Digitale Bibliotheek
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                             463 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A Bayesian reliability assessment of complex systems for binomial sampling 1975
100-101 5-6 p. 408-
1 p.
artikel
2 Acceleration factors for plastic encapsulated semiconductor devices and their relationship to field performance 1975
100-101 5-6 p. 405-
1 p.
artikel
3 A CdSe thin-film field effect transistor 1979
100-101 5-6 p. 427-
1 p.
artikel
4 A closer look at hybrid microcircuit screening 1979
100-101 5-6 p. 429-
1 p.
artikel
5 A comparative reliability evaluation of CMOS. A maturing technology 1975
100-101 5-6 p. 406-
1 p.
artikel
6 A comprehensive model for oxide degradation Irrera, Fernanda
2005
100-101 5-6 p. 853-856
4 p.
artikel
7 A confidence interval for the Barlow-Scheuer reliability growth model 1979
100-101 5-6 p. 413-
1 p.
artikel
8 A correlation interface circuit for microprocessor systems 1979
100-101 5-6 p. 423-
1 p.
artikel
9 Acoustic imaging for nondestructive evaluation 1979
100-101 5-6 p. 422-
1 p.
artikel
10 A decomposition method for computing system reliability by a matrix expression 1979
100-101 5-6 p. 414-
1 p.
artikel
11 A design review approach toward dynamic RAM reliability 1979
100-101 5-6 p. 411-
1 p.
artikel
12 Adhesion mechanisms of thick film conductors 1979
100-101 5-6 p. 427-
1 p.
artikel
13 Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2 Truong, L.
2005
100-101 5-6 p. 823-826
4 p.
artikel
14 Advances in double sided wafer processing 1979
100-101 5-6 p. 418-
1 p.
artikel
15 Advances in planar plasma etching equipment 1979
100-101 5-6 p. 420-
1 p.
artikel
16 A general procedure for designing tests for LSI digital circuits 1979
100-101 5-6 p. 419-
1 p.
artikel
17 A laser projector for edge-rounding contour measurement on polished wafers 1979
100-101 5-6 p. 430-
1 p.
artikel
18 A low cost reliability test specification 1979
100-101 5-6 p. 413-
1 p.
artikel
19 A metallization system for microwave and UHF power transistors 1975
100-101 5-6 p. 410-
1 p.
artikel
20 A method for determining the statistically weighted percent fault detection coverage of a self-test program 1979
100-101 5-6 p. 415-
1 p.
artikel
21 A method for dynamic analysis of integrated MOS inverters with non-linear resistive loads 1979
100-101 5-6 p. 424-
1 p.
artikel
22 A microelectronic test pattern for measuring uniformity of an integrated circuit fabrication technology 1979
100-101 5-6 p. 418-
1 p.
artikel
23 A minicomputer-controlled read-only-memory programmer 1979
100-101 5-6 p. 421-
1 p.
artikel
24 A modified reliability expression for the electromigration time-to-failure Bobbio, A.
1975
100-101 5-6 p. 431-433
3 p.
artikel
25 Amorphous silicon shows promise for flat-panel TV display 1979
100-101 5-6 p. 417-
1 p.
artikel
26 A multi-microcomputer interface Wood, A.R.
1979
100-101 5-6 p. 513-522
10 p.
artikel
27 An academic profile. Education in reliability engineering 1975
100-101 5-6 p. 403-
1 p.
artikel
28 Analog ICs divide accurately to conquer computation problems 1979
100-101 5-6 p. 428-
1 p.
artikel
29 Analogue sampling ICs in data acquisition systems Bowers, Derek F.
1979
100-101 5-6 p. 497-511
15 p.
artikel
30 Analysis of deposited glass layer defects 1975
100-101 5-6 p. 404-
1 p.
artikel
31 Analysis of semiconductor surfaces by spark source mass spectrometry 1975
100-101 5-6 p. 412-
1 p.
artikel
32 Analysis of thin oxide films on silicon by back-scattering techniques 1979
100-101 5-6 p. 431-
1 p.
artikel
33 An evaluation of design-sensitive maintainability-prediction technique 1975
100-101 5-6 p. 408-
1 p.
artikel
34 A new analytical expression for the T.C.R. of thin monocrystalline metal films 1979
100-101 5-6 p. 428-
1 p.
artikel
35 A new breed of linear ICs runs at 1-volt levels 1979
100-101 5-6 p. 421-
1 p.
artikel
36 A new technique for component mounting and interconnection: double face circuitry on polyimide film 1979
100-101 5-6 p. 419-
1 p.
artikel
37 A new ultra low power ULA and its application Forshaw, P.
1979
100-101 5-6 p. 463-472
10 p.
artikel
38 An improved algorithm for network reliability 1979
100-101 5-6 p. 416-
1 p.
artikel
39 An improved algorithm for reliability optimization 1979
100-101 5-6 p. 411-
1 p.
artikel
40 Anisotropic plasma etching of semiconductor materials 1979
100-101 5-6 p. 420-
1 p.
artikel
41 An optical pattern generator for large area devices and direct wafer stepping 1979
100-101 5-6 p. 419-
1 p.
artikel
42 A note on heuristic methods in optimal system reliability 1979
100-101 5-6 p. 414-
1 p.
artikel
43 A note on the implementation of three-valued unary operators with C-MOS integrated circuits 1979
100-101 5-6 p. 421-
1 p.
artikel
44 A novel double dielectric two phase CCD with overlapping gates 1979
100-101 5-6 p. 421-
1 p.
artikel
45 Application of discrete Fourier transform to decision-making in reliability 1979
100-101 5-6 p. 413-
1 p.
artikel
46 Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon 1979
100-101 5-6 p. 423-424
2 p.
artikel
47 Applications for silicon tetrafluoride in plasma etching 1979
100-101 5-6 p. 420-
1 p.
artikel
48 Applications of thin film and thick film technologies to high microwave frequencies 1979
100-101 5-6 p. 429-
1 p.
artikel
49 A profile of activities in reliability studies at the University of Windsor 1975
100-101 5-6 p. 403-
1 p.
artikel
50 A quantitative method of reliability estimation for surface mount solder joints based on heating factor Q η Tao, Bo
2006
100-101 5-6 p. 864-872
9 p.
artikel
51 A reliability-driven placement procedure based on thermal-force model Lee, Jing
2006
100-101 5-6 p. 973-983
11 p.
artikel
52 A reliability growth model 1979
100-101 5-6 p. 411-412
2 p.
artikel
53 A report on a survey of the specification and attainment of reliability in communications equipment 1975
100-101 5-6 p. 408-
1 p.
artikel
54 A review of microprocessor software Rundle, A.R.
1979
100-101 5-6 p. 541-548
8 p.
artikel
55 Assembly technologies for hybrid integrated circuits and their mechanization 1979
100-101 5-6 p. 429-
1 p.
artikel
56 A three-state system Markov model Proctor, C.L.
1975
100-101 5-6 p. 463-464
2 p.
artikel
57 A universal MOS-LSI testing system 1975
100-101 5-6 p. 411-
1 p.
artikel
58 Automated circuit testers lead the way out of continuity maze 1975
100-101 5-6 p. 411-
1 p.
artikel
59 Automated inspection system for various defects in screenprinted patterns 1979
100-101 5-6 p. 430-
1 p.
artikel
60 Availability: A low-density deployment case study 1979
100-101 5-6 p. 416-
1 p.
artikel
61 Availability of a parallel redundant complex system 1979
100-101 5-6 p. 413-
1 p.
artikel
62 Availability of k-out-of-m:G repairable system with nonidentical elements 1979
100-101 5-6 p. 413-
1 p.
artikel
63 AVD® technology for deposition of next generation devices Weber, U.
2005
100-101 5-6 p. 945-948
4 p.
artikel
64 Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers 1979
100-101 5-6 p. 424-
1 p.
artikel
65 16 bit microprocessor for the hard environment Fox, R.E.
