nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A study of gateless OTP cell using a 45nm CMOS compatible process
|
Tsai, Yi-Hung |
|
2009 |
53 |
10 |
p. 1092-1098 7 p. |
artikel |
2 |
Comparative analysis of unity gain frequency of top and bottom-contact organic thin film transistors
|
Nurul Islam, M. |
|
2009 |
53 |
10 |
p. 1067-1075 9 p. |
artikel |
3 |
Editorial Board
|
|
|
2009 |
53 |
10 |
p. IFC- 1 p. |
artikel |
4 |
Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency
|
Hong, Eun-Ju |
|
2009 |
53 |
10 |
p. 1099-1102 4 p. |
artikel |
5 |
Finite element simulation of metal–semiconductor–metal photodetector
|
Guarino, G. |
|
2009 |
53 |
10 |
p. 1144-1148 5 p. |
artikel |
6 |
Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
|
Sandow, C. |
|
2009 |
53 |
10 |
p. 1126-1129 4 p. |
artikel |
7 |
Method of extracting effective channel length for nano-scale n-MOSFETs
|
Choi, H.W. |
|
2009 |
53 |
10 |
p. 1076-1085 10 p. |
artikel |
8 |
Multiband simulation of quantum transport in nanoscale double-gate MOSFETs
|
Iwata, Hideyuki |
|
2009 |
53 |
10 |
p. 1130-1134 5 p. |
artikel |
9 |
Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure
|
Kim, Seong-Dong |
|
2009 |
53 |
10 |
p. 1112-1115 4 p. |
artikel |
10 |
Preparation and characterization of solid n-TiO2/p-NiO hetrojunction electrodes for all-solid-state dye-sensitized solar cells
|
Lee, Yi-Mu |
|
2009 |
53 |
10 |
p. 1116-1125 10 p. |
artikel |
11 |
Stability of PMMA on P3HT PTFTs under stress
|
Estrada, M. |
|
2009 |
53 |
10 |
p. 1063-1066 4 p. |
artikel |
12 |
Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
|
Arimoto, Keisuke |
|
2009 |
53 |
10 |
p. 1135-1143 9 p. |
artikel |
13 |
Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits
|
Frégonèse, Sébastien |
|
2009 |
53 |
10 |
p. 1103-1106 4 p. |
artikel |
14 |
Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation
|
Lee, H.K. |
|
2009 |
53 |
10 |
p. 1086-1091 6 p. |
artikel |
15 |
The split-gate flash memory with an extra select gate for automotive applications
|
Tsair, Yong-Shiuan |
|
2009 |
53 |
10 |
p. 1059-1062 4 p. |
artikel |
16 |
Thickness-dependent threshold voltage in polycrystalline pentacene-based thin-film transistors
|
Wang, Yu-Wu |
|
2009 |
53 |
10 |
p. 1107-1111 5 p. |
artikel |