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                             37 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A novel self-refreshable capacitorless DRAM cell and its extended applications Wang, Peng-Fei
 2010
 54 9 p. 985-990
6 p.
 artikel
2 A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section De Michielis, L.
 2010
 54 9 p. 929-934
6 p.
 artikel
3 Asymmetrically strained all-silicon multi-gate n-Tunnel FETs Najmzadeh, M.
 2010
 54 9 p. 935-941
7 p.
 artikel
4 Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Chiarella, T.
 2010
 54 9 p. 855-860
6 p.
 artikel
5 C–V profiling of ultra-shallow junctions using step-like background profiles Popadić, Miloš
 2010
 54 9 p. 890-896
7 p.
 artikel
6 Double-gate pentacene thin-film transistor with improved control in sub-threshold region Tsamados, Dimitrios
 2010
 54 9 p. 1003-1009
7 p.
 artikel
7 Editorial Board 2010
 54 9 p. IFC-
1 p.
 artikel
8 Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers Chu, L.K.
 2010
 54 9 p. 965-971
7 p.
 artikel
9 Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI) Baudot, S.
 2010
 54 9 p. 861-869
9 p.
 artikel
10 Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration Sato, Soshi
 2010
 54 9 p. 925-928
4 p.
 artikel
11 Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin’s technique Antoszewski, J.
 2010
 54 9 p. 1047-1050
4 p.
 artikel
12 Epitaxial graphene field-effect transistors on silicon substrates Kang, Hyun-Chul
 2010
 54 9 p. 1010-1014
5 p.
 artikel
13 Estimation of amorphous fraction in multilevel phase-change memory cells Papandreou, N.
 2010
 54 9 p. 991-996
6 p.
 artikel
14 Foreward Dimoulas, A.
 2010
 54 9 p. 809-
1 p.
 artikel
15 Formation of silicon ultra shallow junction by non-melt excimer laser treatment Florakis, A.
 2010
 54 9 p. 903-908
6 p.
 artikel
16 Function by defects at the atomic scale – New concepts for non-volatile memories Waser, Rainer
 2010
 54 9 p. 830-840
11 p.
 artikel
17 Gate-all-around technology: Taking advantage of ballistic transport? Huguenin, J.L.
 2010
 54 9 p. 883-889
7 p.
 artikel
18 HfO2-based gate stacks transport mechanisms and parameter extraction Coignus, J.
 2010
 54 9 p. 972-978
7 p.
 artikel
19 Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below Fenouillet-Beranger, C.
 2010
 54 9 p. 849-854
6 p.
 artikel
20 Investigation of the performance of strained-SiGe vertical IMOS-transistors Dinh, Thanh Viet
 2010
 54 9 p. 942-949
8 p.
 artikel
21 Magneto-modulation of gate leakage current in 65nm nMOS transistors: Experimental, modeling, and simulation results Gutierrez-D, E.A.
 2010
 54 9 p. 1022-1026
5 p.
 artikel
22 Managing annealing pattern effects in 45nm low power CMOS technology Morin, P.
 2010
 54 9 p. 897-902
6 p.
 artikel
23 Modeling of gate-all-around charge trapping SONOS memory cells Gnani, E.
 2010
 54 9 p. 997-1002
6 p.
 artikel
24 On-chip Extraordinary Hall-effect sensors for characterization of nanomagnetic logic devices Becherer, M.
 2010
 54 9 p. 1027-1032
6 p.
 artikel
25 Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling Pantelides, Sokrates T.
 2010
 54 9 p. 841-848
8 p.
 artikel
26 Scaling beyond CMOS: Turing-Heisenberg Rapprochement Zhirnov, Victor V.
 2010
 54 9 p. 810-817
8 p.
 artikel
27 Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics Lin, T.D.
 2010
 54 9 p. 919-924
6 p.
 artikel
28 SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress Rahman, M.S.
 2010
 54 9 p. 979-984
6 p.
 artikel
29 Simple and efficient modeling of the E–k relationship and low-field mobility in Graphene Nano-Ribbons Bresciani, Marco
 2010
 54 9 p. 1015-1021
7 p.
 artikel
30 Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors Carrara, F.
 2010
 54 9 p. 957-964
8 p.
 artikel
31 Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation Urban, C.
 2010
 54 9 p. 877-882
6 p.
 artikel
32 Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces Abd Allah, Mohamed
 2010
 54 9 p. 1041-1046
6 p.
 artikel
33 Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement Reggiani, S.
 2010
 54 9 p. 950-956
7 p.
 artikel
34 Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance Fernández-Bolaños, Montserrat
 2010
 54 9 p. 1033-1040
8 p.
 artikel
35 Ultra-high aspect-ratio FinFET technology Jovanović, Vladimir
 2010
 54 9 p. 870-876
7 p.
 artikel
36 Ultra-thin chip technology and applications, a new paradigm in silicon technology Burghartz, Joachim N.
 2010
 54 9 p. 818-829
12 p.
 artikel
37 V DD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations Baravelli, Emanuele
 2010
 54 9 p. 909-918
10 p.
 artikel
                             37 gevonden resultaten
 
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