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                             37 results found
no title author magazine year volume issue page(s) type
1 Accurate thermal analysis of GaN HFETs Conway, A.M.
 2008
 52 5 p. 637-643
7 p.
 article
2 A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs Krokidis, G.
 2008
 52 5 p. 625-631
7 p.
 article
3 A 10GHz low phase-noise CMOS voltage-controlled oscillator using dual-transformer technology Chiu, Hsien-Chin
 2008
 52 5 p. 765-770
6 p.
 article
4 A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation Bi, Xiaochuan
 2008
 52 5 p. 688-694
7 p.
 article
5 Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events Gendron, A.
 2008
 52 5 p. 663-674
12 p.
 article
6 Analytical extraction of small and large signal models for FinFET varactors Crupi, Giovanni
 2008
 52 5 p. 704-710
7 p.
 article
7 Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates Marano, I.
 2008
 52 5 p. 730-739
10 p.
 article
8 Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication Sheoran, Manav
 2008
 52 5 p. 612-617
6 p.
 article
9 Dynamics of AlGaN based detectors in the deep-UV Mazzeo, G.
 2008
 52 5 p. 795-800
6 p.
 article
10 Editorial Board 2008
 52 5 p. IFC-
1 p.
 article
11 Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg, Malin
 2008
 52 5 p. 775-781
7 p.
 article
12 Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering Navamathavan, R.
 2008
 52 5 p. 813-816
4 p.
 article
13 Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Zhou, Yi
 2008
 52 5 p. 756-764
9 p.
 article
14 Growth and optical properties of Zn:Ce:Cu:LiNbO3 single crystals Ma, Decai
 2008
 52 5 p. 644-648
5 p.
 article
15 High gate voltage drain current leveling off and its low-frequency noise in 65nm fully-depleted strained and non-strained SOI nMOSFETs Lukyanchikova, N.
 2008
 52 5 p. 801-807
7 p.
 article
16 High-performance white organic light-emitting device using non-doped-type structure Yang, Huishan
 2008
 52 5 p. 657-662
6 p.
 article
17 High power density, high efficiency 1W SiGe power HBT for 2.4GHz power amplifier applications Yeh, Ping-Chun
 2008
 52 5 p. 745-748
4 p.
 article
18 Hopping photoconductivity and the effectiveness of phonon detection in GaAs:Zn bolometers Taele, B.M.
 2008
 52 5 p. 782-786
5 p.
 article
19 Hot-carrier effects as a function of silicon film thickness in nanometer-scale SOI pMOSFETs Jang, Sung Jun
 2008
 52 5 p. 824-829
6 p.
 article
20 Influence of oxynitride (SiO x N y ) passivation on the microwave performance of AlGaN/GaN HEMTs Desmaris, V.
 2008
 52 5 p. 632-636
5 p.
 article
21 Low-frequency noise properties of double channel AlGaN/GaN HEMTs Jha, S.K.
 2008
 52 5 p. 606-611
6 p.
 article
22 Microwave performance of field-plate 0.13-μm MOS transistors with varying field-plate extension Chiu, Hsien-Chin
 2008
 52 5 p. 725-729
5 p.
 article
23 Mobility model for compact device modeling of OTFTs made with different materials Estrada, M.
 2008
 52 5 p. 787-794
8 p.
 article
24 Modeling non-quasi-static effects in channel thermal noise and induced-gate noise in MOS field-effect transistors Deshpande, Abhay
 2008
 52 5 p. 771-774
4 p.
 article
25 Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs Cerdeira, A.
 2008
 52 5 p. 830-837
8 p.
 article
26 Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics Morshed, Tanvir Hasan
 2008
 52 5 p. 711-724
14 p.
 article
27 Pressure induced, electronic and optical properties of zincblende InP Parashari, Satyam S.
 2008
 52 5 p. 749-755
7 p.
 article
28 Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD Azam, Sher
 2008
 52 5 p. 740-744
5 p.
 article
29 Realizing high voltage SJ-LDMOS with non-uniform N-buried layer Chen, Wanjun
 2008
 52 5 p. 675-678
4 p.
 article
30 Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique Lu, Hai
 2008
 52 5 p. 817-823
7 p.
 article
31 Solar-blind MSM-photodetectors based on Al x Ga1−x N/GaN heterostructures grown by MOCVD Averine, S.V.
 2008
 52 5 p. 618-624
7 p.
 article
32 Subthreshold characteristics of polysilicon TFTs Deng, Wanling
 2008
 52 5 p. 695-703
9 p.
 article
33 The effect of a smart body tie on the bottom-gate thin film transistor Lin, Jyi-Tsong
 2008
 52 5 p. 808-812
5 p.
 article
34 The effects of radiation-induced interface traps on base current in gated bipolar test structures Chen, X.J.
 2008
 52 5 p. 683-687
5 p.
 article
35 Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET Harik, L.
 2008
 52 5 p. 597-605
9 p.
 article
36 Ultraviolet Schottky detector based on epitaxial ZnO thin film Jiang, Dayong
 2008
 52 5 p. 679-682
4 p.
 article
37 Variation and mismatch effects of the low-temperature poly-Si TFTs on the circuit for the X-ray active matrix sensor Tai, Ya-Hsiang
 2008
 52 5 p. 649-656
8 p.
 article
                             37 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands