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                             87 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absolute quantitative time resolved voltage measurements on 1 μm conducting lines of integrated circuits via electric force microscope-(EFM-) testing Bangert, J.
 1997
 10-11 p. 1579-1582
4 p.
 artikel
2 Activation of parasitic bipolar transistor during reverse recovery of MOSFET's intrinsic diode Busatto, G.
 1997
 10-11 p. 1507-1510
4 p.
 artikel
3 A high resolution method for measuring hot carrier degradation in matched transistor pairs Dreesen, R.
 1997
 10-11 p. 1533-1536
4 p.
 artikel
4 A laser beam method for evaluation of thermal time constant in smart power devices Seliger, N.
 1997
 10-11 p. 1727-1730
4 p.
 artikel
5 Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization Labat, N.
 1997
 10-11 p. 1675-1678
4 p.
 artikel
6 Analysis of the evolution of the trapped charge distributions in 10nm SiO2 films during DC and bipolar dynamic stress Rodriguez, R.
 1997
 10-11 p. 1517-1520
4 p.
 artikel
7 An automatic adaptation method for heterojunction bipolar transistor dynamic test Gauffre, S.
 1997
 10-11 p. 1695-1698
4 p.
 artikel
8 A new reliability prediction model for telecommunication hardware Nilsson, Mattias
 1997
 10-11 p. 1429-1432
4 p.
 artikel
9 An investigation into electrical parameter settling times of GaAs FETs and MMICs Coppel, F.
 1997
 10-11 p. 1687-1690
4 p.
 artikel
10 An on-wafer test structure to measure the effect of thermally-induced stress on silicon devices Haddab, Y.
 1997
 10-11 p. 1441-1444
4 p.
 artikel
11 An other way to assess electronics part reliability Charpenel, P.
 1997
 10-11 p. 1449-1452
4 p.
 artikel
12 Applications of scanning electrical force microscopy Müller, F.
 1997
 10-11 p. 1631-1634
4 p.
 artikel
13 Are high resolution resistometric methods really useful for the early detection of electromigration damage? Scorzoni, A.
 1997
 10-11 p. 1479-1482
4 p.
 artikel
14 A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy de Wolf, I.
 1997
 10-11 p. 1591-1594
4 p.
 artikel
15 A study of the thermal-electrical- and mechanical influence on degradation in an aluminum-pad structure Yu, X.
 1997
 10-11 p. 1545-1548
4 p.
 artikel
16 Author index 1997
 10-11 p. I-II
nvt p.
 artikel
17 Automated placement of testing pads for electron-beam observation Kuji, Norio
 1997
 10-11 p. 1565-1568
4 p.
 artikel
18 Bias stress reliability of Be-, Zn- and C-doped base microwave HBTs Rezazadeh, A.A.
 1997
 10-11 p. 1703-1706
4 p.
 artikel
19 Bias temperature reliability of p-channel high-voltage devices Demesmaeker, A.
 1997
 10-11 p. 1767-1770
4 p.
 artikel
20 Building-in reliability during library development: Hot-carrier degradation is no longer a problem of the technologists only! Bellens, R.
 1997
 10-11 p. 1425-1428
4 p.
 artikel
21 Characterisation of degradation mechanisms in resonant tunnelling diodes Vogt, A.
 1997
 10-11 p. 1691-1694
4 p.
 artikel
22 Characteristics of intrinsic breakdown of thin reoxidized nitride for trench capacitors Wu, E.
 1997
 10-11 p. 1511-1516
6 p.
 artikel
23 Characterization of thermal device properties with nanometer resolution Cramer, R.M.
 1997
 10-11 p. 1583-1586
4 p.
 artikel
24 Comments on the utilization of noise measurements for the characterization of electromigration in metal lines Ciofi, C.
 1997
 10-11 p. 1607-1610
4 p.
 artikel
25 Comparison of different on-chip ESD protection structures in a 0.35 μm CMOS technology Richier, C.
 1997
 10-11 p. 1537-1540
4 p.
 artikel
26 Computer-based training for failure analysis Henderson, C.
 1997
 10-11 p. 1445-1448
4 p.
 artikel
27 Cosmic ray induced failures in high power semiconductor devices Zeller, H.R.
 1997
 10-11 p. 1711-1718
8 p.
 artikel
28 Dangerous parasitics of socketed CDM ESD testers Gossner, H.
 1997
 10-11 p. 1465-1468
4 p.
 artikel
29 Development of “kink” in the output I–V characteristics of pseudomorphic hemt's after hot-electron accelerated testing Meneghesso, G.
