Digitale Bibliotheek
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                             276 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accelerated assessment of fine-grain AVF in NoC using a Multi-Cell Upsets considered fault injection Jiao, Jiajia
2014
100-101 11 p. 2629-2640
12 p.
artikel
2 A closed queuing maintenance network for a flexible manufacturing system Lin, Chinho
1994
100-101 11 p. 1733-1744
12 p.
artikel
3 A complementarity of the 1 f noise and the charge-pumping methods for determination of the degradation of the small size MOS transistors Grabowski, Franciszek
1992
100-101 11 p. 1621-1626
6 p.
artikel
4 Adaptive reliability satisfaction in wireless sensor networks through controlling the number of active routing paths Alirezaeyan, Javad
2015
100-101 11 p. 2412-2422
11 p.
artikel
5 Adaptive static and dynamic noise margin improvement in minimum-sized 6T-SRAM cells Alorda, Bartomeu
2014
100-101 11 p. 2613-2620
8 p.
artikel
6 Adhesion energy of printed circuit board materials using four-point-bending validated with finite element simulations Schöngrundner, R.
2015
100-101 11 p. 2382-2390
9 p.
artikel
7 Advanced 2D/3D ESD device simulation – a powerful tool already used in a pre-Si phase Esmark, K
2001
100-101 11 p. 1761-1770
10 p.
artikel
8 A gas micropreconcentrator for low level acetone measurements Rydosz, A.
2012
100-101 11 p. 2640-2646
7 p.
artikel
9 A general model of 1/f γ noise Pellegrini, Bruno
2000
100-101 11 p. 1775-1780
6 p.
artikel
10 Aging characteristics of ZnO–PrO1.83-based semiconducting varistors for surge protection reliability Nahm, Choon-W.
2014
100-101 11 p. 2417-2422
6 p.
artikel
11 A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate Chiu, Hsien-Chin
2012
100-101 11 p. 2556-2560
5 p.
artikel
12 A method of thermal testing of microsystems Bratek, Piotr
2001
100-101 11 p. 1877-1887
11 p.
artikel
13 An adaptive Cu trace fatigue model based on average cross-section strain Farley, D.
2012
100-101 11 p. 2763-2772
10 p.
artikel
14 An advanced MESFET burn-in method and equipment Kovács, B.
1992
100-101 11 p. 1585-1588
4 p.
artikel
15 An algorithm for generation of redundant reliability graphs Aziz, M.A.
1994
100-101 11 p. 1843-1846
4 p.
artikel
16 Analysis of Cu-wire pull and shear test failure modes under ageing cycles and finite element modelling of Si-crack propagation Mazzei, S.
2014
100-101 11 p. 2501-2512
12 p.
artikel
17 An approach to cost analysis of the machine repair problem with two types of spares and service rates Wang, Kuo-Hsiung
1995
100-101 11 p. 1433-1436
4 p.
artikel
18 An assessment of the value of added screening of electronic components for commercial aerospace applications Hester, Kendall D
2001
100-101 11 p. 1823-1828
6 p.
artikel
19 An attempt to explain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures Salome, P.
1998
100-101 11 p. 1763-1772
10 p.
artikel
20 An efficient adaptive software-implemented technique to detect control-flow errors in multi-core architectures Maghsoudloo, Mohammad
2012
100-101 11 p. 2812-2828
17 p.
artikel
21 An evaluation of fast wafer level test methods for interconnect reliability control Foley, S
1999
100-101 11 p. 1707-1714
8 p.
artikel
22 A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V g=V d Mu, Fuchen
2001
100-101 11 p. 1909-1913
5 p.
artikel
23 An improved estimator for population proportion using inverse sampling Khare, B.B.
1994
100-101 11 p. 1807-1810
4 p.
artikel
24 An infrastructure for debug using clusters of assertion-checkers Neishaburi, M.H.
2012
100-101 11 p. 2781-2798
18 p.
artikel
25 A novel co-design and evaluation methodology for ESD protection in RFIC Li, Li
2012
100-101 11 p. 2632-2639
8 p.
artikel
26 A physical model and analysis for whisker growth caused by chemical intermetallic reaction Qiang, Lei
2014
100-101 11 p. 2494-2500
7 p.
