| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET
|
Cathignol, Augustin
|
|
2009
|
53 |
2 |
p. 127-133
7 p.
|
artikel
|
| 2 |
A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs
|
Hariharan, Venkatnarayan
|
|
2009
|
53 |
2 |
p. 218-224
7 p.
|
artikel
|
| 3 |
A model for the C–V characteristics of the metal–ferroelectric–insulator–semiconductor structure
|
Zhang, Jun Jie
|
|
2009
|
53 |
2 |
p. 170-175
6 p.
|
artikel
|
| 4 |
Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements
|
Torres-Rios, Emmanuel
|
|
2009
|
53 |
2 |
p. 145-149
5 p.
|
artikel
|
| 5 |
An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass
|
Yuan, Yu
|
|
2009
|
53 |
2 |
p. 140-144
5 p.
|
artikel
|
| 6 |
A novel vertical channel self-aligned split-gate flash memory
|
Wu, Dake
|
|
2009
|
53 |
2 |
p. 124-126
3 p.
|
artikel
|
| 7 |
Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTs
|
Chen, Ke-Shian
|
|
2009
|
53 |
2 |
p. 154-159
6 p.
|
artikel
|
| 8 |
Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs
|
Xiao, Dongping
|
|
2009
|
53 |
2 |
p. 185-189
5 p.
|
artikel
|
| 9 |
Drain bias dependent bias temperature stress instability in a-Si:H TFT
|
Tang, Z.
|
|
2009
|
53 |
2 |
p. 225-233
9 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2009
|
53 |
2 |
p. IFC-
1 p.
|
artikel
|
| 11 |
Efficient electron transfers in ZnO nanorod arrays with N719 dye for hybrid solar cells
|
Thitima, Rattanavoravipa
|
|
2009
|
53 |
2 |
p. 176-180
5 p.
|
artikel
|
| 12 |
Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs
|
Na, K.-I.
|
|
2009
|
53 |
2 |
p. 150-153
4 p.
|
artikel
|
| 13 |
Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene–phenylene based light emitting diodes
|
Romero, B.
|
|
2009
|
53 |
2 |
p. 211-217
7 p.
|
artikel
|
| 14 |
Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs
|
Törmä, P.T.
|
|
2009
|
53 |
2 |
p. 166-169
4 p.
|
artikel
|
| 15 |
Maximum powers of low-loss series–shunt FET RF switches
|
Yang, Z.
|
|
2009
|
53 |
2 |
p. 117-119
3 p.
|
artikel
|
| 16 |
New modes of THz generation by low-temperature-grown GaAsSb
|
Hargreaves, S.
|
|
2009
|
53 |
2 |
p. 160-165
6 p.
|
artikel
|
| 17 |
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
|
Chen, Tzu-Pin
|
|
2009
|
53 |
2 |
p. 190-194
5 p.
|
artikel
|
| 18 |
Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surface
|
Fan, Ching-Lin
|
|
2009
|
53 |
2 |
p. 246-250
5 p.
|
artikel
|
| 19 |
Parameter determination of Schottky-barrier diode model using differential evolution
|
Wang, Kaier
|
|
2009
|
53 |
2 |
p. 234-240
7 p.
|
artikel
|
| 20 |
Passivation of 4H–SiC Schottky barrier diodes using aluminum based dielectrics
|
Kumta, A.
|
|
2009
|
53 |
2 |
p. 204-210
7 p.
|
artikel
|
| 21 |
Photocapacitance study at p–i–n photodiode by numerical C–V integration
|
Kavasoglu, A. Sertap
|
|
2009
|
53 |
2 |
p. 241-245
5 p.
|
artikel
|
| 22 |
Raman study of GaAs / Ga 1 - x Al x As quantum dots: A dielectric continuum approach
|
Zhong, Qing-Hu
|
|
2009
|
53 |
2 |
p. 134-139
6 p.
|
artikel
|
| 23 |
Red electroluminescent devices based on rubrene derivative in 4,4′-N,N′-dicarubreneazole-biphenyl host and its application in white light emitting device for lighting purpose
|
Li, Tianle
|
|
2009
|
53 |
2 |
p. 120-123
4 p.
|
artikel
|
| 24 |
RF performance of GaAs pHEMT switches with various upper/lower δ-doped ratio designs
|
Chiu, Hsien-Chin
|
|
2009
|
53 |
2 |
p. 181-184
4 p.
|
artikel
|
| 25 |
Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models
|
Lou, Lifang
|
|
2009
|
53 |
2 |
p. 195-203
9 p.
|
artikel
|
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