| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An alternative passivation approach for AlGaN/GaN HEMTs
|
Lin, Heng-Kuang
|
|
2010
|
54 |
5 |
p. 552-556
5 p.
|
artikel
|
| 2 |
Analysis of subthreshold conduction in short-channel recessed source/drain UTB SOI MOSFETs
|
Sviličić, B.
|
|
2010
|
54 |
5 |
p. 545-551
7 p.
|
artikel
|
| 3 |
Compact capacitance modeling of a 3-terminal FET at zero drain–source voltage
|
Iñiguez, Benjamin
|
|
2010
|
54 |
5 |
p. 520-523
4 p.
|
artikel
|
| 4 |
Contact resistance between Au and solution-processed CNT
|
Han, Seung Hoon
|
|
2010
|
54 |
5 |
p. 586-589
4 p.
|
artikel
|
| 5 |
DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths
|
Lin, Heng-Kuang
|
|
2010
|
54 |
5 |
p. 582-585
4 p.
|
artikel
|
| 6 |
E-beam-evaporated Al2O3 for InAs/AlSb metal–oxide–semiconductor HEMT development
|
Lin, H.-K.
|
|
2010
|
54 |
5 |
p. 505-508
4 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2010
|
54 |
5 |
p. IFC-
1 p.
|
artikel
|
| 8 |
Enhanced light output power of GaN-based light emitting diodes with overcut sideholes formed by wet etching
|
Kim, Hyun Kyu
|
|
2010
|
54 |
5 |
p. 575-578
4 p.
|
artikel
|
| 9 |
Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0001)
|
Kissinger, Suthan
|
|
2010
|
54 |
5 |
p. 509-515
7 p.
|
artikel
|
| 10 |
Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness
|
Dong, Yaoqi
|
|
2010
|
54 |
5 |
p. 579-581
3 p.
|
artikel
|
| 11 |
Explicit quantum potential and charge model for double-gate MOSFETs
|
Chaves, Ferney
|
|
2010
|
54 |
5 |
p. 530-535
6 p.
|
artikel
|
| 12 |
Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation
|
Juang, Miin-Horng
|
|
2010
|
54 |
5 |
p. 516-519
4 p.
|
artikel
|
| 13 |
Formation of ohmic contact by pre-annealing of shallow nanopores in macroporous silicon and its characterization
|
Maji, S.
|
|
2010
|
54 |
5 |
p. 568-574
7 p.
|
artikel
|
| 14 |
High efficient organic ultraviolet photovoltaic devices based on gallium complex
|
Su, Zisheng
|
|
2010
|
54 |
5 |
p. 605-608
4 p.
|
artikel
|
| 15 |
Highly efficient undoped deep-blue electroluminescent device based on a novel pyrene derivative
|
Wang, Zhiqiang
|
|
2010
|
54 |
5 |
p. 524-526
3 p.
|
artikel
|
| 16 |
Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes
|
Alvi, N.H.
|
|
2010
|
54 |
5 |
p. 536-540
5 p.
|
artikel
|
| 17 |
Nitride-based blue light-emitting diodes with multiple Mg x N y /GaN buffer layers
|
Fu, Y.K.
|
|
2010
|
54 |
5 |
p. 590-594
5 p.
|
artikel
|
| 18 |
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40nm PD SOI NMOS device
|
Hung, H.J.
|
|
2010
|
54 |
5 |
p. 609-611
3 p.
|
artikel
|
| 19 |
Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories
|
Jeon, Kichan
|
|
2010
|
54 |
5 |
p. 557-563
7 p.
|
artikel
|
| 20 |
Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs
|
Huang, Heng-Sheng
|
|
2010
|
54 |
5 |
p. 527-529
3 p.
|
artikel
|
| 21 |
Substrate-free large gap InGaN solar cells with bottom reflector
|
Tsai, Chia-Lung
|
|
2010
|
54 |
5 |
p. 541-544
4 p.
|
artikel
|
| 22 |
Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs
|
Wu, Weimin
|
|
2010
|
54 |
5 |
p. 595-604
10 p.
|
artikel
|
| 23 |
Ultrathin DPN STI SiON liner for 40nm low-power CMOS technology
|
Hu, Chan-Yuan
|
|
2010
|
54 |
5 |
p. 564-567
4 p.
|
artikel
|
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