| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A.C. impedance of semiconductor-insulator-metal capacitors
|
Lehovec, K.
|
|
1963
|
6 |
5 |
p. 536-539
4 p.
|
artikel
|
| 2 |
A new type of photosensitive junction device
|
Morrison, S.R.
|
|
1963
|
6 |
5 |
p. 485-494
10 p.
|
artikel
|
| 3 |
Antimony concentration in Germanium in equilibrium with the vapor from a bismuth-antimony alloy
|
Lehovec, K.
|
|
1963
|
6 |
5 |
p. 435-444
10 p.
|
artikel
|
| 4 |
A simple technique for the fabrication of experimental evaporation masks
|
Potter, C.N.
|
|
1963
|
6 |
5 |
p. 533-534
2 p.
|
artikel
|
| 5 |
Basic limits on the properties of field-effect transistors
|
Richer, I.
|
|
1963
|
6 |
5 |
p. 539-542
4 p.
|
artikel
|
| 6 |
Books received
|
|
|
1963
|
6 |
5 |
p. 553-
1 p.
|
artikel
|
| 7 |
Coherent light emission from p-n junctions
|
Hall, R.N.
|
|
1963
|
6 |
5 |
p. 405-408
4 p.
|
artikel
|
| 8 |
Comment on proposed barriers in thin film TiO2 diodes
|
Magill, P.J.
|
|
1963
|
6 |
5 |
p. 531-532
2 p.
|
artikel
|
| 9 |
Conference notice
|
|
|
1963
|
6 |
5 |
p. 554-
1 p.
|
artikel
|
| 10 |
Direct observation of the high-field regions in GaAs
|
Thornton, P.R.
|
|
1963
|
6 |
5 |
p. 532-
1 p.
|
artikel
|
| 11 |
Editor's note
|
|
|
1963
|
6 |
5 |
p. ii-
1 p.
|
artikel
|
| 12 |
Electromagnetic theory of the semi-conductor junction laser
|
McWhorter, A.L.
|
|
1963
|
6 |
5 |
p. 417-423
7 p.
|
artikel
|
| 13 |
Encyclopedia of electronics
|
Crawford Dunlap, W.
|
|
1963
|
6 |
5 |
p. 552-
1 p.
|
artikel
|
| 14 |
Explanation of ultra high current gain in silicon transistors
|
Rosenbaum, S.D.
|
|
1963
|
6 |
5 |
p. 545-546
2 p.
|
artikel
|
| 15 |
High speed analog computers
|
Shapirü, Eugene
|
|
1963
|
6 |
5 |
p. 551-552
2 p.
|
artikel
|
| 16 |
Impulse and step function response of exponentially tapered, distributed, RC regions
|
Maupin, J.T.
|
|
1963
|
6 |
5 |
p. 523-529
7 p.
|
artikel
|
| 17 |
Injection electroluminescence in GaAsGaP diodes
|
San-Mei Ku,
|
|
1963
|
6 |
5 |
p. 505-506
2 p.
|
artikel
|
| 18 |
Letter to the editor
|
Waldron, R.A.
|
|
1963
|
6 |
5 |
p. 547-548
2 p.
|
artikel
|
| 19 |
Limits on the power-law exponent for field-effect transistor transfer characteristics
|
Middlebrook, R.D.
|
|
1963
|
6 |
5 |
p. 542-544
3 p.
|
artikel
|
| 20 |
Lithium content of GaAs single crystals
|
Wolfstirn, K.B.
|
|
1963
|
6 |
5 |
p. 453-458
6 p.
|
artikel
|
| 21 |
Mesoplasmas and “second breakdown” in silicon junctions
|
English, A.C.
|
|
1963
|
6 |
5 |
p. 511-521
11 p.
|
artikel
|
| 22 |
Metal-semiconductor rectifiers and transistors
|
Gossick, B.R.
|
|
1963
|
6 |
5 |
p. 445-452
8 p.
|
artikel
|
| 23 |
Miniature and microminiature electronics
|
Strull, G.
|
|
1963
|
6 |
5 |
p. 549-550
2 p.
|
artikel
|
| 24 |
Modulation von kleinen Gleichspannungen und -strömen mit hilfe eines magnetisch gesteuerten Widerstandes aus InSb
|
Hieronymus, H.
|
|
1963
|
6 |
5 |
p. 463-476
14 p.
|
artikel
|
| 25 |
Recombination radiation and stimulated emission in GaAs
|
Nathan, Marshall I.
|
|
1963
|
6 |
5 |
p. 425-430
6 p.
|
artikel
|
| 26 |
Single-crystal germanium films by micro-zone melting
|
Maserjian, J.
|
|
1963
|
6 |
5 |
p. 477-480
4 p.
|
artikel
|
| 27 |
Square-loop ferrite circuitry. Storage and logic techniques
|
Katz, H.W.
|
|
1963
|
6 |
5 |
p. 550-551
2 p.
|
artikel
|
| 28 |
The geometric factor in semiconductor four-probe resistivity measurements
|
Mircea, A.
|
|
1963
|
6 |
5 |
p. 459-462
4 p.
|
artikel
|
| 29 |
Two-carrier space-charge-limited current in solids and the dielectric capacitor
|
Lindmayer, J.
|
|
1963
|
6 |
5 |
p. 495-503
9 p.
|
artikel
|
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