| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A proposal for enhancement of optical nonlinearity in GaN/AlGaN centered defect quantum box (CDQB) nanocrystal
|
Rostami, A.
|
|
2008
|
52 |
7 |
p. 1075-1081
7 p.
|
artikel
|
| 2 |
Calculation of cosmic ray limited maximum DC blocking voltages of high voltage silicon PIN diodes
|
Bauer, Friedhelm D.
|
|
2008
|
52 |
7 |
p. 1052-1057
6 p.
|
artikel
|
| 3 |
Compact model for short channel symmetric doped double-gate MOSFETs
|
Cerdeira, Antonio
|
|
2008
|
52 |
7 |
p. 1064-1070
7 p.
|
artikel
|
| 4 |
Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures
|
Tsai, Jung-Hui
|
|
2008
|
52 |
7 |
p. 1018-1023
6 p.
|
artikel
|
| 5 |
Dependence of backgating on the type of deep centres in the substrate of GaAs FETs
|
Sengouga, Nouredine
|
|
2008
|
52 |
7 |
p. 1039-1042
4 p.
|
artikel
|
| 6 |
Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions
|
Deng, Yanqing
|
|
2008
|
52 |
7 |
p. 1106-1113
8 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2008
|
52 |
7 |
p. IFC-
1 p.
|
artikel
|
| 8 |
Effects of surface passivation in porous silicon as H2 gas sensor
|
Ali, N.K.
|
|
2008
|
52 |
7 |
p. 1071-1074
4 p.
|
artikel
|
| 9 |
Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics
|
Salazar, Ramón
|
|
2008
|
52 |
7 |
p. 1092-1098
7 p.
|
artikel
|
| 10 |
4H–SiC BJTs with current gain of 110
|
Zhang, Qingchun (Jon)
|
|
2008
|
52 |
7 |
p. 1008-1010
3 p.
|
artikel
|
| 11 |
Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor
|
Chuang, R.W.
|
|
2008
|
52 |
7 |
p. 1043-1046
4 p.
|
artikel
|
| 12 |
Influence of interface state charges on RF performance of LDMOS transistor
|
Kashif, A.
|
|
2008
|
52 |
7 |
p. 1099-1105
7 p.
|
artikel
|
| 13 |
Introduction of Dr. Young Kuk
|
Kuk, Young
|
|
2008
|
52 |
7 |
p. 997-
1 p.
|
artikel
|
| 14 |
Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion
|
Bengtsson, O.
|
|
2008
|
52 |
7 |
p. 1024-1031
8 p.
|
artikel
|
| 15 |
2MeV ion irradiation effects on AlGaN/GaN HFET devices
|
Sonia, G.
|
|
2008
|
52 |
7 |
p. 1011-1017
7 p.
|
artikel
|
| 16 |
Modeling of double-π equivalent circuit for on-chip symmetric spiral inductors
|
Tang, Yang
|
|
2008
|
52 |
7 |
p. 1058-1063
6 p.
|
artikel
|
| 17 |
On-chip inductor above dummy metal patterns
|
Hsu, Heng-Ming
|
|
2008
|
52 |
7 |
p. 998-1001
4 p.
|
artikel
|
| 18 |
Reduced band-gap due to phonons in SrTiO3 analyzed by ab initio calculations
|
Wunderlich, Wilfried
|
|
2008
|
52 |
7 |
p. 1082-1087
6 p.
|
artikel
|
| 19 |
Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state
|
Dobrovolsky, V.
|
|
2008
|
52 |
7 |
p. 1047-1051
5 p.
|
artikel
|
| 20 |
Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
|
Jin, Z.
|
|
2008
|
52 |
7 |
p. 1088-1091
4 p.
|
artikel
|
| 21 |
The influence of junction depth on short channel effects in vertical sidewall MOSFETs
|
Tan, Lizhe
|
|
2008
|
52 |
7 |
p. 1002-1007
6 p.
|
artikel
|
| 22 |
Thermionic field emission at electrodeposited Ni–Si Schottky barriers
|
Kiziroglou, M.E.
|
|
2008
|
52 |
7 |
p. 1032-1038
7 p.
|
artikel
|
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