Digitale Bibliotheek
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                             127 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A compact model for NBTI degradation and recovery under use-profile variations and its application to aging analysis of digital integrated circuits Kleeberger, Veit B.
2014
100-101 6-7 p. 1083-1089
7 p.
artikel
2 Advanced failure detection techniques in deep submicron CMOS integrated circuits Rubio, Antonio
1999
100-101 6-7 p. 909-918
10 p.
artikel
3 Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors Rahala, A.
1999
100-101 6-7 p. 851-855
5 p.
artikel
4 A graph based approach for reliability analysis of nano-scale VLSI logic circuits Vaghef, Vahid Hamiyati
2014
100-101 6-7 p. 1299-1306
8 p.
artikel
5 Analysis of Harmonic distortion in asymmetric underlap DG-MOSFET with high-k spacer Dutta, Arka
2014
100-101 6-7 p. 1125-1132
8 p.
artikel
6 Analytical compact modeling and statistical variability study of LDMOS Zhou, Hongtao
2014
100-101 6-7 p. 1096-1102
7 p.
artikel
7 Analytical solution on interfacial reliability of 3-D through-silicon-via (TSV) containing dielectric liner Ding, Yingtao
2014
100-101 6-7 p. 1384-1391
8 p.
artikel
8 An area-efficient LDMOS-SCR ESD protection device for the I/O of power IC application Zeng, Jie
2014
100-101 6-7 p. 1173-1178
6 p.
artikel
9 A new AFM-based tool for testing dielectric quality and reliability on a nanometer scale Olbrich, Alexander
1999
100-101 6-7 p. 941-946
6 p.
artikel
10 A new bifunctional topography and current probe for scanning force microscope testing of integrated circuits Bae, S.
1999
100-101 6-7 p. 975-980
6 p.
artikel
11 An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits Liang, Hailian
2014
100-101 6-7 p. 1169-1172
4 p.
artikel
12 A polymer based miniature loop heat pipe with silicon substrate and temperature sensors for high brightness light-emitting diodes Ye, Huaiyu
2014
100-101 6-7 p. 1355-1362
8 p.
artikel
13 A review: On the development of low melting temperature Pb-free solders Kotadia, Hiren R.
2014
100-101 6-7 p. 1253-1273
21 p.
artikel
14 A simpler method for life-testing laser diodes Vanzi, M.
1999
100-101 6-7 p. 1067-1071
5 p.
artikel
15 Assessment of worst case dielectric failure rate based on statistical samples with pure intrinsic failure distributions Kerber, Martin
1999
100-101 6-7 p. 755-758
4 p.
artikel
16 A stochastic approach to failure analysis in electromigration phenomena Pennetta, C.
1999
100-101 6-7 p. 857-862
6 p.
artikel
17 A universal reliability prediction model for SMD integrated circuits based on field failures Kervarrec, G.
1999
100-101 6-7 p. 765-771
7 p.
artikel
18 Author index 1999
100-101 6-7 p. I-II
nvt p.
artikel
19 Case studies of defect localization based on software-based fault diagnosis in comparison with PEMS/OBIRCH analysis Naoe, Takuya
2014
100-101 6-7 p. 1433-1442
10 p.
artikel
20 Cathodoluminescence from hot electron stressed InP HEMTs Cova, Paolo
1999
100-101 6-7 p. 1073-1078
6 p.
artikel
21 Chip-Package Interaction in 3D stacked IC packages using Finite Element Modelling Vandevelde, Bart
2014
100-101 6-7 p. 1200-1205
6 p.
artikel
22 Computational modeling of creep-based fatigue as a means of selecting lead-free solder alloys Eckermann, J.
2014
100-101 6-7 p. 1235-1242
8 p.
artikel
23 Contact resistance anomalies of vias before breakdown in accelerated current life tests Gölz, W.L.F.
1999
100-101 6-7 p. 1109-1112
4 p.
artikel
24 Cross-section analysis of electric devices by scanning capacitance microscope Takasaki, Yoichi
1999
100-101 6-7 p. 987-990
4 p.
artikel
25 Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices Pogany, D.
