100-101 7 p. 999-1002
4 p.
artikel
183 Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90nm CMOS ASICs Brennan, Ciaran J.
2007
100-101 7 p. 1030-1035
6 p.
artikel
184 Improved electrical characteristics and reliability of amorphous InGaZnO metal–insulator–semiconductor capacitor with high κ HfO x N y gate dielectric Zou, Xiao
2010
100-101 7 p. 954-958
5 p.
artikel
185 Improved reliability of copper-cored solder joints under a harsh thermal cycling condition Kim, Yunsung
2012
100-101 7 p. 1441-1444
4 p.
artikel
186 Improvement of immunity on MeV electron radiation of MOS structures by means of ultra-shallow fluorine implantation Kalisz, Małgorzata
2011
100-101 7 p. 1183-1186
4 p.
artikel
187 Improving cooling effectiveness by use of chamfers on the top of electronic components Saleha, Nemdili
2015
100-101 7 p. 1067-1076
10 p.
artikel
188 Improving FPGA repair under real-time constraints Nazar, Gabriel L.
2015
100-101 7 p. 1109-1119
11 p.
artikel
189 Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction Ortiz-Conde, Adelmo
2009
100-101 7 p. 689-692
4 p.
artikel
190 Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films Rodrı́guez, R.
2001
100-101 7 p. 1011-1013
3 p.
artikel
191 Influence of copper diffusion on the shape of whiskers grown on bright tin layers Horváth, Barbara
2013
100-101 7 p. 1009-1020
12 p.
artikel
192 Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories Xu, Yue
2015
100-101 7 p. 1126-1129
4 p.
artikel
193 Influence of lamination parameters on mechanical properties of low temperature co-fired ceramic tapes Weilguni, Michael
2011
100-101 7 p. 1253-1256
4 p.
artikel
194 In memory of Pierre Rossel Charitat, Georges
2001
100-101 7 p. 933-934
2 p.
artikel
195 In process stress analysis of flip-chip assemblies during underfill cure Palaniappan, P
2000
100-101 7 p. 1181-1190
10 p.
artikel
196 Inside front cover - Editorial board 2009
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1 p.
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197 Inside front cover - Editorial board 2015
100-101 7 p. IFC-
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198 Inside front cover - Editorial board 2011
100-101 7 p. IFC-
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199 Inside front cover - Editorial board 2013
100-101 7 p. IFC-
1 p.
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200 Inside front cover - Editorial board 2012
100-101 7 p. IFC-
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201 Inside front cover - Editorial board 2008
100-101 7 p. IFC-
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202 Inside front cover - Editorial board 2010
100-101 7 p. IFC-
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203 In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction Zhao, C.
2001
100-101 7 p. 995-998
4 p.
artikel
204 Integrated SMD pressure/flow/temperature multisensor for compressed air in LTCC technology: Thermal flow and temperature sensing Maeder, Thomas
2011
100-101 7 p. 1245-1249
5 p.
artikel
205 Integration of an SCR in an active clamp Reynders, K.
2007
100-101 7 p. 1054-1059
6 p.
artikel
206 Interface delamination analysis of TQFP package during solder reflow Guojun, Hu
2010
100-101 7 p. 1014-1020
7 p.
artikel
207 Interfacial microstructure and shear strength of Ag nano particle doped Sn–9Zn solder in ball grid array packages Gain, Asit Kumar
2009
100-101 7 p. 746-753
8 p.
artikel
208 Interfacial reliability between hot-melt polyamides resin and textile for wearable electronics application Chung, Soon-Wan
2012
100-101 7 p. 1501-1510
10 p.
artikel
209 Interfacial thermal stresses in ACF bonding assembly Gao, LiLan
2015
100-101 7 p. 1089-1096
8 p.
artikel
210 Intrinsic reliability of a 12V field plate pHEMT Gaw, Craig
2008
100-101 7 p. 974-984
11 p.
artikel
211 Intrinsic stress fracture energy measurements for PECVD thin films in the SiO x C y N z:H system King, S.W.
2009
100-101 7 p. 721-726
6 p.
artikel
212 Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well Majkusiak, B.