1979
100-101 5-6 p. 599-610
12 p.
artikel
66 Bond strain and defects at interfaces in high-k gate stacks Lucovsky, G.
2005
100-101 5-6 p. 770-778
9 p.
artikel
67 Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced—CAFM Blasco, X.
2005
100-101 5-6 p. 811-814
4 p.
artikel
68 Bubble memories demand unique test methods 1979
100-101 5-6 p. 421-
1 p.
artikel
69 Calendar of international conferences, symposia, lectures and meetings of interest 1975
100-101 5-6 p. 399-
1 p.
artikel
70 Carrier transport across heterojunction interfaces 1979
100-101 5-6 p. 423-
1 p.
artikel
71 Causes of wavesoldering defects 1979
100-101 5-6 p. 411-
1 p.
artikel
72 CFCET: A hardware-based control flow checking technique in COTS processors using execution tracing Rajabzadeh, Amir
2006
100-101 5-6 p. 959-972
14 p.
artikel
73 Challenges for dielectric materials in future integrated circuit technologies Garner, C.M.
2005
100-101 5-6 p. 919-924
6 p.
artikel
74 Channel current limitations in GaAs MESFETS 1979
100-101 5-6 p. 426-
1 p.
artikel
75 Characterisation of the Al2O3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H–SiC devices Wolborski, Maciej
2006
100-101 5-6 p. 743-755
13 p.
artikel
76 Characteristics of current crowding in flip-chip solder bumps Lai, Yi-Shao
2006
100-101 5-6 p. 915-922
8 p.
artikel
77 Characteristics of enhancement/depletion (E/D) gate MOSFET fabricated using ion implantation 1975
100-101 5-6 p. 414-
1 p.
artikel
78 Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100) Sibai, A.
2005
100-101 5-6 p. 941-944
4 p.
artikel
79 Characterization of thick film compositions on porcelain steel substrates 1979
100-101 5-6 p. 430-
1 p.
artikel
80 Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200°C Vasilopoulou, M.
2005
100-101 5-6 p. 990-993
4 p.
artikel
81 Charge storage peculiarities in poly-Si–SiO2–Si memory devices with Si nanocrystals rich SiO2 Turchanikov, V.I.
2005
100-101 5-6 p. 903-906
4 p.
artikel
82 Charge-transfer filtering 1979
100-101 5-6 p. 424-
1 p.
artikel
83 Chip handles I/O channel 1979
100-101 5-6 p. 421-
1 p.
artikel
84 Circuit-analysis program can model many digital ICs automatically 1975
100-101 5-6 p. 410-
1 p.
artikel
85 Circuits employing small-size field effect transistors 1975
100-101 5-6 p. 410-
1 p.
artikel
86 C-MOS codec solves phone line problems with bipolar interface 1979
100-101 5-6 p. 421-
1 p.
artikel
87 Codec has on-chip signaling for phone applications 1979
100-101 5-6 p. 422-
1 p.
artikel
88 Codecs for P.C.M. processing Jenkins, Mike
1979
100-101 5-6 p. 479-496
18 p.
artikel
89 Combined ferrite-dielectric substrates for integrated circuits in microwave technique 1975
100-101 5-6 p. 410-
1 p.
artikel
90 Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N Guhel, Y.
2006
100-101 5-6 p. 786-793
8 p.
artikel
91 Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides Zander, D.
2005
100-101 5-6 p. 891-894
4 p.
artikel
92 Comparison of metal gate electrodes on MOCVD HfO2 Lemme, M.C.
2005
100-101 5-6 p. 953-956
4 p.
artikel
93 Component replacement and the use of Relcode 1979
100-101 5-6 p. 412-
1 p.
artikel
94 Components of microcomputer systems Lister, P.F.
1979
100-101 5-6 p. 433-440
8 p.
artikel
95 Computational time and absolute error comparison for reliability expression derived by various methods Aggarwal, K.K.
1975
100-101 5-6 p. 465-467
3 p.
artikel
96 Computation-based reliability analysis in real time applications 1979
100-101 5-6 p. 412-
1 p.
artikel
97 “Condensation” of impurities in semiconductors (Si+Li) 1975
100-101 5-6 p. 412-
1 p.
artikel
98 Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Lucovsky, G.
2005
100-101 5-6 p. 827-830
4 p.
artikel
99 Consider 1024-bit C-MOS RAMs for small static-memory systems 1975
100-101 5-6 p. 411-
1 p.
artikel
100 Cost of ownership—an overview. Life cycle costs: evaluation of avionic system reliability improvements 1975
100-101 5-6 p. 408-
1 p.
artikel
101 CP-140 aircraft reliability program—A “tailored” management approach 1979
100-101 5-6 p. 415-
1 p.
artikel
102 Crested barrier in the tunnel stack of non-volatile memories Irrera, Fernanda
2005
100-101 5-6 p. 907-910
4 p.
artikel
103 Critical dimension control in photolithography based on the yield by a simulation program Kang, H.Y.
2006
100-101 5-6 p. 1006-1012
7 p.
artikel
104 Current/voltage characteristics of transistors operating in current-mode second breakdown 1979
100-101 5-6 p. 410-
1 p.
artikel
105 Decision theoretic approach to the design of reliability systems 1975
100-101 5-6 p. 407-
1 p.
artikel
106 Degradation mechanisms in rewritable n-channel FAMOS devices 1975
100-101 5-6 p. 405-
1 p.
artikel
107 Degradation of electrical contacts caused by oscillatory micromotion between the contact members 1979
100-101 5-6 p. 410-
1 p.
artikel
108 Design for quality: A designer's notebook for electronic systems 1975
100-101 5-6 p. 407-
1 p.
artikel
109 Designing low power 12 bit microprocessor systems Watson, David
1979
100-101 5-6 p. 575-578
4 p.
artikel
110 Design of reliability acceptance sampling plans based upon prior distribution 1979
100-101 5-6 p. 415-
1 p.
artikel
111 Determination of complete carrier density and drift mobility profiles in thin semiconductor layers 1979
100-101 5-6 p. 424-
1 p.
artikel
112 Determination of useful life of two-layer metallization systems via accelerated stressing 1975
100-101 5-6 p. 410-
1 p.
artikel
113 Determinations of MTTF from the transition probability matrix and diagram 1979
100-101 5-6 p. 412-413
2 p.
artikel
114 Developing the sampling plans 1979
100-101 5-6 p. 411-
1 p.
artikel
115 Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging Pan, M.Y.
