| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high Schottky barrier between Ni and S-passivated n-type Si(100) surface
|
Song, G.
|
|
2008
|
52 |
11 |
p. 1778-1781
4 p.
|
artikel
|
| 2 |
An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters
|
Oudir, A.
|
|
2008
|
52 |
11 |
p. 1742-1750
9 p.
|
artikel
|
| 3 |
A new approach for physical-based modelling of bipolar power semiconductor devices
|
Chibante, R.
|
|
2008
|
52 |
11 |
p. 1766-1772
7 p.
|
artikel
|
| 4 |
A parasitic resistance measurement method exploiting gate current–density characteristics in ultra-short Schottky-gate FETs
|
Inoue, Takashi
|
|
2008
|
52 |
11 |
p. 1735-1741
7 p.
|
artikel
|
| 5 |
A poly-Si AMOLED display with high uniformity
|
Park, KeeChan
|
|
2008
|
52 |
11 |
p. 1691-1693
3 p.
|
artikel
|
| 6 |
A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes
|
Zhang, Yanli
|
|
2008
|
52 |
11 |
p. 1810-1814
5 p.
|
artikel
|
| 7 |
A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET
|
Zhang, Gang
|
|
2008
|
52 |
11 |
p. 1773-1777
5 p.
|
artikel
|
| 8 |
Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition
|
Shen, Yiqun
|
|
2008
|
52 |
11 |
p. 1833-1836
4 p.
|
artikel
|
| 9 |
Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with f max of 305GHz
|
Jin, Z.
|
|
2008
|
52 |
11 |
p. 1825-1828
4 p.
|
artikel
|
| 10 |
Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations
|
Weidemann, Michaela
|
|
2008
|
52 |
11 |
p. 1722-1729
8 p.
|
artikel
|
| 11 |
Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs
|
Lee, Chi-Woo
|
|
2008
|
52 |
11 |
p. 1815-1820
6 p.
|
artikel
|
| 12 |
Corrigendum to “An analytical channel thermal noise model for deep sub-micron MOSFETs with short channel effects” [Solid State Electronics 51(7) (2007) 1034–1038]
|
Jeon, Jongwook
|
|
2008
|
52 |
11 |
p. 1837-
1 p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
2008
|
52 |
11 |
p. IFC-
1 p.
|
artikel
|
| 14 |
Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer
|
Zhang, Fujun
|
|
2008
|
52 |
11 |
p. 1806-1809
4 p.
|
artikel
|
| 15 |
Erratum to “Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory” [Solid State Electronics 52(9) (2008) 1452–1459]
|
Jacob, S.
|
|
2008
|
52 |
11 |
p. 1838-
1 p.
|
artikel
|
| 16 |
Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology
|
O’uchi, Shin-ichi
|
|
2008
|
52 |
11 |
p. 1694-1702
9 p.
|
artikel
|
| 17 |
Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation
|
Furno, Enrico
|
|
2008
|
52 |
11 |
p. 1796-1801
6 p.
|
artikel
|
| 18 |
InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material
|
Champlain, James G.
|
|
2008
|
52 |
11 |
p. 1829-1832
4 p.
|
artikel
|
| 19 |
Long-wave (10μm) infrared light emitting diode device performance
|
Das, Naresh C.
|
|
2008
|
52 |
11 |
p. 1821-1824
4 p.
|
artikel
|
| 20 |
Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study
|
Vitanov, S.
|
|
2008
|
52 |
11 |
p. 1791-1795
5 p.
|
artikel
|
| 21 |
Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate
|
Zhang, Yong
|
|
2008
|
52 |
11 |
p. 1782-1790
9 p.
|
artikel
|
| 22 |
Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(100) Si substrates
|
Krishnamoorthy, Soumya
|
|
2008
|
52 |
11 |
p. 1710-1716
7 p.
|
artikel
|
| 23 |
RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements
|
Contopanagos, H.
|
|
2008
|
52 |
11 |
p. 1730-1734
5 p.
|
artikel
|
| 24 |
Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse
|
Levinshtein, Michael E.
|
|
2008
|
52 |
11 |
p. 1802-1805
4 p.
|
artikel
|
| 25 |
Structural and optical properties of ZrB2 and Hf x Zr1− x B2 films grown by vicinal surface epitaxy on Si(111) substrates
|
Roucka, R.
|
|
2008
|
52 |
11 |
p. 1687-1690
4 p.
|
artikel
|
| 26 |
Study the effect of distribution of density of states on the depletion width of organic Schottky contacts
|
Takshi, Arash
|
|
2008
|
52 |
11 |
p. 1717-1721
5 p.
|
artikel
|
| 27 |
Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
|
Agopian, Paula Ghedini Der
|
|
2008
|
52 |
11 |
p. 1751-1754
4 p.
|
artikel
|
| 28 |
Transport boundary condition for semiconductor structures
|
Volovichev, I.N.
|
|
2008
|
52 |
11 |
p. 1703-1709
7 p.
|
artikel
|
| 29 |
Unified tunnelling-diffusion theory for Schottky and very thin MOS structures
|
Racko, J.
|
|
2008
|
52 |
11 |
p. 1755-1765
11 p.
|
artikel
|
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