| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of traveling-wave ultrasonic amplification in solids by resistive and resonant processes
|
Carleton, H.R.
|
|
1965
|
8 |
3 |
p. 285-294
10 p.
|
artikel
|
| 2 |
An alloy process for making high current density silicon tunnel diode junctions
|
Franks, V.M.
|
|
1965
|
8 |
3 |
p. 343-344
2 p.
|
artikel
|
| 3 |
Breakdown characteristics and light emissions observed on silicon alloyed pn junctions
|
Migitaka, M.
|
|
1965
|
8 |
3 |
p. 295-298
4 p.
|
artikel
|
| 4 |
Determination of the intrinsic density of silicon below the temperature of intrinsic conduction from electric measurements on transistors
|
Benda, H.
|
|
1965
|
8 |
3 |
p. 189-210
22 p.
|
artikel
|
| 5 |
Die galvano- und thermomagnetischen effekte des InSbNiSbEutektikums
|
Wagini, H.
|
|
1965
|
8 |
3 |
p. 241-254
14 p.
|
artikel
|
| 6 |
Double diffused gallium arsenide transistors
|
Becke, H.
|
|
1965
|
8 |
3 |
p. 255-265
11 p.
|
artikel
|
| 7 |
Effect of surface traps on characteristics of insulated-gate field-effect transistors
|
O'Reilly, T.J.
|
|
1965
|
8 |
3 |
p. 267-274
8 p.
|
artikel
|
| 8 |
Magnetoresistance of InSbNiSb at microwave frequency
|
Sun, S.F.
|
|
1965
|
8 |
3 |
p. 344-346
3 p.
|
artikel
|
| 9 |
Minority carrier injection and charge storage in epitaxial Schottky barrier diodes
|
Scharfetter, D.L.
|
|
1965
|
8 |
3 |
p. 299-311
13 p.
|
artikel
|
| 10 |
Physical limitations on the frequency response of a semiconductor surface inversion layer
|
Hofstein, S.R.
|
|
1965
|
8 |
3 |
p. 321-341
21 p.
|
artikel
|
| 11 |
Physics of III–V compounds
|
Dunlap, W.Crawford
|
|
1965
|
8 |
3 |
p. 347-348
2 p.
|
artikel
|
| 12 |
P + IN + silicon diodes at high forward current densities
|
Howard, N.R.
|
|
1965
|
8 |
3 |
p. 275-284
10 p.
|
artikel
|
| 13 |
Structural and operational characteristics of piezo-transistors and allied devices
|
Rindner, W.
|
|
1965
|
8 |
3 |
p. 227-240
14 p.
|
artikel
|
| 14 |
Surface capacity of oxide coated semiconductors
|
Hall, R.
|
|
1965
|
8 |
3 |
p. 211-226
16 p.
|
artikel
|
| 15 |
The effect of ambients on the charge density and carrier mobility in a silicon-silicon dioxide interface
|
Deshpande, R.Y.
|
|
1965
|
8 |
3 |
p. 313-319
7 p.
|
artikel
|
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