nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A.C. behavior of damaged surface layers on CdS crystals
|
Loh, Eugene |
|
1964 |
7 |
12 |
p. 887-894 8 p. |
artikel |
2 |
Berechnung eines integrals beim zenereffekt
|
Pfirsch, Dieter |
|
1964 |
7 |
12 |
p. 843-847 5 p. |
artikel |
3 |
Biophysical science
|
Pandiscio, Alfred A. |
|
1964 |
7 |
12 |
p. 943-944 2 p. |
artikel |
4 |
Characteristics of silicon p-n junctions formed by sodium and cesium ion bombardment
|
Waldner, M. |
|
1964 |
7 |
12 |
p. 925-931 7 p. |
artikel |
5 |
Die polarisierende wirkung von zweiphasigem indiumantimonid im ultraroten
|
Paul, B. |
|
1964 |
7 |
12 |
p. 835-841 7 p. |
artikel |
6 |
Effect of temperature on the stimulated emission from GaAs p-n junctions
|
Pilkuhn, M. |
|
1964 |
7 |
12 |
p. 905-909 5 p. |
artikel |
7 |
Electronic properties of diamonds
|
Leivo, W.J. |
|
1964 |
7 |
12 |
p. 942- 1 p. |
artikel |
8 |
Erratum
|
|
|
1964 |
7 |
12 |
p. 945- 1 p. |
artikel |
9 |
Injection electroluminescence in metal-semiconductor tunnel diodes
|
Eastman, P.C. |
|
1964 |
7 |
12 |
p. 879-885 7 p. |
artikel |
10 |
Magnetostatic principles in ferromagnetism, vol. 1
|
Rosenberg, R. |
|
1964 |
7 |
12 |
p. 938-939 2 p. |
artikel |
11 |
Microwave solid-state masers
|
Schulz-Du Bois, E.O. |
|
1964 |
7 |
12 |
p. 941-942 2 p. |
artikel |
12 |
Physical processes in insulated-gate field-effect transistors
|
Johnson, J.E. |
|
1964 |
7 |
12 |
p. 861-871 11 p. |
artikel |
13 |
Physics and chemistry of ceramics
|
Blum, S.L. |
|
1964 |
7 |
12 |
p. 937- 1 p. |
artikel |
14 |
Physics of thin films
|
Shapiro, Sidney |
|
1964 |
7 |
12 |
p. 937-938 2 p. |
artikel |
15 |
Physik und technik der halbleiter
|
Billig, E. |
|
1964 |
7 |
12 |
p. 942-943 2 p. |
artikel |
16 |
p-n heterojunctions
|
Perlman, S.S. |
|
1964 |
7 |
12 |
p. 911-923 13 p. |
artikel |
17 |
Reduction of the turn-off delay of a germanium npn mesa by plastic deformation
|
Schumann Jr., P.A. |
|
1964 |
7 |
12 |
p. 849-851 3 p. |
artikel |
18 |
SiO2 masking against phosphorus diffusion using a P2O5 source
|
Nassibian, A.G. |
|
1964 |
7 |
12 |
p. 873-878 6 p. |
artikel |
19 |
Solid state physics for metallurgists
|
Mansfield, R. |
|
1964 |
7 |
12 |
p. 939- 1 p. |
artikel |
20 |
Some aspects of semiconducting barium titanate
|
Jonker, G.H. |
|
1964 |
7 |
12 |
p. 895-903 9 p. |
artikel |
21 |
Some properties of alloyed-junction (p-n)-(l-h) germanium diodes
|
Pultorak, Jerzy |
|
1964 |
7 |
12 |
p. 933-934 2 p. |
artikel |
22 |
Temperature dependance of thin film transistor characteristics
|
Poehler, T.O. |
|
1964 |
7 |
12 |
p. 934-935 2 p. |
artikel |
23 |
The junction depth of concentration-dependent diffusion. Zinc in III–V compounds
|
Chang, L.L. |
|
1964 |
7 |
12 |
p. 853-859 7 p. |
artikel |
24 |
Transistor electronics in instrument technology
|
Hogarth, C.A. |
|
1964 |
7 |
12 |
p. 940- 1 p. |
artikel |
25 |
Utilisation des transistors
|
Hogarth, C.A. |
|
1964 |
7 |
12 |
p. 939-940 2 p. |
artikel |