| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical and numerical model of spiral inductors on high resistivity silicon substrates
|
Mallik, Kanad
|
|
2014
|
93 |
C |
p. 43-48
6 p.
|
artikel
|
| 2 |
An injection efficiency model to characterize the injection capability and turn-off speed for >10kV 4H-SiC IGBTs
|
Lee, Meng-Chia
|
|
2014
|
93 |
C |
p. 27-39
13 p.
|
artikel
|
| 3 |
A novel model of the high-voltage VDMOS for the circuit simulation
|
Liu, Siyang
|
|
2014
|
93 |
C |
p. 21-26
6 p.
|
artikel
|
| 4 |
Behavior of the parameters of microcrystalline silicon TFTs under mechanical strain
|
Janfaoui, S.
|
|
2014
|
93 |
C |
p. 1-7
7 p.
|
artikel
|
| 5 |
Corrigendum to “Controlled growth, patterning and placement of carbon nanotube thin films” [Solid-State Electron. 54 (2010) 1204–1210]
|
Sangwan, V.K.
|
|
2014
|
93 |
C |
p. 66-
1 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2014
|
93 |
C |
p. IFC-
1 p.
|
artikel
|
| 7 |
Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
|
Palumbo, F.
|
|
2014
|
93 |
C |
p. 56-60
5 p.
|
artikel
|
| 8 |
Investigation of voltage-controlled oscillator circuits using organic thin-film transistors (OTFT) for use in VCO-based analog-to-digital converters
|
Ganesan, Ramkumar
|
|
2014
|
93 |
C |
p. 8-14
7 p.
|
artikel
|
| 9 |
Modeling of boron diffusion in silicon–germanium alloys using Kinetic Monte Carlo
|
Dopico, Ignacio
|
|
2014
|
93 |
C |
p. 61-65
5 p.
|
artikel
|
| 10 |
Planar GaAs nanowire tri-gate MOSFETs by vapor–liquid–solid growth
|
Zhang, Chen
|
|
2014
|
93 |
C |
p. 40-42
3 p.
|
artikel
|
| 11 |
Research on efficiency droop mechanism and improvement in AlGaInP Ultra-High-Brightness LEDs using the transient measurement method
|
Huang, Chien-Fu
|
|
2014
|
93 |
C |
p. 15-20
6 p.
|
artikel
|
| 12 |
Threshold voltage extraction in Tunnel FETs
|
Ortiz-Conde, Adelmo
|
|
2014
|
93 |
C |
p. 49-55
7 p.
|
artikel
|
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