| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Bayesian reliability assessment of complex systems for binomial sampling
|
|
|
1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 2 |
Acceleration factors for plastic encapsulated semiconductor devices and their relationship to field performance
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
artikel
|
| 3 |
A CdSe thin-film field effect transistor
|
|
|
1979
|
100-101 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 4 |
A closer look at hybrid microcircuit screening
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 5 |
A comparative reliability evaluation of CMOS. A maturing technology
|
|
|
1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
|
| 6 |
A comprehensive model for oxide degradation
|
Irrera, Fernanda
|
|
2005
|
100-101 |
5-6 |
p. 853-856
4 p.
|
artikel
|
| 7 |
A confidence interval for the Barlow-Scheuer reliability growth model
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 8 |
A correlation interface circuit for microprocessor systems
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 9 |
Acoustic imaging for nondestructive evaluation
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 10 |
A decomposition method for computing system reliability by a matrix expression
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 11 |
A design review approach toward dynamic RAM reliability
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 12 |
Adhesion mechanisms of thick film conductors
|
|
|
1979
|
100-101 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 13 |
Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2
|
Truong, L.
|
|
2005
|
100-101 |
5-6 |
p. 823-826
4 p.
|
artikel
|
| 14 |
Advances in double sided wafer processing
|
|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 15 |
Advances in planar plasma etching equipment
|
|
|
1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 16 |
A general procedure for designing tests for LSI digital circuits
|
|
|
1979
|
100-101 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 17 |
A laser projector for edge-rounding contour measurement on polished wafers
|
|
|
1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 18 |
A low cost reliability test specification
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 19 |
A metallization system for microwave and UHF power transistors
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 20 |
A method for determining the statistically weighted percent fault detection coverage of a self-test program
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 21 |
A method for dynamic analysis of integrated MOS inverters with non-linear resistive loads
|
|
|
1979
|
100-101 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 22 |
A microelectronic test pattern for measuring uniformity of an integrated circuit fabrication technology
|
|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 23 |
A minicomputer-controlled read-only-memory programmer
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 24 |
A modified reliability expression for the electromigration time-to-failure
|
Bobbio, A.
|
|
1975
|
100-101 |
5-6 |
p. 431-433
3 p.
|
artikel
|
| 25 |
Amorphous silicon shows promise for flat-panel TV display
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 26 |
A multi-microcomputer interface
|
Wood, A.R.
|
|
1979
|
100-101 |
5-6 |
p. 513-522
10 p.
|
artikel
|
| 27 |
An academic profile. Education in reliability engineering
|
|
|
1975
|
100-101 |
5-6 |
p. 403-
1 p.
|
artikel
|
| 28 |
Analog ICs divide accurately to conquer computation problems
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 29 |
Analogue sampling ICs in data acquisition systems
|
Bowers, Derek F.
|
|
1979
|
100-101 |
5-6 |
p. 497-511
15 p.
|
artikel
|
| 30 |
Analysis of deposited glass layer defects
|
|
|
1975
|
100-101 |
5-6 |
p. 404-
1 p.
|
artikel
|
| 31 |
Analysis of semiconductor surfaces by spark source mass spectrometry
|
|
|
1975
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 32 |
Analysis of thin oxide films on silicon by back-scattering techniques
|
|
|
1979
|
100-101 |
5-6 |
p. 431-
1 p.
|
artikel
|
| 33 |
An evaluation of design-sensitive maintainability-prediction technique
|
|
|
1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 34 |
A new analytical expression for the T.C.R. of thin monocrystalline metal films
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 35 |
A new breed of linear ICs runs at 1-volt levels
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 36 |
A new technique for component mounting and interconnection: double face circuitry on polyimide film
|
|
|
1979
|
100-101 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 37 |
A new ultra low power ULA and its application
|
Forshaw, P.
|
|
1979
|
100-101 |
5-6 |
p. 463-472
10 p.
|
artikel
|
| 38 |
An improved algorithm for network reliability
|
|
|
1979
|
100-101 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 39 |
An improved algorithm for reliability optimization
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 40 |
Anisotropic plasma etching of semiconductor materials
|
|
|
1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 41 |
An optical pattern generator for large area devices and direct wafer stepping
|
|
|
1979
|
100-101 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 42 |
A note on heuristic methods in optimal system reliability
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 43 |
A note on the implementation of three-valued unary operators with C-MOS integrated circuits
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 44 |
A novel double dielectric two phase CCD with overlapping gates
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 45 |
Application of discrete Fourier transform to decision-making in reliability
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 46 |
Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon
|
|
|
1979
|
100-101 |
5-6 |
p. 423-424
2 p.
|
artikel
|
| 47 |
Applications for silicon tetrafluoride in plasma etching
|
|
|
1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 48 |
Applications of thin film and thick film technologies to high microwave frequencies
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 49 |
A profile of activities in reliability studies at the University of Windsor
|
|
|
1975
|
100-101 |
5-6 |
p. 403-
1 p.
|
artikel
|
| 50 |
A quantitative method of reliability estimation for surface mount solder joints based on heating factor Q η
|
Tao, Bo
|
|
2006
|
100-101 |
5-6 |
p. 864-872
9 p.
|
artikel
|
| 51 |
A reliability-driven placement procedure based on thermal-force model
|
Lee, Jing
|
|
2006
|
100-101 |
5-6 |
p. 973-983
11 p.
|
artikel
|
| 52 |
A reliability growth model
|
|
|
1979
|
100-101 |
5-6 |
p. 411-412
2 p.
|
artikel
|
| 53 |
A report on a survey of the specification and attainment of reliability in communications equipment
|
|
|
1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 54 |
A review of microprocessor software
|
Rundle, A.R.
|
|
1979
|
100-101 |
5-6 |
p. 541-548
8 p.
|
artikel
|
| 55 |
Assembly technologies for hybrid integrated circuits and their mechanization
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 56 |
A three-state system Markov model
|
Proctor, C.L.
|
|
1975
|
100-101 |
5-6 |
p. 463-464
2 p.
|
artikel
|
| 57 |
A universal MOS-LSI testing system
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 58 |
Automated circuit testers lead the way out of continuity maze
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 59 |
Automated inspection system for various defects in screenprinted patterns
|
|
|
1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 60 |
Availability: A low-density deployment case study
|
|
|
1979
|
100-101 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 61 |
Availability of a parallel redundant complex system
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 62 |
Availability of k-out-of-m:G repairable system with nonidentical elements
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 63 |
AVD® technology for deposition of next generation devices
|
Weber, U.
|
|
2005
|
100-101 |
5-6 |
p. 945-948
4 p.
|
artikel
|
| 64 |
Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers
|
|
|
1979
|
100-101 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 65 |
16 bit microprocessor for the hard environment
|
Fox, R.E.
|
|
1979
|
100-101 |
5-6 |
p. 599-610
12 p.
|
artikel
|
| 66 |
Bond strain and defects at interfaces in high-k gate stacks
|
Lucovsky, G.
|
|
2005
|
100-101 |
5-6 |
p. 770-778
9 p.
|
artikel
|
| 67 |
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced—CAFM
|
Blasco, X.
|
|
2005
|
100-101 |
5-6 |
p. 811-814
4 p.
|
artikel
|
| 68 |
Bubble memories demand unique test methods
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 69 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1975
|
100-101 |
5-6 |
p. 399-
1 p.
|
artikel
|
| 70 |
Carrier transport across heterojunction interfaces
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 71 |
Causes of wavesoldering defects
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 72 |
CFCET: A hardware-based control flow checking technique in COTS processors using execution tracing
|
Rajabzadeh, Amir
|
|
2006
|
100-101 |
5-6 |
p. 959-972
14 p.
|
artikel
|
| 73 |
Challenges for dielectric materials in future integrated circuit technologies
|
Garner, C.M.
|
|
2005
|
100-101 |
5-6 |
p. 919-924
6 p.
|
artikel
|
| 74 |
Channel current limitations in GaAs MESFETS
|
|
|
1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 75 |
Characterisation of the Al2O3 films deposited by ultrasonic spray pyrolysis and atomic layer deposition methods for passivation of 4H–SiC devices
|
Wolborski, Maciej
|
|
2006
|
100-101 |
5-6 |
p. 743-755
13 p.
|
artikel
|
| 76 |
Characteristics of current crowding in flip-chip solder bumps
|
Lai, Yi-Shao
|
|
2006
|
100-101 |
5-6 |
p. 915-922
8 p.
|
artikel
|
| 77 |
Characteristics of enhancement/depletion (E/D) gate MOSFET fabricated using ion implantation
|
|
|
1975
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 78 |
Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100)
|
Sibai, A.
|
|
2005
|
100-101 |
5-6 |
p. 941-944
4 p.
|
artikel
|
| 79 |
Characterization of thick film compositions on porcelain steel substrates
|
|
|
1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 80 |
Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200°C
|
Vasilopoulou, M.
|
|
2005
|
100-101 |
5-6 |
p. 990-993
4 p.
|
artikel
|
| 81 |
Charge storage peculiarities in poly-Si–SiO2–Si memory devices with Si nanocrystals rich SiO2
|
Turchanikov, V.I.
|
|
2005
|
100-101 |
5-6 |
p. 903-906
4 p.
|
artikel
|
| 82 |
Charge-transfer filtering
|
|
|
1979
|
100-101 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 83 |
Chip handles I/O channel
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 84 |
Circuit-analysis program can model many digital ICs automatically
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 85 |
Circuits employing small-size field effect transistors
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 86 |
C-MOS codec solves phone line problems with bipolar interface
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 87 |
Codec has on-chip signaling for phone applications
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 88 |
Codecs for P.C.M. processing
|
Jenkins, Mike
|
|
1979
|
100-101 |
5-6 |
p. 479-496
18 p.
|
artikel
|
| 89 |
Combined ferrite-dielectric substrates for integrated circuits in microwave technique
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 90 |
Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N
|
Guhel, Y.
|
|
2006
|
100-101 |
5-6 |
p. 786-793
8 p.
|
artikel
|
| 91 |
Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides
|
Zander, D.
|
|
2005
|
100-101 |
5-6 |
p. 891-894
4 p.
|
artikel
|
| 92 |
Comparison of metal gate electrodes on MOCVD HfO2
|
Lemme, M.C.
|
|
2005
|
100-101 |
5-6 |
p. 953-956
4 p.
|
artikel
|
| 93 |
Component replacement and the use of Relcode
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 94 |
Components of microcomputer systems
|
Lister, P.F.
|
|
1979
|
100-101 |
5-6 |
p. 433-440
8 p.
|
artikel
|
| 95 |
Computational time and absolute error comparison for reliability expression derived by various methods
|
Aggarwal, K.K.
|
|
1975
|
100-101 |
5-6 |
p. 465-467
3 p.
|
artikel
|
| 96 |
Computation-based reliability analysis in real time applications
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 97 |
“Condensation” of impurities in semiconductors (Si+Li)
|
|
|
1975
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 98 |
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra
|
Lucovsky, G.
|
|
2005
|
100-101 |
5-6 |
p. 827-830
4 p.
|
artikel
|
| 99 |
Consider 1024-bit C-MOS RAMs for small static-memory systems
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 100 |
Cost of ownership—an overview. Life cycle costs: evaluation of avionic system reliability improvements
|
|
|
1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 101 |
CP-140 aircraft reliability program—A “tailored” management approach
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 102 |
Crested barrier in the tunnel stack of non-volatile memories
|
Irrera, Fernanda
|
|
2005
|
100-101 |
5-6 |
p. 907-910
4 p.
|
artikel
|
| 103 |
Critical dimension control in photolithography based on the yield by a simulation program
|
Kang, H.Y.
|
|
2006
|
100-101 |
5-6 |
p. 1006-1012
7 p.
|
artikel
|
| 104 |
Current/voltage characteristics of transistors operating in current-mode second breakdown
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 105 |
Decision theoretic approach to the design of reliability systems
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 106 |
Degradation mechanisms in rewritable n-channel FAMOS devices
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
artikel
|
| 107 |
Degradation of electrical contacts caused by oscillatory micromotion between the contact members
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 108 |
Design for quality: A designer's notebook for electronic systems
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 109 |
Designing low power 12 bit microprocessor systems
|
Watson, David
|
|
1979
|
100-101 |
5-6 |
p. 575-578
4 p.
|
artikel
|
| 110 |
Design of reliability acceptance sampling plans based upon prior distribution
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 111 |
Determination of complete carrier density and drift mobility profiles in thin semiconductor layers
|
|
|
1979
|
100-101 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 112 |
Determination of useful life of two-layer metallization systems via accelerated stressing
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 113 |
Determinations of MTTF from the transition probability matrix and diagram
|
|
|
1979
|
100-101 |
5-6 |
p. 412-413
2 p.
|
artikel
|
| 114 |
Developing the sampling plans
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 115 |
Development of bulk nanostructured copper with superior hardness for use as an interconnect material in electronic packaging
|
Pan, M.Y.
|
|
2006
|
100-101 |
5-6 |
p. 763-767
5 p.
|
artikel
|
| 116 |
Developments in CMOS memory
|
Watson, David
|
|
1979
|
100-101 |
5-6 |
p. 449-452
4 p.
|
artikel
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| 117 |
Developpement d'un modele theorique d'evolution de surfaces soumises au bombardement ionique pour applications a la gravure
|
Cantagrel, M
|
|
1975
|
100-101 |
5-6 |
p. 419-424
6 p.
|
artikel
|
| 118 |
Dielectric properties of two phases of crystalline lutetium oxide
|
Delugas, Pietro
|
|
2005
|
100-101 |
5-6 |
p. 831-833
3 p.
|
artikel
|
| 119 |
Digital signal processing and LSI in modems for data transmission
|
|
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1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 120 |
Discrete probability models with modified zeros
|
|
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1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 121 |
Dissociation of GaAs and Ga0.7Al0.3As during alloying of gold contact films
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|
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1979
|
100-101 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 122 |
Distributed collaborative design of IP components in the TRMS environment
|
Siekierska, K.
|
|
2006
|
100-101 |
5-6 |
p. 1019-1024
6 p.
|
artikel
|
| 123 |
Disturbance caused in telecommunications cables by thyristor fitted locomotives
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|
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1979
|
100-101 |
5-6 |
p. 409-410
2 p.
|
artikel
|
| 124 |
Does DSA stand for better MOS?
|
|
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1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 125 |
Dosing the phosphorus in silicon and doped oxides by X-fluorescence
|
|
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1975
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 126 |
Double-step annealing and ambient effects on phosphorus implanted emitters in silicon
|
|
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1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 127 |
Dynamic environment factors in determining electronic assembly reliability
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|
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1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 128 |
Dynamic Fowler–Nordheim injection in EEPROM tunnel oxides at realistic time scales
|
Baboux, N.
|
|
2005
|
100-101 |
5-6 |
p. 911-914
4 p.
|
artikel
|
| 129 |
E-beam exposure for semiconductor device lithography
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|
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1979
|
100-101 |
5-6 |
p. 419-420
2 p.
|
artikel
|
| 130 |
Educational needs for reliability and maintainability
|
|
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1975
|
100-101 |
5-6 |
p. 403-
1 p.
|
artikel
|
| 131 |
Effect of restricted repair on system reliability indices
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|
|
1979
|
100-101 |
5-6 |
p. 414-415
2 p.
|
artikel
|
| 132 |
Effect of silicon film thickness on threshold voltage of SOS-MOSFETs
|
|
|
1979
|
100-101 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 133 |
Effect of substrate generation current on oxide I–V measurement on p-type MOS structures
|
|
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1979
|
100-101 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 134 |
Effect of substrate resistance on MOS distributed RC notch network
|
Bozic, S.M.
|
|
1975
|
100-101 |
5-6 |
p. 435-437
3 p.
|
artikel
|
| 135 |
Effect of wafer thinning methods towards fracture strength and topography of silicon die
|
Jiun, Hoh Huey
|
|
2006
|
100-101 |
5-6 |
p. 836-845
10 p.
|
artikel
|
| 136 |
Effects of band non-parabolicity on electron drift velocity in silicon above room temperature
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|
|
1975
|
100-101 |
5-6 |
p. 412-413
2 p.
|
artikel
|
| 137 |
Effects of different bonding parameters on the electrical performance and peeling strengths of ACF interconnection
|
Chen, Xu
|
|
2006
|
100-101 |
5-6 |
p. 774-785
12 p.
|
artikel
|
| 138 |
Effects of fast temperature cycling on alumium and gold metal systems
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
artikel
|
| 139 |
Effects of nitrogen annealing on electron scatterings in Si-SiO2 interface
|
|
|
1979
|
100-101 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 140 |
Effects of trichloroethane oxidation of silicon wafers on SiO2 and Si properties
|
|
|
1979
|
100-101 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 141 |
Eigenvalue approach for computing the reliability of Markov systems
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 142 |
Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition
|
Dueñas, S.
|
|
2005
|
100-101 |
5-6 |
p. 949-952
4 p.
|
artikel
|
| 143 |
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD
|
Decams, J.M.
|
|
2005
|
100-101 |
5-6 |
p. 929-932
4 p.
|
artikel
|
| 144 |
Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films
|
Wang, Ming-Tsong
|
|
2005
|
100-101 |
5-6 |
p. 969-972
4 p.
|
artikel
|
| 145 |
Electrical conduction of silicon nitride films
|
|
|
1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 146 |
Electrically erasable memory behaves like a fast nonvolatile RAM
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 147 |
Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors
|
Deloffre, E.
|
|
2005
|
100-101 |
5-6 |
p. 925-928
4 p.
|
artikel
|
| 148 |
Electrical properties of epitaxial aluminium films
|
|
|
1979
|
100-101 |
5-6 |
p. 427-428
2 p.
|
artikel
|
| 149 |
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
|
Lemberger, Martin
|
|
2005
|
100-101 |
5-6 |
p. 819-822
4 p.
|
artikel
|
| 150 |
Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric
|
Chiu, Fu-Chien
|
|
2005
|
100-101 |
5-6 |
p. 961-964
4 p.
|
artikel
|
| 151 |
Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics
|
Mikhelashvili, V.
|
|
2005
|
100-101 |
5-6 |
p. 933-936
4 p.
|
artikel
|
| 152 |
Electrical properties of RF sputtering systems
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 153 |
Electrode effects in electrical measurements in SiO thin films
|
|
|
1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 154 |
Electromigration failure in Au thin-film conductors
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|
|
1975
|
100-101 |
5-6 |
p. 404-405
2 p.
|
artikel
|
| 155 |
Electron-beam trimming of thin and thick film resistor networks
|
|
|
1975
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 156 |
Electron mobility in Si-MOSFETs with an additional implanted channel
|
|
|
1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 157 |
Empirical Bayes estimators of reliability for lognormal failure model
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 158 |
Empirical reliability models of complex structures
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 159 |
Empirical studies of software validation
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 160 |
Engineering and technological problems of the hybrid integration
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 161 |
Engineering risk reduction in satellite programs
|
|
|
1979
|
100-101 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 162 |
Enhanced solubility and ion pairing of Cu and Au in heavily doped silicon at high temperatures
|
|
|
1975
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 163 |
Enhancing MOS/LSI's role in analog design
|
|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 164 |
Epoxy bonding for integrated circuits
|
|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 165 |
ESD protection solutions for high voltage technologies
|
Keppens, Bart
|
|
2006
|
100-101 |
5-6 |
p. 677-688
12 p.
|
artikel
|
| 166 |
Estimation of periodically changing failure rate
|
|
|
1979
|
100-101 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 167 |
Estimation of reliability from multiple independent grouped censored samples with failure times known
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 168 |
Estimation of the reliability of hierarchical communication networks
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 169 |
Evaluation testing of integrated circuits
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|
|
1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
|
| 170 |
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown
|
Ribes, G.
|
|
2005
|
100-101 |
5-6 |
p. 841-844
4 p.
|
artikel
|
| 171 |
Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology
|
Capodieci, V.
|
|
2005
|
100-101 |
5-6 |
p. 937-940
4 p.
|
artikel
|
| 172 |
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides
|
Trapes, C.
|
|
2005
|
100-101 |
5-6 |
p. 883-886
4 p.
|
artikel
|
| 173 |
Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy
|
Yang, J.
|
|
2005
|
100-101 |
5-6 |
p. 887-890
4 p.
|
artikel
|
| 174 |
Experimental study on the thermo-mechanical effects of underfill and low-CTE substrate in a flip-chip device
|
Morita, Yasuyuki
|
|
2006
|
100-101 |
5-6 |
p. 923-929
7 p.
|
artikel
|
| 175 |
Fabrication of microelectronics reticles
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|
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1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 176 |
Factors affecting adhesion of lithographic materials
|
|
|
1979
|
100-101 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 177 |
Failure mechanisms in pulsed RF power transistors
|
|
|
1975
|
100-101 |
5-6 |
p. 404-
1 p.
|
artikel
|
| 178 |
Fast electrical test monitors chip-package bond quality
|
|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 179 |
Fault diagnosis in computer control systems
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|
|
1979
|
100-101 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 180 |
Fault isolation for modular electronic equipment
|
|
|
1979
|
100-101 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 181 |
Feasibility study of the application of voltage contrast to printed circuit board
|
Tan, Cher Ming
|
|
2006
|
100-101 |
5-6 |
p. 939-948
10 p.
|
artikel
|
| 182 |
Film carrier assembly process
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|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 183 |
Flatness measurements in semiconductor technology
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|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 184 |
GaAs lasers—A family of laser structures emerging for new applications
|
Kirkby, P.A.
|
|
1979
|
100-101 |
5-6 |
p. 633-644
12 p.
|
artikel
|
| 185 |
Gate oxide failures due to anomalous stress from HBM ESD testers
|
Duvvury, Charvaka
|
|
2006
|
100-101 |
5-6 |
p. 656-665
10 p.
|
artikel
|
| 186 |
4 GHz band low-noise preamplifier
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|
|
1975
|
100-101 |
5-6 |
p. 410-411
2 p.
|
artikel
|
| 187 |
Gold ion plating: A recently developed coating process
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|
|
1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 188 |
High productivity, high reliability electron beam welder
|
|
|
1979
|
100-101 |
5-6 |
p. 430-431
2 p.
|
artikel
|
| 189 |
High reliability photodiodes for space applications
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|
|
1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
|
| 190 |
High temperature reliability and interfacial reaction of eutectic Sn–0.7Cu/Ni solder joints during isothermal aging
|
Yoon, Jeong-Won
|
|
2006
|
100-101 |
5-6 |
p. 905-914
10 p.
|
artikel
|
| 191 |
Hybrid packages by the direct bonded copper process
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|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 192 |
Hybrid technology loose particles and coating materials
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|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 193 |
IC fabrication improvements combat hostile environments
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|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 194 |
IC runs complex radio
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|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 195 |
Impact of design rule reduction on size, yield, and cost of integrated circuits
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|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 196 |
Impact of interface and bulk trapped charges on transistor reliability
|
Ghidini, G.
|
|
2005
|
100-101 |
5-6 |
p. 857-860
4 p.
|
artikel
|
| 197 |
Impact of nitrogen incorporation on interface states in (100)Si/HfO2
|
Fedorenko, Y.G.
|
|
2005
|
100-101 |
5-6 |
p. 802-805
4 p.
|
artikel
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| 198 |
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development
|
Beckx, S.
|
|
2005
|
100-101 |
5-6 |
p. 1007-1011
5 p.
|
artikel
|
| 199 |
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs—Concepts, constraints and solutions
|
Thijs, S.
|
|
2006
|
100-101 |
5-6 |
p. 702-712
11 p.
|
artikel
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| 200 |
Improved charge injection in Si nanocrystal non-volatile memories
|
Carreras, Josep
|
|
2005
|
100-101 |
5-6 |
p. 899-902
4 p.
|
artikel
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| 201 |
Improvement in high-temperature degradation by isotropic conductive adhesives including Ag–Sn alloy fillers
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Yamashita, M.
|
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2006
|
100-101 |
5-6 |
p. 850-858
9 p.
|
artikel
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| 202 |
Improvement of adhesion, line definition, contact resistance and semiconductor properties by sputter-etching
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|
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1979
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100-101 |
5-6 |
p. 427-
1 p.
|
artikel
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| 203 |
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric
|
Spitale, E.
|
|
2005
|
100-101 |
5-6 |
p. 895-898
4 p.
|
artikel
|
| 204 |
Impulse-bonded wiring is economical alternative to multilayer boards
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 205 |
Impurity effects in amorphous germanium and silicon
|
|
|
1979
|
100-101 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 206 |
In-circuit tester using signature analysis adds digital LSI to its range
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 207 |
In-circuit unit does analog and digital testing
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|
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1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 208 |
Influence of interface states on the charge injection in m.n.o.s. memory devices
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1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
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| 209 |
Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics
|
Fernández, R.
|
|
2005
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100-101 |
5-6 |
p. 861-864
4 p.
|
artikel
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| 210 |
Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4 +O2
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Vamvakas, V.Em.
|
|
2005
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100-101 |
5-6 |
p. 986-989
4 p.
|
artikel
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| 211 |
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability
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Langenbuch, M.
|
|
2005
|
100-101 |
5-6 |
p. 875-878
4 p.
|
artikel
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| 212 |
Inspection and supervision of cable quality, during fabrication, using an auto-test unit TM02
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|
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1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
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| 213 |
Instrumentation for electron beam lithography
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|
|
1975
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
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| 214 |
Integrated CMOS GSM baseband channel selecting filters realized using switched capacitor finite impulse response technique
|
Dąbrowski, A.
|
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2006
|
100-101 |
5-6 |
p. 949-958
10 p.
|
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| 215 |
Interactions of industrial integration and standardization
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1979
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100-101 |
5-6 |
p. 411-
1 p.
|
artikel
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| 216 |
Interactive graphics in new product quality assurance programs
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1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
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| 217 |
Interface charge characteristics of MOS structures with different metals on steam grown oxides
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1975
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100-101 |
5-6 |
p. 412-
1 p.
|
artikel
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| 218 |
Interfacial thermal stresses in solder joints of leadless chip resistors
|
Ghorbani, H.R.
|
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2006
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100-101 |
5-6 |
p. 873-884
12 p.
|
artikel
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| 219 |
Introduction to microprocessor software development
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Hunter, J.R.W.
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1979
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100-101 |
5-6 |
p. 441-448
8 p.
|
artikel
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| 220 |
Introduction to special section on selected papers from EOS/ESD Symposium 2004
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Iyer, Natarajan Mahadeva
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2006
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100-101 |
5-6 |
p. 655-
1 p.
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artikel
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| 221 |
Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range
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Prendergast, James
|
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2005
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100-101 |
5-6 |
p. 973-977
5 p.
|
artikel
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| 222 |
Investigation of increased performance of close series stacked tube axial fans due to inclusion of diffuser element
|
Jilesen, J.
|
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2006
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100-101 |
5-6 |
p. 984-993
10 p.
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artikel
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| 223 |
Investigation of the influence of thermal treatment on interconnect-barrier interfaces in copper metallization systems
|
Aubel, Oliver
|
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2006
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100-101 |
5-6 |
p. 768-773
6 p.
|
artikel
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| 224 |
Isothermal aging effects on the microstructure and solder bump shear strength of eutectic Sn37Pb and Sn3.5Ag solders
|
Chen, W.-M.
|
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2006
|
100-101 |
5-6 |
p. 896-904
9 p.
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artikel
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| 225 |
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS
|
Barletta, Giacomo
|
|
2005
|
100-101 |
5-6 |
p. 994-999
6 p.
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artikel
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| 226 |
Life margin assessment with Physics of Failure Tools application to BGA packages
|
Foucher, B.
|
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2006
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100-101 |
5-6 |
p. 1013-1018
6 p.
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| 227 |
Light emission from Si/SiO2 superlattices fabricated by RPECVD
|
Rölver, R.
|
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2005
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100-101 |
5-6 |
p. 915-918
4 p.
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artikel
|
| 228 |
Liquid encapsulated compounding and Czochralski growth of semi-insulating gallium arsenide
|
|
|
1979
|
100-101 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 229 |
Lithography chases the incredible shrinking line
|
|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 230 |
Local-exchange renewal strategy: Maintenance man-hour requirements
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 231 |
Low frequency conductance and capacitance measurements on MOS capacitors in weak inversion
|
|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 232 |
Low-temperature vapour-phase growth of silicon dioxide
|
|
|
1979
|
100-101 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 233 |
LPCVD-silicon oxynitride films: interface properties
|
Halova, E.
|
|
2005
|
100-101 |
5-6 |
p. 982-985
4 p.
|
artikel
|
| 234 |
LSI-based data encryption discourages the data thief
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 235 |
LSI streamlines instrument interface with standard IEEE-488 bus
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 236 |
Management of satellite systems reliability program
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 237 |
Management of total reliability
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 238 |
Manual backup operations: Some behavioral aspects of human reliability
|
|
|
1979
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 239 |
Masking and duplication in the realm of 1 μm wide lines. State of the art and prospects in optics and electronics
|
|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 240 |
Materials control for the manufacture of thin-film hybrid circuits
|
|
|
1975
|
100-101 |
5-6 |
p. 413-414
2 p.
|
artikel
|
| 241 |
Mathematics of diffusion controlled precipitates with time-dependent boundary conditions
|
|
|
1975
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 242 |
Measurements and mechanisms of etchant production during the plasma oxidation of CF4 and C2F6
|
|
|
1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 243 |
Megabit bubble-memory chip gets support from LSI family
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 244 |
Megabit bubble modules move in on mass storage
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 245 |
Memory design for micros
|
Lewis, Dave
|
|
1979
|
100-101 |
5-6 |
p. 453-455
3 p.
|
artikel
|
| 246 |
Microprocessor implementation of tactical modems for data transmissions over v.h.f. radios
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 247 |
Migrated-gold resistive shorts in microcircuits
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
artikel
|
| 248 |
Migratory gold resistive shorts: chemical aspects of a failure mechanism
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
artikel
|
| 249 |
Military IC standardization, acquisition and technology
|
|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 250 |
MIL-STD-781B: Effect of a “Continue Test” decision
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 251 |
Miniature programmable transversal filter using CCD/MOS technology
|
|
|
1979
|
100-101 |
5-6 |
p. 420-421
2 p.
|
artikel
|
| 252 |
Miniaturized thick-film RC-active filters for PCM application
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 253 |
Mobile ion instability in SiO2 films on silicon
|
|
|
1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 254 |
Model band structure of reconstructed (111) 2×1 surface of silicon
|
|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 255 |
Modelling I2L/MTL cells
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 256 |
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance
|
Lujan, G.S.
|
|
2005
|
100-101 |
5-6 |
p. 794-797
4 p.
|
artikel
|
| 257 |
Modelling transient faults in TMR computer systems
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 258 |
Model of gas phase etching of silicon with HCl
|
|
|
1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 259 |
Modularity is not a matter of size
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 260 |
Monolithic approach bears fruit in data conversion
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 261 |
MOS semiconductor random access memory failure rate
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 262 |
Multiband and multivalley effective-mass theory for impurities in semiconductors
|
|
|
1979
|
100-101 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 263 |
Multichip integrated circuit memory with photoformed plated conductors
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 264 |
Multiobjective optimization by the Surrogate Worth Trade-off method
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 265 |
Multiple insulator layers on GaAs studied by auger analysis
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 266 |
Nano-mechanical electro-thermal probe array used for high-density storage based on NEMS technology
|
Yang, Zunxian
|
|
2006
|
100-101 |
5-6 |
p. 805-810
6 p.
|
artikel
|
| 267 |
New crossovers using a combined film technique
|
|
|
1979
|
100-101 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 268 |
New developments in thick film conductors
|
|
|
1979
|
100-101 |
5-6 |
p. 429-430
2 p.
|
artikel
|
| 269 |
New insights into board level drop impact
|
Wong, E.H.
|
|
2006
|
100-101 |
5-6 |
p. 930-938
9 p.
|
artikel
|
| 270 |
New method for the electronic structure of heterojunctions—Application to the (100) Ge-GaAs interfaces
|
|
|
1979
|
100-101 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 271 |
New optoelectronic devices and their applications
|
de Vooght, Michel
|
|
1979
|
100-101 |
5-6 |
p. 611-622
12 p.
|
artikel
|
| 272 |
Noise immunity of CMOS integrated circuits
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 273 |
[No title]
|
Stojcev, Mile
|
|
2005
|
100-101 |
5-6 |
p. 1017-1018
2 p.
|
artikel
|
| 274 |
[No title]
|
Stojcev, Mile
|
|
2005
|
100-101 |
5-6 |
p. 1019-1020
2 p.
|
artikel
|
| 275 |
[No title]
|
Hurley, Paul
|
|
2005
|
100-101 |
5-6 |
p. 767-769
3 p.
|
artikel
|
| 276 |
[No title]
|
Stojcev, Mile
|
|
2005
|
100-101 |
5-6 |
p. 1012-1013
2 p.
|
artikel
|
| 277 |
[No title]
|
Stojcev, Mile
|
|
2005
|
100-101 |
5-6 |
p. 1014-1016
3 p.
|
artikel
|
| 278 |
[No title]
|
Stojcev, Mile
|
|
2006
|
100-101 |
5-6 |
p. 1025-1026
2 p.
|
artikel
|
| 279 |
Observation and characterization of defects in HfO2 high-K gate dielectric layers
|
Kaushik, Vidya
|
|
2005
|
100-101 |
5-6 |
p. 798-801
4 p.
|
artikel
|
| 280 |
OEM control systems
|
Hodge, Peter H.
|
|
1979
|
100-101 |
5-6 |
p. 535-540
6 p.
|
artikel
|
| 281 |
On chemical cleaning for thermocompression bonding
|
|
|
1975
|
100-101 |
5-6 |
p. 409-410
2 p.
|
artikel
|
| 282 |
On computer-oriented design of microstrip amplifiers with component tolerance assignment
|
|
|
1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
|
| 283 |
On fault trees and other reliability evaluation methods
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 284 |
On solution schemes for time-independent thermomechanical analysis for structures containing polymeric materials
|
Lai, Yi-Shao
|
|
2006
|
100-101 |
5-6 |
p. 859-863
5 p.
|
artikel
|
| 285 |
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers
|
Pétry, J.
|
|
2005
|
100-101 |
5-6 |
p. 815-818
4 p.
|
artikel
|
| 286 |
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiN x /SiO2/Si fabricated by ECR-CVD
|
Dueñas, S.
|
|
2005
|
100-101 |
5-6 |
p. 978-981
4 p.
|
artikel
|
| 287 |
On the propagation of impulses in thin film distributed parameter networks
|
|
|
1975
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 288 |
On the SILC mechanism in MOSFET’s with ultrathin oxides
|
Bauza, D.
|
|
2005
|
100-101 |
5-6 |
p. 849-852
4 p.
|
artikel
|
| 289 |
On the surface recombination effect on some properties of semiconductor devices—Dynamic relationships
|
|
|
1979
|
100-101 |
5-6 |
p. 424-425
2 p.
|
artikel
|
| 290 |
On the temperature dependence of subthreshold currents in MOS electron inversion layers
|
|
|
1979
|
100-101 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 291 |
Operation and Characterization of Micronic and Submicronic MESFETs
|
|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 292 |
Optical and electrical characterization of hafnium oxide deposited by MOCVD
|
Lu, Y.
|
|
2005
|
100-101 |
5-6 |
p. 965-968
4 p.
|
artikel
|
| 293 |
Optimal allocation of fault detectors
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 294 |
Optimal replacement and build policies
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 295 |
Optimization of low temperature silicon nitride processes for improvement of device performance
|
Sleeckx, E.
|
|
2005
|
100-101 |
5-6 |
p. 865-868
4 p.
|
artikel
|
| 296 |
Packages and film resistors for hybrid microcircuits
|
|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 297 |
Parallel processing with minicomputers increases performance, availability
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 298 |
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors
|
Schram, T.
|
|
2005
|
100-101 |
5-6 |
p. 779-782
4 p.
|
artikel
|
| 299 |
Photochemical decomposition mechanisms for AZ-type photoresists
|
|
|
1979
|
100-101 |
5-6 |
p. 418-419
2 p.
|
artikel
|
| 300 |
Physical and thermodynamic properties of silicon tetrachloride
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 301 |
Physical fundamentals of external transient latch-up and corrective actions
|
Domański, K.
|
|
2006
|
100-101 |
5-6 |
p. 689-701
13 p.
|
artikel
|
| 302 |
Physical limits in digital electronics
|
|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 303 |
Planar InSb photodiodes fabricated by Be and Mg ion implantation
|
|
|
1975
|
100-101 |
5-6 |
p. 414-415
2 p.
|
artikel
|
| 304 |
Plasma etch monitoring with laser interferometry
|
|
|
1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 305 |
Porcelain-on-steel boards can launch a thousand chips
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 306 |
Post deposition UV-induced O2 annealing of HfO2 thin films
|
Fang, Q.
|
|
2005
|
100-101 |
5-6 |
p. 957-960
4 p.
|
artikel
|
| 307 |
Potential remedies for the V T/V fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey
|
Deweerd, W.
|
|
2005
|
100-101 |
5-6 |
p. 786-789
4 p.
|
artikel
|
| 308 |
Power supplies for C-MOS
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 309 |
Practical components for fibre optic data transmission
|
Watts, J.K.
|
|
1979
|
100-101 |
5-6 |
p. 623-632
10 p.
|
artikel
|
| 310 |
Practical uses of accelerated testing at Motorola
|
|
|
1975
|
100-101 |
5-6 |
p. 404-
1 p.
|
artikel
|
| 311 |
Predicting the Reliability of Systems Using Complex MOS/LSI Devices in Automotive Application
|
|
|
1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 312 |
Prediction of software reliability during debugging
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 313 |
Printed Circuit Troubleshooting
|
G.W.A.D.,
|
|
1975
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 314 |
Probing stress effects in HfO2 gate stacks with time dependent measurements
|
Young, Chadwin D.
|
|
2005
|
100-101 |
5-6 |
p. 806-810
5 p.
|
artikel
|
| 315 |
Problems in the production and measurement of very high vacuum, especially in applications, and a new approach to measurement based on the use of field emission
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 316 |
Problems of the application of microprocessors
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 317 |
Process control by means of accelerated testing
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 318 |
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics
|
Schwalke, Udo
|
|
2005
|
100-101 |
5-6 |
p. 790-793
4 p.
|
artikel
|
| 319 |
Product reliability due to random load variations at elevated temperatures
|
|
|
1979
|
100-101 |
5-6 |
p. 416-417
2 p.
|
artikel
|
| 320 |
Products liability in Europe: Proposed reforms: The Council of Europe Convention and the draft directive of the European Economic Community
|
|
|
1979
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 321 |
Products liability in the United Kingdom: The current situation
|
|
|
1979
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 322 |
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance
|
O’Connor, Robert
|
|
2005
|
100-101 |
5-6 |
p. 869-874
6 p.
|
artikel
|
| 323 |
Properties of zirconium nitride film resistors deposited by reactive RF sputtering
|
|
|
1975
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 324 |
Publications, notices, calls for papers, etc.
|
|
|
1975
|
100-101 |
5-6 |
p. 401-402
2 p.
|
artikel
|
| 325 |
Pulsed electron-beam processing of semiconductor devices
|
|
|
1979
|
100-101 |
5-6 |
p. 431-
1 p.
|
artikel
|
| 326 |
Quality improvement through defect source analysis
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 327 |
Radiation levels associated with the electron-beam metallization process
|
|
|
1979
|
100-101 |
5-6 |
p. 431-
1 p.
|
artikel
|
| 328 |
Rapid RMA assessment—The painless plot
|
|
|
1979
|
100-101 |
5-6 |
p. 422-423
2 p.
|
artikel
|
| 329 |
RC-active filters in single-layer tantalum RC-film technology
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 330 |
Reappraising CCD memories: can they stand up to RAMs?
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 331 |
Recent developments in gold conductor bonding performance and failure mechanisms
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 332 |
Recent innovations in semiconductor materials
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 333 |
Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus
|
|
|
1979
|
100-101 |
5-6 |
p. 426-427
2 p.
|
artikel
|
| 334 |
Reliability and flow graphs
|
Råde, L.
|
|
1975
|
100-101 |
5-6 |
p. 447-450
4 p.
|
artikel
|
| 335 |
Reliability and maintainability growth of a modern, high performance aircraft, the F-14A
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 336 |
Reliability and performance limitations in SiC power devices
|
Singh, Ranbir
|
|
2006
|
100-101 |
5-6 |
p. 713-730
18 p.
|
artikel
|
| 337 |
Reliability assessment of small signal GaAs FETS
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 338 |
Reliability based quality (RBQ) technique for evaluating the degradation of reliability during manufacturing
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 339 |
Reliability case history of an airborne air data computer
|
|
|
1975
|
100-101 |
5-6 |
p. 406-407
2 p.
|
artikel
|
| 340 |
Reliability demonstration: purposes, practices and value
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 341 |
Reliability evaluation. A comparative study of different techniques
|
|
|
1975
|
100-101 |
5-6 |
p. 403-
1 p.
|
artikel
|
| 342 |
Reliability evaluation of hermetic integrated circuit chips in plastic packages
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
artikel
|
| 343 |
Reliability growth of electronic equipment
|
Mead, P.H.
|
|
1975
|
100-101 |
5-6 |
p. 439-443
5 p.
|
artikel
|
| 344 |
Reliability Improvements
|
|
|
1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 345 |
Reliability learning model: Application to color TV
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 346 |
Reliability of a 2-Unit standby redundant system with repair, maintenance and standby failure
|
|
|
1975
|
100-101 |
5-6 |
p. 408-
1 p.
|
artikel
|
| 347 |
Reliability of gate dielectrics and metal–insulator–metal capacitors
|
Martin, Andreas
|
|
2005
|
100-101 |
5-6 |
p. 834-840
7 p.
|
artikel
|
| 348 |
Reliability of interconnections on microcircuits
|
|
|
1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
|
| 349 |
Reliability of microwave gallium arsenide field effect transistors
|
|
|
1975
|
100-101 |
5-6 |
p. 404-
1 p.
|
artikel
|
| 350 |
Reliability optimization in the design of telephone networks
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 351 |
Reliability studies at Carleton University
|
|
|
1975
|
100-101 |
5-6 |
p. 403-
1 p.
|
artikel
|
| 352 |
Reliability study of microwave transistors
|
|
|
1975
|
100-101 |
5-6 |
p. 404-
1 p.
|
artikel
|
| 353 |
Repairs to complex hybrid circuits—their effect on reliability
|
|
|
1975
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 354 |
Resist materials for fine line lithography
|
|
|
1979
|
100-101 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 355 |
Resolution improvement of acoustic microimaging by continuous wavelet transform for semiconductor inspection
|
Zhang, Guang-Ming
|
|
2006
|
100-101 |
5-6 |
p. 811-821
11 p.
|
artikel
|
| 356 |
Results of a 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, part 2 survey of dominant IC failure mechanisms and analysis of failure causes
|
kemény, A.P.
|
|
1975
|
100-101 |
5-6 |
p. 499-500
2 p.