2006
100-101 5-6 p. 763-767
5 p.
artikel
116 Developments in CMOS memory Watson, David
1979
100-101 5-6 p. 449-452
4 p.
artikel
117 Developpement d'un modele theorique d'evolution de surfaces soumises au bombardement ionique pour applications a la gravure Cantagrel, M
1975
100-101 5-6 p. 419-424
6 p.
artikel
118 Dielectric properties of two phases of crystalline lutetium oxide Delugas, Pietro
2005
100-101 5-6 p. 831-833
3 p.
artikel
119 Digital signal processing and LSI in modems for data transmission 1979
100-101 5-6 p. 421-
1 p.
artikel
120 Discrete probability models with modified zeros 1979
100-101 5-6 p. 415-
1 p.
artikel
121 Dissociation of GaAs and Ga0.7Al0.3As during alloying of gold contact films 1979
100-101 5-6 p. 425-
1 p.
artikel
122 Distributed collaborative design of IP components in the TRMS environment Siekierska, K.
2006
100-101 5-6 p. 1019-1024
6 p.
artikel
123 Disturbance caused in telecommunications cables by thyristor fitted locomotives 1979
100-101 5-6 p. 409-410
2 p.
artikel
124 Does DSA stand for better MOS? 1979
100-101 5-6 p. 420-
1 p.
artikel
125 Dosing the phosphorus in silicon and doped oxides by X-fluorescence 1975
100-101 5-6 p. 412-
1 p.
artikel
126 Double-step annealing and ambient effects on phosphorus implanted emitters in silicon 1979
100-101 5-6 p. 430-
1 p.
artikel
127 Dynamic environment factors in determining electronic assembly reliability 1975
100-101 5-6 p. 408-
1 p.
artikel
128 Dynamic Fowler–Nordheim injection in EEPROM tunnel oxides at realistic time scales Baboux, N.
2005
100-101 5-6 p. 911-914
4 p.
artikel
129 E-beam exposure for semiconductor device lithography 1979
100-101 5-6 p. 419-420
2 p.
artikel
130 Educational needs for reliability and maintainability 1975
100-101 5-6 p. 403-
1 p.
artikel
131 Effect of restricted repair on system reliability indices 1979
100-101 5-6 p. 414-415
2 p.
artikel
132 Effect of silicon film thickness on threshold voltage of SOS-MOSFETs 1979
100-101 5-6 p. 424-
1 p.
artikel
133 Effect of substrate generation current on oxide I–V measurement on p-type MOS structures 1979
100-101 5-6 p. 424-
1 p.
artikel
134 Effect of substrate resistance on MOS distributed RC notch network Bozic, S.M.
1975
100-101 5-6 p. 435-437
3 p.
artikel
135 Effect of wafer thinning methods towards fracture strength and topography of silicon die Jiun, Hoh Huey
2006
100-101 5-6 p. 836-845
10 p.
artikel
136 Effects of band non-parabolicity on electron drift velocity in silicon above room temperature 1975
100-101 5-6 p. 412-413
2 p.
artikel
137 Effects of different bonding parameters on the electrical performance and peeling strengths of ACF interconnection Chen, Xu
2006
100-101 5-6 p. 774-785
12 p.
artikel
138 Effects of fast temperature cycling on alumium and gold metal systems 1975
100-101 5-6 p. 405-
1 p.
artikel
139 Effects of nitrogen annealing on electron scatterings in Si-SiO2 interface 1979
100-101 5-6 p. 425-
1 p.
artikel
140 Effects of trichloroethane oxidation of silicon wafers on SiO2 and Si properties 1979
100-101 5-6 p. 427-
1 p.
artikel
141 Eigenvalue approach for computing the reliability of Markov systems 1979
100-101 5-6 p. 412-
1 p.
artikel
142 Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition Dueñas, S.
2005
100-101 5-6 p. 949-952
4 p.
artikel
143 Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD Decams, J.M.
2005
100-101 5-6 p. 929-932
4 p.
artikel
144 Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films Wang, Ming-Tsong
2005
100-101 5-6 p. 969-972
4 p.
artikel
145 Electrical conduction of silicon nitride films 1979
100-101 5-6 p. 426-
1 p.
artikel
146 Electrically erasable memory behaves like a fast nonvolatile RAM 1979
100-101 5-6 p. 421-
1 p.
artikel
147 Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors Deloffre, E.
2005
100-101 5-6 p. 925-928
4 p.
artikel
148 Electrical properties of epitaxial aluminium films 1979
100-101 5-6 p. 427-428
2 p.
artikel
149 Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor Lemberger, Martin
2005
100-101 5-6 p. 819-822
4 p.
artikel
150 Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric Chiu, Fu-Chien
2005
100-101 5-6 p. 961-964
4 p.
artikel
151 Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics Mikhelashvili, V.
2005
100-101 5-6 p. 933-936
4 p.
artikel
152 Electrical properties of RF sputtering systems 1979
100-101 5-6 p. 428-
1 p.
artikel
153 Electrode effects in electrical measurements in SiO thin films 1979
100-101 5-6 p. 426-
1 p.
artikel
154 Electromigration failure in Au thin-film conductors 1975
100-101 5-6 p. 404-405
2 p.
artikel
155 Electron-beam trimming of thin and thick film resistor networks 1975
100-101 5-6 p. 415-
1 p.
artikel
156 Electron mobility in Si-MOSFETs with an additional implanted channel 1979
100-101 5-6 p. 430-
1 p.
artikel
157 Empirical Bayes estimators of reliability for lognormal failure model 1979
100-101 5-6 p. 412-
1 p.
artikel
158 Empirical reliability models of complex structures 1975
100-101 5-6 p. 407-
1 p.
artikel
159 Empirical studies of software validation 1979
100-101 5-6 p. 413-
1 p.
artikel
160 Engineering and technological problems of the hybrid integration 1979
100-101 5-6 p. 429-
1 p.
artikel
161 Engineering risk reduction in satellite programs 1979
100-101 5-6 p. 416-
1 p.
artikel
162 Enhanced solubility and ion pairing of Cu and Au in heavily doped silicon at high temperatures 1975
100-101 5-6 p. 412-
1 p.
artikel
163 Enhancing MOS/LSI's role in analog design 1979
100-101 5-6 p. 418-
1 p.
artikel
164 Epoxy bonding for integrated circuits 1975
100-101 5-6 p. 409-
1 p.
artikel
165 ESD protection solutions for high voltage technologies Keppens, Bart
2006
100-101 5-6 p. 677-688
12 p.
artikel
166 Estimation of periodically changing failure rate 1979
100-101 5-6 p. 416-
1 p.
artikel
167 Estimation of reliability from multiple independent grouped censored samples with failure times known 1979
100-101 5-6 p. 415-
1 p.
artikel
168 Estimation of the reliability of hierarchical communication networks 1979
100-101 5-6 p. 411-
1 p.
artikel
169 Evaluation testing of integrated circuits 1975
100-101 5-6 p. 406-
1 p.
artikel
170 Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown Ribes, G.
2005
100-101 5-6 p. 841-844
4 p.
artikel
171 Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology Capodieci, V.
2005
100-101 5-6 p. 937-940
4 p.
artikel
172 Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides Trapes, C.
2005
100-101 5-6 p. 883-886
4 p.
artikel
173 Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy Yang, J.