artikel
27 Approach to the analysis of gate oxide shorts in CMOS digital circuits Segura, Jaume A.
1992
100-101 11 p. 1509-1514
6 p.
artikel
28 A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off Sundaramoorthy, V.K.
2014
100-101 11 p. 2423-2431
9 p.
artikel
29 A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases Qian, L.X.
2014
100-101 11 p. 2396-2400
5 p.
artikel
30 A time dependent damage indicator model for Sn3.5Ag solder layer in power electronic module Rajaguru, Pushparajah
2015
100-101 11 p. 2371-2381
11 p.
artikel
31 Availability analysis of a repairable standby human-machine system Yang, Nianfu
1995
100-101 11 p. 1401-1413
13 p.
artikel
32 Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs) Chen, Qianwen
2012
100-101 11 p. 2670-2676
7 p.
artikel
33 Bimodal and monomodal diamond particle effect on the thermal properties of diamond-particle-dispersed Al–matrix composite fabricated by SPS Mizuuchi, Kiyoshi
2014
100-101 11 p. 2463-2470
8 p.
artikel
34 Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain Wolf, Heinrich
1999
100-101 11 p. 1541-1549
9 p.
artikel
35 Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions Wu, J
2001
100-101 11 p. 1771-1779
9 p.
artikel
36 Cause-effect failure analysis for measure channels with computer process units Roca, J.L.
1994
100-101 11 p. 1811-1819
9 p.
artikel
37 Cell array reconfigurable architecture for high-efficiency AES system Li, Hongge
2012
100-101 11 p. 2829-2836
8 p.
artikel
38 Characterising Arrhenius moisture diffusivity constants using non-isothermal sorption Wong, E.H.
2015
100-101 11 p. 2331-2335
5 p.
artikel
39 Characterization and optimization of a bipolar ESD-device by measurements and simulations Stricker, Andreas D.
1999
100-101 11 p. 1563-1577
15 p.
artikel
40 Characterization of generation–recombination noise using a physics-based device noise simulator Hou, Fan-Chi
2000
100-101 11 p. 1883-1886
4 p.
artikel
41 Characterization of oxide traps in 0.15 μm2 MOSFETs using random telegraph signals Amarasinghe, Nuditha Vibhavie
2000
100-101 11 p. 1875-1881
7 p.
artikel
42 Charge-trapping characteristics of BaTiO3 with and without nitridation for nonvolatile memory applications Huang, X.D.
2014
100-101 11 p. 2388-2391
4 p.
artikel
43 Circuit design and experimental test of a high power IGBT non-destructive tester Ahmed, Ashraf
2012
100-101 11 p. 2609-2616
8 p.
artikel
44 Circuit simulation of workload-dependent RTN and BTI based on trap kinetics Camargo, V.V.A.
2014
100-101 11 p. 2364-2370
7 p.
artikel
45 Comet — A new method for the deterministic test pattern generation in c-circuits Dokouzyannis, Stavros P
1994
100-101 11 p. 1761-1775
15 p.
artikel
46 Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life Fonder, J.-B.
2012
100-101 11 p. 2561-2567
7 p.
artikel
47 Comparison of experimental methods for the extraction of the elastic modulus of molding compounds used in IC packaging Ivankovic, Andrej
2012
100-101 11 p. 2677-2684
8 p.
artikel
48 Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT Delseny, C
2000
100-101 11 p. 1869-1874
6 p.
artikel
49 Comparison of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si with respect to thermal stability and diffusion behavior of Ti Fugger, M.
2014
100-101 11 p. 2487-2493
7 p.
artikel
50 Confidence limits for steady state availability of a parallel system Chandrasekhar, P.
1994
100-101 11 p. 1847-1851
5 p.
artikel
51 Continuous improvement factor, CIF—A new, basic statistic Anjard, Ronald P.
1995
100-101 11 p. 1443-1444
2 p.
artikel
52 Copper metallization reliability Lloyd, J.R
1999
100-101 11 p. 1595-1602
8 p.
artikel
53 Coupling effects of mechanical vibrations and thermal cycling on reliability of CCGA solder joints Ding, Ying
2015
100-101 11 p. 2396-2402
7 p.
artikel
54 Critical areas for finite length conductors Corsi, F.
1992
100-101 11 p. 1539-1544
6 p.
artikel
55 Crossbar array of selector-less TaO x /TiO2 bilayer RRAM Chou, Chun-Tse
2015
100-101 11 p. 2220-2223
4 p.
artikel
56 Cross-layer custom instruction selection to address PVTA variations and soft error Farahani, Bahar
2015
100-101 11 p. 2423-2438
16 p.
artikel
57 Cu–Al intermetallic compound investigation using ex-situ post annealing and in-situ annealing Tan, Y.Y.
2015
100-101 11 p. 2316-2323
8 p.
artikel
58 Current crowding and its effect on 1/f noise and third harmonic distortion – a case study for quality assessment of resistors Vandamme, E.P.