|
artikel
|
| 357 |
Results of A 160 × 106 device-hour reliability assessment and failure analysis of TTL SSI integrated circuits, part 1 test results and electrical failure analysis
|
Kemény, A.P.
|
|
1975
|
100-101 |
5-6 |
p. 469-470
2 p.
|
artikel
|
| 358 |
Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitors
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 359 |
Reverse bias stresses on emitter-base junctions
|
|
|
1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
|
| 360 |
Reverse short channel effects in high-k gated nMOSFETs
|
Han, J.-P.
|
|
2005
|
100-101 |
5-6 |
p. 783-785
3 p.
|
artikel
|
| 361 |
Scanned surface photovoltage detection of defects in silicon wafers
|
|
|
1975
|
100-101 |
5-6 |
p. 404-
1 p.
|
artikel
|
| 362 |
Screen printable inks in hybrid microelectronics: availability and physical properties
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 363 |
Screen printable inks in hybrid microelectronics: materials and their behaviour
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 364 |
Screen printing inks for high resolution rheology and printing
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 365 |
Self-consistent pseudopotential calculations of the equilibrium properties of bulk and surface Si
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 366 |
Selling reliability engineering to the company
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 367 |
Separation of surface and bulk gases in contact materials of vacuum switches—Determination of gases and effect on vacuum breakdown
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 368 |
Sequencing of diagnostic tests for fault isolation by dynamic programming
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 369 |
Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing
|
Pecora, A.
|
|
2005
|
100-101 |
5-6 |
p. 879-882
4 p.
|
artikel
|
| 370 |
Silicon wafer damage—Two useful investigation techniques
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 371 |
Single-chip microcomputers with 1 million bits of information, English-language programming, and canned software are seen ahead
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 372 |
Slow states in InSb/SiOx thin film transistors
|
|
|
1975
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 373 |
Small field effect transistors. Research on the normally-off channel type
|
|
|
1975
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 374 |
Software packages
|
Healey, Martin
|
|
1979
|
100-101 |
5-6 |
p. 549-554
6 p.
|
artikel
|
| 375 |
Solder bump interconnected, multiple chip, thick film hybrid for 40-character alphanumeric LCD application
|
|
|
1979
|
100-101 |
5-6 |
p. 429-
1 p.
|
artikel
|
| 376 |
Solubility of gold in p-type silicon
|
|
|
1975
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 377 |
Some applications of molecular electronics
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 378 |
Some approaches to Bayesian reliability demonstration
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 379 |
Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds
|
|
|
1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 380 |
Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds
|
|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 381 |
Some design aspects of m.o.s.l.s.i. operational amplifiers
|
|
|
1979
|
100-101 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 382 |
Some recents advances in integrated crystal filters
|
|
|
1979
|
100-101 |
5-6 |
p. 420-
1 p.
|
artikel
|
| 383 |
Some reliability aspects of carbon film resistors
|
|
|
1975
|
100-101 |
5-6 |
p. 405-406
2 p.
|
artikel
|
| 384 |
SOS island edge profiles following oxidation
|
|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 385 |
Special report: C-MOS enlarges its territory
|
|
|
1975
|
100-101 |
5-6 |
p. 409-
1 p.
|
artikel
|
| 386 |
Special seminex 1979 edition semiconductors and microprocessors
|
Dummer, G.W.A.
|
|
1979
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 387 |
Specification of an automatic test system vs an optimum maintenance policy and equipment reliability
|
|
|
1979
|
100-101 |
5-6 |
p. 416-
1 p.
|
artikel
|
| 388 |
Specifications and reliability
|
Thompson, P.M.
|
|
1975
|
100-101 |
5-6 |
p. 527-528
2 p.
|
artikel
|
| 389 |
Spectroscopic determination of the energy gaps in the inversion layer band structure on vicinal planes of Si (001)
|
|
|
1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 390 |
Sputtering process model of deposition rate
|
|
|
1979
|
100-101 |
5-6 |
p. 428-
1 p.
|
artikel
|
| 391 |
Statistical analysis of tin whisker growth
|
Fang, Tong
|
|
2006
|
100-101 |
5-6 |
p. 846-849
4 p.
|
artikel
|
| 392 |
Stochastic behavior of some 2-unit redundant systems
|
|
|
1979
|
100-101 |
5-6 |
p. 412-
1 p.
|
artikel
|
| 393 |
Stochastic behavior of two-unit paralleled redundant systems with repair maintenance
|
Nakagawa, Toshio
|
|
1975
|
100-101 |
5-6 |
p. 457-461
5 p.
|
artikel
|
| 394 |
Stochastic behaviour of a two-unit priority standby redundant system with repair
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 395 |
Stress analysis and bending tests for GaAs wafers
|
Dreyer, W.
|
|
2006
|
100-101 |
5-6 |
p. 822-835
14 p.
|
artikel
|
| 396 |
Structure of the oxide damage under progressive breakdown
|
Palumbo, F.
|
|
2005
|
100-101 |
5-6 |
p. 845-848
4 p.
|
artikel
|
| 397 |
Study of CDM specific effects for a smart power input protection structure
|
Etherton, M.
|
|
2006
|
100-101 |
5-6 |
p. 666-676
11 p.
|
artikel
|
| 398 |
Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF
|
Maanane, H.
|
|
2006
|
100-101 |
5-6 |
p. 994-1000
7 p.
|
artikel
|
| 399 |
Study of the power capability of LDMOS and the improved methods
|
Sun, Zhilin
|
|
2006
|
100-101 |
5-6 |
p. 1001-1005
5 p.
|
artikel
|
| 400 |
Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
|
|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 401 |
Susceptibility of microwelds in hybrid microcircuits to corrosion degradation
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
artikel
|
| 402 |
Tailoring RAM to meet the user's need
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 403 |
Technical and practical considerations of incorporating microprocessors in OEM products—A management view
|
Sambell, S.
|
|
1979
|
100-101 |
5-6 |
p. 523-533
11 p.
|
artikel
|
| 404 |
Temperature dependent threshold behavior of depletion mode MOSFETs—Characterization and simulation
|
|
|
1979
|
100-101 |
5-6 |
p. 424-
1 p.
|
artikel
|
| 405 |
Testability analysis: Predict it more closely
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 406 |
Testing of the layout of integrated solid-state circuits, in particular of bipolar ones
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 407 |
The 8086—An advanced 16-bit microcomputer
|
Kornstein, Howard
|
|
1979
|
100-101 |
5-6 |
p. 591-597
7 p.
|
artikel
|
| 408 |
The application of low cost microprocessors in keyboard design
|
Lowe, John M.
|
|
1979
|
100-101 |
5-6 |
p. 563-569
7 p.
|
artikel
|
| 409 |
The Burr distribution as a failure model from a Bayesian approach
|
|
|
1979
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 410 |
The Canadian Nuclear Association. R. & M. Standard
|
|
|
1975
|
100-101 |
5-6 |
p. 403-404
2 p.
|
artikel
|
| 411 |
The corrosive activity of fluxes
|
|
|
1975
|
100-101 |
5-6 |
p. 406-
1 p.
|
artikel
|
| 412 |
The effect of die attach voiding on the thermal resistance of chip level packages
|
Fleischer, Amy S.
|
|
2006
|
100-101 |
5-6 |
p. 794-804
11 p.