2005
100-101 5-6 p. 887-890
4 p.
artikel
174 Experimental study on the thermo-mechanical effects of underfill and low-CTE substrate in a flip-chip device Morita, Yasuyuki
2006
100-101 5-6 p. 923-929
7 p.
artikel
175 Fabrication of microelectronics reticles 1979
100-101 5-6 p. 418-
1 p.
artikel
176 Factors affecting adhesion of lithographic materials 1979
100-101 5-6 p. 419-
1 p.
artikel
177 Failure mechanisms in pulsed RF power transistors 1975
100-101 5-6 p. 404-
1 p.
artikel
178 Fast electrical test monitors chip-package bond quality 1979
100-101 5-6 p. 418-
1 p.
artikel
179 Fault diagnosis in computer control systems 1979
100-101 5-6 p. 416-
1 p.
artikel
180 Fault isolation for modular electronic equipment 1979
100-101 5-6 p. 416-
1 p.
artikel
181 Feasibility study of the application of voltage contrast to printed circuit board Tan, Cher Ming
2006
100-101 5-6 p. 939-948
10 p.
artikel
182 Film carrier assembly process 1979
100-101 5-6 p. 418-
1 p.
artikel
183 Flatness measurements in semiconductor technology 1975
100-101 5-6 p. 409-
1 p.
artikel
184 GaAs lasers—A family of laser structures emerging for new applications Kirkby, P.A.
1979
100-101 5-6 p. 633-644
12 p.
artikel
185 Gate oxide failures due to anomalous stress from HBM ESD testers Duvvury, Charvaka
2006
100-101 5-6 p. 656-665
10 p.
artikel
186 4 GHz band low-noise preamplifier 1975
100-101 5-6 p. 410-411
2 p.
artikel
187 Gold ion plating: A recently developed coating process 1979
100-101 5-6 p. 430-
1 p.
artikel
188 High productivity, high reliability electron beam welder 1979
100-101 5-6 p. 430-431
2 p.
artikel
189 High reliability photodiodes for space applications 1975
100-101 5-6 p. 406-
1 p.
artikel
190 High temperature reliability and interfacial reaction of eutectic Sn–0.7Cu/Ni solder joints during isothermal aging Yoon, Jeong-Won
2006
100-101 5-6 p. 905-914
10 p.
artikel
191 Hybrid packages by the direct bonded copper process 1975
100-101 5-6 p. 413-
1 p.
artikel
192 Hybrid technology loose particles and coating materials 1975
100-101 5-6 p. 413-
1 p.
artikel
193 IC fabrication improvements combat hostile environments 1975
100-101 5-6 p. 409-
1 p.
artikel
194 IC runs complex radio 1975
100-101 5-6 p. 411-
1 p.
artikel
195 Impact of design rule reduction on size, yield, and cost of integrated circuits 1979
100-101 5-6 p. 418-
1 p.
artikel
196 Impact of interface and bulk trapped charges on transistor reliability Ghidini, G.
2005
100-101 5-6 p. 857-860
4 p.
artikel
197 Impact of nitrogen incorporation on interface states in (100)Si/HfO2 Fedorenko, Y.G.
2005
100-101 5-6 p. 802-805
4 p.
artikel
198 Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development Beckx, S.
2005
100-101 5-6 p. 1007-1011
5 p.
artikel
199 Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs—Concepts, constraints and solutions Thijs, S.
2006
100-101 5-6 p. 702-712
11 p.
artikel
200 Improved charge injection in Si nanocrystal non-volatile memories Carreras, Josep
2005
100-101 5-6 p. 899-902
4 p.
artikel
201 Improvement in high-temperature degradation by isotropic conductive adhesives including Ag–Sn alloy fillers Yamashita, M.
2006
100-101 5-6 p. 850-858
9 p.
artikel
202 Improvement of adhesion, line definition, contact resistance and semiconductor properties by sputter-etching 1979
100-101 5-6 p. 427-
1 p.
artikel
203 Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric Spitale, E.
2005
100-101 5-6 p. 895-898
4 p.
artikel
204 Impulse-bonded wiring is economical alternative to multilayer boards 1975
100-101 5-6 p. 410-
1 p.
artikel
205 Impurity effects in amorphous germanium and silicon 1979
100-101 5-6 p. 427-
1 p.
artikel
206 In-circuit tester using signature analysis adds digital LSI to its range 1979
100-101 5-6 p. 422-
1 p.
artikel
207 In-circuit unit does analog and digital testing 1979
100-101 5-6 p. 423-
1 p.
artikel
208 Influence of interface states on the charge injection in m.n.o.s. memory devices 1979
100-101 5-6 p. 426-
1 p.
artikel
209 Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics Fernández, R.
2005
100-101 5-6 p. 861-864
4 p.
artikel
210 Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4 +O2 Vamvakas, V.Em.
2005
100-101 5-6 p. 986-989
4 p.
artikel
211 In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability Langenbuch, M.
2005
100-101 5-6 p. 875-878
4 p.
artikel
212 Inspection and supervision of cable quality, during fabrication, using an auto-test unit TM02 1975
100-101 5-6 p. 406-
1 p.
artikel
213 Instrumentation for electron beam lithography 1975
100-101 5-6 p. 415-
1 p.
artikel
214 Integrated CMOS GSM baseband channel selecting filters realized using switched capacitor finite impulse response technique Dąbrowski, A.
2006
100-101 5-6 p. 949-958
10 p.
artikel
215 Interactions of industrial integration and standardization 1979
100-101 5-6 p. 411-
1 p.
artikel
216 Interactive graphics in new product quality assurance programs 1979
100-101 5-6 p. 411-
1 p.
artikel
217 Interface charge characteristics of MOS structures with different metals on steam grown oxides 1975
100-101 5-6 p. 412-
1 p.
artikel
218 Interfacial thermal stresses in solder joints of leadless chip resistors Ghorbani, H.R.
2006
100-101 5-6 p. 873-884
12 p.
artikel
219 Introduction to microprocessor software development Hunter, J.R.W.
1979
100-101 5-6 p. 441-448
8 p.
artikel
220 Introduction to special section on selected papers from EOS/ESD Symposium 2004 Iyer, Natarajan Mahadeva
2006
100-101 5-6 p. 655-
1 p.
artikel
221 Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range Prendergast, James
2005
100-101 5-6 p. 973-977
5 p.
artikel
222 Investigation of increased performance of close series stacked tube axial fans due to inclusion of diffuser element Jilesen, J.
2006
100-101 5-6 p. 984-993
10 p.
artikel
223 Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems Aubel, Oliver
2006
100-101 5-6 p. 768-773
6 p.
artikel
224 Isothermal aging effects on the microstructure and solder bump shear strength of eutectic Sn37Pb and Sn3.5Ag solders Chen, W.-M.
