| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytic expression for the Fowler–Nordheim V–I characteristic including the series resistance effect
|
Miranda, E.
|
|
2011
|
61 |
1 |
p. 93-95
3 p.
|
artikel
|
| 2 |
Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation
|
Ouyang, Yijian
|
|
2011
|
61 |
1 |
p. 18-22
5 p.
|
artikel
|
| 3 |
Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs
|
Bengi, A.
|
|
2011
|
61 |
1 |
p. 29-32
4 p.
|
artikel
|
| 4 |
A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis
|
Salimy, Siamak
|
|
2011
|
61 |
1 |
p. 38-45
8 p.
|
artikel
|
| 5 |
Characterization of laser carved micro channel polycrystalline silicon solar cell
|
Chen, Hsin-Chien
|
|
2011
|
61 |
1 |
p. 23-28
6 p.
|
artikel
|
| 6 |
Current–voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination
|
Tsai, Chia-Lung
|
|
2011
|
61 |
1 |
p. 116-120
5 p.
|
artikel
|
| 7 |
DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region
|
Chang, Yang-Hua
|
|
2011
|
61 |
1 |
p. 69-75
7 p.
|
artikel
|
| 8 |
Design and optimization of high voltage LDMOS transistors on 0.18μm SOI CMOS technology
|
Toulon, G.
|
|
2011
|
61 |
1 |
p. 111-115
5 p.
|
artikel
|
| 9 |
Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation
|
Huang, Sheng-Yao
|
|
2011
|
61 |
1 |
p. 96-99
4 p.
|
artikel
|
| 10 |
Digital signal propagation delay in a nano-circuit containing reactive and resistive elements
|
Arora, Vijay K.
|
|
2011
|
61 |
1 |
p. 87-92
6 p.
|
artikel
|
| 11 |
3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs
|
David, J.K.
|
|
2011
|
61 |
1 |
p. 7-12
6 p.
|
artikel
|
| 12 |
Editorial Board
|
|
|
2011
|
61 |
1 |
p. IFC-
1 p.
|
artikel
|
| 13 |
Effect of rapid thermal annealing on pentacene-based thin-film transistors
|
Chou, D.W.
|
|
2011
|
61 |
1 |
p. 76-80
5 p.
|
artikel
|
| 14 |
GaAs HEMT as sensitive strain gauge
|
Liu, Jun
|
|
2011
|
61 |
1 |
p. 53-57
5 p.
|
artikel
|
| 15 |
Improved characteristics for Pd nanocrystal memory with stacked HfAlO–SiO2 tunnel layer
|
Kang, Tsung-Kuei
|
|
2011
|
61 |
1 |
p. 100-105
6 p.
|
artikel
|
| 16 |
Improve on/off ratio of organic heterojunction transistors by adopting single-sandwich configuration
|
Shi, Jianwu
|
|
2011
|
61 |
1 |
p. 65-68
4 p.
|
artikel
|
| 17 |
On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility transistor (PHEMT)
|
Huang, Chien-Chang
|
|
2011
|
61 |
1 |
p. 13-17
5 p.
|
artikel
|
| 18 |
On the electrical degradation and green band formation in α- and β-phase poly(9,9-dioctyfluorene) polymer light-emitting diodes
|
Arredondo, B.
|
|
2011
|
61 |
1 |
p. 46-52
7 p.
|
artikel
|
| 19 |
Origin of low-frequency noise in pentacene field-effect transistors
|
Xu, Yong
|
|
2011
|
61 |
1 |
p. 106-110
5 p.
|
artikel
|
| 20 |
Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs
|
You, Shuzhen
|
|
2011
|
61 |
1 |
p. 81-86
6 p.
|
artikel
|
| 21 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time
|
Ramirez-Garcia, E.
|
|
2011
|
61 |
1 |
p. 58-64
7 p.
|
artikel
|
| 22 |
The effects of active layer thickness on Programmable Metallization Cell based on Ag–Ge–S
|
Wang, F.
|
|
2011
|
61 |
1 |
p. 33-37
5 p.
|
artikel
|
| 23 |
Thermal effects in AlGaN/GaN/Si high electron mobility transistors
|
Saidi, I.
|
|
2011
|
61 |
1 |
p. 1-6
6 p.
|
artikel
|
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