2000
100-101 11 p. 1847-1853
7 p.
artikel
59 Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors Sandén, Martin
2000
100-101 11 p. 1863-1867
5 p.
artikel
60 Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body Ohata, A.
2012
100-101 11 p. 2602-2608
7 p.
artikel
61 Defect and microstructural evolution in thermally cycled Cu through-silicon vias Marro, James
2014
100-101 11 p. 2586-2593
8 p.
artikel
62 Delay and crosstalk reliability issues in mixed MWCNT bundle interconnects Majumder, Manoj Kumar
2014
100-101 11 p. 2570-2577
8 p.
artikel
63 Dependence of Hooge parameter of InAs heterostructure on temperature Tacano, M
2000
100-101 11 p. 1921-1924
4 p.
artikel
64 Design and characterization of ESD solutions with EMC robustness for automotive applications Xi, Yunfeng
2015
100-101 11 p. 2236-2246
11 p.
artikel
65 Designing power supply clamps for electrostatic discharge protection of integrated circuits Maloney, T.J.
1998
100-101 11 p. 1691-1703
13 p.
artikel
66 Design of vertical fin arrays with heat pipes used for high-power light-emitting diodes Ye, Huaiyu
2014
100-101 11 p. 2448-2455
8 p.
artikel
67 Design optimization of RF-MEMS switch considering thermally induced residual stress and process uncertainties Saleem, Muhammad Mubasher
2015
100-101 11 p. 2284-2298
15 p.
artikel
68 Design space exploration of non-uniform cache access for soft-error vulnerability mitigation Maghsoudloo, Mohammad
2015
100-101 11 p. 2439-2452
14 p.
artikel
69 Determination of the orthotropic material properties of individual layers of printed circuit boards Fuchs, P.F.
2012
100-101 11 p. 2723-2730
8 p.
artikel
70 Distributed control based on distributed electronic circuits: application to vibration control Kader, Mahamane
2001
100-101 11 p. 1857-1866
10 p.
artikel
71 Does the ESD-failure current obtained by transmission-line pulsing always correlate to human body model tests? Stadler, W
1998
100-101 11 p. 1773-1780
8 p.
artikel
72 Driven Lorentz gas with 1/f k noise Kumičák, Juraj
2000
100-101 11 p. 1799-1802
4 p.
artikel
73 Dynamic hot carrier degradation effects in CMOS submicron transistors Bergonzoni, C.
1992
100-101 11 p. 1515-1519
5 p.
artikel
74 Dynamics of electromigration induced void/hillock growth and precipitation/dissolution of addition elements studied by in-situ scanning electron microscopy resistance measurements D’Haen, J.
1999
100-101 11 p. 1617-1630
14 p.
artikel
75 Early electromigration effects and early resistance changes Scorzoni, A.
1999
100-101 11 p. 1647-1656
10 p.
artikel
76 Editorial 1998
100-101 11 p. 1647-
1 p.
artikel
77 Editorial Stojadinović, N.
1992
100-101 11 p. 1497-1498
2 p.
artikel
78 Editorial Liou, Juin J.
2015
100-101 11 p. 2173-
1 p.
artikel
79 Editorial Board 2015
100-101 11 p. IFC-
1 p.
artikel
80 Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors González, T.
2000
100-101 11 p. 1951-1954
4 p.
artikel
81 Effect of EFO parameters and superimposed ultrasound on work hardening behavior of palladium coated copper wire in thermosonic ball bonding Song, W.H.
2012
100-101 11 p. 2744-2748
5 p.
artikel
82 Effect of elevated temperature on PCB responses and solder interconnect reliability under vibration loading Zhang, H.W.
