| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
CW X-band GaAs microwave generators
|
Straub, W.D.
|
|
1966
|
9 |
3 |
p. 281-282
2 p.
|
artikel
|
| 2 |
Ein UHF-transistor mit basisquerfeld für das frequenzgebiet um 1000 MHz
|
Fröschle, E.
|
|
1966
|
9 |
3 |
p. 245-253
9 p.
|
artikel
|
| 3 |
Field effect studies of the oxidized silicon surface
|
Lindmayer, J.
|
|
1966
|
9 |
3 |
p. 225-235
11 p.
|
artikel
|
| 4 |
High injection theories of the p−n junction in the charge neutrality approximation
|
van Vliet, K.M.
|
|
1966
|
9 |
3 |
p. 185-201
17 p.
|
artikel
|
| 5 |
High mobility thin films of indium antimonide vacuum deposited on to a cold substrate
|
Williamson, W.J.
|
|
1966
|
9 |
3 |
p. 213-224
12 p.
|
artikel
|
| 6 |
Measurement of resistivity and mobility in silicon epitaxial layers on a control wafer
|
Patrick, W.J.
|
|
1966
|
9 |
3 |
p. 203-211
9 p.
|
artikel
|
| 7 |
Observation of double injection in long p + p + diffused silicon junctions and some related effects
|
Deshpande, R.Y.
|
|
1966
|
9 |
3 |
p. 265-273
9 p.
|
artikel
|
| 8 |
Some computed and measured characteristics of CdS space-charge-limited diodes
|
Page, D.J.
|
|
1966
|
9 |
3 |
p. 255-264
10 p.
|
artikel
|
| 9 |
The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscope
|
Davies, I.G.
|
|
1966
|
9 |
3 |
p. 275-279
5 p.
|
artikel
|
| 10 |
The operation of graded band gap base transistors at high currents
|
Martin, D.D.
|
|
1966
|
9 |
3 |
p. 237-243
7 p.
|
artikel
|
| 11 |
The optimized performance of a thermoelectric generator with the Thomson effect
|
Shaw, David Tai-ko
|
|
1966
|
9 |
3 |
p. 282-285
4 p.
|
artikel
|
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