2006
100-101 5-6 p. 896-904
9 p.
artikel
225 Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS Barletta, Giacomo
2005
100-101 5-6 p. 994-999
6 p.
artikel
226 Life margin assessment with Physics of Failure Tools application to BGA packages Foucher, B.
2006
100-101 5-6 p. 1013-1018
6 p.
artikel
227 Light emission from Si/SiO2 superlattices fabricated by RPECVD Rölver, R.
2005
100-101 5-6 p. 915-918
4 p.
artikel
228 Liquid encapsulated compounding and Czochralski growth of semi-insulating gallium arsenide 1979
100-101 5-6 p. 425-
1 p.
artikel
229 Lithography chases the incredible shrinking line 1979
100-101 5-6 p. 418-
1 p.
artikel
230 Local-exchange renewal strategy: Maintenance man-hour requirements 1975
100-101 5-6 p. 407-
1 p.
artikel
231 Low frequency conductance and capacitance measurements on MOS capacitors in weak inversion 1975
100-101 5-6 p. 413-
1 p.
artikel
232 Low-temperature vapour-phase growth of silicon dioxide 1979
100-101 5-6 p. 425-
1 p.
artikel
233 LPCVD-silicon oxynitride films: interface properties Halova, E.
2005
100-101 5-6 p. 982-985
4 p.
artikel
234 LSI-based data encryption discourages the data thief 1979
100-101 5-6 p. 417-
1 p.
artikel
235 LSI streamlines instrument interface with standard IEEE-488 bus 1979
100-101 5-6 p. 421-
1 p.
artikel
236 Management of satellite systems reliability program 1979
100-101 5-6 p. 414-
1 p.
artikel
237 Management of total reliability 1979
100-101 5-6 p. 414-
1 p.
artikel
238 Manual backup operations: Some behavioral aspects of human reliability 1979
100-101 5-6 p. 409-
1 p.
artikel
239 Masking and duplication in the realm of 1 μm wide lines. State of the art and prospects in optics and electronics 1975
100-101 5-6 p. 409-
1 p.
artikel
240 Materials control for the manufacture of thin-film hybrid circuits 1975
100-101 5-6 p. 413-414
2 p.
artikel
241 Mathematics of diffusion controlled precipitates with time-dependent boundary conditions 1975
100-101 5-6 p. 412-
1 p.
artikel
242 Measurements and mechanisms of etchant production during the plasma oxidation of CF4 and C2F6 1979
100-101 5-6 p. 420-
1 p.
artikel
243 Megabit bubble-memory chip gets support from LSI family 1979
100-101 5-6 p. 421-
1 p.
artikel
244 Megabit bubble modules move in on mass storage 1979
100-101 5-6 p. 421-
1 p.
artikel
245 Memory design for micros Lewis, Dave
1979
100-101 5-6 p. 453-455
3 p.
artikel
246 Microprocessor implementation of tactical modems for data transmissions over v.h.f. radios 1979
100-101 5-6 p. 422-
1 p.
artikel
247 Migrated-gold resistive shorts in microcircuits 1975
100-101 5-6 p. 405-
1 p.
artikel
248 Migratory gold resistive shorts: chemical aspects of a failure mechanism 1975
100-101 5-6 p. 405-
1 p.
artikel
249 Military IC standardization, acquisition and technology 1975
100-101 5-6 p. 409-
1 p.
artikel
250 MIL-STD-781B: Effect of a “Continue Test” decision 1975
100-101 5-6 p. 407-
1 p.
artikel
251 Miniature programmable transversal filter using CCD/MOS technology 1979
100-101 5-6 p. 420-421
2 p.
artikel
252 Miniaturized thick-film RC-active filters for PCM application 1979
100-101 5-6 p. 428-
1 p.
artikel
253 Mobile ion instability in SiO2 films on silicon 1979
100-101 5-6 p. 426-
1 p.
artikel
254 Model band structure of reconstructed (111) 2×1 surface of silicon 1975
100-101 5-6 p. 413-
1 p.
artikel
255 Modelling I2L/MTL cells 1979
100-101 5-6 p. 417-
1 p.
artikel
256 Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance Lujan, G.S.
2005
100-101 5-6 p. 794-797
4 p.
artikel
257 Modelling transient faults in TMR computer systems 1975
100-101 5-6 p. 407-
1 p.
artikel
258 Model of gas phase etching of silicon with HCl 1979
100-101 5-6 p. 420-
1 p.
artikel
259 Modularity is not a matter of size 1979
100-101 5-6 p. 423-
1 p.
artikel
260 Monolithic approach bears fruit in data conversion 1979
100-101 5-6 p. 422-
1 p.
artikel
261 MOS semiconductor random access memory failure rate 1979
100-101 5-6 p. 410-
1 p.
artikel
262 Multiband and multivalley effective-mass theory for impurities in semiconductors 1979
100-101 5-6 p. 425-
1 p.
artikel
263 Multichip integrated circuit memory with photoformed plated conductors 1975
100-101 5-6 p. 411-
1 p.
artikel
264 Multiobjective optimization by the Surrogate Worth Trade-off method 1979
100-101 5-6 p. 414-
1 p.
artikel
265 Multiple insulator layers on GaAs studied by auger analysis 1979
100-101 5-6 p. 428-
1 p.
artikel
266 Nano-mechanical electro-thermal probe array used for high-density storage based on NEMS technology Yang, Zunxian
2006
100-101 5-6 p. 805-810
6 p.
artikel
267 New crossovers using a combined film technique 1979
100-101 5-6 p. 427-
1 p.
artikel
268 New developments in thick film conductors 1979
100-101 5-6 p. 429-430
2 p.
artikel
269 New insights into board level drop impact Wong, E.H.
2006
100-101 5-6 p. 930-938
9 p.
artikel
270 New method for the electronic structure of heterojunctions—Application to the (100) Ge-GaAs interfaces 1979
100-101 5-6 p. 427-
1 p.
artikel
271 New optoelectronic devices and their applications de Vooght, Michel
1979
100-101 5-6 p. 611-622
12 p.
artikel
272 Noise immunity of CMOS integrated circuits 1979
100-101 5-6 p. 423-
1 p.
artikel
273 [No title] Stojcev, Mile
2005
100-101 5-6 p. 1017-1018
2 p.
artikel
274 [No title] Stojcev, Mile
2005
100-101 5-6 p. 1019-1020
2 p.
artikel
275 [No title] Hurley, Paul
2005
100-101 5-6 p. 767-769
3 p.
artikel
276 [No title] Stojcev, Mile
2005
100-101 5-6 p. 1012-1013
2 p.
artikel
277 [No title] Stojcev, Mile
2005
100-101 5-6 p. 1014-1016
3 p.
artikel
278 [No title] Stojcev, Mile
2006
100-101 5-6 p. 1025-1026
2 p.
artikel
279 Observation and characterization of defects in HfO2 high-K gate dielectric layers Kaushik, Vidya
2005
100-101 5-6 p. 798-801
4 p.
artikel
280 OEM control systems Hodge, Peter H.
1979
100-101 5-6 p. 535-540
6 p.
artikel
281 On chemical cleaning for thermocompression bonding 1975
100-101 5-6 p. 409-410
2 p.
artikel
282 On computer-oriented design of microstrip amplifiers with component tolerance assignment 1975
100-101 5-6 p. 406-
1 p.
artikel
283 On fault trees and other reliability evaluation methods 1979
100-101 5-6 p. 412-
1 p.
artikel
284 On solution schemes for time-independent thermomechanical analysis for structures containing polymeric materials Lai, Yi-Shao
2006
100-101 5-6 p. 859-863
5 p.
artikel
285 On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers Pétry, J.
2005
100-101 5-6 p. 815-818
4 p.
artikel
286 On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiN x /SiO2/Si fabricated by ECR-CVD Dueñas, S.
2005
100-101 5-6 p. 978-981
4 p.
artikel
287 On the propagation of impulses in thin film distributed parameter networks 1975
100-101 5-6 p. 414-
1 p.
artikel
288 On the SILC mechanism in MOSFET’s with ultrathin oxides Bauza, D.
2005
100-101 5-6 p. 849-852
4 p.
artikel
289 On the surface recombination effect on some properties of semiconductor devices—Dynamic relationships 1979
100-101 5-6 p. 424-425
2 p.
artikel
290 On the temperature dependence of subthreshold currents in MOS electron inversion layers 1979
100-101 5-6 p. 425-
1 p.
artikel
291 Operation and Characterization of Micronic and Submicronic MESFETs 1975
100-101 5-6 p. 409-
1 p.
artikel
292 Optical and electrical characterization of hafnium oxide deposited by MOCVD Lu, Y.
2005
100-101 5-6 p. 965-968
4 p.
artikel
293 Optimal allocation of fault detectors 1979
100-101 5-6 p. 414-
1 p.
artikel
294 Optimal replacement and build policies 1979
100-101 5-6 p. 417-
1 p.
artikel
295 Optimization of low temperature silicon nitride processes for improvement of device performance Sleeckx, E.
2005
100-101 5-6 p. 865-868
4 p.
artikel
296 Packages and film resistors for hybrid microcircuits 1975
100-101 5-6 p. 413-
1 p.
artikel
297 Parallel processing with minicomputers increases performance, availability 1979
100-101 5-6 p. 421-
1 p.
artikel
298 Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors Schram, T.