 1997
 10-11 p. 1679-1682
4 p.
 artikel
30 Diagnostic technique for projecting gate oxide reliability and device reliability Park, Jong T.
 1997
 10-11 p. 1421-1424
4 p.
 artikel
31 Dielectric reliability in deep-submicron technologies: From thin to ultrathin oxides Vincent, E.
 1997
 10-11 p. 1499-1506
8 p.
 artikel
32 Dielectric testing for integrated power devices Oussalah, S.
 1997
 10-11 p. 1763-1766
4 p.
 artikel
33 Direct parameter extraction for hot-carrier reliability simulation Minehane, S.
 1997
 10-11 p. 1437-1440
4 p.
 artikel
34 Dual phase probing technique for IC-internal failure analysis Görlich, S.
 1997
 10-11 p. 1569-1574
6 p.
 artikel
35 Early resistance change and stress/electromigration modeling in aluminum interconnects Petrescu, V.
 1997
 10-11 p. 1491-1494
4 p.
 artikel
36 Editorial Labat, Nathalie
 1997
 10-11 p. ix-x
nvt p.
 artikel
37 Effect of tip shape in the design of long distance electrostatic force microscopy Belaidi, S.
 1997
 10-11 p. 1627-1630
4 p.
 artikel
38 Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions Hamidi, A.
 1997
 10-11 p. 1755-1758
4 p.
 artikel
39 Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe structures Pavan, P.
 1997
 10-11 p. 1561-1564
4 p.
 artikel
40 ESD characteristics of a lateral NPN protection device in epitaxial and non-epitaxial substrates Suzuki, Teruo
 1997
 10-11 p. 1453-1456
4 p.
 artikel
41 Evaluation of stresses in packaged ICs by In situ measurements with an assembly test chip and simulation Ducos, C.
 1997
 10-11 p. 1795-1798
4 p.
 artikel
42 Experimental analysis and 2D simulation of AlGaAs GaAs HBT base leakage current Maneux, C.
 1997
 10-11 p. 1707-1710
4 p.
 artikel
43 Failure mechanism and SPICE modeling of AlGaAs GaAs HBT long-term current instability Liou, J.J.
 1997
 10-11 p. 1643-1650
8 p.
 artikel
44 Failure mechanisms of GaAs mesfets with Cu/refractory metallized gates Feng, Ting
 1997
 10-11 p. 1699-1702
4 p.
 artikel
45 Finite element method applied to stress simulation of high power 980nm pump lasers Manna, M.
 1997
 10-11 p. 1667-1670
4 p.
 artikel
46 Ga As power mmic: A design methodology for reliability Muraro, J.L.
 1997
 10-11 p. 1651-1654
4 p.
 artikel
47 Gate and circuit level analysis of n-type SRAM reliability failures Symonds, K.
 1997
 10-11 p. 1541-1544
4 p.
 artikel
48 High performance microsystem packaging: A perspective Romig Jr., A.D.
 1997
 10-11 p. 1771-1781
11 p.
 artikel
49 High sensitivity and high resolution differential interferometer: Micrometric polariscope for thermomechanical studies in microelectronics Dilhaire, S.
 1997
 10-11 p. 1587-1590
4 p.
 artikel
50 High-temperature-reverse-bias testing of power VDMOS transistors Tošić, N.
 1997
 10-11 p. 1759-1762
4 p.
 artikel
51 Impact of InP HEMT epilayer designs on side gating effects Berthelemot, C.
 1997
 10-11 p. 1683-1686
4 p.
 artikel
52 Improving the ESD performance of input protection circuits in retrograde well and STI structures Park, Young-Kwan
 1997
 10-11 p. 1461-1464
4 p.
 artikel
53 Influence of ARC capping layer on stress induced voiding in narrow AlCu metallisations Arnaud, L.
 1997
 10-11 p. 1487-1490
4 p.
 artikel
54 Influence of thermal heating effect on pulsed DC electromigration Waltz, P.
 1997
 10-11 p. 1553-1556
4 p.
 artikel
55 In situ ageing, a development of the in situ techniques for building-in-reliability Galateanu, L.
 1997
 10-11 p. 1639-1642
4 p.
 artikel
56 In-situ study of the degradation behaviour of GaAs MESFETs for hi-rel applications Petersen, R.
 1997
 10-11 p. 1655-1658
4 p.
 artikel
57 Investigation of stress induced leakage current in CMOS structures with ultra-thin gate dielectrics Jahan, C.
 1997
 10-11 p. 1529-1532
4 p.
 artikel
58 Investigations of stress distributions in tungsten-filled via structures using finite element analysis Coughlan, J.
 1997
 10-11 p. 1549-1552
4 p.