1999
100-101 6-7 p. 1143-1148
6 p.
artikel
26 Defect localization using voltage contrast IDDQ testing Perdu, Philippe
1999
100-101 6-7 p. 1021-1026
6 p.
artikel
27 Degradation of AlGaAs GaAs power HFET's under on-state and off-state breakdown conditions Dieci, D.
1999
100-101 6-7 p. 1055-1060
6 p.
artikel
28 Depassivation of latent plasma damage in pMOS devices Pantisano, L.
1999
100-101 6-7 p. 827-832
6 p.
artikel
29 Design-in-reliability: From library modeling and optimization to gate-level verification Jain, Palkesh
2014
100-101 6-7 p. 1421-1432
12 p.
artikel
30 Device characteristics of AlGaN/GaN MIS–HEMTs with high-k Hf x Zr1 − x O2 (x =0.66,0.47,0.15) insulator layer Chiu, Hsien-Chin
2014
100-101 6-7 p. 1282-1287
6 p.
artikel
31 Device reliability and robust power converter development Keskar, N.
1999
100-101 6-7 p. 1121-1130
10 p.
artikel
32 2D physical simulation of degradation on transistors induced by FIB exposure of dielectric passivation Benbrik, J.
1999
100-101 6-7 p. 1027-1031
5 p.
artikel
33 Editorial Labat, Nathalie
1999
100-101 6-7 p. ix-x
nvt p.
artikel
34 Effects of RF life-test on LF electrical parameters of GaAs power MESFETs Saysset-Malbert, N.
1999
100-101 6-7 p. 1061-1066
6 p.
artikel
35 Electron Beam Testing of FPGA Circuits Desplats, R.
1999
100-101 6-7 p. 963-968
6 p.
artikel
36 Enhancing IC repairs by combining laser direct-writing of Cu and FIB techniques Remes, J.
1999
100-101 6-7 p. 997-1001
5 p.
artikel
37 ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements Meneghini, Matteo
2014
100-101 6-7 p. 1143-1149
7 p.
artikel
38 Evaluation of P-HEMT MMIC technology PH25 for space applications Huguet, P.
1999
100-101 6-7 p. 1049-1054
6 p.
artikel
39 Extended SPICE-like model accounting for layout effects on snapback phenomenon during ESD events Salome, P.
1999
100-101 6-7 p. 833-838
6 p.
artikel
40 Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation Croci, S.
1999
100-101 6-7 p. 879-884
6 p.
artikel
41 Fabrication and application of temperature triggered MEMS switch for active cooling control in Solid State Lighting system Ye, Huaiyu
2014
100-101 6-7 p. 1338-1343
6 p.
artikel
42 Failure analysis method by using different wavelengths lasers and its application Ito, Seigo
1999
100-101 6-7 p. 1015-1020
6 p.
artikel
43 Fault localisation in ICs by goniometric laser probing of thermal induced surface waves Dilhaire, S.
1999
100-101 6-7 p. 919-923
5 p.
artikel
44 FIB voltage contrast measurement for enhanced circuit repairs Desplats, Romain
1999
100-101 6-7 p. 1003-1008
6 p.
artikel
45 Flexible stop and double-cascaded stop to improve shock reliability of MEMS accelerometer Tao, Yong-Kang
2014
100-101 6-7 p. 1328-1337
10 p.
artikel
46 FLIP-chip and “backside” techniques Barton, D.L.
1999
100-101 6-7 p. 721-730
10 p.
artikel
47 1 f Noise in conductive adhesive bonds under mechanical stress as a sensitive and fast diagnostic tool for reliability assessment Vandamme, L.K.J.
1999
100-101 6-7 p. 1089-1094
6 p.
artikel
48 Front- and backside investigations of thermal and electronic properties of semiconducting devices Fiege, G.B.M.
1999
100-101 6-7 p. 937-940
4 p.
artikel
49 Geometry optimization of a Lorentz force, resonating MEMS magnetometer Bagherinia, M.
2014
100-101 6-7 p. 1192-1199
8 p.
artikel
50 Gold removal in failure analysis of GaAs-based laser diodes Vanzi, M.
1999
100-101 6-7 p. 1043-1047
5 p.
artikel
51 Guest Editorial: 2013 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems Wymysłowski, Artur
2014
100-101 6-7 p. 1179-1181
3 p.
artikel
52 HBM and TLP ESD robustness in smart-power protection structures Santirosia, S.
1999
100-101 6-7 p. 839-844
6 p.
artikel
53 Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETs Rafí, J.M.
