| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A modified thermoelectric method for determining the conductivity type of high resistivity silicon carbide crystals
|
Kroko, L.J.
|
|
1965
|
8 |
10 |
p. 829-830
2 p.
|
artikel
|
| 2 |
Carrier recombination in gallium arsenide
|
Kinsel, T.
|
|
1965
|
8 |
10 |
p. 797-801
5 p.
|
artikel
|
| 3 |
Diffusion lengths in epitaxial GaAs by angle lapped junction method
|
Norwood, M.H.
|
|
1965
|
8 |
10 |
p. 807-810
4 p.
|
artikel
|
| 4 |
Double diffused pnp GaAs transistor
|
Statz, H.
|
|
1965
|
8 |
10 |
p. 827-828
2 p.
|
artikel
|
| 5 |
Electrical contacts to silicon
|
Hooper, R.C.
|
|
1965
|
8 |
10 |
p. 831-833
3 p.
|
artikel
|
| 6 |
Electro-optic observation of space charge effects in gallium arsenide
|
Smith, A.W.
|
|
1965
|
8 |
10 |
p. 833-835
3 p.
|
artikel
|
| 7 |
Gallium arsenide MOS transistors
|
Becke, H.
|
|
1965
|
8 |
10 |
p. 813-818
6 p.
|
artikel
|
| 8 |
Hexagonal CdCl2 deposites on HCl-etched CdS films
|
Conragan, M.L.
|
|
1965
|
8 |
10 |
p. 830-in12
nvt p.
|
artikel
|
| 9 |
Measurements of transmitted phonon drag in silicon at 4.2°K
|
Gereth, R.
|
|
1965
|
8 |
10 |
p. 789-792
4 p.
|
artikel
|
| 10 |
Relation between channel conductance and characteristics of thin-film transistors
|
de Graaff, H.C.
|
|
1965
|
8 |
10 |
p. 835-837
3 p.
|
artikel
|
| 11 |
Semiconductor Electronics
|
Billig, E.
|
|
1965
|
8 |
10 |
p. 838-
1 p.
|
artikel
|
| 12 |
Solid state inductors
|
Josephs, H.C.
|
|
1965
|
8 |
10 |
p. 775-788
14 p.
|
artikel
|
| 13 |
The solubility of indium antimonide in tin
|
Papadakis, A.C.
|
|
1965
|
8 |
10 |
p. 825-827
3 p.
|
artikel
|
| 14 |
Visible electroluminescence from the base-emitter p-n junction of an avalanching silicon transistor
|
van Wyk, J.D.
|
|
1965
|
8 |
10 |
p. 803-804
2 p.
|
artikel
|
Tijdschrift beschrijving