| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs
|
García-Sánchez, F.J.
|
|
2011
|
63 |
1 |
p. 22-26
5 p.
|
artikel
|
| 2 |
A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes
|
Radhakrishnan, Rahul
|
|
2011
|
63 |
1 |
p. 167-176
10 p.
|
artikel
|
| 3 |
Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric
|
Cho, Moonju
|
|
2011
|
63 |
1 |
p. 5-7
3 p.
|
artikel
|
| 4 |
Analytical modeling of flicker and thermal noise in n-channel DG FinFETs
|
Pandit, Srabanti
|
|
2011
|
63 |
1 |
p. 177-183
7 p.
|
artikel
|
| 5 |
Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs)
|
Lee, Min Jin
|
|
2011
|
63 |
1 |
p. 110-114
5 p.
|
artikel
|
| 6 |
A software tool for the design of high power PiN diodes based on the numerical study of the reverse characteristics
|
Cova, P.
|
|
2011
|
63 |
1 |
p. 60-69
10 p.
|
artikel
|
| 7 |
A straightforward method to extract the shunt resistance of photovoltaic cells from current–voltage characteristics of mounted arrays
|
d’Alessandro, Vincenzo
|
|
2011
|
63 |
1 |
p. 130-136
7 p.
|
artikel
|
| 8 |
Au/CaF2/nSi(111) tunnel emitter phototransistor
|
Vexler, M.I.
|
|
2011
|
63 |
1 |
p. 19-21
3 p.
|
artikel
|
| 9 |
Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects
|
Zaka, A.
|
|
2011
|
63 |
1 |
p. 158-162
5 p.
|
artikel
|
| 10 |
Charge carrier injection and transport associated with thermally generated cracks in a 6,13-bis(triisopropylsilylethynyl) pentacene thin-film transistor
|
Bae, Jin-Hyuk
|
|
2011
|
63 |
1 |
p. 163-166
4 p.
|
artikel
|
| 11 |
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
|
Schwarz, Mike
|
|
2011
|
63 |
1 |
p. 119-129
11 p.
|
artikel
|
| 12 |
Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement
|
Gao, Jianjun
|
|
2011
|
63 |
1 |
p. 42-48
7 p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
2011
|
63 |
1 |
p. IFC-
1 p.
|
artikel
|
| 14 |
Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory
|
Sung, Min-Gyu
|
|
2011
|
63 |
1 |
p. 115-118
4 p.
|
artikel
|
| 15 |
Efficiency improvement of polymer solar cells by iodine doping
|
Zhuo, Zuliang
|
|
2011
|
63 |
1 |
p. 83-88
6 p.
|
artikel
|
| 16 |
Expanded graphite/pencil-lead as counter electrode for dye-sensitized solar cells
|
Wei, Yan-Shuang
|
|
2011
|
63 |
1 |
p. 76-82
7 p.
|
artikel
|
| 17 |
Extraction of trap densities in entire bandgap of poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on process conditions of post annealing
|
Kimura, Mutsumi
|
|
2011
|
63 |
1 |
p. 94-99
6 p.
|
artikel
|
| 18 |
Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors
|
Tsai, Shu-Yi
|
|
2011
|
63 |
1 |
p. 37-41
5 p.
|
artikel
|
| 19 |
Highly controllable dual-gate microcrystalline silicon thin film transistor processed at low temperature (T
<180°C)
|
Kandoussi, K.
|
|
2011
|
63 |
1 |
p. 140-144
5 p.
|
artikel
|
| 20 |
Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress
|
Taso, S.W.
|
|
2011
|
63 |
1 |
p. 55-59
5 p.
|
artikel
|
| 21 |
Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs
|
Cuerdo, R.
|
|
2011
|
63 |
1 |
p. 184-188
5 p.
|
artikel
|
| 22 |
LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric
|
Lukyanchikova, N.
|
|
2011
|
63 |
1 |
p. 27-36
10 p.
|
artikel
|
| 23 |
Miniature and tunable millimeter-wave lowpass filter with MEMS switch
|
Guo, X.L.
|
|
2011
|
63 |
1 |
p. 145-148
4 p.
|
artikel
|
| 24 |
Modeling of current–voltage characteristics of thin film solar cells
|
Mannan, M.A.
|
|
2011
|
63 |
1 |
p. 49-54
6 p.
|
artikel
|
| 25 |
Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley–Read–Hall centres
|
Jóźwikowski, K.
|
|
2011
|
63 |
1 |
p. 8-13
6 p.
|
artikel
|
| 26 |
Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach
|
Benbakhti, Brahim
|
|
2011
|
63 |
1 |
p. 14-18
5 p.
|
artikel
|
| 27 |
Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I–V method
|
Constant, A.
|
|
2011
|
63 |
1 |
p. 70-75
6 p.
|
artikel
|
| 28 |
Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers
|
Fuentes-Fernandez, E.
|
|
2011
|
63 |
1 |
p. 89-93
5 p.
|
artikel
|
| 29 |
Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells
|
Lin, S.
|
|
2011
|
63 |
1 |
p. 105-109
5 p.
|
artikel
|
| 30 |
Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior
|
Jeong, Doo Seok
|
|
2011
|
63 |
1 |
p. 1-4
4 p.
|
artikel
|
| 31 |
Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications
|
Tang, M.H.
|
|
2011
|
63 |
1 |
p. 100-104
5 p.
|
artikel
|
| 32 |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
|
Huang, Sheng-Yao
|
|
2011
|
63 |
1 |
p. 189-191
3 p.
|
artikel
|
| 33 |
Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications
|
Bhattacharya, Monika
|
|
2011
|
63 |
1 |
p. 149-153
5 p.
|
artikel
|
| 34 |
Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films
|
Kimura, Mutsumi
|
|
2011
|
63 |
1 |
p. 137-139
3 p.
|
artikel
|
| 35 |
The optimization of deep trench isolation structure for high voltage devices on SOI substrate
|
Qian, Qinsong
|
|
2011
|
63 |
1 |
p. 154-157
4 p.
|
artikel
|
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