1999
100-101 6-7 p. 869-874
6 p.
artikel
54 Impact of FEM simulation on reliability improvement of packaging Weide, Kirsten
1999
100-101 6-7 p. 1079-1088
10 p.
artikel
55 Improved device variability in scaled MOSFETs with deeply retrograde channel profile Woo, Jason
2014
100-101 6-7 p. 1090-1095
6 p.
artikel
56 Improved SRAM failure diagnosis for process monitoring via current signature analysis Schienle, M.
1999
100-101 6-7 p. 1009-1014
6 p.
artikel
57 Improving the reliability of electronic paper display using FMEA and Taguchi methods: A case study Su, Chao-Ton
2014
100-101 6-7 p. 1369-1377
9 p.
artikel
58 Influence of bias humidity testing and application on time-dependent, Arrhenius-law-based stability predictions for thin film resistors Kuehl, Reiner W.
2014
100-101 6-7 p. 1316-1327
12 p.
artikel
59 Influence of pulsed DC current stress on electromigration results in AlCu interconnections; analysis of thermal and healing effects Arnaud, L.
1999
100-101 6-7 p. 773-784
12 p.
artikel
60 Inside front cover - Editorial board 2014
100-101 6-7 p. IFC-
1 p.
artikel
61 Junction parameters for silicon devices characterization de la Bardonnie, M.
1999
100-101 6-7 p. 751-753
3 p.
artikel
62 Laser beam backside probing of CMOS integrated circuits Kasapi, Steven
1999
100-101 6-7 p. 957-961
5 p.
artikel
63 Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress Fürböck, C.
1999
100-101 6-7 p. 925-930
6 p.
artikel
64 Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs) Farmakis, F.V.
1999
100-101 6-7 p. 885-889
5 p.
artikel
65 Lifetime extrapolation for IGBT modules under realistic operation conditions Ciappa, M.
1999
100-101 6-7 p. 1131-1136
6 p.
artikel
66 Localization of defects in die-attach assembly by continuous wavelet transform using scanning acoustic microscopy Bechou, L.
1999
100-101 6-7 p. 1095-1101
7 p.
artikel
67 Long term reliability testing of HV-IGBT modules in worst case traction operation Fratelli, L.
1999
100-101 6-7 p. 1137-1142
6 p.
artikel
68 Mechanical and corrosion resistances of a Sn–0.7wt.%Cu lead-free solder alloy Freitas, Emmanuelle S.
2014
100-101 6-7 p. 1392-1400
9 p.
artikel
69 Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-up Cacciato, A.
1999
100-101 6-7 p. 903-907
5 p.
artikel
70 Methodology of reliability enhancement for high power LED driver Lan, Song
2014
100-101 6-7 p. 1150-1159
10 p.
artikel
71 Model for the oxide thickness dependence of SILC generation based on anode hole injection process Jahan, C.
1999
100-101 6-7 p. 791-795
5 p.
artikel
72 Model-independent determination of the degradation dynamics of thin SiO2 films Rodríguez, R.
1999
100-101 6-7 p. 891-895
5 p.
artikel
73 Modeling and analysis of gate-all-around silicon nanowire FET Chen, Xiangchen
2014
100-101 6-7 p. 1103-1108
6 p.
artikel
74 Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique Dreesen, R.
1999
100-101 6-7 p. 785-790
6 p.
artikel
75 Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism iess, P.
