| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A low insertion loss GaAs pHEMT switch utilizing dual n+-doping AlAs etching stop layers design
|
Chien, Feng-Tso
|
|
2010
|
54 |
3 |
p. 231-234
4 p.
|
artikel
|
| 2 |
Capacitances in micro-strip detectors: A conformal mapping approach
|
Cattaneo, Paolo Walter
|
|
2010
|
54 |
3 |
p. 252-258
7 p.
|
artikel
|
| 3 |
Capacitance–voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs
|
Tang, Z.
|
|
2010
|
54 |
3 |
p. 259-267
9 p.
|
artikel
|
| 4 |
Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations
|
Jankovic, Nebojsa
|
|
2010
|
54 |
3 |
p. 268-274
7 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2010
|
54 |
3 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer
|
Juang, Miin-Horng
|
|
2010
|
54 |
3 |
p. 303-306
4 p.
|
artikel
|
| 7 |
High performance pMOS circuits with silicon-on-glass TFTs
|
Kim, Jae Ik
|
|
2010
|
54 |
3 |
p. 299-302
4 p.
|
artikel
|
| 8 |
Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design
|
Wang, Pei
|
|
2010
|
54 |
3 |
p. 283-287
5 p.
|
artikel
|
| 9 |
Influence of gate misalignment on the electrical characteristics of MuGFETS
|
Lee, Chi-Woo
|
|
2010
|
54 |
3 |
p. 226-230
5 p.
|
artikel
|
| 10 |
Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor
|
Tsai, Jung-Hui
|
|
2010
|
54 |
3 |
p. 275-278
4 p.
|
artikel
|
| 11 |
J–V characteristics of GaN containing traps at several discrete energy levels
|
Jain, Anubha
|
|
2010
|
54 |
3 |
p. 288-293
6 p.
|
artikel
|
| 12 |
Open-circuit voltages: Theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers
|
Stem, N.
|
|
2010
|
54 |
3 |
p. 221-225
5 p.
|
artikel
|
| 13 |
Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction
|
Bindu, B.
|
|
2010
|
54 |
3 |
p. 307-315
9 p.
|
artikel
|
| 14 |
Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs
|
Okayama, T.
|
|
2010
|
54 |
3 |
p. 294-298
5 p.
|
artikel
|
| 15 |
Quantitative prediction of junction leakage in bulk-technology CMOS devices
|
Duffy, R.
|
|
2010
|
54 |
3 |
p. 243-251
9 p.
|
artikel
|
| 16 |
Role of the substrate during pseudo-MOSFET drain current transients
|
Park, K.
|
|
2010
|
54 |
3 |
p. 316-322
7 p.
|
artikel
|
| 17 |
Silicon on insulator MESFETs for RF amplifiers
|
Wilk, Seth J.
|
|
2010
|
54 |
3 |
p. 336-342
7 p.
|
artikel
|
| 18 |
Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
|
Park, Dong Jin
|
|
2010
|
54 |
3 |
p. 323-326
4 p.
|
artikel
|
| 19 |
The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs
|
Alatise, O.M.
|
|
2010
|
54 |
3 |
p. 327-335
9 p.
|
artikel
|
| 20 |
Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts
|
Chen, Li-Yang
|
|
2010
|
54 |
3 |
p. 279-282
4 p.
|
artikel
|
| 21 |
Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
|
Torres-Torres, Reydezel
|
|
2010
|
54 |
3 |
p. 235-242
8 p.
|
artikel
|
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