| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A physics-based scheme for potentials of a-Si:H TFT with symmetric dual gate considering deep Gaussian DOS distribution
|
Qin, Jian
|
|
2014
|
95 |
C |
p. 46-51
6 p.
|
artikel
|
| 2 |
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects
|
Kumar, Ajit
|
|
2014
|
95 |
C |
p. 52-60
9 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2014
|
95 |
C |
p. IFC-
1 p.
|
artikel
|
| 4 |
Effect of electrode microstructure on the sensitivity and response time of potentiometric NOx sensors based on stabilized-zirconia and La5/3Sr1/3NiO4–YSZ sensing electrode
|
Chen, Ying
|
|
2014
|
95 |
C |
p. 23-27
5 p.
|
artikel
|
| 5 |
Effects of thermal treatment on radiative properties of HVPE grown InP layers
|
Luryi, Serge
|
|
2014
|
95 |
C |
p. 15-18
4 p.
|
artikel
|
| 6 |
Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm
|
Ioannidis, E.G.
|
|
2014
|
95 |
C |
p. 28-31
4 p.
|
artikel
|
| 7 |
Field controlled RF Graphene FETs with improved high frequency performance
|
Al-Amin, C.
|
|
2014
|
95 |
C |
p. 36-41
6 p.
|
artikel
|
| 8 |
Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate
|
Ahn, Ho-Kyun
|
|
2014
|
95 |
C |
p. 42-45
4 p.
|
artikel
|
| 9 |
Physical insights of body effect and charge degradation in floating-body DRAMs
|
Giusi, Gino
|
|
2014
|
95 |
C |
p. 1-7
7 p.
|
artikel
|
| 10 |
Pseudo-Boltzmann model for modeling the junctionless transistors
|
Avila-Herrera, F.
|
|
2014
|
95 |
C |
p. 19-22
4 p.
|
artikel
|
| 11 |
Self-heating in semiconductors: A comparative study
|
Freeman, Jon C.
|
|
2014
|
95 |
C |
p. 8-14
7 p.
|
artikel
|
| 12 |
The influence of channel layer thickness on the electrical properties of ZnO TFTs
|
Li, Gang
|
|
2014
|
95 |
C |
p. 32-35
4 p.
|
artikel
|
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