| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A C-band GaN based linear power amplifier with 55.7% PAE
|
Luo, Weijun
|
|
2010
|
54 |
4 |
p. 457-460
4 p.
|
artikel
|
| 2 |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology
|
Weng, Wu-Te
|
|
2010
|
54 |
4 |
p. 368-377
10 p.
|
artikel
|
| 3 |
A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells
|
Datta, A.
|
|
2010
|
54 |
4 |
p. 397-404
8 p.
|
artikel
|
| 4 |
A concisely asymmetric modeling of double-π equivalent circuit for on-chip spiral inductors
|
Yu, Li
|
|
2010
|
54 |
4 |
p. 343-348
6 p.
|
artikel
|
| 5 |
A flash analog to digital converter on stainless steel foil substrate
|
Jamshidi-Roudbari, Abbas
|
|
2010
|
54 |
4 |
p. 410-416
7 p.
|
artikel
|
| 6 |
AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact
|
Lee, Han Cheng
|
|
2010
|
54 |
4 |
p. 488-491
4 p.
|
artikel
|
| 7 |
A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements
|
Lee, Seungyeon
|
|
2010
|
54 |
4 |
p. 497-503
7 p.
|
artikel
|
| 8 |
Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement
|
Cho, Kyu-Heon
|
|
2010
|
54 |
4 |
p. 405-409
5 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2010
|
54 |
4 |
p. IFC-
1 p.
|
artikel
|
| 10 |
Effects of switching from ‹110› to ‹100› channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors
|
Yang, Peizhen
|
|
2010
|
54 |
4 |
p. 461-474
14 p.
|
artikel
|
| 11 |
Electroplex emission of the blend film of PVK and DPVBi
|
Li, Junming
|
|
2010
|
54 |
4 |
p. 349-352
4 p.
|
artikel
|
| 12 |
Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers
|
Zhang, Hai Zhong
|
|
2010
|
54 |
4 |
p. 479-483
5 p.
|
artikel
|
| 13 |
Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures
|
Yoon, Kyung-Min
|
|
2010
|
54 |
4 |
p. 484-487
4 p.
|
artikel
|
| 14 |
ESD performance of 65nm partially depleted n and p channel SOI MOSFETs
|
Mishra, R.
|
|
2010
|
54 |
4 |
p. 357-361
5 p.
|
artikel
|
| 15 |
Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)
|
Cho, Heung-Jae
|
|
2010
|
54 |
4 |
p. 362-367
6 p.
|
artikel
|
| 16 |
Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors
|
Lin, H.-K.
|
|
2010
|
54 |
4 |
p. 475-478
4 p.
|
artikel
|
| 17 |
Highly durable and flexible memory based on resistance switching
|
Kim, Sungho
|
|
2010
|
54 |
4 |
p. 392-396
5 p.
|
artikel
|
| 18 |
1.3μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs
|
Montes, M.
|
|
2010
|
54 |
4 |
p. 492-496
5 p.
|
artikel
|
| 19 |
Microwave power and simulation of S-band SiC MESFETs
|
Gang, Chen
|
|
2010
|
54 |
4 |
p. 353-356
4 p.
|
artikel
|
| 20 |
Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers
|
Gaubert, Philippe
|
|
2010
|
54 |
4 |
p. 420-426
7 p.
|
artikel
|
| 21 |
Nanostructured morphology of P3HT:PCBM bulk heterojunction solar cells
|
Kalita, Golap
|
|
2010
|
54 |
4 |
p. 447-451
5 p.
|
artikel
|
| 22 |
Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes
|
Plessis, Monuko du
|
|
2010
|
54 |
4 |
p. 433-438
6 p.
|
artikel
|
| 23 |
Novel phase-change material GeSbSe for application of three-level phase-change random access memory
|
Gu, Yifeng
|
|
2010
|
54 |
4 |
p. 443-446
4 p.
|
artikel
|
| 24 |
Robustness of SuperJunction structures against cosmic ray induced breakdown
|
Antoniou, Marina
|
|
2010
|
54 |
4 |
p. 385-391
7 p.
|
artikel
|
| 25 |
Si x Ge y :H-based micro-bolometers studied in the terahertz frequency range
|
Kosarev, A.
|
|
2010
|
54 |
4 |
p. 417-419
3 p.
|
artikel
|
| 26 |
Solution space for the independent-gate asymmetric DGFET
|
Dessai, Gajanan
|
|
2010
|
54 |
4 |
p. 382-384
3 p.
|
artikel
|
| 27 |
Storage stability improvement of pentacene thin-film transistors using polyimide passivation layer fabricated by vapor deposition polymerization
|
Hyung, Gun Woo
|
|
2010
|
54 |
4 |
p. 439-442
4 p.
|
artikel
|
| 28 |
The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time
|
Zhao, Yue
|
|
2010
|
54 |
4 |
p. 452-456
5 p.
|
artikel
|
| 29 |
Thermal and spectral analysis of self-heating effects in high-power LEDs
|
Rada, Nicholas M.
|
|
2010
|
54 |
4 |
p. 378-381
4 p.
|
artikel
|
| 30 |
Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors
|
Oxland, Richard K.
|
|
2010
|
54 |
4 |
p. 427-432
6 p.
|
artikel
|
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