| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs
|
Liu, Feilong
|
|
2009
|
53 |
1 |
p. 49-53
5 p.
|
artikel
|
| 2 |
A computational load-pull method with harmonic loading for high-efficiency investigations
|
Bengtsson, O.
|
|
2009
|
53 |
1 |
p. 86-94
9 p.
|
artikel
|
| 3 |
Analytic resolution of Poisson–Boltzmann equation in nanometric semiconductor junctions
|
Murray, Hugues
|
|
2009
|
53 |
1 |
p. 107-116
10 p.
|
artikel
|
| 4 |
Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices
|
Pappas, I.
|
|
2009
|
53 |
1 |
p. 54-56
3 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2009
|
53 |
1 |
p. IFC-
1 p.
|
artikel
|
| 6 |
Electron transport properties of bulk mercury–cadmium–telluride at 77K
|
Palermo, C.
|
|
2009
|
53 |
1 |
p. 70-78
9 p.
|
artikel
|
| 7 |
Fully-depleted Ge interband tunnel transistor: Modeling and junction formation
|
Zhang, Qin
|
|
2009
|
53 |
1 |
p. 30-35
6 p.
|
artikel
|
| 8 |
4H–SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain
|
Zhu, Huili
|
|
2009
|
53 |
1 |
p. 7-10
4 p.
|
artikel
|
| 9 |
Low voltage charge-balanced capacitance–voltage conversion circuit for one-side-electrode-type fluid-based inclination sensor
|
Manaf, Asrulnizam Bin Abd
|
|
2009
|
53 |
1 |
p. 63-69
7 p.
|
artikel
|
| 10 |
Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAs y P1− y buffers by molecular beam epitaxy
|
Hudait, Mantu K.
|
|
2009
|
53 |
1 |
p. 102-106
5 p.
|
artikel
|
| 11 |
Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs
|
Jit, S.
|
|
2009
|
53 |
1 |
p. 57-62
6 p.
|
artikel
|
| 12 |
Modeling short-channel effects in channel thermal noise and induced-gate noise in MOSFETs in the NQS regime
|
Vallur, Sunil
|
|
2009
|
53 |
1 |
p. 36-41
6 p.
|
artikel
|
| 13 |
PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations
|
Wu, W.
|
|
2009
|
53 |
1 |
p. 18-29
12 p.
|
artikel
|
| 14 |
Relative intensity noise study in the injection-locked integrated electroabsorption modulator-lasers
|
Jin, Xiaomin
|
|
2009
|
53 |
1 |
p. 95-101
7 p.
|
artikel
|
| 15 |
Steady state analysis of optical bistability in distributed coupling coefficient DFB semiconductor laser amplifiers
|
Tahvili, M. Saeed
|
|
2009
|
53 |
1 |
p. 79-85
7 p.
|
artikel
|
| 16 |
Study of leakage current and breakdown issues in 4H–SiC unterminated Schottky diodes
|
Muzykov, P.G.
|
|
2009
|
53 |
1 |
p. 14-17
4 p.
|
artikel
|
| 17 |
Surface potential equation for bulk MOSFET
|
Gildenblat, G.
|
|
2009
|
53 |
1 |
p. 11-13
3 p.
|
artikel
|
| 18 |
Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits
|
Wang, Ruonan
|
|
2009
|
53 |
1 |
p. 1-6
6 p.
|
artikel
|
| 19 |
Transient charging current measurements and modelling in silicon nanocrystal floating gate devices
|
Beaumont, A.
|
|
2009
|
53 |
1 |
p. 42-48
7 p.
|
artikel
|
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