| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Appraisal of semiconductor-metal-semiconductor transistor
|
Sze, S.M.
|
|
1966
|
9 |
8 |
p. 751-769
19 p.
|
artikel
|
| 2 |
Chemically sprayed thin film photovoltaic converters
|
Chamberlin, R.R.
|
|
1966
|
9 |
8 |
p. 819-820
2 p.
|
artikel
|
| 3 |
Control of diffusion induced dislocations in phosphorus diffused silicon
|
McDonald, R.A.
|
|
1966
|
9 |
8 |
p. 807-808
2 p.
|
artikel
|
| 4 |
Gallium arsenide-phosphide: Crystal, diffusion and laser properties
|
Nuese, C.J.
|
|
1966
|
9 |
8 |
p. 735-742
8 p.
|
artikel
|
| 5 |
Infrared interference spectra observed in silicon epitaxial wafers
|
Sato, K.
|
|
1966
|
9 |
8 |
p. 771-781
11 p.
|
artikel
|
| 6 |
Isolated GaAs transistors on high-resistivity GaAs substrate
|
von Munch, W.
|
|
1966
|
9 |
8 |
p. 826-in8
nvt p.
|
artikel
|
| 7 |
Quantum mechanics
|
Pincherle, L.
|
|
1966
|
9 |
8 |
p. 830-
1 p.
|
artikel
|
| 8 |
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
|
Grove, A.S.
|
|
1966
|
9 |
8 |
p. 783-806
24 p.
|
artikel
|
| 9 |
Surface space-charge barriers on semiconducting barium titanate
|
Holt, J.
|
|
1966
|
9 |
8 |
p. 813-818
6 p.
|
artikel
|
| 10 |
The preparation of high purity gallium arsenide by the Czochralski method
|
Liebmann, W.K.
|
|
1966
|
9 |
8 |
p. 828-830
3 p.
|
artikel
|
| 11 |
Work function aluminum-aluminum oxide
|
Antula, J.
|
|
1966
|
9 |
8 |
p. 825-826
2 p.
|
artikel
|
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