2011
100-101 7 p. 1172-1177
6 p.
artikel
213 Investigation of high-performance sub-50nm junctionless nanowire transistors Yan, Ran
2011
100-101 7 p. 1166-1171
6 p.
artikel
214 Investigation of mechanical shock testing of lead-free SAC solder joints in fine pitch BGA package Chin, Y.T.
2008
100-101 7 p. 1079-1086
8 p.
artikel
215 Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells Xu, Yue
2012
100-101 7 p. 1337-1341
5 p.
artikel
216 Investigation of the optimum oscillation frequency value towards increasing the efficiency of OBIST approach Arbet, D.
2015
100-101 7 p. 1120-1125
6 p.
artikel
217 Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model Igic, P.M.
2002
100-101 7 p. 1045-1052
8 p.
artikel
218 Investigation of the short-time high-current behavior of vias manufactured in hybrid thick-film technology Ortolino, Dominique
2011
100-101 7 p. 1257-1263
7 p.
artikel
219 Ionization coefficient of monolayer graphene nanoribbon Ghadiry, Mahdiar
2012
100-101 7 p. 1396-1400
5 p.
artikel
220 Lifetime acceleration model for HAST tests of a pHEMT process Ersland, Peter
2004
100-101 7 p. 1039-1045
7 p.
artikel
221 Lifetime predictions of LED-based light bars by accelerated degradation test Wang, Fu-Kwun
2012
100-101 7 p. 1332-1336
5 p.
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222 List of reviewers 1997
100-101 7 p. 1151-1152
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223 Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope Porti, M
2001
100-101 7 p. 1041-1044
4 p.
artikel
224 Long-term reliability of Ti–Pt–Au metallization system for Schottky contact and first-level metallization on SiC MESFET Sozza, A
2004
100-101 7 p. 1109-1113
5 p.
artikel
225 Low cost flex substrates for miniaturized electronic assemblies Barlow, F.
2002
100-101 7 p. 1091-1099
9 p.
artikel
226 Low frequency noise as a tool to study optocouplers with phototransistors Jevtić, Milan M
2004
100-101 7 p. 1123-1129
7 p.
artikel
227 Low frequency noise characterization in 0.13 μm p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 μm technologies on 1/f noise Marin, M.
2004
100-101 7 p. 1077-1085
9 p.
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228 LTCC package for high temperature applications Nowak, Damian
2011
100-101 7 p. 1241-1244
4 p.
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229 Major factors to the solder joint strength of ENIG layer in FC BGA package Lee, Dong-Jun
2006
100-101 7 p. 1119-1127
9 p.
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230 Markovian-model for systems with independent units El-Damcese, M.A.
1995
100-101 7 p. 1059-1061
3 p.
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231 Material properties of anisotropic conductive films (ACFs) and their flip chip assembly reliability in NAND flash memory applications Jang, Kyung-Woon
2008
100-101 7 p. 1052-1061
10 p.
artikel
232 Measurement and analysis of contact resistance in wafer probe testing Liu, D.S.
2007
100-101 7 p. 1086-1094
9 p.
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233 Measuring stress next to Au ball bond during high temperature aging Mayer, M.
2009
100-101 7 p. 771-781
11 p.
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234 Mechanical cycling fatigue of PBGA package interconnects Leicht, Larry
2000
100-101 7 p. 1129-1133
5 p.
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235 Memory architecture exploration for programmable embedded systems; Peter Grun, Nikil Dutt, Alexandru Nicolau. Kluwer Academic Publishers, Boston. 2003. Hardcover, pp. 128, plus XVII, 116 euro. ISBN 1-4020-7324-0. Stojcev, Mile
2004
100-101 7 p. 1205-1206
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236 MEMS reliability De Wolf, Ingrid
2003
100-101 7 p. 1047-1048
2 p.
