nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A general expression for electrostatic induction and its application to semiconductor devices
|
Gunn, J.B. |
|
1964 |
7 |
10 |
p. 739-742 4 p. |
artikel |
2 |
Analysis of a proposed bistable injection laser
|
Lasher, G.J. |
|
1964 |
7 |
10 |
p. 707-716 10 p. |
artikel |
3 |
An experimental determination of the carrier lifetime in p-i-n diodes from the stored carrier charge
|
Hoffmann, Arnulf |
|
1964 |
7 |
10 |
p. 717-724 8 p. |
artikel |
4 |
Extension of the theory of thin-film transistors
|
Neumark, G.F. |
|
1964 |
7 |
10 |
p. 725-732 8 p. |
artikel |
5 |
Facet effect and electrical conductivity in undoped pulled GaSb crystals
|
van der Meulen, Y.J. |
|
1964 |
7 |
10 |
p. 767-769 3 p. |
artikel |
6 |
Measurement of tunnel diode capacitance vs. voltage by switching techniques
|
Lanza, Conrad |
|
1964 |
7 |
10 |
p. 733-738 6 p. |
artikel |
7 |
On SiC contamination of silicon epitaxial wafer
|
Sato, Kenzo |
|
1964 |
7 |
10 |
p. 743-753 11 p. |
artikel |
8 |
Some properties of aluminium antimonide p-n junctions
|
Bemrose, C.R. |
|
1964 |
7 |
10 |
p. 763-765 3 p. |
artikel |
9 |
Thickness measurement of silicon dioxide layers by ultraviolet-visible interference method
|
Corl, Edwin A. |
|
1964 |
7 |
10 |
p. 755-761 7 p. |
artikel |
10 |
Transistor having double base regions
|
Tohma, Y. |
|
1964 |
7 |
10 |
p. 765-767 3 p. |
artikel |