| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip
|
Wang, J.H.
|
|
2013
|
81 |
C |
p. 157-162
6 p.
|
artikel
|
| 2 |
Analysis of temperature effect on a-Si:H thin film transistors
|
Qiang, L.
|
|
2013
|
81 |
C |
p. 13-18
6 p.
|
artikel
|
| 3 |
Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G4-FETs)
|
Sayed, Shehrin
|
|
2013
|
81 |
C |
p. 105-112
8 p.
|
artikel
|
| 4 |
A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors
|
Jeon, D.-Y.
|
|
2013
|
81 |
C |
p. 113-118
6 p.
|
artikel
|
| 5 |
An improved model for InP/InGaAs double heterojunction bipolar transistors
|
Shi, Yuxia
|
|
2013
|
81 |
C |
p. 163-169
7 p.
|
artikel
|
| 6 |
Characterization and modeling of low frequency noise in CMOS inverters
|
Ioannidis, E.G.
|
|
2013
|
81 |
C |
p. 151-156
6 p.
|
artikel
|
| 7 |
Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method
|
Marcelot, O.
|
|
2013
|
81 |
C |
p. 135-139
5 p.
|
artikel
|
| 8 |
Design of emitter ledge for thermal stability of AlGaAs/GaAs heterojunction bipolar transistors
|
Lim, H.W.
|
|
2013
|
81 |
C |
p. 5-7
3 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2013
|
81 |
C |
p. IFC-
1 p.
|
artikel
|
| 10 |
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric
|
Tsui, Bing-Yue
|
|
2013
|
81 |
C |
p. 119-123
5 p.
|
artikel
|
| 11 |
Effect of two yellow delta-emitting layers on device performance of phosphorescent white organic light-emitting devices
|
Zhao, Juan
|
|
2013
|
81 |
C |
p. 63-67
5 p.
|
artikel
|
| 12 |
Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors
|
Jeon, Dae-Young
|
|
2013
|
81 |
C |
p. 58-62
5 p.
|
artikel
|
| 13 |
Effects of geometry parameters of NTFET devices on the I–V measurements
|
Justino, Celine I.L.
|
|
2013
|
81 |
C |
p. 32-34
3 p.
|
artikel
|
| 14 |
Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrates
|
Ha, Min-Woo
|
|
2013
|
81 |
C |
p. 1-4
4 p.
|
artikel
|
| 15 |
Effects of the solvent polarity of a polymeric insulator on field-effect mobility in an organic thin-film transistor
|
Kim, Hyeok
|
|
2013
|
81 |
C |
p. 140-143
4 p.
|
artikel
|
| 16 |
Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
|
Shtepliuk, I.
|
|
2013
|
81 |
C |
p. 72-77
6 p.
|
artikel
|
| 17 |
×10 Fast write, 80% energy saving temperature controlling set method for multi-level cell phase change memories to solve the scaling blockade
|
Johguchi, Koh
|
|
2013
|
81 |
C |
p. 78-85
8 p.
|
artikel
|
| 18 |
High efficiency and high power continuous-wave semiconductor terahertz lasers at ∼3.1THz
|
Liu, Junqi
|
|
2013
|
81 |
C |
p. 68-71
4 p.
|
artikel
|
| 19 |
Improved empirical non-linear compact model for studying intermodulation in HEMTs and LDMOSFETs
|
Sadi, Toufik
|
|
2013
|
81 |
C |
p. 91-100
10 p.
|
artikel
|
| 20 |
Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors
|
Jeon, Dae-Young
|
|
2013
|
81 |
C |
p. 101-104
4 p.
|
artikel
|
| 21 |
Measurement of effective carrier lifetime at the semiconductor–dielectric interface by Photoconductive Decay (PCD) Method
|
Drummond, P.J.
|
|
2013
|
81 |
C |
p. 130-134
5 p.
|
artikel
|
| 22 |
MOSFET gate dimension dependent drain and source leakage modeling by standard SPICE models
|
Paňko, Václav
|
|
2013
|
81 |
C |
p. 144-150
7 p.
|
artikel
|
| 23 |
Numerical simulation and characterization of trapping noise in InGaP–GaAs heterojunctions devices at high injection
|
Nallatamby, Jean-Christophe
|
|
2013
|
81 |
C |
p. 35-44
10 p.
|
artikel
|
| 24 |
Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS
|
Zhang, Shifeng
|
|
2013
|
81 |
C |
p. 27-31
5 p.
|
artikel
|
| 25 |
Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation
|
Ioannou-Sougleridis, Vassilios
|
|
2013
|
81 |
C |
p. 19-26
8 p.
|
artikel
|
| 26 |
Solution based-spin cast processed organic bistable memory device
|
Ramana, CH.V.V.
|
|
2013
|
81 |
C |
p. 45-50
6 p.
|
artikel
|
| 27 |
Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method
|
Liao, Jeng-Hwa
|
|
2013
|
81 |
C |
p. 51-57
7 p.
|
artikel
|
| 28 |
Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs
|
Darbandy, Ghader
|
|
2013
|
81 |
C |
p. 124-129
6 p.
|
artikel
|
| 29 |
The effect of different dicing methods on the leakage currents of n-type silicon diodes and strip sensors
|
Christophersen, M.
|
|
2013
|
81 |
C |
p. 8-12
5 p.
|
artikel
|
| 30 |
Transfer-free grown bilayer graphene transistors for digital applications
|
Wessely, Pia Juliane
|
|
2013
|
81 |
C |
p. 86-90
5 p.
|
artikel
|
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