|
artikel
|
| 413 |
The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors
|
Juan, P.C.
|
|
2005
|
100-101 |
5-6 |
p. 1003-1006
4 p.
|
artikel
|
| 414 |
The effect of heat treatment on unpassivated and passivated gallium arsenide surfaces
|
|
|
1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 415 |
The effects of SO2 and H2S atmospheres on thick film resistors
|
Coleman, M.V.
|
|
1975
|
100-101 |
5-6 |
p. 445-446
2 p.
|
artikel
|
| 416 |
The expanding role of CMOS in digital L.S.I.
|
Watson, David
|
|
1979
|
100-101 |
5-6 |
p. 473-478
6 p.
|
artikel
|
| 417 |
The F-16 RIW program
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 418 |
The fundamental limitations of digital semiconductor technology
|
|
|
1979
|
100-101 |
5-6 |
p. 417-
1 p.
|
artikel
|
| 419 |
The graphical reliability evaluation of three-state device networks
|
|
|
1975
|
100-101 |
5-6 |
p. 404-
1 p.
|
artikel
|
| 420 |
The influence of gold when present at a silicon/silicon dioxide interface
|
|
|
1979
|
100-101 |
5-6 |
p. 425-
1 p.
|
artikel
|
| 421 |
The limitations of reactively-bonded thick film gold conductors
|
|
|
1979
|
100-101 |
5-6 |
p. 427-
1 p.
|
artikel
|
| 422 |
The logistics of life cycle cost
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 423 |
The microcircuit pacemaker. Space age spin-off to achieve reliability and long life
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 424 |
The need for feedback of field RAM data
|
|
|
1979
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 425 |
The NOVRAM—A new concept in electrically alterable memories
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 426 |
The numerical analysis of anomalous doping profiles of phosphorus in silicon
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 427 |
The operational impact of Navy's first TAAF program
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 428 |
Theoretical influence of surface states and bulk traps on thin film transistor characteristics
|
|
|
1975
|
100-101 |
5-6 |
p. 414-
1 p.
|
artikel
|
| 429 |
The race heats up in fast static RAMs
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 430 |
The recognition of latent defects in electronic circuits by measuring phase noise
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 431 |
Thermal stress in bonded joints
|
|
|
1979
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 432 |
The set approach to determine the frequency of system failure
|
|
|
1975
|
100-101 |
5-6 |
p. 407-
1 p.
|
artikel
|
| 433 |
The S9900—Mini on a chip?
|
Walsh, M.J.
|
|
1979
|
100-101 |
5-6 |
p. 579-590
12 p.
|
artikel
|
| 434 |
The software development notebook—A proven technique
|
|
|
1979
|
100-101 |
5-6 |
p. 415-
1 p.
|
artikel
|
| 435 |
The squeegee in printing of electronic circuits
|
Dubey, G.C.
|
|
1975
|
100-101 |
5-6 |
p. 427-429
3 p.
|
artikel
|
| 436 |
Thick film technology
|
|
|
1979
|
100-101 |
5-6 |
p. 430-
1 p.
|
artikel
|
| 437 |
Title section, volume contents and author index for volume 19, 1979
|
|
|
1979
|
100-101 |
5-6 |
p. i-vi
nvt p.
|
artikel
|
| 438 |
Tools for building microprocessor software systems
|
Baker, Keith D.
|
|
1979
|
100-101 |
5-6 |
p. 555-562
8 p.
|
artikel
|
| 439 |
Top-end microprocessors—Introductory review
|
Cooke, P.
|
|
1979
|
100-101 |
5-6 |
p. 571-573
3 p.
|
artikel
|
| 440 |
Transient fracturing of solder joints subjected to displacement-controlled impact loads
|
Yeh, Chang-Lin
|
|
2006
|
100-101 |
5-6 |
p. 885-895
11 p.
|
artikel
|
| 441 |
Transistor structure relation to secondary breakdown and its effects
|
Aharoni, H.
|
|
1975
|
100-101 |
5-6 |
p. 451-452
2 p.
|
artikel
|
| 442 |
Transition metal deep centers in GaAs, GaP and Si
|
|
|
1979
|
100-101 |
5-6 |
p. 425-426
2 p.
|
artikel
|
| 443 |
Transport properties of doped amorphous silicon
|
|
|
1979
|
100-101 |
5-6 |
p. 426-
1 p.
|
artikel
|
| 444 |
Trimming of thin and thick film resistors
|
|
|
1979
|
100-101 |
5-6 |
p. 428-429
2 p.
|
artikel
|
| 445 |
“Troubleshooting” color TV. More smoke than fire may emanate from widely publicized consumer surveys and hazard data
|
|
|
1975
|
100-101 |
5-6 |
p. 408-409
2 p.
|
artikel
|
| 446 |
Tunnel injection into gate oxide traps
|
|
|
1975
|
100-101 |
5-6 |
p. 413-
1 p.
|
artikel
|
| 447 |
Two dimensional electron GaAs at a semiconductor-semiconductor interface
|
|
|
1979
|
100-101 |
5-6 |
p. 423-
1 p.
|
artikel
|
| 448 |
Two-dimensional position-sensitive photodetector with high linearity made with standard i.c.-technology
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 449 |
Two instrument ICs sum six inputs
|
|
|
1975
|
100-101 |
5-6 |
p. 411-
1 p.
|
artikel
|
| 450 |
Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria
|
Sánchez, F.J. Garcı́a
|
|
2006
|
100-101 |
5-6 |
p. 731-742
12 p.
|
artikel
|
| 451 |
Universal logic gates for custom-design I.C. requirements
|
Hurst, S.L.
|
|
1979
|
100-101 |
5-6 |
p. 457-461
5 p.
|
artikel
|
| 452 |
Vapour pressure measurement of low volatility precursors
|
Rushworth, S.A.
|
|
2005
|
100-101 |
5-6 |
p. 1000-1002
3 p.
|
artikel
|
| 453 |
Vertically high-density interconnection for mobile application
|
Katahira, Takayoshi
|
|
2006
|
100-101 |
5-6 |
p. 756-762
7 p.
|
artikel
|
| 454 |
VLSI and other solid-state devices. New fabrication technologies put us on the threshold of a quantum jump in IC complexity
|
|
|
1979
|
100-101 |
5-6 |
p. 418-
1 p.
|
artikel
|
| 455 |
VLSI shakes the foundations of computer architecture
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 456 |
V-MOS packs 16 kilobits into static random-access memory
|
|
|
1979
|
100-101 |
5-6 |
p. 422-
1 p.
|
artikel
|
| 457 |
Wafer flatness: An overview of measurement considerations and equipment correlation
|
|
|
1979
|
100-101 |
5-6 |
p. 419-
1 p.
|
artikel
|
| 458 |
Warranties—The easy way out
|
|
|
1979
|
100-101 |
5-6 |
p. 410-
1 p.
|
artikel
|
| 459 |
What to look for in logic timing analyzers
|
|
|
1979
|
100-101 |
5-6 |
p. 421-
1 p.
|
artikel
|
| 460 |
Width dependence of electromigration life in Al-Cu, Al-Cu-Si and Ag conductors
|
|
|
1975
|
100-101 |
5-6 |
p. 405-
1 p.
|
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X-ray diffraction stress measurements in thin films
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1975
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100-101 |
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Yield-area analysis: Part II—Effects of photomask alignment errors on zero yield loci
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1979
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