| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characteristics of the metal-oxide-semiconductor transistor in the common-gate electrode arrangement
|
Lukeš, Zdeněk
|
|
1966
|
9 |
1 |
p. 21-27
7 p.
|
artikel
|
| 2 |
Conclusions from channel conductance measurements on silicon rectifiers
|
Dannhäuser, F.
|
|
1966
|
9 |
1 |
p. 90-91
2 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
1966
|
9 |
1 |
p. IFC-
1 p.
|
artikel
|
| 4 |
Equivalent circuit and gain of MOS field effect transistors
|
Fischer, W.
|
|
1966
|
9 |
1 |
p. 71-81
11 p.
|
artikel
|
| 5 |
Field effect enhancement of thermoluminescence
|
Miyashita, K.
|
|
1966
|
9 |
1 |
p. 29-33
5 p.
|
artikel
|
| 6 |
Formed-point-contact gallium arsenide backward diodes for millimeter-wave applications
|
Burrus, C.A.
|
|
1966
|
9 |
1 |
p. 49-58
10 p.
|
artikel
|
| 7 |
High speed diffused-alloyed silicon tunnel diodes
|
Hornung, H.
|
|
1966
|
9 |
1 |
p. 7-12
6 p.
|
artikel
|
| 8 |
Network theory
|
Berktay, H.O.
|
|
1966
|
9 |
1 |
p. 93-
1 p.
|
artikel
|
| 9 |
Radiochemische untersuchungen zur diffusion von gold in silizium
|
Martin, J.
|
|
1966
|
9 |
1 |
p. 83-84
2 p.
|
artikel
|
| 10 |
Radiotracer measurements of copper contamination in GaAs from quartz
|
Gansauge, P.
|
|
1966
|
9 |
1 |
p. 89-
1 p.
|
artikel
|
| 11 |
Simultaneous diffusion of oppositely charged impurities in semiconductors
|
Klein, T.
|
|
1966
|
9 |
1 |
p. 59-69
11 p.
|
artikel
|
| 12 |
Some papers to be published in future issues
|
|
|
1966
|
9 |
1 |
p. 95-
1 p.
|
artikel
|
| 13 |
Studies of anomalous diffusion of impurities in silicon
|
Nicholas, K.H.
|
|
1966
|
9 |
1 |
p. 35-47
13 p.
|
artikel
|
| 14 |
The fabrication of molybdenum evaporation masks by scribing and etching
|
Potter, C.N.
|
|
1966
|
9 |
1 |
p. 87-88
2 p.
|
artikel
|
| 15 |
Transit time effects in the space-charge-limited silicon microwave diode
|
Wright, G.T.
|
|
1966
|
9 |
1 |
p. 1-6
6 p.
|
artikel
|
| 16 |
Two-dimensional distribution of carriers in a semiconductor space charge region with current flow
|
Jund, C.
|
|
1966
|
9 |
1 |
p. 13-16
4 p.
|
artikel
|
| 17 |
Vitreous semiconductor properties and the average heat of atomization
|
Sadagopan, V.
|
|
1966
|
9 |
1 |
p. 17-19
3 p.
|
artikel
|
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