2015
100-101 11 p. 2391-2395
5 p.
artikel
83 Effect of SiO2/Si interface roughness on gate current Mao, Ling-Feng
2001
100-101 11 p. 1903-1907
5 p.
artikel
84 Effect of trace platinum additions on the interfacial morphology of Sn–3.8Ag–0.7Cu alloy aged for long hours Wong, Karen M.C.
2014
100-101 11 p. 2536-2541
6 p.
artikel
85 Effects of Cu contents in flux on microstructure and joint strength of Sn–3.5Ag soldering with electroless Ni–P/Au surface finish Sakurai, Hitoshi
2012
100-101 11 p. 2716-2722
7 p.
artikel
86 Effects of quantization on random telegraph signals observed in deep-submicron MOSFETs Çelik-Butler, Zeynep
2000
100-101 11 p. 1823-1831
9 p.
artikel
87 Effects of thermomechanical cycling on lead and lead-free (SnPb and SnAgCu) surface mount solder joints Stam, F.A.
2001
100-101 11 p. 1815-1822
8 p.
artikel
88 Effects of TSVs (through-silicon vias) on thermal performances of 3D IC integration system-in-package (SiP) Lau, John H.
2012
100-101 11 p. 2660-2669
10 p.
artikel
89 Electrical degradation and recovery of dielectrics in n++-poly-Si/SiO x /SiO2/p-sub structures designed for application in low-voltage non-volatile memories Irrera, Fernanda
2001
100-101 11 p. 1809-1813
5 p.
artikel
90 Electrical noise of laser diodes measured over a wide range of bias currents Chen, X.Y
2000
100-101 11 p. 1925-1928
4 p.
artikel
91 Electrical Overstress of Integrated Circuits Kaschani, K.T.
2014
100-101 11 p. 2410-2416
7 p.
artikel
92 Electromigration behavior of multilayered Al/Hf and Al/Ti fine lines and its dependence on Cu and Pd solute additions Rodbell, K.P.
1992
100-101 11 p. 1521-1526
6 p.
artikel
93 Electromigration & Electronic Device Degradation G.W.A.D.,
1994
100-101 11 p. 1853-
1 p.
artikel
94 Electromigration induced aluminum atom migration retarding by grain boundary structure stabilization and copper doping Hasunuma, M
1999
100-101 11 p. 1631-1645
15 p.
artikel
95 Electromigration performance of Al–Si–Cu filled vias with titanium glue layer Kageyama, M
1999
100-101 11 p. 1697-1706
10 p.
artikel
96 Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain Moslemi, Mohammad Reza
2012
100-101 11 p. 2579-2584
6 p.
artikel
97 Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits Wang, Yu
2001
100-101 11 p. 1781-1787
7 p.
artikel
98 EMI-induced failures in integrated circuit operational amplifiers Graffi, S.
1992
100-101 11 p. 1551-1557
7 p.
artikel
99 Enhanced anisotropic conductive film (ACF) void-free bonding for Chip-On-Glass (COG) packages by means of low temperature plasmas Lin, Yung-Sen
2012
100-101 11 p. 2756-2762
7 p.
artikel
100 ESD failure analysis methodology Colvin, J
1998
100-101 11 p. 1705-1714
10 p.
artikel
101 ESD issues in compound semiconductor high-frequency devices and circuits Bock, K.
1998
100-101 11 p. 1781-1793
13 p.
artikel
102 ESD laboratory simulations and signature analysis of a CMOS programmable logic product 1 1 The following is a condensed and revised version of the original paper presented at ISTFA-94: Proceedings of the 20th International Symposium for testing and Failure Analysis, p117 (1994), Henry et al., see ref[26]. Henry, L.G.
1998
100-101 11 p. 1715-1721
7 p.
artikel
103 ESD protection for mixed-voltage I/O using NMOS transistors stacked in a cascode configuration R. Anderson, Warren
1999
100-101 11 p. 1521-1529
9 p.
artikel
104 ESD protection in thin film silicon on insulator technologies Smith, J.C
1998
100-101 11 p. 1669-1680
12 p.
artikel
105 ESD protection techniques for high frequency integrated circuits Croft, G.
1998
100-101 11 p. 1681-1689
9 p.
artikel
106 ESD robustness prediction and protection device design in partially depleted SOI technology Raha, P.
1998
100-101 11 p. 1723-1731
9 p.
artikel
107 Estimating changes in traffic intensity for M/M/1 queueing systems Jain, Sudha
1995
100-101 11 p. 1395-1400
6 p.
artikel
108 Evaluating the radiation sensitivity of GPGPU caches: New algorithms and experimental results Sabena, D.
2014
100-101 11 p. 2621-2628
8 p.
artikel
109 Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements Avenas, Y.
