| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances in electronic circuits packaging
|
Keonjian, E.
|
|
1963
|
6 |
3 |
p. 322-
1 p.
|
artikel
|
| 2 |
A new approach to the design of switching circuits
|
Hartman, Frank B.
|
|
1963
|
6 |
3 |
p. 317-318
2 p.
|
artikel
|
| 3 |
Application of the p-n-p variable-capacitance diode to microwave switching
|
Vasileff, H.D.
|
|
1963
|
6 |
3 |
p. 313-316
4 p.
|
artikel
|
| 4 |
CdTe solar cells and photovoltaic heterojunctions in II–VI compounds
|
Cusano, D.A.
|
|
1963
|
6 |
3 |
p. 217-232
16 p.
|
artikel
|
| 5 |
Comparison of resistivity measurement techniques on epitaxial silicon
|
Gardner, E.E.
|
|
1963
|
6 |
3 |
p. 311-313
3 p.
|
artikel
|
| 6 |
Conduction properties of the Au-n-type—Si Schottky barrier
|
Kahng, D.
|
|
1963
|
6 |
3 |
p. 281-295
15 p.
|
artikel
|
| 7 |
Design theory and experiment for silicon computer diodes
|
Chung, T.I.
|
|
1963
|
6 |
3 |
p. 271-279
9 p.
|
artikel
|
| 8 |
Determination of epitaxial-layer impurity profiles by means of microwave-diode measurements
|
Kressel, H.
|
|
1963
|
6 |
3 |
p. 309-311
3 p.
|
artikel
|
| 9 |
Electroluminescence
|
Drabble, J.R.
|
|
1963
|
6 |
3 |
p. 317-
1 p.
|
artikel
|
| 10 |
Evaporation-condensation method for making germanium layers for transistor purposes
|
Courvoisier, J.C.
|
|
1963
|
6 |
3 |
p. 265-270
6 p.
|
artikel
|
| 11 |
Hot-carrier triodes with thin-film metal base
|
Atalla, M.M.
|
|
1963
|
6 |
3 |
p. 245-250
6 p.
|
artikel
|
| 12 |
Impurity diffusion and drift in germanium tunnel-diode junctions
|
Buckingham, J.H.
|
|
1963
|
6 |
3 |
p. 233-244
12 p.
|
artikel
|
| 13 |
Progress in semiconductors
|
Dunlap, W.C.
|
|
1963
|
6 |
3 |
p. 319-321
3 p.
|
artikel
|
| 14 |
Simple evaluation of the maximum thermoelectric figure of merit, with application to mixed crystals SnS1-x Se x
|
Wasscher, J.D.
|
|
1963
|
6 |
3 |
p. 261-264
4 p.
|
artikel
|
| 15 |
Switching properties of biased ferroelectric colemanite
|
Wieder, H.H.
|
|
1963
|
6 |
3 |
p. 255-260
6 p.
|
artikel
|
| 16 |
The effect of vacuum-evaporation parameters on the structural, electrical and optical properties of thin germanium films
|
Davey, J.E.
|
|
1963
|
6 |
3 |
p. 205-216
12 p.
|
artikel
|
| 17 |
The electrochemistry of semiconductors
|
Gatos, Harry C.
|
|
1963
|
6 |
3 |
p. 321-322
2 p.
|
artikel
|
| 18 |
Ultra-violet and infra-red engineering
|
Koller, Lewis R.
|
|
1963
|
6 |
3 |
p. 318-319
2 p.
|
artikel
|
| 19 |
Variable-characteristic p—n-junction devices based on reversible ion drift
|
Kessler, J.O.
|
|
1963
|
6 |
3 |
p. 297-307
11 p.
|
artikel
|
| 20 |
Vitreous carbon as a crucible material for semiconductors
|
Lewis, J.C.
|
|
1963
|
6 |
3 |
p. 251-254
4 p.
|
artikel
|
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