1999
100-101 6-7 p. 803-807
5 p.
artikel
76 Monitoring of aging in integrated circuits by identifying possible critical paths Lorenz, Dominik
2014
100-101 6-7 p. 1075-1082
8 p.
artikel
77 Multi-physics reliability simulation for solid state lighting drivers Tarashioon, S.
2014
100-101 6-7 p. 1212-1222
11 p.
artikel
78 Multi-physics simulations for combined temperature/humidity loading of potted electronic assemblies Parsa, Ehsan
2014
100-101 6-7 p. 1182-1191
10 p.
artikel
79 New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery Ivo, Ponky
2014
100-101 6-7 p. 1288-1292
5 p.
artikel
80 New latchup mechanism in complementary bipolar power ICs triggered by backside die attach Glue van der Pol, J.A.
1999
100-101 6-7 p. 863-868
6 p.
artikel
81 New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology Gagnard, X.
1999
100-101 6-7 p. 759-763
5 p.
artikel
82 New tools for yield improvement in integrated circuit manufacturing: can they be applied to reliability? McDonald, Chris J
1999
100-101 6-7 p. 731-739
9 p.
artikel
83 On the crack and delamination risk optimization of a Si-interposer for LED packaging Auersperg, J.
2014
100-101 6-7 p. 1223-1227
5 p.
artikel
84 On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric Feng, Xuan
2014
100-101 6-7 p. 1133-1136
4 p.
artikel
85 Optical method for the measurement of the thermomechanical behaviour of electronic devices Dilhaire, S.
1999
100-101 6-7 p. 981-985
5 p.
artikel
86 Oxygen vacancy formation and the induced defect states in HfO2 and Hf-silicates – A first principles hybrid functional study Chen, Tsung-Ju
2014
100-101 6-7 p. 1119-1124
6 p.
artikel
87 Physical limits and lifetime limitations of semiconductor devices at high temperatures Wondrak, W.
1999
100-101 6-7 p. 1113-1120
8 p.
artikel
88 Physics of degradation in GaAs-based heterojunction bipolar transistors Henderson, T.
1999
100-101 6-7 p. 1033-1042
10 p.
artikel
89 Planar copper-tin inter-metallic film formation on strained substrates Hsu, Feng-Chih
2014
100-101 6-7 p. 1378-1383
6 p.
artikel
90 Power cycling on press-pack IGBTs: measurements and thermomechanical simulation Cova, Paolo
1999
100-101 6-7 p. 1165-1170
6 p.
artikel
91 Predicting bond failure after 1.5ms of bonding, an initial study Tietäväinen, Aino
2014
100-101 6-7 p. 1452-1454
3 p.
artikel
92 Prediction of processing maps for transient liquid phase diffusion bonding of Cu/Sn/Cu joints in microelectronics packaging Park, M.S.
2014
100-101 6-7 p. 1401-1411
11 p.
artikel
93 Quality and mechanical reliability assessment of wafer-bonded micromechanical components Petzold, M.
1999
100-101 6-7 p. 1103-1108
6 p.
artikel
94 Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHz Wittpahl, V.
1999
100-101 6-7 p. 951-956
6 p.
artikel
95 Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules Hamidi, A.
1999
100-101 6-7 p. 1153-1158
6 p.
artikel
96 Reliability assessment of a MEMS microphone under mixed flowing gas environment and shock impact loading Li, Jue
2014
100-101 6-7 p. 1228-1234
7 p.
artikel
97 Reliability improvement of EEPROM by using WSi2 polycide gate Ogier-Monnier, K.
1999
100-101 6-7 p. 897-901
5 p.
artikel
98 Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress Chen, Wei-Wei
2014
100-101 6-7 p. 1293-1298
6 p.
artikel
99 Reliability of AlN substrates and their solder joints in IGBT power modules Mitic, G.
1999
100-101 6-7 p. 1159-1164
6 p.
artikel
100 Reliability versus yield and die location in advanced VLSI Riordan, W.C.
1999
100-101 6-7 p. 741-749
9 p.
artikel
101 Resilience Articulation Point (RAP): Cross-layer dependability modeling for nanometer system-on-chip resilience Herkersdorf, Andreas
2014
100-101 6-7 p. 1066-1074
9 p.
artikel
102 Robustness measurement of integrated circuits and its adaptation to aging effects Barke, Martin
2014
100-101 6-7 p. 1058-1065
8 p.