2012
100-101 11 p. 2617-2626
10 p.
artikel
110 Experimental determination of the kurtosis of RF noise in microwave low-noise devices Principato, Fabio
2000
100-101 11 p. 1929-1935
7 p.
artikel
111 Fabrication and advanced electrical and stability characterization of laser-shaped thick-film and LTCC microresistors for high temperature applications Nowak, Damian
2014
100-101 11 p. 2641-2644
4 p.
artikel
112 Fabrication of TiO2 compact layer precursor at various reaction times for dye sensitized solar cells Chou, Hsueh-Tao
2015
100-101 11 p. 2208-2212
5 p.
artikel
113 Finite element analysis of thermal stress for different Cu interconnects structure Ying, Wang
2012
100-101 11 p. 2856-2860
5 p.
artikel
114 1/f phase noise in a transistor and its application to reduce the frequency fluctuation in an oscillator Takagi, Keiji
2000
100-101 11 p. 1943-1950
8 p.
artikel
115 Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature Chi, Wei-Fong
2015
100-101 11 p. 2183-2187
5 p.
artikel
116 Generation of vertex connected subgraphs for multi-input multi-output reliability networks Prasad, V.C.
1995
100-101 11 p. 1437-1442
6 p.
artikel
117 20GHz on-chip measurement of ESD waveform for system level analysis Caignet, F.
2015
100-101 11 p. 2276-2283
8 p.
artikel
118 Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment Wang, Shea-Jue
2015
100-101 11 p. 2203-2207
5 p.
artikel
119 High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design Chen, Chao-Hung
2012
100-101 11 p. 2551-2555
5 p.
artikel
120 Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates Berntgen, Jürgen
2000
100-101 11 p. 1911-1914
4 p.
artikel
121 Hot-electron velocity fluctuations in two-dimensional electron gas channels Matulionis, A.
2000
100-101 11 p. 1803-1814
12 p.
artikel
122 Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps Sasikumar, A.
2015
100-101 11 p. 2258-2262
5 p.
artikel
123 Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies Claeys, C
2000
100-101 11 p. 1815-1821
7 p.
artikel
124 Impact of interface nature on deep sub-micron Al-plug resistance Tsui, Bing-Yue
2001
100-101 11 p. 1889-1896
8 p.
artikel
125 Impact of laminate cracks under solder pads on the fatigue lives of ball grid array solder joints Tegehall, Per-Erik
2015
100-101 11 p. 2354-2370
17 p.
artikel
126 Improved performance of GeON as charge storage layer in flash memory by optimal annealing Tao, Q.B.
2012
100-101 11 p. 2597-2601
5 p.
artikel
127 Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H2 Lee, Hao-Chieh
2015
100-101 11 p. 2178-2182
5 p.
artikel
128 Improved step stress accelerated life testing method for electronic product Qingchuan, He
2012
100-101 11 p. 2773-2780
8 p.
artikel
129 Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories Hsiao, Yu-Ping
2015
100-101 11 p. 2188-2197
10 p.
artikel
130 Income optimization of a repairable and redundant system Dhillon, B.S.
1994
100-101 11 p. 1709-1720
12 p.
artikel
131 Increasing the cycle life of lithium ion cells by partial state of charge cycling de Vries, Hans
2015
100-101 11 p. 2247-2253
7 p.
artikel
132 Induced thermo-mechanical reliability of copper-filled TSV interposer by transient selective annealing technology Lee, Chang-Chun
2015
100-101 11 p. 2213-2219
7 p.
artikel
133 Influence of device geometry on SOI single-hole transistor characteristics Tang, X
2001
100-101 11 p. 1841-1846
6 p.
artikel
134 Inside front cover - Editorial board 2014
100-101 11 p. IFC-
1 p.
artikel
135 Inside front cover - Editorial board 2012
100-101 11 p. IFC-
1 p.
artikel
136 In situ fixture for multi-modal characterization during electromigration and thermal testing of wire-like microscale specimens Mertens, James C.E.
