| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A technique for making alloy p-n junctions in InSb
|
Barber, H.D.
|
|
1965
|
8 |
2 |
p. 113-114
2 p.
|
artikel
|
| 2 |
Capacitance-voltage dependence of zinc-diffused GaAs p-n junctions
|
Aukerman, L.W.
|
|
1965
|
8 |
2 |
p. 119-127
9 p.
|
artikel
|
| 3 |
Design of a thermoelectric cooling unit for non-ideal operating conditions
|
Goldsmid, H.J.
|
|
1965
|
8 |
2 |
p. 109-112
4 p.
|
artikel
|
| 4 |
Dielectrics
|
Hill, N.E.
|
|
1965
|
8 |
2 |
p. 186-
1 p.
|
artikel
|
| 5 |
Dislocations
|
Pincherle, L.
|
|
1965
|
8 |
2 |
p. 185-186
2 p.
|
artikel
|
| 6 |
Einige möglichkeiten zur änderung des übertragungsfaktors eines mikrowellendurchgangselementes
|
Paul, Martin
|
|
1965
|
8 |
2 |
p. 137-143
7 p.
|
artikel
|
| 7 |
Erratum
|
|
|
1965
|
8 |
2 |
p. 187-
1 p.
|
artikel
|
| 8 |
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
|
Grove, A.S.
|
|
1965
|
8 |
2 |
p. 145-163
19 p.
|
artikel
|
| 9 |
Measurement of resistivity of silicon epitaxial layers by the three-point probe technique
|
Gardner, E.E.
|
|
1965
|
8 |
2 |
p. 165-170
6 p.
|
artikel
|
| 10 |
Measurements of the channel-conductivity of Si-rectifiers
|
Dannhäuser, F.
|
|
1965
|
8 |
2 |
p. 103-108
6 p.
|
artikel
|
| 11 |
On approximate thermionic and field emission equations
|
Stratton, R.
|
|
1965
|
8 |
2 |
p. 175-177
3 p.
|
artikel
|
| 12 |
Reply to Dr. Stratton's comment: On approximate thermionic and field emission equations
|
Tantraporn, W.
|
|
1965
|
8 |
2 |
p. 177-178
2 p.
|
artikel
|
| 13 |
Space-charge-limited currents in solids for various geometries and field-dependent mobility
|
Lee, D.H.
|
|
1965
|
8 |
2 |
p. 182-184
3 p.
|
artikel
|
| 14 |
The formation of p-n-p structures around dislocations in silicon
|
Newman, R.C.
|
|
1965
|
8 |
2 |
p. 180-in8
nvt p.
|
artikel
|
| 15 |
Theory of width independence for the continuous sheet memory cell
|
Richardson, J.R.
|
|
1965
|
8 |
2 |
p. 95-102
8 p.
|
artikel
|
| 16 |
The preparation of high purity gallium arsenide by vapour phase epitaxial growth
|
Knight, J.R.
|
|
1965
|
8 |
2 |
p. 178-180
3 p.
|
artikel
|
| 17 |
Zum aufbau der sperrschichten in kaltleitendem bariumtitanat
|
Heywang, W.
|
|
1965
|
8 |
2 |
p. 129-132
4 p.
|
artikel
|
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