| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Beweglichkeit von heissen ladungsträgern in Germanium bei einer Gittertemperatur von 300°K
|
Sánchez, M.
|
|
1963
|
6 |
2 |
p. 183-191
9 p.
|
artikel
|
| 2 |
British miniature electronic components and assemblies data annual
|
Billig, E.
|
|
1963
|
6 |
2 |
p. 196-
1 p.
|
artikel
|
| 3 |
CdS thin-film electron devices
|
Zuleeg, R.
|
|
1963
|
6 |
2 |
p. 193-194
2 p.
|
artikel
|
| 4 |
Charge multiplication in silicon p-n junctions
|
Moll, J.L.
|
|
1963
|
6 |
2 |
p. 147-157
11 p.
|
artikel
|
| 5 |
Electroluminescent devices using carrier injection in gallium phosphide
|
Allen, J.W.
|
|
1963
|
6 |
2 |
p. 95-96
2 p.
|
artikel
|
| 6 |
Elementary solid state physics
|
Milnes, A.G.
|
|
1963
|
6 |
2 |
p. 201-
1 p.
|
artikel
|
| 7 |
Ferrites: An introduction for microwave engineers
|
Bickford Jr., L.R.
|
|
1963
|
6 |
2 |
p. 202-204
3 p.
|
artikel
|
| 8 |
General considerations concerning the double-crucible method to grow uniformly doped germanium crystals of high perfection
|
Mataré, H.F.
|
|
1963
|
6 |
2 |
p. 163-167
5 p.
|
artikel
|
| 9 |
Mechanical stress considerations in thin-film devices
|
Budo, Y.
|
|
1963
|
6 |
2 |
p. 159-160
2 p.
|
artikel
|
| 10 |
Modern dictionary of electronics
|
Dunlap, W.C.
|
|
1963
|
6 |
2 |
p. 198-
1 p.
|
artikel
|
| 11 |
n-n Semiconductor heterojunctions
|
Oldham, W.G.
|
|
1963
|
6 |
2 |
p. 121-132
12 p.
|
artikel
|
| 12 |
Noise in electrical circuits
|
Ziel, A.van der
|
|
1963
|
6 |
2 |
p. 198-199
2 p.
|
artikel
|
| 13 |
Positive temperature coefficient of electrical resistivity in some ZnOTiO2NiO ceramics
|
Pry, R.H.
|
|
1963
|
6 |
2 |
p. 111-120
10 p.
|
artikel
|
| 14 |
Recombination statistics for auger effects with applications to p-n junctions
|
Evans, D.A.
|
|
1963
|
6 |
2 |
p. 169-181
13 p.
|
artikel
|
| 15 |
Superconducting devices
|
Ittner III, W.B.
|
|
1963
|
6 |
2 |
p. 201-202
2 p.
|
artikel
|
| 16 |
Surface charge and surface potential in arbitrarily doped crystals
|
Lindmayer, Joseph
|
|
1963
|
6 |
2 |
p. 137-140
4 p.
|
artikel
|
| 17 |
Surface dependence of Ge high-frequency high-gain transistors
|
Kuper, A.B.
|
|
1963
|
6 |
2 |
p. 71-72
2 p.
|
artikel
|
| 18 |
The junction transistor as a switching device
|
Ashar, Kanu G.
|
|
1963
|
6 |
2 |
p. 199-201
3 p.
|
artikel
|
| 19 |
Theory of noise of transistor-like devices
|
Polder, D.
|
|
1963
|
6 |
2 |
p. 103-110
8 p.
|
artikel
|
| 20 |
Thermoelectric properties of non-stoichiometric bismuth-antimony-telluride alloys
|
Bergvall, P.
|
|
1963
|
6 |
2 |
p. 133-136
4 p.
|
artikel
|
| 21 |
Transistor engineering and introduction to integrated semiconductor circuits
|
Mataré, H.F.
|
|
1963
|
6 |
2 |
p. 196-197
2 p.
|
artikel
|
| 22 |
Van der Pauw's method of measuring resistivities on lamellae of non-uniform resistivity
|
Amer, S.
|
|
1963
|
6 |
2 |
p. 141-145
5 p.
|
artikel
|
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