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                             87 results found
no title author magazine year volume issue page(s) type
1 ACD grows up—fast 1971
 10 4 p. 250-
1 p.
 article
2 A generalization of the concept of the integrated circuits Tarui, Yasuo
 1971
 10 4 p. 227-228
2 p.
 article
3 Algebraic properties of faults in logic networks 1971
 10 4 p. 250-
1 p.
 article
4 Automatic mask alignment in MOS/LSI processing 1971
 10 4 p. 250-251
2 p.
 article
5 Calculation of confidence limits for MTBF and λ 1971
 10 4 p. 287-290
4 p.
 article
6 Calendar of International Conferences, Symposia, Lectures and Meetings of Interest 1971
 10 4 p. 231-233
3 p.
 article
7 Calls for papers 1971
 10 4 p. 245-246
2 p.
 article
8 Capacitive keys, simpler circuits add up to reliable keyboard 1971
 10 4 p. 252-
1 p.
 article
9 Ceramics for packaging 1971
 10 4 p. 251-
1 p.
 article
10 Changes of mobility along a depletion type MOS transistor channel 1971
 10 4 p. 254-
1 p.
 article
11 Characteristics and applications of bias sputtering 1971
 10 4 p. 256-
1 p.
 article
12 Compatibility between thin and thick film techniques 1971
 10 4 p. 256-
1 p.
 article
13 Control of r.f. sputtered film properties through substrate tuning 1971
 10 4 p. 257-258
2 p.
 article
14 Counter design using microelectronic circuits 1971
 10 4 p. 250-
1 p.
 article
15 Courses in microelectronics and reliability 1971
 10 4 p. 239-240
2 p.
 article
16 Courses in microelectronics and reliability 1971
 10 4 p. 241-244
4 p.
 article
17 Current trends and future developments in optoelectronic displays 1971
 10 4 p. 250-
1 p.
 article
18 D.c. arc anodic plasma oxidation—a new vacuum process for solid state device fabrication 1971
 10 4 p. 251-
1 p.
 article
19 Depletion-mode devices hike speed of MOS random access memory 1971
 10 4 p. 258-
1 p.
 article
20 Designing an LSI memory system that outperforms cores—economically 1971
 10 4 p. 251-
1 p.
 article
21 Determining of the extent of long-term reliability tests Tomášek, K.F.
 1971
 10 4 p. 285-286
2 p.
 article
22 Digital ICS + VOR = simpler navigation 1971
 10 4 p. 253-
1 p.
 article
23 Distributed-lumped-active network realizations of a delay line suitable for microelectronic applications Dutta Roy, S.C.
 1971
 10 4 p. 277-283
7 p.
 article
24 Divide frequencies by an integer 1971
 10 4 p. 253-
1 p.
 article
25 Electron activity coefficients in heavily doped semiconductors with small effective mass 1971
 10 4 p. 255-
1 p.
 article
26 Electronic properties of amorphous semiconductors 1971
 10 4 p. 253-
1 p.
 article
27 Electron tunneling in clean Al-insulator-normal metal junction 1971
 10 4 p. 253-
1 p.
 article
28 Electropolishing silicon 1971
 10 4 p. 251-
1 p.
 article
29 Excited 1s levels of Bi donors in Si 1971
 10 4 p. 254-
1 p.
 article
30 Fast logic extends range of high-frequency counters 1971
 10 4 p. 252-
1 p.
 article
31 Film thickness measurement by absolute methods 1971
 10 4 p. 257-
1 p.
 article
32 Gases for the electronic industry—a changing technology 1971
 10 4 p. 251-
1 p.
 article
33 Glass, its vital role in semiconductor packaging 1971
 10 4 p. 251-
1 p.
 article
34 Glaze resistor paste preparation 1971
 10 4 p. 256-
1 p.
 article
35 High-temperature behavior of GaAs junctions prepared by different techniques 1971
 10 4 p. 255-
1 p.
 article
36 ICs ignore noise 1971
 10 4 p. 251-
1 p.
 article
37 Improvements in reliability of metal film resistors 1971
 10 4 p. 250-
1 p.
 article
38 Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs 1971
 10 4 p. 255-256
2 p.
 article
39 Inside electronic watches: a micropower movement 1971
 10 4 p. 253-
1 p.
 article
40 Integrated-circuit digital logic families 1971
 10 4 p. 251-
1 p.
 article
41 Integrated circuits for communications applications 1971
 10 4 p. 252-
1 p.
 article
42 Investigation of the distribution of aluminium in silicon in alloy p−n junctions 1971
 10 4 p. 254-255
2 p.
 article
43 Investigation of the influence of technology on Si-SiO2 system and MOS structure electrical properties 1971
 10 4 p. 252-
1 p.