2005
100-101 5-6 p. 779-782
4 p.
artikel
299 Photochemical decomposition mechanisms for AZ-type photoresists 1979
100-101 5-6 p. 418-419
2 p.
artikel
300 Physical and thermodynamic properties of silicon tetrachloride 1979
100-101 5-6 p. 417-
1 p.
artikel
301 Physical fundamentals of external transient latch-up and corrective actions Domański, K.
2006
100-101 5-6 p. 689-701
13 p.
artikel
302 Physical limits in digital electronics 1975
100-101 5-6 p. 409-
1 p.
artikel
303 Planar InSb photodiodes fabricated by Be and Mg ion implantation 1975
100-101 5-6 p. 414-415
2 p.
artikel
304 Plasma etch monitoring with laser interferometry 1979
100-101 5-6 p. 430-
1 p.
artikel
305 Porcelain-on-steel boards can launch a thousand chips 1979
100-101 5-6 p. 417-
1 p.
artikel
306 Post deposition UV-induced O2 annealing of HfO2 thin films Fang, Q.
2005
100-101 5-6 p. 957-960
4 p.
artikel
307 Potential remedies for the V T/V fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey Deweerd, W.
2005
100-101 5-6 p. 786-789
4 p.
artikel
308 Power supplies for C-MOS 1975
100-101 5-6 p. 411-
1 p.
artikel
309 Practical components for fibre optic data transmission Watts, J.K.
1979
100-101 5-6 p. 623-632
10 p.
artikel
310 Practical uses of accelerated testing at Motorola 1975
100-101 5-6 p. 404-
1 p.
artikel
311 Predicting the Reliability of Systems Using Complex MOS/LSI Devices in Automotive Application 1975
100-101 5-6 p. 408-
1 p.
artikel
312 Prediction of software reliability during debugging 1975
100-101 5-6 p. 407-
1 p.
artikel
313 Printed Circuit Troubleshooting G.W.A.D.,
1975
100-101 5-6 p. 417-
1 p.
artikel
314 Probing stress effects in HfO2 gate stacks with time dependent measurements Young, Chadwin D.
2005
100-101 5-6 p. 806-810
5 p.
artikel
315 Problems in the production and measurement of very high vacuum, especially in applications, and a new approach to measurement based on the use of field emission 1979
100-101 5-6 p. 428-
1 p.
artikel
316 Problems of the application of microprocessors 1979
100-101 5-6 p. 422-
1 p.
artikel
317 Process control by means of accelerated testing 1975
100-101 5-6 p. 410-
1 p.
artikel
318 Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics Schwalke, Udo
2005
100-101 5-6 p. 790-793
4 p.
artikel
319 Product reliability due to random load variations at elevated temperatures 1979
100-101 5-6 p. 416-417
2 p.
artikel
320 Products liability in Europe: Proposed reforms: The Council of Europe Convention and the draft directive of the European Economic Community 1979
100-101 5-6 p. 409-
1 p.
artikel
321 Products liability in the United Kingdom: The current situation 1979
100-101 5-6 p. 409-
1 p.
artikel
322 Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance O’Connor, Robert
2005
100-101 5-6 p. 869-874
6 p.
artikel
323 Properties of zirconium nitride film resistors deposited by reactive RF sputtering 1975
100-101 5-6 p. 414-
1 p.
artikel
324 Publications, notices, calls for papers, etc. 1975
100-101 5-6 p. 401-402
2 p.
artikel
325 Pulsed electron-beam processing of semiconductor devices 1979
100-101 5-6 p. 431-
1 p.
artikel
326 Quality improvement through defect source analysis 1979
100-101 5-6 p. 415-
1 p.
artikel
327 Radiation levels associated with the electron-beam metallization process 1979
100-101 5-6 p. 431-
1 p.
artikel
328 Rapid RMA assessment—The painless plot 1979
100-101 5-6 p. 422-423
2 p.
artikel
329 RC-active filters in single-layer tantalum RC-film technology 1979
100-101 5-6 p. 428-
1 p.
artikel
330 Reappraising CCD memories: can they stand up to RAMs? 1979
100-101 5-6 p. 422-
1 p.
artikel
331 Recent developments in gold conductor bonding performance and failure mechanisms 1979
100-101 5-6 p. 410-
1 p.
artikel
332 Recent innovations in semiconductor materials 1979
100-101 5-6 p. 417-
1 p.
artikel
333 Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus 1979
100-101 5-6 p. 426-427
2 p.
artikel
334 Reliability and flow graphs Råde, L.
1975
100-101 5-6 p. 447-450
4 p.
artikel
335 Reliability and maintainability growth of a modern, high performance aircraft, the F-14A 1979
100-101 5-6 p. 413-
1 p.
artikel
336 Reliability and performance limitations in SiC power devices Singh, Ranbir
2006
100-101 5-6 p. 713-730
18 p.
artikel
337 Reliability assessment of small signal GaAs FETS 1979
100-101 5-6 p. 410-
1 p.
artikel
338 Reliability based quality (RBQ) technique for evaluating the degradation of reliability during manufacturing 1979
100-101 5-6 p. 414-
1 p.
artikel
339 Reliability case history of an airborne air data computer 1975
100-101 5-6 p. 406-407
2 p.
artikel
340 Reliability demonstration: purposes, practices and value 1975
100-101 5-6 p. 407-
1 p.
artikel
341 Reliability evaluation. A comparative study of different techniques 1975
100-101 5-6 p. 403-
1 p.
artikel
342 Reliability evaluation of hermetic integrated circuit chips in plastic packages 1975
100-101 5-6 p. 405-
1 p.
artikel
343 Reliability growth of electronic equipment Mead, P.H.
1975
100-101 5-6 p. 439-443
5 p.
artikel
344 Reliability Improvements 1975
100-101 5-6 p. 408-
1 p.
artikel
345 Reliability learning model: Application to color TV 1979
100-101 5-6 p. 412-
1 p.
artikel
346 Reliability of a 2-Unit standby redundant system with repair, maintenance and standby failure 1975
100-101 5-6 p. 408-
1 p.
artikel
347 Reliability of gate dielectrics and metal–insulator–metal capacitors Martin, Andreas
2005
100-101 5-6 p. 834-840
7 p.
artikel
348 Reliability of interconnections on microcircuits 1975
100-101 5-6 p. 406-
1 p.
artikel
349 Reliability of microwave gallium arsenide field effect transistors 1975
100-101 5-6 p. 404-
1 p.
artikel
350 Reliability optimization in the design of telephone networks 1979
100-101 5-6 p. 413-
1 p.
artikel
351 Reliability studies at Carleton University 1975
100-101 5-6 p. 403-
1 p.
artikel
352 Reliability study of microwave transistors 1975
100-101 5-6 p. 404-
1 p.
artikel
353 Repairs to complex hybrid circuits—their effect on reliability 1975
100-101 5-6 p. 414-
1 p.
artikel
354 Resist materials for fine line lithography 1979
100-101 5-6 p. 419-
1 p.
artikel
355 Resolution improvement of acoustic microimaging by continuous wavelet transform for semiconductor inspection Zhang, Guang-Ming
2006
100-101 5-6 p. 811-821
11 p.
artikel
356 Results of a 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, part 2 survey of dominant IC failure mechanisms and analysis of failure causes kemény, A.P.