artikel
103 Self-repairing adder using fault localization Akbar, Muhammad Ali
2014
100-101 6-7 p. 1443-1451
9 p.
artikel
104 Simulation and measurement of the flip chip solder bumps with a Cu-plated plastic core Weide-Zaage, K.
2014
100-101 6-7 p. 1206-1211
6 p.
artikel
105 Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology Tam, Wing-Shan
2014
100-101 6-7 p. 1163-1168
6 p.
artikel
106 Soft error estimation and mitigation of digital circuits by characterizing input patterns of logic gates Rezaei, Siavash
2014
100-101 6-7 p. 1412-1420
9 p.
artikel
107 Special section reliability and variability of devices for circuits and systems Asenov, Asen
2014
100-101 6-7 p. 1057-
1 p.
artikel
108 Stacked zener trigger SCR for HV IC ESD protection Dong, Shurong
2014
100-101 6-7 p. 1160-1162
3 p.
artikel
109 Stress impact of moisture diffusion measured with the stress chip Schindler-Saefkow, F.
2014
100-101 6-7 p. 1243-1252
10 p.
artikel
110 Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs Pati, Sudhansu Kumar
2014
100-101 6-7 p. 1137-1142
6 p.
artikel
111 Study of stress induced leakage current by using high resolution measurements De Salvo, B.
1999
100-101 6-7 p. 797-802
6 p.
artikel
112 Sub-surface analyses of defects in integrated devices by scanning probe acoustic microscopy Cramer, R.M.
1999
100-101 6-7 p. 947-950
4 p.
artikel
113 Subthreshold behavior models for short-channel junctionless tri-material cylindrical surrounding-gate MOSFET Li, Cong
2014
100-101 6-7 p. 1274-1281
8 p.
artikel
114 Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides Bruyère, S.
1999
100-101 6-7 p. 815-820
6 p.
artikel
115 Temperature dependence of hot carrier induced MOSFET degradation at low gate bias Hong, Sung H.
1999
100-101 6-7 p. 809-814
6 p.
artikel
116 Temperature dependences of threshold voltage and drain-induced barrier lowering in 60nm gate length MOS transistors Chen, Zehua
2014
100-101 6-7 p. 1109-1114
6 p.
artikel
117 Thermal characterization of power devices by scanning thermal microscopy techniques Fiege, G.B.M.
1999
100-101 6-7 p. 1149-1152
4 p.
artikel
118 Thermal stability of sectorial split-drain magnetic field-effect transistors Tam, Wing-Shan
2014
100-101 6-7 p. 1115-1118
4 p.
artikel
119 Thermal stresses in a multilayered thin film thermoelectric structure Jin, Z.-H.
2014
100-101 6-7 p. 1363-1368
6 p.
artikel
120 TIVA and SEI developments for enhanced front and backside interconnection failure analysis Cole Jr., E.I.
1999
100-101 6-7 p. 991-996
6 p.
artikel
121 Transient induced latch-up triggered by very fast pulses Bonfert, D.
1999
100-101 6-7 p. 875-878
4 p.
artikel
122 Trapping mechanisms in negative bias temperature stressed p-MOSFETs Schlünder, Christian
1999
100-101 6-7 p. 821-826
6 p.
artikel
123 U- and L-shaped heat pipes heat sinks for cooling electronic components employed a least square smoothing method Wang, Jung-Chang
2014
100-101 6-7 p. 1344-1354
11 p.
artikel
124 Useful lifetime analysis for high-power white LEDs Wang, Fu-Kwun
2014
100-101 6-7 p. 1307-1315
9 p.
artikel
125 Validation of radiation hardened designs by pulsed laser testing and SPICE analysis Pouget, V.
1999
100-101 6-7 p. 931-935
5 p.
artikel
126 Voltage contrast measurements on sub-micrometer structures with an electric force microscope based test system Behnke, U.
1999
100-101 6-7 p. 969-974
6 p.
artikel
127 Wafer mapping of ESD performance Reiner, Joachim C.
1999
100-101 6-7 p. 845-850
6 p.
artikel
                             127 gevonden resultaten
 
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