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237 MEMS reliability from a failure mechanisms perspective Merlijn van Spengen, W
2003
100-101 7 p. 1049-1060
12 p.
artikel
238 Method for rapid testing of thermo-mechanical characteristics of solder joints Nowottnick, M
2000
100-101 7 p. 1135-1146
12 p.
artikel
239 Methods of reducing defects in GaAs ICs Roesch, William J
2002
100-101 7 p. 1029-1036
8 p.
artikel
240 Microanalysis and electromigration reliability performance of high current transmission line pulse (TLP) stressed copper interconnects Suat Cheng Khoo, Sherry
2003
100-101 7 p. 1039-1045
7 p.
artikel
241 Micro Ceramic Cell Analyzer (MCCA) – Preliminary results Malecha, Karol
2011
100-101 7 p. 1250-1252
3 p.
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242 Microelectronic materials and structures characterization by impedance spectroscopy Nitsch, Karol
2011
100-101 7 p. 1213-1218
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243 Microelectronics manufacturing diagnostics handbook G.W.A.D.,
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artikel
244 Microstructure evolution of the Sn–Ag–y%Cu interconnect Lu, Henry Y.
2006
100-101 7 p. 1058-1070
13 p.
artikel
245 MISFET structures with barium titanate as a dielectric layer for application in memory cells Firek, Piotr
2011
100-101 7 p. 1187-1191
5 p.
artikel
246 Model accuracy and goodness of fit for the Weibull distribution with suspended items Ang, Jeff Y.T.
1994
100-101 7 p. 1177-1184
8 p.
artikel
247 Modeling and simulation of resistivity of nanometer scale copper Yarimbiyik, A. Emre
2006
100-101 7 p. 1050-1057
8 p.
artikel
248 Modeling gallium arsenide heterojunction bipolar transistor ledge variations for insight into device reliability Henderson, Tim
2002
100-101 7 p. 1011-1020
10 p.
artikel
249 Modeling of a non-Newtonian flow between parallel plates in a flip chip encapsulation Young, Wen-Bin
2010
100-101 7 p. 995-999
5 p.
artikel
250 Modeling of board-level package by Finite Element Analysis and laser interferometer measurements Zhang, Bo
2010
100-101 7 p. 1021-1027
7 p.
artikel
251 Modeling of ESR in metallized film capacitors and its implication on pulse handling capability Li, Hua
2015
100-101 7 p. 1046-1053
8 p.
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252 Modeling study of the experimental techniques for the characterization of mosfet hot-carrier aging Habaš, Predrag
1995
100-101 7 p. 1073-1104
32 p.
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253 Molecular dynamics approach to structure–property correlation in epoxy resins for thermo-mechanical lifetime modeling Wunderle, B.
2010
100-101 7 p. 900-909
10 p.
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254 Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI–MOSFETs Kumar, A.
2001
100-101 7 p. 1049-1051
3 p.
artikel
255 Multi-functional systolic array with reconfigurable micro-power processing elements Milovanović, E.I.
2009
100-101 7 p. 813-820
8 p.
artikel
256 Multiple quantum well PIN optoelectronic devices and a method of restoring failed device characteristics Ikossi, K
2002
100-101 7 p. 1021-1028
8 p.
artikel
257 Near-CSP plastic ball grid array Owens, Norman L
2000
100-101 7 p. 1109-1116
8 p.
artikel
258 Networks on Chip; Axel Jantsch, Hannu Tenhunen (Eds.). Kluwer Academic Publishers, Boston; 2003. Hardcover, pp. 303, plus VIII, euro 117. ISBN 1-4020-7392-5 Stojcev, Mile
2004
100-101 7 p. 1203-1204
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259 New application of laser beam to failure analysis of LSI with multi-metal layers Sanada, Masaru
1993
100-101 7 p. 993-1009
17 p.
