| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET
|
Kaur, Harsupreet
|
|
2008
|
52 |
2 |
p. 305-311
7 p.
|
artikel
|
| 2 |
An area efficient body contact for low and high voltage SOI MOSFET devices
|
Daghighi, Arash
|
|
2008
|
52 |
2 |
p. 196-204
9 p.
|
artikel
|
| 3 |
An efficient channel segmentation approach for a large-signal NQS MOSFET model
|
Bucher, Matthias
|
|
2008
|
52 |
2 |
p. 275-281
7 p.
|
artikel
|
| 4 |
A new analytical compact model for two-dimensional finger photodiodes
|
Naeve, T.
|
|
2008
|
52 |
2 |
p. 299-304
6 p.
|
artikel
|
| 5 |
An explicit surface-potential-based model for undoped double-gate MOSFETs
|
Gong, Jing-Feng
|
|
2008
|
52 |
2 |
p. 282-288
7 p.
|
artikel
|
| 6 |
An ultra-low power CMOS random number generator
|
Zhou, Sheng-hua
|
|
2008
|
52 |
2 |
p. 233-238
6 p.
|
artikel
|
| 7 |
Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process
|
Ali, A.
|
|
2008
|
52 |
2 |
p. 205-210
6 p.
|
artikel
|
| 8 |
Current instability and single-mode THz generation in ungated two-dimensional electron gas
|
Cheremisin, M.V.
|
|
2008
|
52 |
2 |
p. 338-340
3 p.
|
artikel
|
| 9 |
Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55μm
|
Abedi, K.
|
|
2008
|
52 |
2 |
p. 312-322
11 p.
|
artikel
|
| 10 |
Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation
|
Huang, Jian-Jiun
|
|
2008
|
52 |
2 |
p. 289-293
5 p.
|
artikel
|
| 11 |
Dynamic response of QWS-DFB lasers with convex tapered grating structure and non-zero facet reflection
|
Bazhdanzadeh, N.
|
|
2008
|
52 |
2 |
p. 221-226
6 p.
|
artikel
|
| 12 |
Editorial Board
|
|
|
2008
|
52 |
2 |
p. IFC-
1 p.
|
artikel
|
| 13 |
Extraction of series resistance using physical mobility and current models for MOSFETs
|
Katto, Hisao
|
|
2008
|
52 |
2 |
p. 190-195
6 p.
|
artikel
|
| 14 |
Field effect transistor as ultrafast detector of modulated terahertz radiation
|
Kachorovskii, V.Yu.
|
|
2008
|
52 |
2 |
p. 182-185
4 p.
|
artikel
|
| 15 |
High-efficiency red phosphorescent organic light-emitting diodes based on metal-microcavity structure
|
Sun, X.Y.
|
|
2008
|
52 |
2 |
p. 211-214
4 p.
|
artikel
|
| 16 |
High field emission enhancement of ZnO-nanorods via hydrothermal synthesis
|
Chen, Jing
|
|
2008
|
52 |
2 |
p. 294-298
5 p.
|
artikel
|
| 17 |
High performance SiGe HBT power unit-cell for S-Band open collector adaptive bias power amplifier design
|
Chiou, Hwann-Kaeo
|
|
2008
|
52 |
2 |
p. 239-244
6 p.
|
artikel
|
| 18 |
Influence of the polymer dielectric characteristics on the performance of pentacene organic field-effect transistors
|
Narayanan Unni, K.N.
|
|
2008
|
52 |
2 |
p. 179-181
3 p.
|
artikel
|
| 19 |
Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations
|
Gong, Jing-Feng
|
|
2008
|
52 |
2 |
p. 259-263
5 p.
|
artikel
|
| 20 |
Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
|
Parish, G.
|
|
2008
|
52 |
2 |
p. 171-174
4 p.
|
artikel
|
| 21 |
Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress
|
Samanta, Piyas
|
|
2008
|
52 |
2 |
p. 255-258
4 p.
|
artikel
|
| 22 |
Method of controlling spontaneous emission from porous silicon fabricated using pulsed current etching
|
Ali, N.K.
|
|
2008
|
52 |
2 |
p. 249-254
6 p.
|
artikel
|
| 23 |
Modeling the effects of the channel electron velocity on the channel surface potential of ballistic MOSFETs
|
Mao, Ling-Feng
|
|
2008
|
52 |
2 |
p. 186-189
4 p.
|
artikel
|
| 24 |
Multiple-input NOR logic design using negative differential resistance circuits implemented by standard SiGe process
|
Gan, Kwang-Jow
|
|
2008
|
52 |
2 |
p. 175-178
4 p.
|
artikel
|
| 25 |
650nm Resonant-cavity light-emitting diodes with dielectric distributed Bragg reflectors
|
Lei, Po-Hsun
|
|
2008
|
52 |
2 |
p. 227-232
6 p.
|
artikel
|
| 26 |
On the physical origins of mismatch in Si/SiGe:C heterojunction bipolar transistors for BiCMOS technologies
|
Danaie, Stéphane
|
|
2008
|
52 |
2 |
p. 323-337
15 p.
|
artikel
|
| 27 |
On the recovery of interface state in pMOSFETs subjected to NBTI and SHI stress
|
Wang, Yangang
|
|
2008
|
52 |
2 |
p. 264-268
5 p.
|
artikel
|
| 28 |
Optical and electrochemical properties of nanosized CuO via thermal decomposition of copper oxalate
|
Zhang, Xiaojun
|
|
2008
|
52 |
2 |
p. 245-248
4 p.
|
artikel
|
| 29 |
Quasi-static capacitance–voltage characterizations of carrier accumulation and depletion phenomena in pentacene thin film transistors
|
Chen, Yi-Ming
|
|
2008
|
52 |
2 |
p. 269-274
6 p.
|
artikel
|
| 30 |
Temperature effect of metal–oxide–semiconductor field-effect-transistors’ gate current evaluated with the mask dimensions
|
Yeh, Chun-Chia
|
|
2008
|
52 |
2 |
p. 215-220
6 p.
|
artikel
|
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