| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive model of frequency dispersion in 4H–SiC MESFET
|
Lu, Hongliang
|
|
2009
|
53 |
3 |
p. 285-291
7 p.
|
artikel
|
| 2 |
A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric
|
Kwon, Jae-Hong
|
|
2009
|
53 |
3 |
p. 266-270
5 p.
|
artikel
|
| 3 |
Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors
|
Marano, I.
|
|
2009
|
53 |
3 |
p. 297-307
11 p.
|
artikel
|
| 4 |
An internally-matched GaN HEMTs device with 45.2W at 8GHz for X-band application
|
Wang, X.L.
|
|
2009
|
53 |
3 |
p. 332-335
4 p.
|
artikel
|
| 5 |
A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires
|
Esposito, A.
|
|
2009
|
53 |
3 |
p. 376-382
7 p.
|
artikel
|
| 6 |
Charge trapping behavior of SiO2-Anodic Al2O3–SiO2 gate dielectrics for nonvolatile memory applications
|
Huang, Chun-Hsien
|
|
2009
|
53 |
3 |
p. 279-284
6 p.
|
artikel
|
| 7 |
Design and numerical analysis of a polarization-insensitive quantum well optoelectronic integrated amplifier-switch
|
Darabi, E.
|
|
2009
|
53 |
3 |
p. 383-388
6 p.
|
artikel
|
| 8 |
Discussions and extension of van Vliet’s noise model for high speed bipolar transistors
|
Xia, Kejun
|
|
2009
|
53 |
3 |
p. 349-354
6 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2009
|
53 |
3 |
p. IFC-
1 p.
|
artikel
|
| 10 |
Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation
|
Sen, Banani
|
|
2009
|
53 |
3 |
p. 355-358
4 p.
|
artikel
|
| 11 |
Experimental characterization of the subthreshold leakage current in triple-gate FinFETs
|
Tsormpatzoglou, A.
|
|
2009
|
53 |
3 |
p. 359-363
5 p.
|
artikel
|
| 12 |
Formation of polycrystalline-Si thin-film-transistors with a retrograde channel doping profile
|
Juang, Miin-Horng
|
|
2009
|
53 |
3 |
p. 371-375
5 p.
|
artikel
|
| 13 |
Gated tunnel diode in oscillator applications with high frequency tuning
|
Wernersson, L.-E.
|
|
2009
|
53 |
3 |
p. 292-296
5 p.
|
artikel
|
| 14 |
Measurement of the MOSFET drain current variation under high gate voltage
|
Terada, Kazuo
|
|
2009
|
53 |
3 |
p. 314-319
6 p.
|
artikel
|
| 15 |
Negative capacitance in light-emitting devices
|
Zhu, C.Y.
|
|
2009
|
53 |
3 |
p. 324-328
5 p.
|
artikel
|
| 16 |
Optical properties studies in InGaN/GaN multiple-quantum well
|
Zhu, Lihong
|
|
2009
|
53 |
3 |
p. 336-340
5 p.
|
artikel
|
| 17 |
Performance evaluation of sphere-form cathodes in the fabrication of optoelectronic In2O3SnO2 PET
|
Pa, P.S.
|
|
2009
|
53 |
3 |
p. 308-313
6 p.
|
artikel
|
| 18 |
Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure
|
Rao, Feng
|
|
2009
|
53 |
3 |
p. 276-278
3 p.
|
artikel
|
| 19 |
Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack
|
Rochette, F.
|
|
2009
|
53 |
3 |
p. 392-396
5 p.
|
artikel
|
| 20 |
Pure red organic light-emitting diode based on a europium complex
|
Xue, Qin
|
|
2009
|
53 |
3 |
p. 397-399
3 p.
|
artikel
|
| 21 |
Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators
|
Vexler, M.I.
|
|
2009
|
53 |
3 |
p. 364-370
7 p.
|
artikel
|
| 22 |
Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT
|
Huque, M.A.
|
|
2009
|
53 |
3 |
p. 341-348
8 p.
|
artikel
|
| 23 |
The charge transport mechanism in silicon nitride: Multi-phonon trap ionization
|
Vishnyakov, A.V.
|
|
2009
|
53 |
3 |
p. 251-255
5 p.
|
artikel
|
| 24 |
Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs
|
Rao, Rathnamala
|
|
2009
|
53 |
3 |
p. 256-265
10 p.
|
artikel
|
| 25 |
Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM
|
Ryu, Seong-Wan
|
|
2009
|
53 |
3 |
p. 389-391
3 p.
|
artikel
|
| 26 |
Visualization of local gate control in a ZnO inter-nanowire junction device
|
Lim, Jin-Hyung
|
|
2009
|
53 |
3 |
p. 320-323
4 p.
|
artikel
|
| 27 |
Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces
|
Khalid Ashraf, Md.
|
|
2009
|
53 |
3 |
p. 271-275
5 p.
|
artikel
|
| 28 |
Zinc tin oxide based driver for highly transparent active matrix OLED displays
|
Görrn, Patrick
|
|
2009
|
53 |
3 |
p. 329-331
3 p.
|
artikel
|
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