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260 New conductive thick-film paste based on silver nanopowder for high power and high temperature applications Jakubowska, Małgorzata
2011
100-101 7 p. 1235-1240
6 p.
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261 New considerations for MOSFET power clamps Poon, Steven S.
2003
100-101 7 p. 987-991
5 p.
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262 New method for assessing dielectrjc integrity of MOS oxides Patrikar, R.M.
1992
100-101 7 p. 961-986
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263 Nitrogen implantations for rapid thermal oxinitride layers Stadler, A.
2001
100-101 7 p. 977-980
4 p.
artikel
264 Noise and reliability in simulated thin metal films Pascoli, Stefano Di
2008
100-101 7 p. 1015-1020
6 p.
artikel
265 Noise properties of thick-film resistors in extended temperature range Stadler, Adam Witold
2011
100-101 7 p. 1264-1270
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266 Note on integrity versus reliability Badenius, Duncan
1993
100-101 7 p. 1041-1044
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267 [No title] Amin, Ahmed
2009
100-101 7 p. 821-822
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268 [No title] Anderson, Wallace T
2002
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269 [No title] Danto, Yves
2000
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270 [No title] Martin, Andreas
2001
100-101 7 p. 935-
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271 [No title] Stojcev, Mile
2008
100-101 7 p. 1106-1107
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272 [No title] Stojcev, Mile
2008
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273 [No title] Stojcev, Mile
2007
100-101 7 p. 1153-1154
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274 [No title] Stojcev, Mile
2006
100-101 7 p. 1214-1215
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275 [No title] Ersland, Peter
2004
100-101 7 p. 1031-
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276 Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology Cui, Qiang
2013
100-101 7 p. 952-955
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277 Numerical investigation of liquid cooling cold plate for power control unit in fuel cell vehicle Wang, Ting
2015
100-101 7 p. 1077-1088
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278 Numerical prototyping methods in microsystem accelerometers design Dowhań, Łukasz
2011
100-101 7 p. 1276-1282
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279 Numerical study on thermal impacts of different void patterns on performance of chip-scale packaged power device Otiaba, Kenny C.
2012
100-101 7 p. 1409-1419
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280 On-chip electrostatic discharge ESD Gieser, Horst A.
2003
100-101 7 p. 985-986
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281 On the influence of the variation of measurement conditions on the FNT characteristics of stressed thin silicon oxides Zahlmann-Nowitzki, J.-W
2001
100-101 7 p. 1067-1069
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282 On the use of simulation metamodeling in solving systems availability problems Madu, C.N.
1994
100-101 7 p. 1147-1160
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283 Optical and electrical characterization of the electron beam gun evaporated TiO2 film Mikhelashvili, V
2001
100-101 7 p. 1057-1061
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284 Optimal control of a removable server in an M/Ek/1 queueing system with finite capacity Wang, Kuo-Hsiung
1995
100-101 7 p. 1023-1030
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285 Optimal ordering policies and optimal number of minimal repairs before replacement Sheu, Shey-Huei
1992
100-101 7 p. 995-1002
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286 Optimisation of silver paste for flexography printing on LTCC substrate Faddoul, Rita
2012
100-101 7 p. 1483-1491
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287 Optimization of high voltage LDMOSFETs with complex multiple-resistivity drift region and field plate Chang, Yang-Hua
2010
100-101 7 p. 949-953
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288 Optimization of the bistability property for flexible display by an integrated approach using Taguchi methods, neural networks and genetic algorithms Su, Chao-Ton
2012
100-101 7 p. 1492-1500
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289 Optimization of WSi2 by SiH4 CVD: impact on oxide quality Brazzelli, D.
2001
100-101 7 p. 1003-1006
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290 Optimizing income of repairable reliability systems Dhillon, B.S.
1994
100-101 7 p. 1227-1232
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291 Optimizing the controller IC for micro HDD process based on Taguchi methods Hung, Y.H.
