nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A consideration on design of thin-film integrated circuits
|
|
|
1971 |
10 |
2 |
p. 131- 1 p. |
artikel |
2 |
A gyrator suitable for monolithic, bipolar construction
|
|
|
1971 |
10 |
2 |
p. 127- 1 p. |
artikel |
3 |
A method for testing and bonding beam-lead devices
|
|
|
1971 |
10 |
2 |
p. 125- 1 p. |
artikel |
4 |
A Monolithic image sensor for a reading aid for the blind
|
|
|
1971 |
10 |
2 |
p. 126-127 2 p. |
artikel |
5 |
Analysis of Rb and Cs implantations in silicon by channeling and Hall effect measurements
|
|
|
1971 |
10 |
2 |
p. 129- 1 p. |
artikel |
6 |
An educational thick film microcircuitry facility
|
|
|
1971 |
10 |
2 |
p. 123- 1 p. |
artikel |
7 |
A new method for evaluation of mis structure insulation films
|
Beneš, O. |
|
1971 |
10 |
2 |
p. 105-112 8 p. |
artikel |
8 |
An integrated circuit switch for auditory research
|
|
|
1971 |
10 |
2 |
p. 127- 1 p. |
artikel |
9 |
An MOS quality and reliability program
|
McKenna, R. |
|
1971 |
10 |
2 |
p. 67-74 8 p. |
artikel |
10 |
Application of a quartz crystal thickness monitor in the continuous measurement of thickness of evaporated and sputtered metal films
|
|
|
1971 |
10 |
2 |
p. 131- 1 p. |
artikel |
11 |
Assessing equipment reliability for microwave radio-relay systems
|
Walrond, J.C. |
|
1971 |
10 |
2 |
p. 95-103 9 p. |
artikel |
12 |
A standardized hybrid microcircuit design cycle
|
|
|
1971 |
10 |
2 |
p. 124- 1 p. |
artikel |
13 |
Band structure of silicon by pseudo-OPW
|
|
|
1971 |
10 |
2 |
p. 128- 1 p. |
artikel |
14 |
Behavior of thick film resistors deposited on thick film dielectric layers
|
|
|
1971 |
10 |
2 |
p. 130- 1 p. |
artikel |
15 |
Calendar of international conferences, symposia, lectures and meetings of interest
|
|
|
1971 |
10 |
2 |
p. 117-120 4 p. |
artikel |
16 |
Can plastic encapsulated microcircuits provide reliability with economy?
|
|
|
1971 |
10 |
2 |
p. 122- 1 p. |
artikel |
17 |
Cleaners and cleaning for components and microelectronics
|
|
|
1971 |
10 |
2 |
p. 123- 1 p. |
artikel |
18 |
Comparison of predicted microwave radio outages
|
|
|
1971 |
10 |
2 |
p. 123- 1 p. |
artikel |
19 |
Complex MOS circuit arrays
|
|
|
1971 |
10 |
2 |
p. 128- 1 p. |
artikel |
20 |
Confidence intervals for the ratio of two poisson means and poisson predictor intervals
|
|
|
1971 |
10 |
2 |
p. 121- 1 p. |
artikel |
21 |
Design the accidents out of your product!
|
|
|
1971 |
10 |
2 |
p. 121- 1 p. |
artikel |
22 |
Determination of parts per billion of oxygen in silicon
|
|
|
1971 |
10 |
2 |
p. 129- 1 p. |
artikel |
23 |
Diamond scribers start to give way to laser machines, slurry saws, new etch methods
|
|
|
1971 |
10 |
2 |
p. 125- 1 p. |
artikel |
24 |
Editor's note
|
|
|
1971 |
10 |
2 |
p. i- 1 p. |
artikel |
25 |
Effect of electron irradiation on lithium-doped silicon
|
|
|
1971 |
10 |
2 |
p. 129- 1 p. |
artikel |
26 |
Efficiency and programming of automatic artwork generators
|
|
|
1971 |
10 |
2 |
p. 125- 1 p. |
artikel |
27 |
Equipment designer's approach to packaging of hybrid microcircuits
|
|
|
1971 |
10 |
2 |
p. 131- 1 p. |
artikel |
28 |
Experiments concerning the life testing of semiconductor devices—II. Life testing of transistors in switching operation mode
|
Kemény, A.P. |
|
1971 |
10 |
2 |
p. 75-86 12 p. |
artikel |
29 |
Failure Rate/MTBF
|
|
|
1971 |
10 |
2 |
p. 121- 1 p. |
artikel |
30 |
Ferromagnetism in thin films
|
|
|
1971 |
10 |
2 |
p. 130- 1 p. |
artikel |
31 |
Film thickness measurement by monitoring methods
|
|
|
1971 |
10 |
2 |
p. 131- 1 p. |
artikel |
32 |
Fine line technologies for microelectronic devices
|
|
|
1971 |
10 |
2 |
p. 124- 1 p. |
artikel |
33 |
Geometry dependence of thick film resistors
|
|
|
1971 |
10 |
2 |
p. 126- 1 p. |
artikel |
34 |
Hermetic sealing of integrated circuit packages
|
|
|
1971 |
10 |
2 |
p. 125- 1 p. |
artikel |
35 |
IC comparator separates sync pulses
|
|
|
1971 |
10 |
2 |
p. 127- 1 p. |
artikel |
36 |
ICs pick frequencies for untuned power amplifier
|
|
|
1971 |
10 |
2 |
p. 127- 1 p. |
artikel |
37 |
Integrated circuits for the industrial world
|
|
|
1971 |
10 |
2 |
p. 123- 1 p. |
artikel |
38 |
Integrated tantalum film RC circuits
|
|
|
1971 |
10 |
2 |
p. 131- 1 p. |
artikel |
39 |
Intermetallic formation in gold-aluminum systems
|
|
|
1971 |
10 |
2 |
p. 129-130 2 p. |
artikel |
40 |
Inversion layers in abrupt p-n junctions
|
|
|
1971 |
10 |
2 |
p. 128- 1 p. |
artikel |
41 |
Ion implantation gives MOS ROM bipolar speed
|
|
|
1971 |
10 |
2 |
p. 132- 1 p. |
artikel |
42 |
Limitations of the MIS capacitance method resulting from semiconductor properties
|
|
|
1971 |
10 |
2 |
p. 130- 1 p. |
artikel |
43 |
Measuring integrated electronic device geometry via HF-NO-H2O vapor stain
|
|
|
1971 |
10 |
2 |
p. 129- 1 p. |
artikel |
44 |
Measuring techniques for trimming thick film resistors
|
|
|
1971 |
10 |
2 |
p. 127- 1 p. |
artikel |
45 |
Mechanism of failure in high voltage mica paper capacitors
|
|
|
1971 |
10 |
2 |
p. 122- 1 p. |
artikel |
46 |
Microcircuit packaging and assembly—State of the art
|
|
|
1971 |
10 |
2 |
p. 125- 1 p. |
artikel |
47 |
Multilayered hybrid LSI using insulating film deposited by RF sputtering
|
|
|
1971 |
10 |
2 |
p. 125- 1 p. |
artikel |
48 |
Multi-valley effective-mass approximation of shallow donor levels in silicon
|
|
|
1971 |
10 |
2 |
p. 129- 1 p. |
artikel |
49 |
Nonparametric reliability and its uses
|
|
|
1971 |
10 |
2 |
p. 122- 1 p. |
artikel |
50 |
Permittivity of glass-ceramic materials for thick film capacitor dielectric
|
|
|
1971 |
10 |
2 |
p. 126- 1 p. |
artikel |
51 |
Phonon-induced hopping transitions in germanium and silicon
|
|
|
1971 |
10 |
2 |
p. 128- 1 p. |
artikel |
52 |