2015
100-101 11 p. 2345-2353
9 p.
artikel
137 Investigation into socketed CDM (SDM) tester parasitics Chaine, M
1999
100-101 11 p. 1531-1540
10 p.
artikel
138 Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation Andrade, Maria Glória Caño de
2014
100-101 11 p. 2349-2354
6 p.
artikel
139 Investigation of electromigration reliability of redistribution lines in wafer-level chip-scale packages Kao, Chin-Li
2014
100-101 11 p. 2471-2478
8 p.
artikel
140 Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles Chiu, Hsien-Chin
2012
100-101 11 p. 2592-2596
5 p.
artikel
141 Investigation on CDM ESD events at core circuits in a 65-nm CMOS process Lin, Chun-Yu
2012
100-101 11 p. 2627-2631
5 p.
artikel
142 Investigation on SCR-based ESD protection device for biomedical integrated circuits in a 0.18-μm CMOS process Lin, Chun-Yu
2015
100-101 11 p. 2229-2235
7 p.
artikel
143 Investigation on thermal fatigue of SnAgCu, Sn100C, and SnPbAg solder joints in varying temperature environments Johansson, Jonas
2014
100-101 11 p. 2523-2535
13 p.
artikel
144 Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network Salome, Pascal
1999
100-101 11 p. 1579-1591
13 p.
artikel
145 Layout and bias options for maximizing V t1 in cascoded NMOS output buffers Miller, James W.
2001
100-101 11 p. 1751-1760
10 p.
artikel
146 Lead-free plastic area array BGAs and polymer stud grid arraysTM package reliability Wojciechowski, Dominique
2001
100-101 11 p. 1829-1839
11 p.
artikel
147 Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics Lin, K.C.
2015
100-101 11 p. 2198-2202
5 p.
artikel
148 Long term degradation of GaAs integrated circuits Konttinen, A.
1992
100-101 11 p. 1571-1576
6 p.
artikel
149 Long-term NBTI degradation under real-use conditions in IBM microprocessors Lu, Pong-Fei
2014
100-101 11 p. 2371-2377
7 p.
artikel
150 Long term noise measurements and median time to failure test for the characterization of electromigration in metal lines Ciofi, C.
1999
100-101 11 p. 1691-1696
6 p.
artikel
151 Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors Deen, M.Jamal
2000
100-101 11 p. 1855-1861
7 p.
artikel
152 Low frequency noise in gate and drain of PHEMT’s and related correlation Vildeuil, J.C
2000
100-101 11 p. 1915-1920
6 p.
artikel
153 Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors Mercha, A
2000
100-101 11 p. 1891-1896
6 p.
artikel
154 Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors Chroboczek, J.A
2000
100-101 11 p. 1897-1903
7 p.
artikel
155 Low-frequency noise measurements as a complementary tool in the investigation of integrated circuit reliability Diligenti, A.
1992
100-101 11 p. 1627-1631
5 p.
artikel
156 Maximum entropy fracture model and its use for predicting cyclic hysteresis in Sn3.8Ag0.7Cu and Sn3.0Ag0.5 solder alloys Tucker, J.P.
2014
100-101 11 p. 2513-2522
10 p.
artikel
157 Measurements of 1/f noise amplitude modulated by a large-signal carrier in bipolar junction transistors Sanchez, Juan E.
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158 Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses Pershenkov, V.S.
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159 Microscopic scale characterization and modeling of transistor degradation under HC stress Mamy Randriamihaja, Yoann
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160 Microstructural evaluation and failure analysis of Ag wire bonded to Al pads Choi, Mi-Ri
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161 Microstructure and morphology of interfacial intermetallic compound CoSn3 in Sn–Pb/Co–P solder joints Yang, Guoshuai
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163 Modeling and microstructural characterization of incubation, time-dependent drift and saturation during electromigration in Al–Si–Cu stripes Witvrouw, A.
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164 Modeling electromigration as a fluid–gas system Schoenmaker, Wim
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165 Modeling of current transport and 1/f noise in heterojunction bipolar transistors Ünlü, Hilmi
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166 Modeling of organic thin film field-effect transistors based on pentacene in saturation regime: Effect of light illumination Mansouri, S.
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169 Models for generation 1/f noise Kaulakys, B.
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170 Multiple adjacent image processing for automated failure location using electron beam testing Conard, D.