2006
100-101 7 p. 1183-1188
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292 Optimum planned policies with minimal repair and random lead times Sridharan, V.
1992
100-101 7 p. 905-909
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293 Optoelectronic material analysis and device failure analysis using SEM cathodoluminescence Pey, K.L.
1994
100-101 7 p. 1193-1202
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294 Overcurrent relay on a FPGA chip Manzoul, Mahmoud A.
1995
100-101 7 p. 1017-1022
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295 Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation Lanchava, B.
2001
100-101 7 p. 1097-1100
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296 Performance-related reliability measures for a repairable two-unit gracefully degrading system Agarwal, Manju
1993
100-101 7 p. 921-927
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297 Physical limitation on drain voltage of power PM HEMT Vashchenko, V.A.
1997
100-101 7 p. 1137-1141
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298 Plasma charging damage mechanisms and impact on new technologies Reimbold, G.
2001
100-101 7 p. 959-965
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299 Prediction of cure induced warpage of micro-electronic products de Vreugd, J.
2010
100-101 7 p. 910-916
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300 Prediction of pad cratering fracture at the copper pad – Printed circuit board interface Nadimpalli, Siva P.V.
2012
100-101 7 p. 1454-1463
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301 Prediction of the epoxy moulding compound aging effect on package reliability Noijen, Sander
2010
100-101 7 p. 917-922
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302 Pressure-induced tin whisker formation Shibutani, Tadahiro
2008
100-101 7 p. 1033-1039
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303 Process influence on product CDM ESD performance Lisenker, Boris
2003
100-101 7 p. 1029-1037
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304 Processing and recognition of the thermal images using wavelet transforms Kosikowski, Mateusz
2011
100-101 7 p. 1271-1275
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artikel
305 Profound knowledge application of a major deming principle Anjard, Ronald P.
1995
100-101 7 p. 1053-1057
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306 Properties of low temperature Sn–Ag–Bi–In solder systems Kim, Keun-Soo
2007
100-101 7 p. 1113-1119
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307 Prototyping of a reliable 3D flexible IC cube package by laser micromachining Berényi, Richárd
2009
100-101 7 p. 800-805
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308 Pseudopotential study of PrO2 and HfO2 in fluorite phase Da̧browski, J.
2001
100-101 7 p. 1093-1096
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309 Publications, notices, calls for papers, etc. 1995
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310 Publications, notices, calls for papers, etc. 1992
100-101 7 p. 1049-1050
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311 Publications, notices, calls for papers, etc. 1994
100-101 7 p. 1287-1290
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312 Quality assessment of thin oxides using constant and ramped stress measurements Diestel, Gunnar
2001
100-101 7 p. 1019-1022
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313 Quality through engineering design G.W.A.D.,
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100-101 7 p. 1065-1066
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314 Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer Jalabert, L.
2001
100-101 7 p. 981-985
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315 Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures Aichinger, Thomas
2013
100-101 7 p. 937-946
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316 Reliability analysis of a three-state multi-component warm standby redundant complex system with waiting for repair Gupta, P.P.
1993
100-101 7 p. 1061-1063
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317 Reliability analysis of a two-unit cold standby system with inspection, replacement, proviso of rest, two types of repair and preparation time Mahmoud, M.A.W.
1995
100-101 7 p. 1063-1072
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318 Reliability analysis of temperature step-stress tests on III–V high concentrator solar cells González, José Ramón
2009
100-101 7 p. 673-680
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319 Reliability aspects of microsensors and micromechatronic actuators for automotive applications Müller-Fiedler, Roland
2003
100-101 7 p. 1085-1097
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320 Reliability assessment of CCDs operating under ionizing radiation ambients: Failure — Simulation studies via electrical overstressing Agbo, Samuel O.