Point-wise availability of an electronic system with reduced efficiency class of components
|
Das, P. |
|
1971 |
10 |
2 |
p. 61-66 6 p. |
artikel |
53 |
Preparation and properties of 10-μF/in2 thin-film capacitors
|
|
|
1971 |
10 |
2 |
p. 127- 1 p. |
artikel |
54 |
Properties of thin films of zinc oxide prepared by a chemical spray method
|
|
|
1971 |
10 |
2 |
p. 131- 1 p. |
artikel |
55 |
Reliability of a repairable multicomponent system with redundancy in parallel
|
|
|
1971 |
10 |
2 |
p. 122- 1 p. |
artikel |
56 |
Reliability test plan
|
|
|
1971 |
10 |
2 |
p. 121- 1 p. |
artikel |
57 |
Resin systems for encapsulation of microelectronic packages
|
|
|
1971 |
10 |
2 |
p. 124- 1 p. |
artikel |
58 |
Resistance anomalies in Ag-PdO Thick-film resistors
|
|
|
1971 |
10 |
2 |
p. 126- 1 p. |
artikel |
59 |
Rigid and non-rigid beam-lead substrates
|
|
|
1971 |
10 |
2 |
p. 124- 1 p. |
artikel |
60 |
Selection parameters for hybrid bonding alloys
|
|
|
1971 |
10 |
2 |
p. 123-124 2 p. |
artikel |
61 |
Silicon defect structure induced by arsenic diffusion and subsequent steam oxidation
|
|
|
1971 |
10 |
2 |
p. 122- 1 p. |
artikel |
62 |
Solder sealing of large complex hybrid microcircuits
|
|
|
1971 |
10 |
2 |
p. 124- 1 p. |
artikel |
63 |
Solving problems in metal-oxide-semiconductors
|
|
|
1971 |
10 |
2 |
p. 128- 1 p. |
artikel |
64 |
Stress concentration in silicon-insulator interfaces
|
|
|
1971 |
10 |
2 |
p. 127-128 2 p. |
artikel |
65 |
Technological advances in large-scale integration
|
|
|
1971 |
10 |
2 |
p. 123- 1 p. |
artikel |
66 |
Termination interface reaction with non-palladium resistors and its effect on apparent sheet resistivity
|
|
|
1971 |
10 |
2 |
p. 126- 1 p. |
artikel |
67 |
Tests on thick film resistors
|
Russell, R.F. |
|
1971 |
10 |
2 |
p. 115- 1 p. |
artikel |
68 |
The application of the STD process to hybrid microelectronics
|
|
|
1971 |
10 |
2 |
p. 125- 1 p. |
artikel |
69 |
The application of thin-film techniques to microwave integrated circuits
|
|
|
1971 |
10 |
2 |
p. 130- 1 p. |
artikel |
70 |
The interconnection and packaging of thick film microcircuits
|
|
|
1971 |
10 |
2 |
p. 124- 1 p. |
artikel |
71 |
The latest word in leak detection
|
|
|
1971 |
10 |
2 |
p. 123- 1 p. |
artikel |
72 |
The Metal-Nitride-Oxide-Silicon (MNOS) Transistor—Characteristics and applications
|
|
|
1971 |
10 |
2 |
p. 126- 1 p. |
artikel |
73 |
The residual gases and vacuum deposited 20KÅ thick Al films
|
|
|
1971 |
10 |
2 |
p. 130- 1 p. |
artikel |
74 |
Thermal design problems with high speed ICs—Part 2
|
|
|
1971 |
10 |
2 |
p. 124- 1 p. |
artikel |
75 |
Thick and thin film resistors: performance and reliability comparisons
|
|
|
1971 |
10 |
2 |
p. 126- 1 p. |
artikel |
76 |
Thin film deposition technology
|
|
|
1971 |
10 |
2 |
p. 130- 1 p. |
artikel |
77 |
Thin film physics in microelectronics
|
|
|
1971 |
10 |
2 |
p. 131- 1 p. |
artikel |
78 |
Transient responses of a pulsed MIS-capacitor
|
|
|
1971 |
10 |
2 |
p. 128- 1 p. |
artikel |
79 |
Two band model for negative magnetoresistance in heavily doped semiconductors
|
|
|
1971 |
10 |
2 |
p. 129- 1 p. |
artikel |
80 |
Valence-band deformation potentials for the III–V compounds
|
|
|
1971 |
10 |
2 |
p. 128- 1 p. |
artikel |
81 |
Yes, redundancy increases reliability
|
|
|
1971 |
10 |
2 |
p. 122-123 2 p. |
artikel |