| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350°C
|
Adedeji, Adetayo V.
|
|
2010
|
54 |
7 |
p. 736-740
5 p.
|
article
|
| 2 |
Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric
|
Kakushima, K.
|
|
2010
|
54 |
7 |
p. 720-723
4 p.
|
article
|
| 3 |
Editorial Board
|
|
|
2010
|
54 |
7 |
p. IFC-
1 p.
|
article
|
| 4 |
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
|
Li, C.X.
|
|
2010
|
54 |
7 |
p. 675-679
5 p.
|
article
|
| 5 |
Effects of thermal annealing on structure, morphology and electrical properties of F16CuPc/α6T heterojunction thin films
|
Ye, Rongbin
|
|
2010
|
54 |
7 |
p. 710-714
5 p.
|
article
|
| 6 |
Extracting the Schottky barrier height from axial contacts to semiconductor nanowires
|
Sarpatwari, K.
|
|
2010
|
54 |
7 |
p. 689-695
7 p.
|
article
|
| 7 |
Formation of 30-V power DMOSFET’s by implementing p-counter-doped region within n-type drift layer
|
Juang, Miin-Horng
|
|
2010
|
54 |
7 |
p. 724-727
4 p.
|
article
|
| 8 |
High voltage REBULF LDMOS with N+ buried layer
|
Duan, Baoxing
|
|
2010
|
54 |
7 |
p. 685-688
4 p.
|
article
|
| 9 |
Interface and electrical properties of La-silicate for direct contact of high-k with silicon
|
Kakushima, K.
|
|
2010
|
54 |
7 |
p. 715-719
5 p.
|
article
|
| 10 |
Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
|
Jarndal, Anwar
|
|
2010
|
54 |
7 |
p. 696-700
5 p.
|
article
|
| 11 |
Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO
|
Lu, Y.F.
|
|
2010
|
54 |
7 |
p. 732-735
4 p.
|
article
|
| 12 |
Ni–Au contacts to p-type GaN – Structure and properties
|
Smalc-Koziorowska, Julita
|
|
2010
|
54 |
7 |
p. 701-709
9 p.
|
article
|
| 13 |
On the piezoelectric coupling constant of epitaxial Mg-doped GaN
|
Xu, X.
|
|
2010
|
54 |
7 |
p. 680-684
5 p.
|
article
|
| 14 |
The direct evidence of substrate potential propagation in a gate-grounded NMOS
|
Yang, Dao-Hong
|
|
2010
|
54 |
7 |
p. 728-731
4 p.
|
article
|
Journal description