| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive model for the diffusion of boron in silicon in presence of fluorine
|
Alexander Wolf, F.
|
|
2013
|
87 |
C |
p. 4-10
7 p.
|
artikel
|
| 2 |
Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si
|
Sarafis, P.
|
|
2013
|
87 |
C |
p. 27-33
7 p.
|
artikel
|
| 3 |
A resistive-type sensor based on flexible multi-walled carbon nanotubes and polyacrylic acid composite films
|
Lee, Jeongah
|
|
2013
|
87 |
C |
p. 80-84
5 p.
|
artikel
|
| 4 |
A study of donor/acceptor interfaces in a blend of P3HT/PCBM solar cell: Effects of annealing and PCBM loading on optical and electrical properties
|
Oklobia, O.
|
|
2013
|
87 |
C |
p. 64-68
5 p.
|
artikel
|
| 5 |
A systematic approach for hydrodynamic model calibration in the quasi-ballistic regime
|
Shih, Kun-Huan
|
|
2013
|
87 |
C |
p. 90-97
8 p.
|
artikel
|
| 6 |
Back biasing effects in tri-gate junctionless transistors
|
Park, So Jeong
|
|
2013
|
87 |
C |
p. 74-79
6 p.
|
artikel
|
| 7 |
Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices
|
Wong, Franklin J.
|
|
2013
|
87 |
C |
p. 21-26
6 p.
|
artikel
|
| 8 |
Charge based DC compact modeling of bulk FinFET transistor
|
Cerdeira, A.
|
|
2013
|
87 |
C |
p. 11-16
6 p.
|
artikel
|
| 9 |
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN x -film for early-protection against oxidation
|
Moschetti, Giuseppe
|
|
2013
|
87 |
C |
p. 85-89
5 p.
|
artikel
|
| 10 |
Development of an ethanol sensor based on CBD grown ZnO nanorods
|
Roy, S.
|
|
2013
|
87 |
C |
p. 43-50
8 p.
|
artikel
|
| 11 |
Editorial Board
|
|
|
2013
|
87 |
C |
p. IFC-
1 p.
|
artikel
|
| 12 |
Effect of sol–gel ZnO spin-coating on the performance of TiO2-based dye-sensitized solar cell
|
Al-juaid, Fahd
|
|
2013
|
87 |
C |
p. 98-103
6 p.
|
artikel
|
| 13 |
Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach
|
Deng, Wanling
|
|
2013
|
87 |
C |
p. 69-73
5 p.
|
artikel
|
| 14 |
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
|
Shi, Ming
|
|
2013
|
87 |
C |
p. 51-57
7 p.
|
artikel
|
| 15 |
Numerical investigation of Auger contributed performance loss in long wavelength infrared HgCdTe photodiodes
|
Kocer, H.
|
|
2013
|
87 |
C |
p. 58-63
6 p.
|
artikel
|
| 16 |
p/i/n-Type poly-Si thin-film transistor for quasi-static capacitance–voltage measurement
|
Kimura, Mutsumi
|
|
2013
|
87 |
C |
p. 1-3
3 p.
|
artikel
|
| 17 |
Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain
|
Münzenrieder, Niko
|
|
2013
|
87 |
C |
p. 17-20
4 p.
|
artikel
|
| 18 |
Single and compact ESD device Beta-Matrix solution based on bidirectional SCR Network in advanced 28/32 nm technology node
|
Bourgeat, Johan
|
|
2013
|
87 |
C |
p. 34-42
9 p.
|
artikel
|
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