| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
|
Palestri, P.
|
|
2009
|
53 |
12 |
p. 1293-1302
10 p.
|
article
|
| 2 |
Advanced SOI CMOS transistor technology for high performance microprocessors
|
Horstmann, M.
|
|
2009
|
53 |
12 |
p. 1212-1219
8 p.
|
article
|
| 3 |
A Haynes–Shockley experiment for spin-polarized electron transport in silicon
|
Appelbaum, Ian
|
|
2009
|
53 |
12 |
p. 1242-1245
4 p.
|
article
|
| 4 |
Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3
|
Lucovsky, Gerald
|
|
2009
|
53 |
12 |
p. 1273-1279
7 p.
|
article
|
| 5 |
Computing based on the physics of nano devices—A beyond-CMOS approach to human-like intelligent systems
|
Shibata, Tadashi
|
|
2009
|
53 |
12 |
p. 1227-1241
15 p.
|
article
|
| 6 |
DC and low frequency noise characterization of FinFET devices
|
Bennamane, K.
|
|
2009
|
53 |
12 |
p. 1263-1267
5 p.
|
article
|
| 7 |
Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs
|
Hubert, A.
|
|
2009
|
53 |
12 |
p. 1280-1286
7 p.
|
article
|
| 8 |
Editorial Board
|
|
|
2009
|
53 |
12 |
p. IFC-
1 p.
|
article
|
| 9 |
Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins
|
Baravelli, Emanuele
|
|
2009
|
53 |
12 |
p. 1303-1312
10 p.
|
article
|
| 10 |
Foreword
|
Lemme, Max C.
|
|
2009
|
53 |
12 |
p. 1211-
1 p.
|
article
|
| 11 |
High density 3D memory architecture based on the resistive switching effect
|
Kügeler, C.
|
|
2009
|
53 |
12 |
p. 1287-1292
6 p.
|
article
|
| 12 |
Impact ionization rates for strained Si and SiGe
|
Dinh, Thanh Viet
|
|
2009
|
53 |
12 |
p. 1318-1324
7 p.
|
article
|
| 13 |
Improved effective mobility extraction in MOSFETs
|
Thomas, S.M.
|
|
2009
|
53 |
12 |
p. 1252-1256
5 p.
|
article
|
| 14 |
Investigation of 1/f noise in germanium-on-insulator 0.12μm PMOS transistors from weak to strong inversion
|
Gyani, J.
|
|
2009
|
53 |
12 |
p. 1268-1272
5 p.
|
article
|
| 15 |
Mobility extraction in SOI MOSFETs with sub 1nm body thickness
|
Schmidt, M.
|
|
2009
|
53 |
12 |
p. 1246-1251
6 p.
|
article
|
| 16 |
Modeling and validation of piezoresistive coefficients in Si hole inversion layers
|
Pham, A.T.
|
|
2009
|
53 |
12 |
p. 1325-1333
9 p.
|
article
|
| 17 |
Non-metallic effects in silicided gate MOSFETs
|
Rodriguez, Noel
|
|
2009
|
53 |
12 |
p. 1313-1317
5 p.
|
article
|
| 18 |
Plastic circuits and tags for 13.56MHz radio-frequency communication
|
Myny, Kris
|
|
2009
|
53 |
12 |
p. 1220-1226
7 p.
|
article
|
| 19 |
Silicon nanowire FETs with uniaxial tensile strain
|
Feste, S.F.
|
|
2009
|
53 |
12 |
p. 1257-1262
6 p.
|
article
|
Journal description