| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of relative intensity noise in tapered grating QWS-DFB laser diodes by using three rate equations model
|
Shahshahani, F.
|
|
2008
|
52 |
6 |
p. 857-862
6 p.
|
artikel
|
| 2 |
A physical model of floating body effects in polysilicon thin film transistors
|
Wu, W.J.
|
|
2008
|
52 |
6 |
p. 930-936
7 p.
|
artikel
|
| 3 |
A universal electron mobility model of strained Si MOSFETs based on variational wave functions
|
Liang, Renrong
|
|
2008
|
52 |
6 |
p. 863-870
8 p.
|
artikel
|
| 4 |
Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories
|
Seo, Seung-Hwan
|
|
2008
|
52 |
6 |
p. 844-848
5 p.
|
artikel
|
| 5 |
Degradation of AlGaN-based ultraviolet light emitting diodes
|
Sawyer, S.
|
|
2008
|
52 |
6 |
p. 968-972
5 p.
|
artikel
|
| 6 |
Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process
|
Gan, Kwang-Jow
|
|
2008
|
52 |
6 |
p. 882-885
4 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2008
|
52 |
6 |
p. IFC-
1 p.
|
artikel
|
| 8 |
Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour
|
Donoval, Daniel
|
|
2008
|
52 |
6 |
p. 892-898
7 p.
|
artikel
|
| 9 |
Fabrication of field emission display prototype utilizing printed carbon nanotubes/nanofibers emitters
|
Guo, P.S.
|
|
2008
|
52 |
6 |
p. 877-881
5 p.
|
artikel
|
| 10 |
Ferromagnetism in self-assembled Ge quantum dots material followed by Mn-implantation and annealing
|
Yoon, I.T.
|
|
2008
|
52 |
6 |
p. 871-876
6 p.
|
artikel
|
| 11 |
Field electron emission of multiwalled carbon nanotubes and carbon nanofibers grown from Camphor
|
Somani, Savita P.
|
|
2008
|
52 |
6 |
p. 941-945
5 p.
|
artikel
|
| 12 |
High-performance 2mm gate width GaN HEMTs on 6H-SiC with output power of 22.4W@8GHz
|
Wang, X.L.
|
|
2008
|
52 |
6 |
p. 926-929
4 p.
|
artikel
|
| 13 |
High stability and low driving voltage green organic light emitting diode with molybdenum oxide as buffer layer
|
Jiang, Xue-Yin
|
|
2008
|
52 |
6 |
p. 952-956
5 p.
|
artikel
|
| 14 |
Improved SiGe power HBT characteristics by emitter layout
|
Huang, Shou-Chien
|
|
2008
|
52 |
6 |
p. 946-951
6 p.
|
artikel
|
| 15 |
Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
|
Gao, Haiyong
|
|
2008
|
52 |
6 |
p. 962-967
6 p.
|
artikel
|
| 16 |
k · p calculations of p-type δ-doped quantum wells in Si
|
Rodríguez-Vargas, Isaac
|
|
2008
|
52 |
6 |
p. 849-856
8 p.
|
artikel
|
| 17 |
Low-voltage constant-gm rail-to-rail CMOS operational amplifier input stage
|
Lu, Yan
|
|
2008
|
52 |
6 |
p. 957-961
5 p.
|
artikel
|
| 18 |
Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics
|
Frégonèse, Sébastien
|
|
2008
|
52 |
6 |
p. 919-925
7 p.
|
artikel
|
| 19 |
Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing range
|
Dongyue, Jin
|
|
2008
|
52 |
6 |
p. 937-940
4 p.
|
artikel
|
| 20 |
Normally-off 4H-SiC trench-gate MOSFETs with high mobility
|
Wu, J.
|
|
2008
|
52 |
6 |
p. 909-913
5 p.
|
artikel
|
| 21 |
Physical parameters extraction from current–voltage characteristic for diodes using multiple nonlinear regression analysis
|
Liu, Chien-Chih
|
|
2008
|
52 |
6 |
p. 839-843
5 p.
|
artikel
|
| 22 |
Simulation for capacitance correction from Nyquist plot of complex impedance–voltage characteristics
|
Kavasoglu, A. Sertap
|
|
2008
|
52 |
6 |
p. 990-996
7 p.
|
artikel
|
| 23 |
Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts
|
Hassaninia, Iman
|
|
2008
|
52 |
6 |
p. 980-985
6 p.
|
artikel
|
| 24 |
Small-signal performance and modeling of sub-50nm nMOSFETs with f T above 460-GHz
|
Dimitrov, V.
|
|
2008
|
52 |
6 |
p. 899-908
10 p.
|
artikel
|
| 25 |
Study of GaN growth on ultra-thin Si membranes
|
Wang, Xi
|
|
2008
|
52 |
6 |
p. 986-989
4 p.
|
artikel
|
| 26 |
Substrate current characterization and optimization of high voltage LDMOS transistors
|
Wang, Jun
|
|
2008
|
52 |
6 |
p. 886-891
6 p.
|
artikel
|
| 27 |
Thin-film inverters based on high mobility microcrystalline silicon thin-film transistors
|
Chan, Kah-Yoong
|
|
2008
|
52 |
6 |
p. 914-918
5 p.
|
artikel
|
| 28 |
Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness
|
Kordoš, P.
|
|
2008
|
52 |
6 |
p. 973-979
7 p.
|
artikel
|
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