| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Charge transfer and trapping properties in polymer gate dielectrics for non-volatile organic field-effect transistor memory applications
|
Baeg, Kang-Jun
|
|
2009
|
53 |
11 |
p. 1165-1168
4 p.
|
artikel
|
| 2 |
Closed-form partitioned gate tunneling current model for NMOS devices with an ultra-thin gate oxide
|
Lin, C.H.
|
|
2009
|
53 |
11 |
p. 1191-1197
7 p.
|
artikel
|
| 3 |
Corrigendum to “Symmetric linearization method for double-gate and surrounding-gate MOSFET models” [Solid State Electronics 53(5) (2009) 548–556]
|
Dessai, Gajanan
|
|
2009
|
53 |
11 |
p. 1209-
1 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
2009
|
53 |
11 |
p. IFC-
1 p.
|
artikel
|
| 5 |
Electrical characteristics of MIS capacitors with multi-stack thermal-agglomerating Ge nanocrystals in SiO2/SiN x dielectrics
|
Lo, Shih-Yung
|
|
2009
|
53 |
11 |
p. 1186-1190
5 p.
|
artikel
|
| 6 |
Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
|
Toko, Kaoru
|
|
2009
|
53 |
11 |
p. 1159-1164
6 p.
|
artikel
|
| 7 |
1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
|
Yan, L.
|
|
2009
|
53 |
11 |
p. 1177-1182
6 p.
|
artikel
|
| 8 |
Growth of ZnO:Al films by RF sputtering at room temperature for solar cell applications
|
Wang, Z.A.
|
|
2009
|
53 |
11 |
p. 1149-1153
5 p.
|
artikel
|
| 9 |
Multi-domain multi-level abstraction modelling of integrated power devices
|
Castellazzi, Alberto
|
|
2009
|
53 |
11 |
p. 1202-1208
7 p.
|
artikel
|
| 10 |
Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1− x Ge x structures on Si(001) substrates
|
Mizutani, Takuya
|
|
2009
|
53 |
11 |
p. 1198-1201
4 p.
|
artikel
|
| 11 |
The effect of rubidium chloride on properties of organic light-emitting diodes
|
Lü, Zhaoyue
|
|
2009
|
53 |
11 |
p. 1154-1158
5 p.
|
artikel
|
| 12 |
Transient activation model for antimony in relaxed and strained silicon
|
Lai, Y.
|
|
2009
|
53 |
11 |
p. 1173-1176
4 p.
|
artikel
|
| 13 |
Trap behaviors in AlGaN–GaN heterostructures by C–V characterization
|
Xie, Shengyin
|
|
2009
|
53 |
11 |
p. 1183-1185
3 p.
|
artikel
|
| 14 |
71W (19.7W/mm) SiC BJTs for long-pulse UHF radar applications
|
Zhao, Feng
|
|
2009
|
53 |
11 |
p. 1169-1172
4 p.
|
artikel
|
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