| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compatible in-contact masking material
|
Caspar, P.E.
|
|
1966
|
9 |
11-12 |
p. 1147-1148
2 p.
|
artikel
|
| 2 |
Characteristics of injecting point contacts on semiconductors—II
|
Braun, I.
|
|
1966
|
9 |
11-12 |
p. 1111-1117
7 p.
|
artikel
|
| 3 |
Current transport in metal-semiconductor barriers
|
Crowell, C.R.
|
|
1966
|
9 |
11-12 |
p. 1035-1048
14 p.
|
artikel
|
| 4 |
Detection characters at very high frequencies of the space-charge-limited solid-state diode
|
Dascalu, D.
|
|
1966
|
9 |
11-12 |
p. 1143-1145
3 p.
|
artikel
|
| 5 |
Diffusion of nitrogen into silicon carbide single crystals doped with aluminum
|
Kroko, L.J.
|
|
1966
|
9 |
11-12 |
p. 1125-1130
6 p.
|
artikel
|
| 6 |
Distributed superconductive oscillator and neuristor
|
Yuan, H.T.
|
|
1966
|
9 |
11-12 |
p. 1149-1150
2 p.
|
artikel
|
| 7 |
Edge emission of n-type conducting ZnO and CdS
|
Lehmann, W.
|
|
1966
|
9 |
11-12 |
p. 1107-1110
4 p.
|
artikel
|
| 8 |
Effect of nonuniform p-type base width on the forward switching voltage of diffused-alloyed thyristors
|
Knopp, A.N.
|
|
1966
|
9 |
11-12 |
p. 1119-1122
4 p.
|
artikel
|
| 9 |
Effect of temperature on electron emission from semiconductor p-n junctions
|
Hodgkinson, R.J.
|
|
1966
|
9 |
11-12 |
p. 1140-1142
3 p.
|
artikel
|
| 10 |
Electrochemically deposited Schottky contacts on GaAs
|
Dörbeck, F.H.
|
|
1966
|
9 |
11-12 |
p. 1135-1136
2 p.
|
artikel
|
| 11 |
Forward characteristics of thyristors in the fired state
|
Herlet, A.
|
|
1966
|
9 |
11-12 |
p. 1089-1105
17 p.
|
artikel
|
| 12 |
H.F. thermal noise in space-charge-limited solid-state diodes
|
van der Ziel, A.
|
|
1966
|
9 |
11-12 |
p. 1139-1140
2 p.
|
artikel
|
| 13 |
Indium contacts on CdS
|
Scholten, P.C.
|
|
1966
|
9 |
11-12 |
p. 1142-1143
2 p.
|
artikel
|
| 14 |
Low resistivity epitaxial layers of silicon
|
Thomas, H.
|
|
1966
|
9 |
11-12 |
p. 1137-1139
3 p.
|
artikel
|
| 15 |
Metal-semiconductor surface barriers
|
Mead, C.A.
|
|
1966
|
9 |
11-12 |
p. 1023-1033
11 p.
|
artikel
|
| 16 |
Neutron induced displacement number in silicon
|
Drain, D.
|
|
1966
|
9 |
11-12 |
p. 1081-1087
7 p.
|
artikel
|
| 17 |
nGepGaAs Heterojunctions
|
Riben, A.R.
|
|
1966
|
9 |
11-12 |
p. 1055-1065
11 p.
|
artikel
|
| 18 |
Simple expression for storage time of arbitrary base diode
|
Davidson, L.A.
|
|
1966
|
9 |
11-12 |
p. 1145-1147
3 p.
|
artikel
|
| 19 |
Spontaneous fluctuations in the leakage current due to charge generation and recombination in semiconductor diodes
|
Scott, L.
|
|
1966
|
9 |
11-12 |
p. 1067-1073
7 p.
|
artikel
|
| 20 |
Threshold dependency on photon energy in GaAs laser diodes
|
Lamorte, M.F.
|
|
1966
|
9 |
11-12 |
p. 1075-1079
5 p.
|
artikel
|
| 21 |
Vapor phase growth of gallium arsenide microwave diodes
|
Tietjen, J.J.
|
|
1966
|
9 |
11-12 |
p. 1049-1050
2 p.
|
artikel
|
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