| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC conductivity and dielectric properties of thermally evaporated PbTe thin films
|
Kungumadevi, L.
|
|
2010
|
54 |
1 |
p. 58-62
5 p.
|
artikel
|
| 2 |
A comparative study of photoconductivity and carrier transport in a-Si:H p–i–n solar cells with different back contacts
|
Kaplan, R.
|
|
2010
|
54 |
1 |
p. 22-27
6 p.
|
artikel
|
| 3 |
Analysis of noise in CMOS image sensor based on a unified time-dependent approach
|
Brouk, Igor
|
|
2010
|
54 |
1 |
p. 28-36
9 p.
|
artikel
|
| 4 |
An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect
|
Cheng, Xiaoxu
|
|
2010
|
54 |
1 |
p. 42-47
6 p.
|
artikel
|
| 5 |
CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits
|
Hayati, Mohsen
|
|
2010
|
54 |
1 |
p. 52-57
6 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2010
|
54 |
1 |
p. IFC-
1 p.
|
artikel
|
| 7 |
Experimental measurement of work function in doped silicon surfaces
|
Novikov, Alexander
|
|
2010
|
54 |
1 |
p. 8-13
6 p.
|
artikel
|
| 8 |
Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator
|
Sugiura, S.
|
|
2010
|
54 |
1 |
p. 79-83
5 p.
|
artikel
|
| 9 |
Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection
|
Semendy, F.
|
|
2010
|
54 |
1 |
p. 1-3
3 p.
|
artikel
|
| 10 |
Improved infrared (IR) microscope measurements and theory for the micro-electronics industry
|
Oxley, C.H.
|
|
2010
|
54 |
1 |
p. 63-66
4 p.
|
artikel
|
| 11 |
Operational upsets and critical new bit errors in CMOS digital inverters due to high power pulsed electromagnetic interference
|
Kim, Kyechong
|
|
2010
|
54 |
1 |
p. 18-21
4 p.
|
artikel
|
| 12 |
Pulse-agitated self-convergent programming for 4-bit per cell dual charge storage layer flash memory
|
Zhang, Gang
|
|
2010
|
54 |
1 |
p. 14-17
4 p.
|
artikel
|
| 13 |
Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure
|
Baghbani Parizi, K.
|
|
2010
|
54 |
1 |
p. 48-51
4 p.
|
artikel
|
| 14 |
Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base
|
Oudir, A.
|
|
2010
|
54 |
1 |
p. 67-78
12 p.
|
artikel
|
| 15 |
Study of GaN epilayers growth on freestanding Si cantilevers
|
Chen, Jing
|
|
2010
|
54 |
1 |
p. 4-7
4 p.
|
artikel
|
| 16 |
Study of the inversion behaviors of Al2O3/In x Ga1− x As metal–oxide–semiconductor capacitors with different In contents
|
Wu, Yun-Chi
|
|
2010
|
54 |
1 |
p. 37-41
5 p.
|
artikel
|
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