 artikel
59 Layers decoration on fib cross-sections Perez, Guy
 1997
 10-11 p. 1611-1614
4 p.
 artikel
60 Lifetime prediction for PMOS and NMOS devices based on a degradation model for g ate- b ias- s tress Narr, A.
 1997
 10-11 p. 1433-1436
4 p.
 artikel
61 Low frequency noise characterization of 0.18μm Si CMOS transistors Boutchacha, T.
 1997
 10-11 p. 1599-1602
4 p.
 artikel
62 Mechanical response of solder joints in flip-chip type structures Soper, A.
 1997
 10-11 p. 1783-1786
4 p.
 artikel
63 Micro-extraction spectrometers for voltage contrast in the SEM Dinnis, A.R.
 1997
 10-11 p. 1623-1626
4 p.
 artikel
64 Micromachined structure reliability testing specificity. The Motorola MGS1100 gas sensor example Bosc, J.M.
 1997
 10-11 p. 1791-1794
4 p.
 artikel
65 Microstructural and surface effects on electromigration failure mechanism in Cu interconnects Gladkikh, A.
 1997
 10-11 p. 1557-1560
4 p.
 artikel
66 MMIC in-circuit and in-device testing with an on-wafer high frequency electric force microscope test system Leyk, A.
 1997
 10-11 p. 1575-1578
4 p.
 artikel
67 Modification and application of an emission microscope for continuous wavelength spectroscopy Rasras, M.
 1997
 10-11 p. 1595-1598
4 p.
 artikel
68 New methodology for localizing faults in programmable and commercial circuits Desplats, Romain
 1997
 10-11 p. 1619-1622
4 p.
 artikel
69 New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures Wang-Ratkovic, Janet
 1997
 10-11 p. 1747-1754
8 p.
 artikel
70 Noise and DC characteristics of power silicon diodes Crook, R.
 1997
 10-11 p. 1635-1638
4 p.
 artikel
71 Oxide thickness dependence of nitridation effects on TDDB characteristics Mazumder, M.K.
 1997
 10-11 p. 1521-1524
4 p.
 artikel
72 Reliability challenges for deep submicron interconnects McPherson, J.W.
 1997
 10-11 p. 1469-1477
9 p.
 artikel
73 Reliability issues in 650V high voltage bipolar-CMOS-DMOS integrated circuits van der Pol, Jacob A.
 1997
 10-11 p. 1723-1726
4 p.
 artikel
74 Reliability of smart power devices Murari, B.
 1997
 10-11 p. 1735-1742
8 p.
 artikel
75 Reliability study on three-dimensional Au WSiN interconnections for ultra-compact MMICs Sugahara, Hirohiko
 1997
 10-11 p. 1659-1662
4 p.
 artikel
76 Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs Llinares, P.
 1997
 10-11 p. 1603-1606
4 p.
 artikel
77 SiC-diodes forward surge current failure mechanisms: Experiment and simulation Udal, A.
 1997
 10-11 p. 1671-1674
4 p.
 artikel
78 Substrate-to-base solder joint reliability in high power IGBT modules Herr, E.
 1997
 10-11 p. 1719-1722
4 p.
 artikel
79 Suppressing the parasitic bipolar action of SOI-MOSFETs by using back-side bias-temperature treatment Koizumi, Hiroshi
 1997
 10-11 p. 1743-1746
4 p.
 artikel
80 Temperature and thermal conductivity modes of scanning probe microscopy for electromigration studies Buck, A.
 1997
 10-11 p. 1495-1498
4 p.
 artikel
81 Thermal characterization of IGBT power modules Cova, P.
 1997
 10-11 p. 1731-1734
4 p.
 artikel
82 Thermal simulation and characterisation of the reliability of THz Schottky diodes Brandt, M.
 1997
 10-11 p. 1663-1666
4 p.
 artikel
83 The thermally balanced bridge technique (TBBT): A new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes Van Olmen, J.
 1997
 10-11 p. 1483-1486
4 p.
 artikel
84 Three-dimensional analysis for multilayer wiring in sub-half-micron devices Murata, Naofumi
 1997
 10-11 p. 1615-1618
4 p.
 artikel
85 Transient stressing and characterization of thin tunnel oxides Ciappa, M.
 1997
 10-11 p. 1525-1528
4 p.
 artikel
86 Ultrasonic images interpretation improvement for microassembling technologies characterisation Bechou, L.
 1997
 10-11 p. 1787-1790
4 p.
 artikel
87 Using an SCR as ESD protection without latch-up danger Notermans, Guido
 1997
 10-11 p. 1457-1460
4 p.
 artikel
                             87 gevonden resultaten
 
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