1975
100-101 5-6 p. 499-500
2 p.
artikel
357 Results of A 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, part 1 test results and electrical failure analysis Kemény, A.P.
1975
100-101 5-6 p. 469-470
2 p.
artikel
358 Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitors 1979
100-101 5-6 p. 423-
1 p.
artikel
359 Reverse bias stresses on emitter-base junctions 1975
100-101 5-6 p. 406-
1 p.
artikel
360 Reverse short channel effects in high-k gated nMOSFETs Han, J.-P.
2005
100-101 5-6 p. 783-785
3 p.
artikel
361 Scanned surface photovoltage detection of defects in silicon wafers 1975
100-101 5-6 p. 404-
1 p.
artikel
362 Screen printable inks in hybrid microelectronics: availability and physical properties 1979
100-101 5-6 p. 429-
1 p.
artikel
363 Screen printable inks in hybrid microelectronics: materials and their behaviour 1979
100-101 5-6 p. 429-
1 p.
artikel
364 Screen printing inks for high resolution rheology and printing 1979
100-101 5-6 p. 429-
1 p.
artikel
365 Self-consistent pseudopotential calculations of the equilibrium properties of bulk and surface Si 1979
100-101 5-6 p. 423-
1 p.
artikel
366 Selling reliability engineering to the company 1979
100-101 5-6 p. 412-
1 p.
artikel
367 Separation of surface and bulk gases in contact materials of vacuum switches—Determination of gases and effect on vacuum breakdown 1979
100-101 5-6 p. 410-
1 p.
artikel
368 Sequencing of diagnostic tests for fault isolation by dynamic programming 1979
100-101 5-6 p. 413-
1 p.
artikel
369 Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing Pecora, A.
2005
100-101 5-6 p. 879-882
4 p.
artikel
370 Silicon wafer damage—Two useful investigation techniques 1979
100-101 5-6 p. 410-
1 p.
artikel
371 Single-chip microcomputers with 1 million bits of information, English-language programming, and canned software are seen ahead 1979
100-101 5-6 p. 421-
1 p.
artikel
372 Slow states in InSb/SiOx thin film transistors 1975
100-101 5-6 p. 414-
1 p.
artikel
373 Small field effect transistors. Research on the normally-off channel type 1975
100-101 5-6 p. 410-
1 p.
artikel
374 Software packages Healey, Martin
1979
100-101 5-6 p. 549-554
6 p.
artikel
375 Solder bump interconnected, multiple chip, thick film hybrid for 40-character alphanumeric LCD application 1979
100-101 5-6 p. 429-
1 p.
artikel
376 Solubility of gold in p-type silicon 1975
100-101 5-6 p. 412-
1 p.
artikel
377 Some applications of molecular electronics 1979
100-101 5-6 p. 417-
1 p.
artikel
378 Some approaches to Bayesian reliability demonstration 1975
100-101 5-6 p. 407-
1 p.
artikel
379 Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds 1979
100-101 5-6 p. 420-
1 p.
artikel
380 Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds 1979
100-101 5-6 p. 418-
1 p.
artikel
381 Some design aspects of m.o.s.l.s.i. operational amplifiers 1979
100-101 5-6 p. 419-
1 p.
artikel
382 Some recents advances in integrated crystal filters 1979
100-101 5-6 p. 420-
1 p.
artikel
383 Some reliability aspects of carbon film resistors 1975
100-101 5-6 p. 405-406
2 p.
artikel
384 SOS island edge profiles following oxidation 1975
100-101 5-6 p. 413-
1 p.
artikel
385 Special report: C-MOS enlarges its territory 1975
100-101 5-6 p. 409-
1 p.
artikel
386 Special seminex 1979 edition semiconductors and microprocessors Dummer, G.W.A.
1979
100-101 5-6 p. 407-
1 p.
artikel
387 Specification of an automatic test system vs an optimum maintenance policy and equipment reliability 1979
100-101 5-6 p. 416-
1 p.
artikel
388 Specifications and reliability Thompson, P.M.
1975
100-101 5-6 p. 527-528
2 p.
artikel
389 Spectroscopic determination of the energy gaps in the inversion layer band structure on vicinal planes of Si (001) 1979
100-101 5-6 p. 426-
1 p.
artikel
390 Sputtering process model of deposition rate 1979
100-101 5-6 p. 428-
1 p.
artikel
391 Statistical analysis of tin whisker growth Fang, Tong
2006
100-101 5-6 p. 846-849
4 p.
artikel
392 Stochastic behavior of some 2-unit redundant systems 1979
100-101 5-6 p. 412-
1 p.
artikel
393 Stochastic behavior of two-unit paralleled redundant systems with repair maintenance Nakagawa, Toshio
1975
100-101 5-6 p. 457-461
5 p.
artikel
394 Stochastic behaviour of a two-unit priority standby redundant system with repair 1975
100-101 5-6 p. 407-
1 p.
artikel
395 Stress analysis and bending tests for GaAs wafers Dreyer, W.
2006
100-101 5-6 p. 822-835
14 p.
artikel
396 Structure of the oxide damage under progressive breakdown Palumbo, F.
2005
100-101 5-6 p. 845-848
4 p.
artikel
397 Study of CDM specific effects for a smart power input protection structure Etherton, M.
2006
100-101 5-6 p. 666-676
11 p.
artikel
398 Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF Maanane, H.
2006
100-101 5-6 p. 994-1000
7 p.
artikel
399 Study of the power capability of LDMOS and the improved methods Sun, Zhilin
2006
100-101 5-6 p. 1001-1005
5 p.
artikel
400 Surface quantum oscillations in (110) and (111) n-type silicon inversion layers 1975
100-101 5-6 p. 413-
1 p.
artikel
401 Susceptibility of microwelds in hybrid microcircuits to corrosion degradation 1975
100-101 5-6 p. 405-
1 p.
artikel
402 Tailoring RAM to meet the user's need 1979
100-101 5-6 p. 422-
1 p.
artikel
403 Technical and practical considerations of incorporating microprocessors in OEM products—A management view Sambell, S.