1992
100-101 7 p. 1029-1042
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321 Reliability by design CAE techniques for electronic components and systems G.W.A.D.,
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322 Reliability enhancement of electronic packages by design of optimal parameters Batra, Ashish
2004
100-101 7 p. 1157-1163
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323 Reliability estimation of BGA and CSP assemblies using degradation law model and technological parameters deviations Delétage, J.-Y.
2003
100-101 7 p. 1137-1144
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324 Reliability evaluation for single event crosstalk via probabilistic transfer matrix Liu, Baojun
2012
100-101 7 p. 1511-1514
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325 Reliability evaluation of adhesive bonded SMT components in industrial applications Périchaud, M.G.
2000
100-101 7 p. 1227-1234
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326 Reliability modeling of engineered barrier systems for nuclear waste: A conditional approach Ananda, Malwane M.A.
1994
100-101 7 p. 1221-1225
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327 Reliability modeling of flexible manufacturing systems Yuanidis, Petro
1994
100-101 7 p. 1203-1220
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328 Reliability modeling on a MOSFET power package based on embedded die technology Yang, Daoguo
2010
100-101 7 p. 923-927
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329 Reliability of a cascade system with normal stress and exponential strength Uma Maheswari, T.S.
1993
100-101 7 p. 929-936
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330 Reliability of a stretchable interconnect utilizing terminated, in-plane meandered copper conductor Jablonski, M.
2013
100-101 7 p. 956-963
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331 Reliability of Hamming code transmission versus error probability on message bits Kaur, D.
1994
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332 Reliability of high temperature superconductor metal contacts Agarwal, Ajay
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333 Reliability of metamorphic HEMTs on GaAs substrates Marsh, P.F
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334 Reliability of new packaging concepts Sinnadurai, Nihal
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335 Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient Beichele, M.
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336 Reliability study of the electroless Ni–P layer against solder alloy Alam, M.O
2002
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337 Reversible dielectric breakdown of thin gate oxides in MOS devices Suñé, J.
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338 Revitalization of primary reliability knowledge Dohnal, M.
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339 RF ESD protection strategies: Codesign vs. low-C protection Soldner, W.
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340 Rohit Kapur, CTL for Test Information of Digital ICs Hardcover. Kluwer Academic Publisher, Boston, 2003. pp. 173, plus XI, 164 Euro ISBN 1-4020-7293-7 Stojcev, Mile
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341 Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP–Si/p-GaAs–C heterojunction bipolar transistor (HBT) devices Madra, Satbir S
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100-101 7 p. 1061-1068
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342 Role of impact ultrasound on bond strength and Al pad splash in Cu wire bonding Rezvani, A.
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100-101 7 p. 1002-1008
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343 SCR-based ESD protection in nanometer SOI technologies Marichal, Olivier
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344 SCR operation mode of diode strings for ESD protection Glaser, Ulrich
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345 Selecting an appropriate ESD protection for discrete RF power LDMOSTs Smedes, T.
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346 Sensitivity analysis of simplified Printed Circuit Board finite element models Amy, Robin Alastair
2009
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347 Shape effect on electromigration in VLSI interconnects Gonzalez, J.L.
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348 Simulation of fatigue distributions for ball grid arrays by the Monte Carlo method Evans, John W
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100-101 7 p. 1147-1155
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349 Simulation of transient thermal states in layered electronic microstructures Kalita, Włodzimierz
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100-101 7 p. 1021-1026
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350 Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation Joshi, Sopan
2003
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351 Slow state characterization by measurements of current-voltage characteristics of MOS capacitors Dimitrijev, Sima
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352 Small-signal gate-to-drain capacitance of MOSFET as a diagnostic tool for hot-carrier induced degradation Ghodsi, R.