 article
44 Ionic contamination-induced degradation of low current h FE 1971
 10 4 p. 249-
1 p.
 article
45 Items of interest 1971
 10 4 p. 229-
1 p.
 article
46 Josephson effects in thin film “Weak-Links” 1971
 10 4 p. 256-
1 p.
 article
47 Junction-coating resins improve s. c. performance 1971
 10 4 p. 251-
1 p.
 article
48 Laser tests ICs with light touch 1971
 10 4 p. 258-
1 p.
 article
49 Life testing relays and electromechanical devices 1971
 10 4 p. 249-
1 p.
 article
50 Light sensitive CdS thin films with temperature resistant contacts Kortlandt, J.
 1971
 10 4 p. 261-267
7 p.
 article
51 Low cost digital I.C.'s yield three-phase signal generator 1971
 10 4 p. 253-
1 p.
 article
52 Metal-insulator transition metal oxides 1971
 10 4 p. 253-254
2 p.
 article
53 Metallization systems for integrated circuits 1971
 10 4 p. 250-
1 p.
 article
54 Modern electronic maintenance principles G.W.A.D.,
 1971
 10 4 p. 259-
1 p.
 article
55 Molybdenum gates open the door to faster MOS memories 1971
 10 4 p. 253-
1 p.
 article
56 M.S.I. counters generate arithmetic functions 1971
 10 4 p. 252-
1 p.
 article
57 New IC market: electronic watches 1971
 10 4 p. 252-253
2 p.
 article
58 Papers to be published in future issues 1971
 10 4 p. 260-
1 p.
 article
59 Part 1. Plastic-ceramic duel stirs up new design concepts for LSI packages 1971
 10 4 p. 251-
1 p.
 article
60 Performance degradation of bidirectional triode thyristors due to di/dt stress 1971
 10 4 p. 249-250
2 p.
 article
61 Phased locked loops plus ICs—and, presto, better circuitry! 1971
 10 4 p. 252-
1 p.
 article
62 Phenomena occurring at the Al-Si interface during the formation of p−n junction 1971
 10 4 p. 255-
1 p.
 article
63 Process and performance characteristics of “Birox” thick-film resistor compositions 1971
 10 4 p. 257-
1 p.
 article
64 Recent United Kingdom patents in microelectronics 1971
 10 4 p. 247-248
2 p.
 article
65 Recombination in strongly excited silicon 1971
 10 4 p. 255-
1 p.
 article
66 Reliability assessment myths and misuse of statistics 1971
 10 4 p. 249-
1 p.
 article
67 1971 Reliability Physics Symposium 1971
 10 4 p. 235-238
4 p.
 article
68 Semivacancy pair in crystalline silicon 1971
 10 4 p. 253-
1 p.
 article
69 Shallow acceptor states in semiconductors—the local strain field 1971
 10 4 p. 254-
1 p.
 article
70 Some properties of thick film niobate capacitors 1971
 10 4 p. 257-
1 p.
 article
71 Systems organisation 1971
 10 4 p. 252-
1 p.
 article
72 Tantalum nitride thin film resistors with low TCR 1971
 10 4 p. 256-
1 p.
 article
73 The application of electron/ion beam technology to microelectronics 1971
 10 4 p. 258-
1 p.
 article
74 The economics of operator participation in automatic testing 1971
 10 4 p. 250-
1 p.
 article
75 The economics of thick film hybrid microcircuit production 1971
 10 4 p. 257-
1 p.
 article
76 The impact of the silicon gate process on the application of MOS circuits 1971
 10 4 p. 252-
1 p.
 article
77 The influence of geometry and conductive terminations on thick film resistors 1971
 10 4 p. 258-
1 p.
 article
78 Theory of tunneling into interface states 1971
 10 4 p. 254-
1 p.
 article
79 The role of thin films in the electron devices 1971
 10 4 p. 257-
1 p.
 article
80 The third dimension in thick-films multilayer technology 1971
 10 4 p. 257-
1 p.
 article
81 Thick film conductor adhesion testing Anjard, R.P.
 1971
 10 4 p. 269-274
6 p.
 article
82 Thin film analysis by Auger Electron Spectroscopy 1971
 10 4 p. 258-
1 p.
 article
83 Thin-film circuits benefit r.f. sputtering technique 1971
 10 4 p. 257-
1 p.
 article
84 Those aren't movie reels—they're 35-mm. rolls of ICs 1971
 10 4 p. 251-
1 p.
 article
85 Variation of the carrier concentration of epitaxial GaAs without addition of dopants 1971
 10 4 p. 255-
1 p.
 article
86 Velocity field measurements of electrons in p-type material 1971
 10 4 p. 254-
1 p.
 article
87 What's available in MSI? 1971
 10 4 p. 250-
1 p.
 article
                             87 results found
 
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