| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Über die Abhängigkeit der Widerstandsschwankungen ρmax/ρmin vom Dotierstoff bei tiegelgezogenen Si-Kristallen
|
Mühlbauer, A.
|
|
1965
|
8 |
6 |
p. 543-549
7 p.
|
artikel
|
| 2 |
Calculation of high-frequency characteristics of field-effect transistors
|
Geurst, J.A.
|
|
1965
|
8 |
6 |
p. 563-566
4 p.
|
artikel
|
| 3 |
Heterojunction properties of the oxidised semiconductor
|
Lindmayer, J.
|
|
1965
|
8 |
6 |
p. 523-528
6 p.
|
artikel
|
| 4 |
Laser efficiency at high pump levels
|
Scott, A.C.
|
|
1965
|
8 |
6 |
p. 551-561
11 p.
|
artikel
|
| 5 |
Network analysis
|
Howson, D.P.
|
|
1965
|
8 |
6 |
p. 569-
1 p.
|
artikel
|
| 6 |
On Tantraporn's determination of the electron effective mass in Al2O3
|
Simmons, J.G.
|
|
1965
|
8 |
6 |
p. 566-567
2 p.
|
artikel
|
| 7 |
On the relationship of semiconductor compound properties and the average heats of atomisation
|
Sadagopan, V.
|
|
1965
|
8 |
6 |
p. 529-534
6 p.
|
artikel
|
| 8 |
Reply to Simmons' comment: “On Tantraporn's determination of the electron effective mass in Al2O3”
|
Tantraporn, W.
|
|
1965
|
8 |
6 |
p. 567-
1 p.
|
artikel
|
| 9 |
Surface charge on silicon induced by ambient ionisation
|
Estrup, P.J.
|
|
1965
|
8 |
6 |
p. 535-541
7 p.
|
artikel
|
| 10 |
The direct observation of dislocations
|
Billig, E.
|
|
1965
|
8 |
6 |
p. 569-570
2 p.
|
artikel
|
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