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100-101 7 p. 1021-1028
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353 Society of reliability engineers bulletin Reiche, Hans
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354 Sojourn times in Markov processes for power transmission dependability assessment with MatLab Csenki, Attila
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100-101 7 p. 945-960
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355 Solder joint fatigue life of fine pitch BGAs – impact of design and material choices Darveaux, Robert
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100-101 7 p. 1117-1127
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356 Some observations on a software reliability model Scott, Anthony
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357 Spice-aided modelling of the UC3842 current mode PWM controller with selfheating taken into account Zarębski, Janusz
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358 Spin-on-glass material curing and etching Osredkar, Radko
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100-101 7 p. 1265-1267
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359 Stability of the warpage in a PBGA package subjected to hygro-thermal loading Chien, Chi-Hui
2006
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360 Stabilized emission from micro-field emitter for electron microscopy Chen, L.
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361 Stacked CMOS circuits integrated in laser-recrystallized silicon films Hilleringmann, U.
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362 Staggered heat sinks with aerodynamic cooling fins Leon, Octavio A
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363 Standard and self-sustained magnetron sputtering deposited Cu films investigated by means of AFM and XRD Wiatrowski, A.
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100-101 7 p. 1203-1206
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364 Steady state and transient analysis of SFIIL Kal, Santiram
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365 2-Step algorithm for automatic alignment in wafer dicing process Kim, Hyong Tae
2004
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366 Stochastic analysis of a general standby system with constant human error and arbitrary system repair rates Yang, Nianfu
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100-101 7 p. 1037-1045
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367 Stochastic analysis of a two-unit redundant system with two types of failure Agnihotri, R.K.
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100-101 7 p. 901-904
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368 Stochastic analysis of a warm standby system with repair in the presence of chance of multiple critical errors Who Kee Chung,
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100-101 7 p. 1161-1165
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369 Strength violation effect on soft-error detection in sub-micron technology Javaheri, R.
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370 Structures for ESD protection in CMOS processes Fried, Rafael
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100-101 7 p. 1111-1120
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371 Studies of the quality of GdSiO–Si interface Iwanowicz, Marcin
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100-101 7 p. 1178-1182
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372 Studies on the reliability of power packages based on strength and fracture criteria Dudek, Rainer
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373 Study of electrical and optical properties of CN x thin films deposited by reactive magnetron sputtering Prociów, E.L.
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100-101 7 p. 1207-1212
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374 Study of swing potential on deep submicron on-chip interconnect Ma, Qungang
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100-101 7 p. 1087-1091
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375 Study of the optimal layout of cooling fins in forced convection cooling Leon, Octavio
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100-101 7 p. 1101-1111
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376 Study of unipolar pulsed ramp and combined ramped/constant voltage stress on mos gate oxides Martin, A.
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100-101 7 p. 1045-1051
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377 Sub-100 nm CMOS circuit performance with high-K gate dielectrics Mohapatra, N.R.
2001
100-101 7 p. 1045-1048
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378 Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices Strobel, S
2001
100-101 7 p. 1085-1088
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379 Surface and interface characterization of oxygen plasma activated anodic bonding of glass–ceramics to stainless steel Xiong, Dehua
2012
100-101 7 p. 1367-1372
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380 Temperature dependence of electrical parameters of SMD ferrite components for EMI suppression Stojanović, Goran
2008
100-101 7 p. 1027-1032
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381 Temperature influence on energy losses in MOSFET capacitors Gołda, A
2004
100-101 7 p. 1115-1121
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382 Test generation at the algorithm-level for gate-level fault coverage Bareisa, Eduardas
2008
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383 Testing method for measuring corrosion resistance of surface mount chip resistors Reid, Michael
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384 Test structure assembly for bump bond yield measurement on high density flip chip technologies Ullán, M.
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385 The advent of MEMS in space Lafontan, X.
2003
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386 The analysis of the states of buffer in a CIMS production line Min, Tan
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387 The characterization of electrically conductive silver ink patterns on flexible substrates Merilampi, S.