1979
100-101 5-6 p. 523-533
11 p.
artikel
404 Temperature dependent threshold behavior of depletion mode MOSFETs—Characterization and simulation 1979
100-101 5-6 p. 424-
1 p.
artikel
405 Testability analysis: Predict it more closely 1979
100-101 5-6 p. 417-
1 p.
artikel
406 Testing of the layout of integrated solid-state circuits, in particular of bipolar ones 1975
100-101 5-6 p. 411-
1 p.
artikel
407 The 8086—An advanced 16-bit microcomputer Kornstein, Howard
1979
100-101 5-6 p. 591-597
7 p.
artikel
408 The application of low cost microprocessors in keyboard design Lowe, John M.
1979
100-101 5-6 p. 563-569
7 p.
artikel
409 The Burr distribution as a failure model from a Bayesian approach 1979
100-101 5-6 p. 413-
1 p.
artikel
410 The Canadian Nuclear Association. R. & M. Standard 1975
100-101 5-6 p. 403-404
2 p.
artikel
411 The corrosive activity of fluxes 1975
100-101 5-6 p. 406-
1 p.
artikel
412 The effect of die attach voiding on the thermal resistance of chip level packages Fleischer, Amy S.
2006
100-101 5-6 p. 794-804
11 p.
artikel
413 The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors Juan, P.C.
2005
100-101 5-6 p. 1003-1006
4 p.
artikel
414 The effect of heat treatment on unpassivated and passivated gallium arsenide surfaces 1979
100-101 5-6 p. 426-
1 p.
artikel
415 The effects of SO2 and H2S atmospheres on thick film resistors Coleman, M.V.
1975
100-101 5-6 p. 445-446
2 p.
artikel
416 The expanding role of CMOS in digital L.S.I. Watson, David
1979
100-101 5-6 p. 473-478
6 p.
artikel
417 The F-16 RIW program 1979
100-101 5-6 p. 415-
1 p.
artikel
418 The fundamental limitations of digital semiconductor technology 1979
100-101 5-6 p. 417-
1 p.
artikel
419 The graphical reliability evaluation of three-state device networks 1975
100-101 5-6 p. 404-
1 p.
artikel
420 The influence of gold when present at a silicon/silicon dioxide interface 1979
100-101 5-6 p. 425-
1 p.
artikel
421 The limitations of reactively-bonded thick film gold conductors 1979
100-101 5-6 p. 427-
1 p.
artikel
422 The logistics of life cycle cost 1979
100-101 5-6 p. 411-
1 p.
artikel
423 The microcircuit pacemaker. Space age spin-off to achieve reliability and long life 1975
100-101 5-6 p. 411-
1 p.
artikel
424 The need for feedback of field RAM data 1979
100-101 5-6 p. 414-
1 p.
artikel
425 The NOVRAM—A new concept in electrically alterable memories 1979
100-101 5-6 p. 421-
1 p.
artikel
426 The numerical analysis of anomalous doping profiles of phosphorus in silicon 1979
100-101 5-6 p. 423-
1 p.
artikel
427 The operational impact of Navy's first TAAF program 1979
100-101 5-6 p. 415-
1 p.
artikel
428 Theoretical influence of surface states and bulk traps on thin film transistor characteristics 1975
100-101 5-6 p. 414-
1 p.
artikel
429 The race heats up in fast static RAMs 1979
100-101 5-6 p. 421-
1 p.
artikel
430 The recognition of latent defects in electronic circuits by measuring phase noise 1979
100-101 5-6 p. 411-
1 p.
artikel
431 Thermal stress in bonded joints 1979
100-101 5-6 p. 411-
1 p.
artikel
432 The set approach to determine the frequency of system failure 1975
100-101 5-6 p. 407-
1 p.
artikel
433 The S9900—Mini on a chip? Walsh, M.J.
1979
100-101 5-6 p. 579-590
12 p.
artikel
434 The software development notebook—A proven technique 1979
100-101 5-6 p. 415-
1 p.
artikel
435 The squeegee in printing of electronic circuits Dubey, G.C.
1975
100-101 5-6 p. 427-429
3 p.
artikel
436 Thick film technology 1979
100-101 5-6 p. 430-
1 p.
artikel
437 Title section, volume contents and author index for volume 19, 1979 1979
100-101 5-6 p. i-vi
nvt p.
artikel
438 Tools for building microprocessor software systems Baker, Keith D.
1979
100-101 5-6 p. 555-562
8 p.
artikel
439 Top-end microprocessors—Introductory review Cooke, P.
1979
100-101 5-6 p. 571-573
3 p.
artikel
440 Transient fracturing of solder joints subjected to displacement-controlled impact loads Yeh, Chang-Lin
2006
100-101 5-6 p. 885-895
11 p.
artikel
441 Transistor structure relation to secondary breakdown and its effects Aharoni, H.
1975
100-101 5-6 p. 451-452
2 p.
artikel
442 Transition metal deep centers in GaAs, GaP and Si 1979
100-101 5-6 p. 425-426
2 p.
artikel
443 Transport properties of doped amorphous silicon 1979
100-101 5-6 p. 426-
1 p.
artikel
444 Trimming of thin and thick film resistors 1979
100-101 5-6 p. 428-429
2 p.
artikel
445 “Troubleshooting” color TV. More smoke than fire may emanate from widely publicized consumer surveys and hazard data 1975
100-101 5-6 p. 408-409
2 p.
artikel
446 Tunnel injection into gate oxide traps 1975
100-101 5-6 p. 413-
1 p.
artikel
447 Two dimensional electron GaAs at a semiconductor-semiconductor interface 1979
100-101 5-6 p. 423-
1 p.
artikel
448 Two-dimensional position-sensitive photodetector with high linearity made with standard i.c.-technology 1979
100-101 5-6 p. 422-
1 p.
artikel
449 Two instrument ICs sum six inputs 1975
100-101 5-6 p. 411-
1 p.
artikel
450 Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria Sánchez, F.J. Garcı́a
2006
100-101 5-6 p. 731-742
12 p.
artikel
451 Universal logic gates for custom-design I.C. requirements Hurst, S.L.
1979
100-101 5-6 p. 457-461
5 p.
artikel
452 Vapour pressure measurement of low volatility precursors Rushworth, S.A.
2005
100-101 5-6 p. 1000-1002
3 p.
artikel
453 Vertically high-density interconnection for mobile application Katahira, Takayoshi
2006
100-101 5-6 p. 756-762
7 p.
artikel
454 VLSI and other solid-state devices. New fabrication technologies put us on the threshold of a quantum jump in IC complexity 1979
100-101 5-6 p. 418-
1 p.
artikel
455 VLSI shakes the foundations of computer architecture 1979
100-101 5-6 p. 422-
1 p.
artikel
456 V-MOS packs 16 kilobits into static random-access memory 1979
100-101 5-6 p. 422-
1 p.
artikel
457 Wafer flatness: An overview of measurement considerations and equipment correlation 1979
100-101 5-6 p. 419-
1 p.
artikel
458 Warranties—The easy way out 1979
100-101 5-6 p. 410-
1 p.
artikel
459 What to look for in logic timing analyzers 1979
100-101 5-6 p. 421-
1 p.
artikel
460 Width dependence of electromigration life in Al-Cu, Al-Cu-Si and Ag conductors 1975
100-101 5-6 p. 405-
1 p.
artikel
461 X-ray diffraction stress measurements in thin films 1975
100-101 5-6 p. 414-
1 p.
artikel
462 Yield-area analysis: Part II—Effects of photomask alignment errors on zero yield loci 1979
100-101 5-6 p. 418-
1 p.
artikel
463 Zero bias anomaly in tunnel resistance and electron-electron interaction 1979
100-101 5-6 p. 425-
1 p.
artikel
                             463 gevonden resultaten
 
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