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171 Multistate coherent systems of order k Abouammoh, A.M.
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172 New aspects of the reliability of lithium thyonil chloride cells Bǎjenescu, Titu I.
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173 New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices Liao, Miao
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174 Noise in nanotechnology Kish, L.B
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175 Noise optimisation for the design of a reliable high speed X-ray readout integrated circuit Tsakas, E.F.
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176 Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing Russ, Christian
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177 [No title] Surya, Charles Chee
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178 [No title] Mergens, Markus P.J
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179 [No title] Voldman, Steven H
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183 Novel concept for high level overdrive tolerance of GaAs based FETs Lipka, K.M
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184 Novel Fe-containing Sn–1Ag–0.5Cu lead-free solder alloy with further enhanced elastic compliance and plastic energy dissipation ability for mobile products Shnawah, Dhafer Abdul-Ameer
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185 Novel fully silicided ballasting and MFT design techniques for ESD protection in advanced deep sub-micron CMOS technologies Verhaege, Koen G
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186 Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco Jankovic, Nebojsa
2012
100-101 11 p. 2537-2541
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187 Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors Xu, Weizong
2014
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188 On-chip electrostatic discharge protections in advanced CMOS technologies Maene, N.
1992
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189 On-chip stress, metal deformation and moisture measurements Bossche, A.
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190 On endurance and performance of erasure codes in SSD-based storage systems Alinezhad Chamazcoti, Saeideh
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191 On the InGaP/In x Ga1−x As pseudomorphic high electron-mobility transistors for high-temperature operations Lin, Kun-Wei
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192 On the intrinsic origin of 1/f noise Kaulakys, B.
2000
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193 On the use of n-well resistors in ESD protections Notermans, G.
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194 Optimal combination of soldering conditions of BGA for halogen-free and lead-free SMT-green processes Shu, Ming-Hung
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195 Optimized parallel decoding of difference set codes for high speed memories Demirci, Mustafa
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196 Optimizing the income of a repairable reliability system with early standby activation Dhillon, B.S.
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197 Optimum design in a JFET for minimum generation–recombination noise Godoy, A
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198 Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer Huang, X.D.
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199 Performances and reliability of HEMTs: State of the art and experimental analysis Conti, P.C.
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200 Prediction of damage and fatigue life of high-temperature flip chip assembly interconnections at operations Amalu, Emeka H.
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201 Probabilistic analysis of dynamic and temporal fault trees using accurate stochastic logic gates Cheshmikhani, Elham
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202 Probability calculation of read failures in nano-scaled SRAM cells under process variations Aghababa, Hossein
2012
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203 Problems of estimating meantime of the system failure Jain, Sudha
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204 Process optimization of RTA on the characteristics of ITO-coated GaN-based LEDs Hao, H.L.
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205 Publications, notices, calls for papers, etc. 1992
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208 Random telegraph noise and leakage current in smart power technology DMOS devices Pogany, D
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209 Releasing a circuit designed and manufactured on a new technology: A comprehensive graphical decision aid Blanchart, Jacques
1994
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210 Reliability analysis of systems with fuzzy times of structure modifications Utkin, Lev V.
1994
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211 Reliability and optical properties of LED lens plates under high temperature stress Yazdan Mehr, M.
2014
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212 Reliability investigations on LIFT-printed isotropic conductive adhesive joints for system-in-foil applications Sridhar, Ashok
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213 Reliability: Is it worth the effort? An assessment of the value of reliability tasks and techniques Burns, R.J.
1994
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214 Reliability model of series-parallel systems Moustafa, Magdi S.
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215 Reliability monitoring of components for telecom applications: Failure mechanisms driving technology assessment Motta, Antonino
1992
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216 Reliability of compound semiconductor devices Fantini, Fausto
1992
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217 Reliability of ICA attachment of SMDs on inkjet-printed substrates Niittynen, Juha
2012
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218 Reliability problems of submicron MOS transistors and circuits Krautschneider, Wolfgang H.
1992
100-101 11 p. 1499-1508
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219 Reliable study of time- and frequency-domain EMI-induced noise in Wien bridge oscillator Tsai, Han-Chang
2012
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220 Research on lumen depreciation related to LED packages by in-situ measurement method Quan, Chen
2015
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221 Resistive bridge defect detection enhancement under parameter variations combining Low V DD and body bias in a delay based test Villacorta, Hector
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222 Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111) Fontserè, A.