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388 The Computer Engineering Handbook; Vojin Oklobdzija. CRC Press, Boca Raton, 2002. Hardcover, pp. 1338, plus XXII & 1-23 ISBN 0-8493-0885-2 Stojcev, Mile
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389 The effect of hygro-mechanical and thermo-mechanical stress on delamination of gold bump Kim, Dae Whan
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390 The effect of sputtered interface metallic layers on reinforced core laminate making build-up structures Jalonen, Paavo
2002
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391 The effects of buffer thickness on GaAs MESFET characteristics: channel–substrate current, drain breakdown, and reliability Gao, Frank
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392 The electron irradiation effects on silicon gate dioxide used for power MOS devices Badila, M.
2001
100-101 7 p. 1015-1018
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393 The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers Thangadurai, P.
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394 The influence of inhomogeneous trap distribution on results of DLTS study Kaczmarczyk, Mariusz
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395 The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices Innertsberger, G
2001
100-101 7 p. 973-975
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396 10th Electron Technology ELTE 2010 and 34th International Microelectronics and Packaging IMAPS/CPMT Poland Joint Conference – Guest Editorial Dziedzic, Andrzej
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397 The Mukherjee-Islam failure model Siddiqui, S.A.
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398 The paradox of monotony of systems by fuzzy probability Utkin, Lev V.
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399 The performance and fracture mechanism of solder joints under mechanical reliability test Jang, Wei-Luen
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400 The post-damage behavior of a MOS tunnel emitter transistor Tyaginov, S.E.
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401 The reliability of component boards studied with different shock impact repetition frequencies Hokka, Jussi
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402 The reliability of laser diodes and laser transmitter modules Sim, S.P.
1993
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403 Thermally induced deformation of solder joints in real packages: Measurement and analysis Lu, Hua
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404 Thermal simulation of joints with high thermal conductivities for power electronic devices Ishizaki, T.
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405 Thermodynamic study on the corrosion mechanism of copper wire bonding Zeng, Yingzhi
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406 Thermo-mechanical finite element analysis in press-packed IGBT design Pirondi, A
2000
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407 The truncated service time Erlangian overflow queues with balking Abou-El-Ata, M.O.
1993
100-101 7 p. 941-945
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408 Thin oxide mos damage generated after treatment in a merie reactor Atanassova, E.
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409 Three-dimensional FEM simulations of thermomechanical stresses in 1.55 μm Laser modules Deshayes, Y.
2003
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410 Threshold energies in the light emission characteristics of silicon MOS tunnel diodes Asli, N.
2001
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411 Tin whisker formation of lead-free plated leadframes Kim, K.S.
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412 Total ionizing dose effects in shallow trench isolation oxides Faccio, Federico
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413 Transient thermal analysis of multilayered structures using Green's functions Janicki, Marcin
2002
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414 Transient voltage overshoot in TLP testing – Real or artifact? Trémouilles, D.
2007
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415 Two models for two-dissimilar-unit standby redundant system with three types of repair facilities and perfect or imperfect switch Mokaddis, G.S.
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416 Ultra-thick gate oxides: charge generation and its impact on reliability Schwalke, Udo
2001
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417 Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams Borsoni, G.
2001
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418 Using statistical design of experiment to investigate the effect of firing parameters on the electrical and magnetic properties of Mn–Zn ferrite Arshak, K.I
2002
100-101 7 p. 1127-1132
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419 Verification of CDM circuit simulation using an ESD evaluation circuit Etherton, M.
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420 Vibration fatigue experiments of SMT solder joint Wang, Hongfang
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421 Vibration reliability characterization of PBGA assemblies Yang, Q.J
2000
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422 Vibration reliability test and finite element analysis for flip chip solder joints Che, F.X.
2009
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423 Wear-out, breakdown occurrence and failure detection in 18–25 Å ultrathin oxides Monsieur, F.
2001
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424 Wide frequency range ac electrical characterization of thick-film microvaristors Dudek, M.W.
2011
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425 Yield challenges in wafer stacking technology Kim, Eun-Kyung
2008
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artikel
                             425 gevonden resultaten
 
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