2012
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223 RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures Qin, Guoxuan
2012
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224 RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments Yen, H.D.
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225 Robust FinFET SRAM design based on dynamic back-gate voltage adjustment Ebrahimi, Behzad
2014
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226 Simulation of electromigration noise in polycrystalline metal stripes Di Pascoli, S
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227 Single bit failure mechanism in DRAMs caused by MILO cracks Kitagawa, H.
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228 Skewness and kurtosis of 1/f noise in semiconductor devices Principato, Fabio
2000
100-101 11 p. 1969-1973
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229 SPC chart selection process Anjard, Ronald P.
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230 Stiffness-tolerant methods for transient analysis of stiff Markov chains Malhotra, Manish
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231 Stochastic analysis of k-out-of-N:G redundant systems with repair and multiple critical and non-critical errors Kee Chung, Who
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232 Structural design guideline to minimize extreme low-k delamination potential in 40nm flip-chip packages Lai, Yi-Shao
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233 Studying the effects of intermittent faults on a microcontroller Gil-Tomás, Daniel
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234 Study of a dipping method for flip-chip flux coating Wei, Zhang
2014
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235 Study of bending reliability and electrical properties of platinum lines on flexible polyimide substrates Molina-Lopez, F.
2014
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236 Study of free air ball formation in Ag–8Au–3Pd alloy wire bonding Guo, Rui
2014
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237 Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy Lin, Shih-Hung
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238 Study of the effects of rapid thermal annealing in generation–recombination noise in MBE grown GaN thin films Surya, C.
2000
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239 Study of the ESD behavior of different clamp configurations in a 0.35 μm CMOS technology Richier, C
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100-101 11 p. 1733-1739
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240 Study of the self-alignment of no-flow underfill for micro-BGA assembly Chan, Y.C
2001
100-101 11 p. 1867-1875
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241 Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions Koley, Kalyan
2012
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242 Synthesis of Au–Sn alloy nanoparticles for lead-free electronics with unique combination of low and high melting temperatures Tabatabaei, Salomeh
2012
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243 Techniques and characterization of pulsed electromigration at the wafer-level Suehle, John S.
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244 Technological analysis of integrated circuits as a part of a manufacturing lines agreement for France Telecom: Methodology and examples of potential reliability problems Boulaire, J.Y.
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245 Test method in voltage contrast mode using liquid crystals Picart, B.
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246 Texture of electrodeposited tin layers and its influence on their corrosion behavior Eckold, P.
2014
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2001
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2015
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1999
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2001
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259 The truncated queue: M/M/2/m/m + Y with balking spares, machine interference and an additional server for longer queues (Krishnamoorthi discipline) Al-Seedy, R.O.
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261 Threshold voltage instability of nanoscale charge trapping non-volatile memory at steady phase Lee, Meng Chuan
2014
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262 Time between unscheduled removals Schäbe, Hendrik
1994
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263 Time-domain viscoelastic constitutive model based on concurrent fitting of frequency-domain characteristics Chiu, Tz-Cheng
2015
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2001
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265 Total-ionizing-dose effects and reliability of carbon nanotube FET devices Zhang, Cher Xuan
2014
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266 Ultra-fine pitch palladium-coated copper wire bonding: Effect of bonding parameters Lim, Adeline B.Y.
2014
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2015
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268 Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors Whiting, P.G.
2012
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269 Unique ESD failure mechanisms during negative to Vcc HBM tests Chaine, M
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270 Universal mechanisms of Al metallization ageing in power MOSFET devices Martineau, Donatien
2014
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271 VLSI failure analysis: A review Nikawa, Kiyoshi
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272 Voltage dependent degradation of HfSiON/SiO2 nMOSFETs under positive bias temperature instability Kim, Cheolgyu
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273 Water absorption characterisation, electrical reliability and mechanical testing of a submerged laminated a-Si thin film photovoltaic (PV) cells Trapani, Kim
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274 Where do we go from here? Reiche, H.
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275 Zinc oxide-praseodymia semiconducting varistors having a powerful surge suppression capability Nahm, Choon-W.
2015
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276 ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor Ding, Xingwei
2014
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                             276 gevonden resultaten
 
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